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Vishay Siliconix SQJA26EP-T1_GE3
- Part No.:
- SQJA26EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJA26EP-T1_GE3.pdf
- Description:
- AUTOMOTIVE N-CHANNEL 30 V (D-S)
- Quantity:
- Payment:
- Shipping:
Inventory:2,990
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Product details
Overview
SQJA26EP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel 30 V MOSFET in PowerPAK® SO-8L package, delivering 410 A continuous drain current at TC = 25 °C, RDS(on) of 0.77 mΩ at VGS = 10 V and 1.28 mΩ at VGS = 4.5 V, with AEC-Q101 qualification and 175 °C maximum junction temperature - deployed in high-current DC-DC converters and 48 V battery disconnect circuits.
For engineers reviewing the SQJA26EP-T1_GE3 datasheet, SQJA26EP-T1_GE3 pinout, SQJA26EP-T1_GE3 application, or SQJA26EP-T1_GE3 equivalent, this page delivers verified thermal resistance (RthJC = 0.3 °C/W), gate charge profile (Qg = 129–195 nC), body diode recovery metrics (trr = 58–116 ns, Qrr = 71–142 nC), and TrenchFET® Gen IV switching optimization for high-efficiency power stages.
Technical Context
This MOSFET uses TrenchFET® Gen IV process to achieve ultra-low RDS(on) while maintaining robust UIS and avalanche capability (EAS = 154 mJ, IAS = 55.5 A). Its Qgd/Qgs ratio < 1 minimizes Miller-induced switching oscillation and improves hard-switching stability in synchronous buck and OR-ing applications.
The device features fully rated 100 % Rg and UIS testing, operates across -55 °C to +175 °C junction range, and is qualified per AEC-Q101 for automotive under-hood use. Thermal design is enabled by low RthJC (0.3 °C/W) and validated FR4 PCB mounting data (RthJA = 42 °C/W on 1"² board).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage compatible with 24 V/48 V automotive bus systems without derating. |
| RDS(on) @ VGS = 10 V | 0.77 mΩ - Enables <1 W conduction loss at 400 A, critical for high-current battery switches. |
| RDS(on) @ VGS = 4.5 V | 1.28 mΩ - Ensures reliable turn-on with 5 V gate drivers in 12 V control rail architectures. |
| ID (continuous) | 410 A at TC = 25 °C - Supports peak load currents in starter-alternator and traction inverter precharge circuits. |
| Qg / Qgd | 129–195 nC total gate charge, with Qgd = 25 nC - Low Qgd/Qgs ratio reduces Miller plateau duration and EMI in fast-switching topologies. |
| RthJC | 0.3 °C/W - Allows direct heatsink mounting for >500 W power dissipation with minimal thermal interface resistance. |
| trr / Qrr | 58–116 ns reverse recovery time, 71–142 nC recovered charge - Minimizes body diode losses during synchronous rectification transitions. |
Pinout & Package
Package: PowerPAK® SO-8L (PPKSO8LWLA), surface-mount, thermally enhanced with exposed drain pad on bottom side. Dimensions: 6.15 mm × 4.90 mm × 1.05 mm (E × D1 × A).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 7, 8 | Source (S) | Common source terminals - paralleled for low-inductance, high-current return path; connected to PCB ground plane. |
| 5, 6 | Drain (D) | Power drain terminals - tied to exposed copper pad; primary heat transfer path to heatsink or inner copper layers. |
| Gate (G) | Control input | Pin 4 only - isolated gate terminal requiring <2.6 Ω gate resistance to suppress ringing; referenced to source. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive under-hood operation up to 175 °C TJ, including temperature cycling, HTRB, and UHAST. |
| TrenchFET® Gen IV architecture | Delivers 23 % lower RDS(on) vs. prior generation at same die size, enabling higher power density in compact modules. |
| 100 % Rg and UIS tested | Guarantees gate robustness against transient overvoltage and unclamped inductive switching stress in motor drives. |
| Qgd/Qgs ratio < 1 | Reduces Miller-induced shoot-through risk and enables stable 100+ kHz switching in synchronous rectifiers. |
| Exposed drain thermal pad | Enables <0.3 °C/W junction-to-case resistance when soldered to 2 oz. copper thermal pad - critical for thermal management. |
Applications
| Automotive 48 V Battery Disconnect | High-Current DC-DC Converter Primary Switch |
|---|---|
Use Scenario: High-side switch isolating 48 V battery from downstream loads during fault conditions or key-off state. IC Role / Device Role / Timing Role: Main power FET handling bidirectional 400+ A fault current with fast turn-off (<100 ns fall time) and avalanche energy absorption. Use Value: 154 mJ single-pulse avalanche energy and 175 °C rating ensure survival during short-circuit events without thermal runaway. |
Use Scenario: Primary-side high-current switch in 3–5 kW 48 V–12 V bidirectional DC-DC converter for vehicle electrification. IC Role / Device Role / Timing Role: Synchronously switched N-channel MOSFET operating at 100–200 kHz with low conduction and switching losses. Use Value: 0.77 mΩ RDS(on) at 10 V and 25 nC Qgd minimize both I²R and gate drive losses, achieving >97 % efficiency at full load. |
| Starter-Generator Precharge Circuit | OR-ing Diode Replacement in Power Distribution |
Use Scenario: Controlled inrush limiting during engine start-up using soft-start gate drive to prevent bus collapse. IC Role / Device Role / Timing Role: Current-controlled precharge switch with precise VGS ramping and body diode forward conduction during transition. Use Value: 1.28 mΩ RDS(on) at 4.5 V ensures low-loss turn-on with standard 5 V microcontroller GPIOs, eliminating need for level shifters. |
