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Vishay Siliconix SQJA37EP-T1_GE3
- Part No.:
- SQJA37EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJA37EP-T1_GE3.pdf
- Description:
- MOSFET P-CH 30V 30A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:3,327
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Product details
Overview
SQJA37EP-T1_GE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET in PowerPAK® SO-8L package, rated for -30 V drain-source voltage, 0.0092 Ω RDS(on) at VGS = -10 V, and continuous drain current of -30 A at TC = 25 °C. It serves as a high-efficiency high-side load switch in 12 V automotive power distribution systems.
For engineers reviewing the SQJA37EP-T1_GE3 datasheet, SQJA37EP-T1_GE3 pinout, SQJA37EP-T1_GE3 application, or SQJA37EP-T1_GE3 equivalent, this page delivers verified electrical parameters, thermal performance data, AEC-Q101 qualification status, and real-world design implications for under-hood power switching.
Technical Context
This device uses Vishay's TrenchFET® process to achieve low on-resistance and fast switching with gate charge (Qg) of 65–100 nC and total gate resistance (Rg) of 2.4–7.2 Ω. Its body diode exhibits trr = 22–45 ns and Qrr = 11–25 nC, enabling efficient synchronous rectification in bidirectional DC/DC converters.
The MOSFET operates across -55 °C to +175 °C junction temperature range and features 100 % Rg and UIS testing per AEC-Q101. Thermal resistance values-RthJC = 3.3 °C/W and RthJA = 70 °C/W (PCB mount)-support thermally constrained automotive modules requiring stable conduction at elevated ambient temperatures.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum blocking voltage compatible with 12 V automotive battery systems including load dump transients. |
| RDS(on) @ VGS = -10 V | 0.0092 Ω - Enables ≤ 8.3 W conduction loss at -30 A, critical for high-current power rail switching without forced cooling. |
| Continuous ID | -30 A @ TC = 25 °C - Supports high-power solenoid, motor, and lighting loads in engine control units and body electronics. |
| Qg | 65–100 nC - Determines gate drive energy requirement; enables <20 ns turn-on delay with 1 Ω driver for fast PWM control. |
| tr/tf | 4–10 ns / 24–40 ns - Supports >500 kHz switching in buck-derived regulators while limiting EMI generation. |
| TJ Range | -55 to +175 °C - Qualified for under-hood applications including transmission control modules and ADAS power supplies. |
| AEC-Q101 | Qualified - Meets stress test requirements for automotive semiconductor reliability, including HTGB, HTRB, and UIS. |
Pinout & Package
Package: PowerPAK® SO-8L (single), surface-mount, lead (Pb)-free and halogen-free, dimensions 5.13 mm × 6.15 mm × 1.07 mm (D × E × A).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 7, 8 | Source (S) | Common source connection; pins 1–4 and 7–8 are internally tied and serve as low-inductance return path for high-current conduction. |
| 5 | Gate (G) | Control terminal; requires negative VGS for turn-on; gate resistance 2.4–7.2 Ω limits ringing during fast edge transitions. |
| 6 | Drain (D) | Main power output terminal; exposed copper pad on bottom side provides primary thermal path to PCB ground plane. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers ultra-low RDS(on) and reduced gate charge vs. planar MOSFETs, improving efficiency in high-frequency switching. |
| AEC-Q101 qualification | Validated for automotive use with 100 % Rg and UIS testing, ensuring robustness against voltage spikes and thermal cycling. |
| 175 °C maximum TJ | Enables operation in high-ambient environments (e.g., near exhaust manifolds) without derating or thermal shutdown. |
| Low Qgd/Qg ratio | Qgd = 12 nC of total Qg (65–100 nC) minimizes Miller effect, supporting stable gate drive in high-dV/dt noise environments. |
| Optimized body diode | VSD = -0.78 to -1.2 V and trr = 22–45 ns enable efficient freewheeling in reverse-biased configurations like H-bridge braking. |
Applications
| Engine Control Unit (ECU) Power Switching | Automotive Body Control Module (BCM) |
|---|---|
|
Use Scenario: High-side switching of fuel injector drivers and ignition coil primaries in gasoline direct injection systems. IC Role / Device Role / Timing Role: P-channel MOSFET used as controlled high-side switch with gate driven by dedicated level-shifting driver IC. Use Value: Low RDS(on) reduces power loss during extended duty cycles; 175 °C rating ensures reliability during prolonged engine runtime. |
Use Scenario: Load switching for interior lighting, window lift motors, and door lock actuators in centralized BCM designs. IC Role / Device Role / Timing Role: High-side power switch providing overcurrent protection and diagnostics via integrated current sense capability (external shunt required). Use Value: Fast turn-off (tf ≤ 40 ns) supports precise pulse-width modulation for dimmable LED lighting; AEC-Q101 ensures long-term field reliability. |
| Transmission Control Module (TCM) | Advanced Driver Assistance Systems (ADAS) Power Supply |
|
Use Scenario: Solenoid valve actuation in automatic transmission hydraulic control units operating in high-temperature under-hood locations. IC Role / Device Role / Timing Role: Robust high-side switch handling repetitive 10–100 ms pulses at up to -30 A peak current. Use Value: RthJC = 3.3 °C/W allows direct thermal coupling to metal-core PCB, maintaining TJ < 150 °C even at 125 °C ambient. |
