Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQJA34EP-T1_GE3

Name: SQJA34EP-T1_GE3
Brand: Vishay Siliconix
SKU: SQJA34EP-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SQJA34EP-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SQJA34EP-T1_GE3.pdf

Description:: MOSFET N-CH 40V 75A PPAK SO-8

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:8,272

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SQJA34EP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 40 V (D–S), 75 A continuous drain current at 25 °C, and 175 °C maximum junction temperature - designed for high-efficiency DC–DC converters, motor control stages, and battery protection circuits in under-hood automotive systems.

For engineers reviewing the SQJA34EP-T1_GE3 datasheet, SQJA34EP-T1_GE3 pinout, SQJA34EP-T1_GE3 application, or SQJA34EP-T1_GE3 equivalent, this page delivers verified electrical parameters, thermal performance data, PowerPAK SO-8L package layout, AEC-Q101 qualification status, and real-world substitution guidance for high-reliability 12 V/24 V automotive power designs.

Technical Context

This MOSFET uses trench-gate silicon technology to achieve low R_DS(on) of 4.3 mΩ at V_GS = 10 V and 10 A, with guaranteed 100 % R_g and UIS testing per AEC-Q101. Its body diode exhibits 790 mV forward voltage at 10 A and 69 ns reverse recovery time, enabling efficient synchronous rectification and freewheeling operation.

The device features a leadless PowerPAK SO-8L package with exposed copper drain pad on the bottom side, delivering R_thJC = 2.2 °C/W and R_thJA = 68 °C/W (on 1"² FR4 PCB), supporting high-power density layouts without thermal vias in constrained spaces.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum drain-source blocking voltage suitable for 12 V/24 V automotive bus applications with transient margin.
R_DS(on) @ V_GS = 10 V, I_D = 10 A	4.3 mΩ - Enables <1 W conduction loss at 75 A, critical for high-current switching nodes in EPS and ADAS power stages.
I_D (continuous) @ T_C = 25 °C	75 A - Supports high-current load switching in starter relays, HVAC blowers, and battery disconnect units.
T_J max	+175 °C - Qualified for under-hood environments including engine control modules and transmission control units.
Q_g total	31 nC (typ.) - Low gate charge enables fast turn-on with minimal driver power, reducing switching losses in 100–500 kHz DC–DC converters.
AEC-Q101 qualified	Yes - Validated for automotive electronics per stress test requirements including HTGB, HTRB, and UIS, ensuring long-term reliability.
Package	PowerPAK SO-8L - Leadless surface-mount package with exposed drain pad for direct thermal coupling to PCB ground plane.

Pinout & Package

PowerPAK SO-8L is a 5 mm × 6.15 mm leadless package with exposed copper drain pad on the bottom side. The top-side terminals are arranged in single-row configuration: Pin 1 = Source, Pin 2 = Source, Pin 3 = Source, Pin 4 = Gate, Pin 5 = Drain (exposed pad), Pin 6 = Drain, Pin 7 = Drain, Pin 8 = Drain. Thermal performance relies on soldering the exposed drain pad to a large copper area.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common source connection for internal parallel die; low-inductance return path for high di/dt switching.
4	Gate	Single gate input terminal; requires ≤1 Ω series resistance to suppress oscillation during fast switching.
5–8 (exposed pad + top-side)	Drain	Unified drain node connected to bottom-side copper pad; primary thermal path to PCB and main current output path.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 4.3 mΩ R_DS(on) in PowerPAK SO-8L, enabling higher current density than planar MOSFETs in same footprint.
100 % R_g and UIS tested	Ensures gate robustness against ESD and avalanche energy handling up to 76 mJ, critical for load dump and inductive kickback immunity.
Body diode t_rr = 69 ns (typ.)	Reduces reverse recovery losses in synchronous buck converters and half-bridge motor drivers operating above 100 kHz.
Exposed drain pad	Provides direct thermal interface to PCB copper, achieving 2.2 °C/W junction-to-case resistance without thermal vias or heatsinks.
AEC-Q101 qualification	Validates suitability for automotive safety-critical subsystems including powertrain, chassis, and body electronics.

Applications

Electric Power Steering (EPS)	Automotive DC–DC Converters
Use Scenario: High-current H-bridge motor driver controlling steering assist torque in 12 V EPS systems. IC Role / Device Role / Timing Role: Low-side switch in dual half-bridge configuration, switching at 20–50 kHz with peak currents up to 75 A. Use Value: 4.3 mΩ R_DS(on) minimizes I²R heating during sustained assist, while 175 °C rating ensures operation near engine bay heat sources.	Use Scenario: Primary synchronous rectifier in 12 V → 5 V/3.3 V isolated DC–DC converter for ADAS camera modules. IC Role / Device Role / Timing Role: Secondary-side power MOSFET replacing Schottky diode, driven by transformer-coupled gate signal at 300–500 kHz. Use Value: 69 ns body diode t_rr and low Q_gd reduce switching losses and EMI, improving efficiency by >3 % vs. diode rectification.
Battery Disconnect Units (BDU)	Engine Control Unit (ECU) Power Switching
Use Scenario: Main contactor replacement in 12 V lithium-ion battery management systems for start-stop and hybrid vehicles. IC Role / Device Role / Timing Role: Single-pole, high-current solid-state switch controlling battery isolation during fault conditions or sleep mode. Use Value: 140 A pulsed drain current and 39 A single-pulse avalanche capability withstand short-circuit events without failure.	Use Scenario: Load switch for fuel injector drivers, ignition coils, or solenoid valves in gasoline/diesel ECUs. IC Role / Device Role / Timing Role: High-side or low-side power switch controlled by microcontroller GPIO with external gate driver. Use Value: AEC-Q101 qualification and -55 °C to +175 °C operation ensure reliable actuation across full vehicle temperature range.