Use Scenario: Active OR-ing element replacing Schottky diodes in redundant 48 V power supply paths for ADAS ECUs. IC Role / Device Role / Timing Role: Low-VF, low-loss back-to-back switch controlling current direction and blocking reverse current. Use Value: Body diode VSD = 1.1 V at 15 A and trr = 58 ns enable fast reverse recovery, reducing cross-conduction losses versus discrete diodes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL1404ZPBF | RDS(on) = 3.4 mΩ @ 10 V; TO-220 package; no AEC-Q101 qualification; RthJC = 1.25 °C/W. | Limited to under-hood ambient ≤ 125 °C; unsuitable for 175 °C junction operation or automated SMT assembly. | Select only for non-automotive industrial prototypes where cost outweighs thermal performance and qualification. |
| STL220N3LLH6 | RDS(on) = 0.75 mΩ @ 10 V; PowerFLAT 5x6 package; AEC-Q101 qualified; RthJC = 0.45 °C/W; Qg = 150 nC. | Higher gate charge increases driver loss; smaller thermal pad limits heatsinking; not rated for 410 A continuous. | Preferable for space-constrained layouts where footprint is priority over peak current capability and thermal headroom. |
Compared with IRL1404ZPBF and STL220N3LLH6, SQJA26EP-T1_GE3 uniquely combines 410 A current rating, 0.3 °C/W RthJC, and full AEC-Q101 compliance - making it the only option for production 48 V battery disconnect modules requiring sustained 300+ A operation at 175 °C.
Availability
SQJA26EP-T1_GE3 is available at Aetrix Electronics and suitable for automotive battery management, high-power DC-DC conversion, and 48 V system protection requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for SQJA26EP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix designs and manufactures high-performance discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing applications.
SQJA26EP-T1_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET product line, engineered specifically for high-current, high-temperature 48 V mild-hybrid and electric vehicle subsystems demanding AEC-Q101 reliability and ultra-low RDS(on).
FAQ
What is the maximum continuous drain current rating for SQJA26EP-T1_GE3 at 125 °C case temperature?
The SQJA26EP-T1_GE3 supports 331 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK® SO-8L package and must be applied in thermal simulations accounting for actual PCB copper area and heatsinking. The SQJA26EP-T1_GE3 maintains full functionality within its -55 °C to +175 °C junction temperature range under this condition.
Is SQJA26EP-T1_GE3 pin-compatible with other PowerPAK SO-8L MOSFETs like SQJQ460E?
No, SQJA26EP-T1_GE3 is not pin-compatible with SQJQ460E or generic PowerPAK SO-8L devices due to differing internal die configuration and terminal assignment. While both use the same outline, SQJA26EP-T1_GE3 assigns pins 1–4 and 7–8 to Source, pins 5–6 to Drain, and pin 4 exclusively to Gate - a layout optimized for ultra-low-inductance source return. Always verify pinout from the official Vishay SQJA26EP datasheet before PCB layout.
Does SQJA26EP-T1_GE3 require a negative gate voltage for safe turn-off in high-dV/dt environments?
No, SQJA26EP-T1_GE3 does not require negative gate drive. Its ±20 V VGS rating and low Qgd/Qgs ratio provide inherent immunity to Miller-induced turn-on. A 0 V to 10 V gate swing is sufficient for full enhancement and safe commutation in typical 48 V automotive applications. However, a small negative offset (e.g., -2 V) may be used in extreme noise environments to increase noise margin - but it is not mandatory for SQJA26EP-T1_GE3 operation.
What is the body diode forward voltage specification for SQJA26EP-T1_GE3 at 15 A and 25 °C?
The body diode forward voltage (VSD) of SQJA26EP-T1_GE3 is specified as ≤1.1 V at IF = 15 A and VGS = 0 V, measured at TA = 25 °C. This low VSD, combined with fast trr (58–116 ns) and low Qrr (71–142 nC), makes the SQJA26EP-T1_GE3 suitable for active OR-ing and synchronous rectification where diode conduction occurs during dead-time intervals.
Can SQJA26EP-T1_GE3 be used in parallel configurations without current-sharing resistors?
Yes, SQJA26EP-T1_GE3 supports paralleling without external gate or source resistors due to its positive temperature coefficient of RDS(on) and matched threshold voltage distribution across production lots. Parallel operation requires symmetrical PCB layout, identical gate drive routing, and shared thermal mass. For 2× or 4× configurations, Vishay recommends verifying thermal coupling and current imbalance via thermal imaging and current probe measurements - especially under pulsed load conditions relevant to SQJA26EP-T1_GE3 applications.
SQJA26EP-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 410A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 0.77mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 195 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 9778 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 500W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJA26EP-T1_GE3 FAQ
1.How can I place an order for SQJA26EP-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJA26EP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJA26EP-T1_GE3 reliable?
The price and inventory of SQJA26EP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJA26EP-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJA26EP-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJA26EP-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJA26EP-T1_GE3?
SQJA26EP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJA26EP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJA26EP-T1_GE3?
For technical support, including SQJA26EP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJA26EP-T1_GE3 requirements.
6.How does Aetrix verify that SQJA26EP-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJA26EP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJA26EP-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJA26EP-T1_GE3?
All SQJA26EP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJA26EP-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJA26EP-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJA26EP-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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