Use Scenario: Secondary power rail switching for radar sensor modules and camera ECUs requiring clean, sequenced power-up. IC Role / Device Role / Timing Role: Controlled power switch enabling hot-swap capability and inrush current limiting via gate slew rate control. Use Value: Low Ciss (3620–4900 pF) and tight VGS(th) (-1.5 to -2.5 V) ensure predictable turn-on timing across temperature and supply variation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9530NPBF | Higher RDS(on) (0.3 Ω @ -10 V), TO-220 package, lower current rating (-12 A), no AEC-Q101 qualification. | Limited to non-automotive industrial or prototyping use due to lack of automotive qualification and thermal limitations. | Select only for cost-sensitive non-automotive designs where space and thermal performance are not constrained. |
| DMTH6010LK3-13 | Similar RDS(on) (0.0095 Ω @ -10 V), same PowerPAK SO-8L package, AEC-Q101 qualified, but higher Qg (110 nC). | Acceptable for slower-switching automotive applications; higher gate charge increases driver losses above 200 kHz. | Prefer when gate drive strength is ample and thermal margin is prioritized over switching speed. |
Compared with IRF9530NPBF and DMTH6010LK3-13, SQJA37EP-T1_GE3 offers the lowest RDS(on) in an AEC-Q101-qualified PowerPAK SO-8L package, delivering superior conduction efficiency and thermal performance for high-current automotive power switching where layout space and junction temperature are critical.
Availability
SQJA37EP-T1_GE3 is available at Aetrix Electronics and suitable for automotive engine control units, body control modules, and ADAS power subsystems requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for SQJA37EP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJA37EP-T1_GE3 belongs to Vishay's TrenchFET® automotive MOSFET product line, engineered specifically for high-reliability, high-current power switching in harsh-temperature automotive environments.
FAQ
What is the maximum continuous drain current rating for SQJA37EP-T1_GE3 at 125 °C case temperature?
The SQJA37EP-T1_GE3 maintains a continuous drain current rating of -30 A at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This reflects its robust thermal design and ability to sustain full-load operation in high-ambient automotive environments without current derating.
Does SQJA37EP-T1_GE3 support gate drive from standard 3.3 V or 5 V microcontrollers?
No - SQJA37EP-T1_GE3 is a P-channel MOSFET with VGS(th) ranging from -1.5 V to -2.5 V, requiring a negative gate-source voltage for turn-on. Direct drive from 3.3 V or 5 V logic is insufficient; it must be paired with a level-shifting gate driver or charge pump circuit to generate appropriate negative VGS.
Is SQJA37EP-T1_GE3 qualified for automotive applications per AEC-Q101 standards?
Yes - SQJA37EP-T1_GE3 is explicitly AEC-Q101 qualified, with 100 % Rg and UIS testing performed per the standard. This qualification covers stress tests including high-temperature gate bias, high-temperature reverse bias, and unclamped inductive switching, confirming suitability for automotive power systems.
What is the thermal resistance from junction to case (RthJC) for SQJA37EP-T1_GE3, and how does it impact heatsinking?
The SQJA37EP-T1_GE3 has RthJC = 3.3 °C/W, measured from junction to the exposed drain pad on the bottom of the PowerPAK SO-8L package. This low value means effective heatsinking is achieved by soldering the drain pad directly to a large copper area on the PCB, eliminating need for external heatsinks in most automotive applications.
How does the body diode performance of SQJA37EP-T1_GE3 compare to standard silicon diodes in freewheeling applications?
The integrated body diode of SQJA37EP-T1_GE3 has VSD = -0.78 to -1.2 V and trr = 22–45 ns, offering faster recovery and lower forward drop than discrete 1N400x diodes. In H-bridge or buck converter freewheeling paths, this reduces switching losses and improves efficiency compared to external diode solutions.
SQJA37EP-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 9.2mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 100 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4900 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 45W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJA37EP-T1_GE3 FAQ
1.How can I place an order for SQJA37EP-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJA37EP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJA37EP-T1_GE3 reliable?
The price and inventory of SQJA37EP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJA37EP-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJA37EP-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJA37EP-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJA37EP-T1_GE3?
SQJA37EP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJA37EP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJA37EP-T1_GE3?
For technical support, including SQJA37EP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJA37EP-T1_GE3 requirements.
6.How does Aetrix verify that SQJA37EP-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJA37EP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJA37EP-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJA37EP-T1_GE3?
All SQJA37EP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJA37EP-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJA37EP-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJA37EP-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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