Electric Power Steering (EPS)

Automotive DC–DC Converters

Use Scenario: High-current H-bridge motor driver controlling steering assist torque in 12 V EPS systems.

IC Role / Device Role / Timing Role: Low-side switch in dual half-bridge configuration, switching at 20–50 kHz with peak currents up to 75 A.

Use Value: 4.3 mΩ R_DS(on) minimizes I²R heating during sustained assist, while 175 °C rating ensures operation near engine bay heat sources.

Use Scenario: Primary synchronous rectifier in 12 V → 5 V/3.3 V isolated DC–DC converter for ADAS camera modules.

IC Role / Device Role / Timing Role: Secondary-side power MOSFET replacing Schottky diode, driven by transformer-coupled gate signal at 300–500 kHz.

Use Value: 69 ns body diode t_rr and low Q_gd reduce switching losses and EMI, improving efficiency by >3 % vs. diode rectification.

Battery Disconnect Units (BDU)

Engine Control Unit (ECU) Power Switching

Use Scenario: Main contactor replacement in 12 V lithium-ion battery management systems for start-stop and hybrid vehicles.

IC Role / Device Role / Timing Role: Single-pole, high-current solid-state switch controlling battery isolation during fault conditions or sleep mode.

Use Value: 140 A pulsed drain current and 39 A single-pulse avalanche capability withstand short-circuit events without failure.

Use Scenario: Load switch for fuel injector drivers, ignition coils, or solenoid valves in gasoline/diesel ECUs.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlled by microcontroller GPIO with external gate driver.

Use Value: AEC-Q101 qualification and -55 °C to +175 °C operation ensure reliable actuation across full vehicle temperature range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 4.5 mΩ @ 10 V, 10 A; TO-252 package; no AEC-Q101 qualification.	Lacks automotive qualification; suited for industrial or consumer DC–DC where ambient temperature ≤125 °C.	Select IRF7470PBF only if AEC-Q101 is not required and thermal design accommodates higher R_thJA (70 °C/W).
STL220N4F7AG	R_DS(on) = 3.7 mΩ @ 10 V, 10 A; PowerFLAT 5×6 package; AEC-Q101 qualified; 40 V rating.	Lower R_DS(on) but higher Q_g (45 nC); different pinout and thermal pad geometry limits drop-in replacement.	STL220N4F7AG offers better conduction loss but requires PCB redesign due to non-compatible PowerPAK SO-8L footprint.

Compared with IRF7470PBF and STL220N4F7AG, SQJA34EP-T1_GE3 uniquely balances AEC-Q101 compliance, 4.3 mΩ R_DS(on), 31 nC gate charge, and PowerPAK SO-8L compatibility - making it optimal for space-constrained, thermally demanding automotive power stages requiring validated reliability.

Availability

SQJA34EP-T1_GE3 is available at Aetrix Electronics and suitable for electric power steering (EPS), battery disconnect units (BDU), and automotive DC–DC converters requiring stable component supply, long-lifecycle support, and traceable sourcing for Tier 1 OEM programs.

Supply support for SQJA34EP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQJA34EP-T1_GE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-current, high-temperature switching in engine compartment and chassis control applications.

FAQ

What is the maximum continuous drain current for SQJA34EP-T1_GE3 at 125 °C case temperature?

The SQJA34EP-T1_GE3 supports 54 A continuous drain current at T_C = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK SO-8L package and must be validated against actual board-level thermal performance using R_thJA = 68 °C/W and ambient conditions.

Is SQJA34EP-T1_GE3 pin-compatible with standard SO-8 packages?

No - SQJA34EP-T1_GE3 uses the leadless PowerPAK SO-8L package with an exposed drain pad on the bottom side and non-standard terminal layout (three source pins, one gate, four drain connections). It is not mechanically or electrically compatible with through-hole or gull-wing SO-8 footprints.

Does SQJA34EP-T1_GE3 include integrated ESD protection on the gate?

The SQJA34EP-T1_GE3 datasheet does not specify integrated gate ESD protection. Designers must implement external gate resistors (≤10 Ω) and TVS clamping per AEC-Q101 recommendations, especially in high-noise automotive environments where gate oxide integrity is critical.

What is the typical body diode forward voltage of SQJA34EP-T1_GE3 at 10 A?

The typical body diode forward voltage (V_SD) of SQJA34EP-T1_GE3 is 0.79 V at I_F = 10 A and V_GS = 0 V, measured at T_J = 25 °C. This value increases to ~1.05 V at 175 °C junction temperature, as confirmed by the V_SD vs. temperature characteristic curve.

Can SQJA34EP-T1_GE3 be used in synchronous rectification applications?

Yes - SQJA34EP-T1_GE3 is suitable for synchronous rectification due to its low R_DS(on) (4.3 mΩ), fast body diode (t_rr = 69 ns typ.), and low Q_gd (6 nC typ.), which minimize switching losses and improve efficiency in isolated DC–DC converters operating up to 500 kHz.

SQJA34EP-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.3mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2800 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 68W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SQJA34EP-T1_GE3 FAQ

1.How can I place an order for SQJA34EP-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQJA34EP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQJA34EP-T1_GE3 reliable?

The price and inventory of SQJA34EP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJA34EP-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQJA34EP-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJA34EP-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQJA34EP-T1_GE3?

SQJA34EP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQJA34EP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQJA34EP-T1_GE3?

For technical support, including SQJA34EP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJA34EP-T1_GE3 requirements.

6.How does Aetrix verify that SQJA34EP-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQJA34EP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJA34EP-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQJA34EP-T1_GE3?

All SQJA34EP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJA34EP-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQJA34EP-T1_GE3 part is unused and in its original packaging.

Return procedure for SQJA34EP-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …