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Vishay Siliconix SQJA36EP-T1_GE3
- Part No.:
- SQJA36EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJA36EP-T1_GE3.pdf
- Description:
- MOSFET N-CH 40V 350A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:6,988
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Product details
Overview
SQJA36EP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® Gen IV MOSFET rated for 40 V (D–S), 350 A continuous drain current at TC = 25 °C, and 175 °C maximum junction temperature, with RDS(on) = 1.24 mΩ at VGS = 10 V - optimized for high-efficiency 12 V/48 V automotive power distribution, battery disconnect, and motor control circuits.
For engineers reviewing the SQJA36EP-T1_GE3 datasheet, SQJA36EP-T1_GE3 pinout, SQJA36EP-T1_GE3 application, or SQJA36EP-T1_GE3 equivalent, this page delivers verified package mapping, thermal resistance (RthJC = 0.3 °C/W), gate charge (Qg = 86–107 nC), body diode recovery (trr = 52–68 ns), and AEC-Q101 qualification status to support robust automotive system design.
Technical Context
This MOSFET employs a trench-based silicon structure enabling low on-resistance and fast switching with Qgd/Qgs ratio < 1, reducing Miller-induced turn-off delay and improving hard-switching efficiency in DC–DC converters and H-bridge drivers. Its 100 % Rg and UIS testing ensures gate robustness and avalanche reliability under transient overloads.
The PowerPAK SO-8L package integrates three source terminals (Pins 1, 2, 3), one gate (Pin 4), and a thermally enhanced drain paddle (exposed on bottom), delivering 0.3 °C/W junction-to-case thermal resistance and supporting high-current PCB layouts with minimal thermal derating up to TJ = 175 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Rating | 40 V - supports 12 V and 48 V automotive bus architectures with margin against load-dump transients. |
| RDS(on) | 1.24 mΩ @ VGS = 10 V, TC = 25 °C - enables < 0.5 W conduction loss at 200 A, critical for high-current battery switches. |
| ID (Cont.) | 350 A @ TC = 25 °C - validated for sustained high-current operation when mounted on 1"² FR4 PCB with 2 oz copper. |
| Qg / Qgd | 86–107 nC total gate charge; Qgd = 6 nC - low gate-drain charge minimizes voltage-dependent switching losses in PWM applications. |
| trr / Qrr | 52–68 ns reverse recovery time; 36–47 nC recovered charge - reduces body-diode commutation loss in synchronous rectification and bidirectional converters. |
| TJ Range | −55 °C to +175 °C - qualified per AEC-Q101 for under-hood automotive environments including engine control and ADAS power stages. |
| RthJC | 0.3 °C/W - enables direct thermal coupling to heatsink or copper plane, supporting > 400 W power dissipation with minimal ΔT. |
Pinout & Package
Package: PowerPAK® SO-8L (PPKSO8LWLA), 6.15 mm × 4.90 mm footprint, thermally enhanced exposed drain paddle on bottom side. Pin 1 marked with dot; pins 1–3 are source terminals, pin 4 is gate, drain connected to bottom paddle.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source (S) | Three parallel source terminals reduce bond-wire inductance and improve current sharing; required for full 350 A rating. |
| 4 | Gate (G) | Single gate input with Rg = 1.0–2.64 Ω - supports standard 10 V gate drivers without external gate resistor for fast turn-on. |
| Drain (paddle) | Drain (D) | Exposed copper drain paddle provides primary thermal path and low-inductance high-current return; soldered directly to PCB ground plane. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use with extended temperature cycling, humidity, and mechanical shock testing per JESD47. |
| Qgd/Qgs ratio < 1 | Reduces Miller plateau duration and improves controllability during hard switching, lowering EMI and dv/dt stress. |
| 100 % Rg tested | Ensures gate resistance consistency across production lots, critical for predictable gate drive timing and ESD robustness. |
| 100 % UIS tested | Each unit passes unclamped inductive switching test at 48 A, 40 V, confirming ruggedness against inductive flyback energy. |
| Low Ciss/Coss ratio | Ciss = 5309–6636 pF, Coss = 1521–1902 pF - supports ZVS operation in resonant topologies with reduced capacitive losses. |
Applications
| Automotive Battery Disconnect Switch | 48 V Mild Hybrid DC–DC Converter |
|---|---|
Use Scenario: High-side switch isolating 12 V starter battery from vehicle electronics during cranking or fault conditions. IC Role / Device Role / Timing Role: Main power FET controlling bidirectional current flow with fast turn-off (< 44 ns td(off)) to prevent backfeed. Use Value: 1.24 mΩ RDS(on) limits voltage drop to < 440 mV at 350 A, preserving cranking voltage while enabling compact thermal design. |
Use Scenario: Primary-side synchronous rectifier in 48 V–12 V bi-directional buck-boost converter for mild hybrid energy recovery. IC Role / Device Role / Timing Role: Low-side switch with body diode used for freewheeling; trr = 52–68 ns enables efficient zero-voltage switching. Use Value: Low Qrr (36–47 nC) and fast fall time (13–17 ns) minimize commutation loss, improving converter efficiency by ≥0.8% at 5 kW. |
| Electric Power Steering (EPS) Motor Driver | Onboard Charger (OBC) Input Stage |
Use Scenario: Half-bridge leg in 3-phase inverter driving brushless EPS motor with peak currents > 250 A. IC Role / Device Role / Timing Role: High-current phase-leg switch operating at 20–50 kHz PWM with tight dead-time control. Use Value: 0.3 °C/W RthJC allows direct mounting to aluminum heatsink, maintaining TJ < 150 °C even at 95% duty cycle in ambient 105 °C. |
Use Scenario: AC–DC front-end switch in 6.6 kW OBC handling PFC and isolation stage switching. IC Role / Device Role / Timing Role: High-side switch in totem-pole PFC bridge with fast turn-on (td(on) = 18–24 ns) and low Qg. Use Value: Optimized Qgd/Qgs ratio suppresses shoot-through risk during high dv/dt transitions, increasing system reliability in 230 VAC input designs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFS7530PbF | RDS(on) = 1.3 mΩ @ 10 V, but rated only to 150 °C TJ and not AEC-Q101 qualified; RthJC = 0.45 °C/W. | Lacks automotive qualification and thermal margin for under-hood use; suitable for industrial UPS or telecom PSUs. | Select IRFS7530PbF only if AEC-Q101 is not required and thermal budget permits higher junction rise. |
| STL220N4F7AG | 40 V, RDS(on) = 0.95 mΩ @ 10 V, AEC-Q101 qualified, but in LFPAK56 package (RthJC = 0.55 °C/W); higher Ciss (7500 pF). | Better on-resistance but slower switching due to higher capacitance; less effective in >100 kHz PFC stages. | Choose STL220N4F7AG where ultra-low conduction loss dominates, but avoid in high-frequency ZVS designs requiring low Qgd. |
Compared with IRFS7530PbF and STL220N4F7AG, SQJA36EP-T1_GE3 uniquely balances AEC-Q101 compliance, 175 °C operation, 0.3 °C/W thermal resistance, and Qgd-optimized switching - making it the preferred choice for thermally constrained, high-reliability automotive power stages where both efficiency and ruggedness are mandatory.
Availability
SQJA36EP-T1_GE3 is available at Aetrix Electronics and suitable for automotive battery management systems, electric power steering inverters, and 48 V mild hybrid DC–DC converters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for SQJA36EP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing applications.
The SQJA36EP-T1_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-current, high-temperature power switching in next-generation 12 V/48 V vehicle architectures.
FAQ
What is the maximum continuous drain current rating for SQJA36EP-T1_GE3 at 125 °C case temperature?
The SQJA36EP-T1_GE3 supports 234 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK SO-8L package and must be applied when ambient or board-level thermal resistance prevents junction temperature from exceeding 175 °C. Designers should verify actual TJ using RthJC = 0.3 °C/W and measured TC.
Is SQJA36EP-T1_GE3 pin-compatible with standard SO-8 MOSFETs?
No - SQJA36EP-T1_GE3 uses the PowerPAK SO-8L package, which has a different pinout and thermal pad layout than standard SO-8. It features three source pins (1, 2, 3), one gate pin (4), and an exposed drain paddle on the bottom. Standard SO-8 footprints will not accommodate its thermal requirements or terminal configuration, requiring dedicated land pattern per Vishay document 78020.
Does SQJA36EP-T1_GE3 include integrated ESD protection?
The SQJA36EP-T1_GE3 does not specify integrated ESD protection circuitry. However, it undergoes 100 % Rg testing and is rated for ±20 V gate-source voltage, indicating robustness against typical gate oxide ESD events. External TVS or RC snubbers are recommended for gate protection in high-noise automotive environments per AEC-Q100 guidelines.
What is the body diode forward voltage of SQJA36EP-T1_GE3 at 15 A and room temperature?
The body diode forward voltage (VSD) of SQJA36EP-T1_GE3 is rated at ≤1.1 V when IF = 15 A and VGS = 0 V at TA = 25 °C. This value is confirmed in the "Source-Drain Diode Ratings and Characteristics" section of the datasheet and is critical for evaluating conduction loss during freewheeling operation in half-bridge or synchronous rectifier configurations.
Can SQJA36EP-T1_GE3 be used in avalanche mode, and what is its single-pulse energy rating?
Yes - SQJA36EP-T1_GE3 is 100 % UIS tested and rated for single-pulse avalanche energy (EAS) of 115 mJ with L = 0.1 mH. This capability supports reliable operation during inductive switching transients in motor drives and solenoid controls, provided that pulse width remains ≤300 μs and duty cycle ≤2 % as defined in the Absolute Maximum Ratings notes.
SQJA36EP-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 350A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.24mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 107 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6636 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 500W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJA36EP-T1_GE3 FAQ
1.How can I place an order for SQJA36EP-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJA36EP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJA36EP-T1_GE3 reliable?
The price and inventory of SQJA36EP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJA36EP-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJA36EP-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJA36EP-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJA36EP-T1_GE3?
SQJA36EP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJA36EP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJA36EP-T1_GE3?
For technical support, including SQJA36EP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJA36EP-T1_GE3 requirements.
6.How does Aetrix verify that SQJA36EP-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJA36EP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJA36EP-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJA36EP-T1_GE3?
All SQJA36EP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJA36EP-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJA36EP-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJA36EP-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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