My Inquiry
My Account
Vishay Siliconix SQJA37EP-T1_BE3
- Part No.:
- SQJA37EP-T1_BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJA37EP-T1_BE3.pdf
- Description:
- P-CHANNEL 30-V (D-S) 175C MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:6,000
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SQJA37EP-T1_BE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET designed for high-efficiency, high-reliability power switching in 12 V and 24 V systems. It features -30 V VDS, 9.2 mΩ RDS(on) at VGS = -10 V, -30 A continuous drain current, AEC-Q101 qualification, and operation up to +175 °C junction temperature - deployed in engine control modules and battery disconnect circuits.
For engineers reviewing the SQJA37EP-T1_BE3 datasheet, SQJA37EP-T1_BE3 pinout, SQJA37EP-T1_BE3 application, or SQJA37EP-T1_BE3 equivalent, key selection criteria include its low RDS(on) at -4.5 V gate drive, robust avalanche energy rating (33.8 mJ), and PowerPAK® SO-8L package optimized for thermal performance in space-constrained automotive PCB layouts.
Technical Context
This P-channel MOSFET uses TrenchFET® technology to achieve low on-resistance and fast switching with controlled Qg (65–100 nC) and low Ciss (3620–4900 pF). Its gate threshold voltage range (-1.5 V to -2.5 V) ensures reliable turn-on with standard logic-level automotive controllers.
The device integrates a robust body diode with trr = 22–45 ns and Qrr = 11–25 nC, enabling efficient synchronous rectification and reverse polarity protection. Thermal design is supported by RthJC = 3.3 °C/W and RthJA = 70 °C/W (PCB mount), validated under AEC-Q101 stress conditions including 100 % UIS and Rg testing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum blocking voltage compatible with 24 V automotive systems with margin for load dump transients. |
| RDS(on) @ VGS = -10 V | 9.2 mΩ - Enables <1 W conduction loss at 30 A, critical for high-current battery switches. |
| RDS(on) @ VGS = -4.5 V | 14.6 mΩ - Ensures functional switching with 5 V microcontroller outputs without level-shifting. |
| ID Continuous | -30 A @ TC = 25 °C - Sustains full rated current with adequate heatsinking on FR4 PCB. |
| EAS | 33.8 mJ - Withstands single-pulse inductive energy in motor drive or solenoid control without failure. |
| TJ Range | -55 °C to +175 °C - Meets under-hood temperature requirements per AEC-Q101 Grade 0. |
| Qg | 65–100 nC - Balances switching speed and gate driver power demand in PWM-controlled DC/DC stages. |
Pinout & Package
Package: PowerPAK® SO-8L (single-side thermal pad), 5.13 mm × 6.15 mm footprint, 1.07 mm height, lead (Pb)-free and halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce resistance and improve current sharing; connected to thermal pad for enhanced heat transfer to PCB. |
| 5 | Gate (G) | Single gate input with Rg = 2.4–7.2 Ω - enables stable switching without external gate resistor in many applications. |
| 6, 7, 8 | Drain (D) | Three drain terminals tied to exposed copper thermal pad - provides low-inductance, high-current path to ground plane. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use across temperature, humidity, vibration, and lifetime reliability per JESD47. |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency and unclamped inductive switching robustness - no field failures due to latent parametric drift. |
| Low RDS(on) at -4.5 V | 14.6 mΩ enables direct interface with 5 V MCU GPIOs in battery management and power distribution units. |
| Enhanced thermal performance | RthJC = 3.3 °C/W allows >30 W power dissipation with minimal ΔT between junction and heatsink plane. |
| Optimized body diode | VSD = -0.78 V (typ.) and trr = 22 ns support efficient freewheeling in H-bridge motor drivers. |
Applications
| Engine Control Unit (ECU) Power Switching | Battery Disconnect Module (BDM) |
|---|---|
|
Use Scenario: High-side switching of fuel injector drivers and ignition coils in gasoline/diesel ECUs. IC Role / Device Role / Timing Role: P-channel high-side switch controlling 12 V loads with fast turn-off (<100 ns td(off)) to prevent coil saturation overshoot. Use Value: Low RDS(on) minimizes I²R heating during sustained 30 A pulses; 175 °C rating ensures operation near hot engine blocks. |
Use Scenario: Isolating starter battery from auxiliary loads during cranking or fault conditions. IC Role / Device Role / Timing Role: Bidirectional reverse-polarity and overcurrent protection switch with integrated body diode conduction path. Use Value: 33.8 mJ EAS withstands cranking-induced inductive kickback; AEC-Q101 compliance guarantees 15+ year field life. |
| 12 V/48 V Mild Hybrid DC/DC Converter | Automotive LED Headlamp Driver |
|
Use Scenario: Synchronous rectification in buck-boost converters interfacing 12 V and 48 V domains. IC Role / Device Role / Timing Role: Low-side synchronous rectifier with fast trr (22 ns) and low Qrr (11 nC) to minimize switching losses at 200–500 kHz. Use Value: 14.6 mΩ RDS(on) at -4.5 V supports gate drive from 5 V controller; low Coss improves light-load efficiency. |
Use Scenario: PWM dimming and overcurrent protection for adaptive LED matrix headlamps. IC Role / Device Role / Timing Role: High-side current sink switch modulating LED strings with precise duty-cycle control. Use Value: Fast td(on)/tr (12 ns / 4 ns) enables <1 μs pulse resolution; -1.5 V VGS(th) ensures clean turn-on at cold start (-40 °C). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF4905PbF | Higher RDS(on) (20 mΩ @ -10 V), TO-220 package, no AEC-Q101 qualification. | Limited to non-automotive industrial use; requires larger heatsink and manual soldering. | Choose only for cost-sensitive, non-automotive designs where thermal budget permits higher conduction loss. |
| AO4407A | Lower current rating (-12 A), SO-8 package, AEC-Q101 qualified but not 175 °C rated. | Suitable for infotainment or body electronics, not under-hood power switching. | Select when board space is constrained and junction temperature remains below 150 °C; verify EAS margin for inductive loads. |
Compared with IRF4905PbF and AO4407A, SQJA37EP-T1_BE3 uniquely combines AEC-Q101 qualification, +175 °C operation, and sub-10 mΩ RDS(on) in a thermally enhanced PowerPAK® SO-8L - making it the only option for high-current, high-temperature automotive power switching where reliability and compact layout are co-critical.
Availability
SQJA37EP-T1_BE3 is available at Aetrix Electronics and suitable for engine control units, battery disconnect modules, and 12 V/48 V mild hybrid converters requiring stable component supply across extended automotive production lifecycles.
Supply support for SQJA37EP-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJA37EP-T1_BE3 belongs to Vishay's TrenchFET® automotive MOSFET product line, engineered specifically for high-reliability, high-temperature power switching in engine bay and battery system applications.
FAQ
What is the maximum continuous drain current rating for SQJA37EP-T1_BE3 at 125 °C case temperature?
The SQJA37EP-T1_BE3 maintains a continuous drain current rating of -30 A at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This reflects its robust thermal design and AEC-Q101 qualification - unlike many competing P-channel MOSFETs that derate significantly above 100 °C. The device sustains this current with proper PCB copper area and airflow, verified under JEDEC JESD51-2 thermal test conditions.
Does SQJA37EP-T1_BE3 support 5 V gate drive in automotive applications?
Yes, SQJA37EP-T1_BE3 is fully compatible with 5 V gate drive: its RDS(on) is specified at VGS = -4.5 V (14.6 mΩ max), and its gate threshold voltage range (-1.5 V to -2.5 V) ensures strong enhancement-mode turn-on even at cold temperatures. This eliminates need for gate drivers in MCU-based battery switches and ECU power rails - a key advantage over higher-threshold alternatives like the IRF4905PbF.
What is the avalanche energy rating of SQJA37EP-T1_BE3, and how is it validated?
The SQJA37EP-T1_BE3 has a single-pulse avalanche energy rating (EAS) of 33.8 mJ, measured under standardized conditions (L = 0.1 mH, IAS = -26 A). This rating is 100 % production-tested per AEC-Q101 requirements, ensuring every unit can safely absorb inductive energy from solenoids, relays, or motor windings without degradation - critical for battery disconnect and starter circuit protection.
How does the PowerPAK® SO-8L package of SQJA37EP-T1_BE3 improve thermal performance versus standard SO-8?
The PowerPAK® SO-8L package of SQJA37EP-T1_BE3 delivers RthJC = 3.3 °C/W - over 3× better than standard SO-8 MOSFETs - by exposing the drain and source copper on the bottom side for direct PCB thermal coupling. Its dual-sided copper structure and optimized pad layout (per Doc. #63818) enable >30 W power dissipation on 1"² FR4, making SQJA37EP-T1_BE3 viable for high-current automotive switching where TO-220 footprints are prohibited.
Is SQJA37EP-T1_BE3 suitable for reverse polarity protection in 24 V systems?
Yes, SQJA37EP-T1_BE3 is widely used for reverse polarity protection in 24 V commercial vehicle systems. Its -30 V VDS provides margin against ISO 16750-2 load dump transients, while its low RDS(on) (9.2 mΩ) limits voltage drop to <0.3 V at 30 A - preserving system efficiency. The AEC-Q101 qualification and 175 °C rating ensure reliability in alternator-bay environments where ambient temperatures exceed 100 °C.
SQJA37EP-T1_BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 9.2mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 100 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4900 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 45W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJA37EP-T1_BE3 FAQ
1.How can I place an order for SQJA37EP-T1_BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJA37EP-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJA37EP-T1_BE3 reliable?
The price and inventory of SQJA37EP-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJA37EP-T1_BE3 is usually 5 days.
3.What payment methods are accepted for SQJA37EP-T1_BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJA37EP-T1_BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJA37EP-T1_BE3?
SQJA37EP-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJA37EP-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJA37EP-T1_BE3?
For technical support, including SQJA37EP-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJA37EP-T1_BE3 requirements.
6.How does Aetrix verify that SQJA37EP-T1_BE3 is sourced from the original manufacturer or authorized distributors?
All SQJA37EP-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJA37EP-T1_BE3 meets industry standards.
7.What is the process for return or replacement of SQJA37EP-T1_BE3?
All SQJA37EP-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJA37EP-T1_BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJA37EP-T1_BE3 part is unused and in its original packaging.
Return procedure for SQJA37EP-T1_BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SQJA37EP-T1_BE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
