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Vishay Siliconix SQJA38EP-T1_GE3
- Part No.:
- SQJA38EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJA38EP-T1_GE3.pdf
- Description:
- MOSFET N-CH 40V 60A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:5,635
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Product details
Overview
SQJA38EP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 40 V (D–S), 60 A continuous drain current at TC = 25 °C, and 175 °C maximum junction temperature, with RDS(on) of 3.9 mΩ at VGS = 10 V and 4.8 mΩ at VGS = 4.5 V - used as a high-efficiency main switch in 12 V automotive DC–DC converters and motor control stages.
For engineers reviewing the SQJA38EP-T1_GE3 datasheet, SQJA38EP-T1_GE3 pinout, SQJA38EP-T1_GE3 application, or SQJA38EP-T1_GE3 equivalent, key selection criteria include AEC-Q101 qualification, 100 % Rg and UIS testing, PowerPAK SO-8L leadless package thermal performance, and body diode recovery characteristics for synchronous rectification and H-bridge freewheeling.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low RDS(on) and fast switching in high-current automotive power stages. Its gate charge profile (Qg = 48.2–75 nC, Qgd = 8 nC) supports efficient PWM operation up to 200 kHz in buck converters, while Crss = 27–40 pF ensures robust EMI immunity under hard-switching conditions.
The device integrates a co-packaged body diode with trr = 39–80 ns and Qrr = 46–95 nC, enabling reliable reverse recovery in bidirectional motor drive and regenerative braking circuits. Thermal design is anchored by RthJC = 3.1 °C/W and RthJA = 70 °C/W (1"² FR4 PCB), supporting high-power density layouts without forced airflow.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS (max) | 40 V - supports 12 V automotive systems with 3× transient margin against load dump spikes. |
| RDS(on) @ VGS = 10 V | 3.9 mΩ - enables ≤ 2.3 W conduction loss at 60 A, critical for thermally constrained engine bay modules. |
| ID (cont) @ TC = 25 °C | 60 A - delivers full output current capability in compact PowerPAK SO-8L footprint without derating. |
| TJ (max) | +175 °C - certified for under-hood applications including transmission control units and EPS modules. |
| AEC-Q101 qualified | Qualified per stress test standard - required for safety-critical automotive subsystems per ISO 26262 ASIL-B readiness. |
| Qg (total) | 48.2–75 nC - determines gate driver power requirement and switching transition time in 12 V/48 V hybrid architectures. |
| Body diode VSD | 0.76–1.2 V @ IF = 10 A - reduces freewheeling losses versus external Schottky solutions in half-bridge configurations. |
Pinout & Package
Package: PowerPAK® SO-8L (leadless, exposed copper drain pad on bottom side; dimensions: 5.13 mm × 6.15 mm × 1.07 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 7, 8 | Source (S) | Five parallel source terminals reduce parasitic inductance and improve current sharing in high-di/dt switching. |
| 4 | Gate (G) | Single gate input with Rg = 0.55–1.65 Ω - enables stable gate drive with minimal external series resistance. |
| 5, 6 | Drain (D) | Two drain terminals connected to large bottom-side copper pad - primary thermal path to PCB heatsink layer. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Enables ultra-low RDS(on) at 4.5 V gate drive - supports stop-start systems with weak battery voltage during cranking. |
| 100 % Rg and UIS tested | Guarantees gate robustness against overvoltage transients and single-pulse avalanche energy (EAS = 42 mJ) in inductive loads. |
| PowerPAK SO-8L package | Reduces thermal resistance by 40 % vs. standard SO-8 - achieves 68 W PD at TC = 25 °C with no heatsink. |
| Body diode trr & Qrr | 39–80 ns / 46–95 nC - minimizes switching loss and voltage overshoot during commutation in BLDC motor drives. |
| Exposed drain pad | Provides direct thermal interface to inner PCB copper layers - eliminates need for thermal vias in space-constrained modules. |
Applications
| Automotive DC–DC Converter | Electric Power Steering (EPS) |
|---|---|
Use Scenario: High-efficiency 12 V to 5 V/3.3 V buck converter supplying ADAS sensors and microcontrollers. IC Role / Device Role / Timing Role: Primary high-side synchronous rectifier switch operating at 200–500 kHz PWM frequency. Use Value: 3.9 mΩ RDS(on) limits conduction loss to < 1.5 W at 40 A, enabling > 95 % efficiency without active cooling. |
Use Scenario: Three-phase inverter driving 12 V brushed or brushless assist motor in column-assist EPS. IC Role / Device Role / Timing Role: Low-side switch in H-bridge leg handling peak currents up to 60 A during torque assist. Use Value: 175 °C TJ rating and AEC-Q101 qualification ensure reliability across -40 °C to +125 °C ambient under hood. |
| Start–Stop System Control | Automotive HVAC Blower |
Use Scenario: Load switch managing battery-to-bus connection during engine restart events with high inrush current. IC Role / Device Role / Timing Role: Main power FET controlling 12 V bus distribution with soft-start and overcurrent protection. Use Value: 220 A pulsed drain current (IDM) and 29 A single-pulse avalanche current (IAS) withstand cranking transients. |
Use Scenario: PWM-controlled blower motor driver in climate control system with variable speed and reverse airflow. IC Role / Device Role / Timing Role: Half-bridge low-side switch enabling bidirectional motor control via body diode conduction. Use Value: Body diode VSD = 0.76 V and Qrr = 46 nC reduce freewheeling loss and EMI during direction reversal. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | Higher RDS(on) = 5.2 mΩ @ 10 V; TO-252 package; RthJA = 90 °C/W; not AEC-Q101 qualified. | Limited to non-safety-critical cabin modules; unsuitable for under-hood use above 150 °C. | Select only for cost-sensitive interior applications where AEC-Q101 and thermal performance are not required. |
| STL220N4F7AG | Same 40 V rating, lower RDS(on) = 2.2 mΩ @ 10 V; PowerFLAT 5x6 package; AEC-Q101 qualified; higher Qg = 95 nC. | Better conduction efficiency but demands stronger gate driver; larger footprint than PowerPAK SO-8L. | Prefer when minimizing conduction loss dominates over layout area and gate drive capability constraints. |
Compared with IRF7470PBF and STL220N4F7AG, SQJA38EP-T1_GE3 offers optimal balance of AEC-Q101 compliance, 3.9 mΩ RDS(on), compact PowerPAK SO-8L size, and proven 175 °C operation - making it the preferred choice for space- and thermal-constrained automotive power stages requiring production-grade reliability.
Availability
SQJA38EP-T1_GE3 is available at Aetrix Electronics and suitable for automotive power conversion, electric power steering, and start–stop system control requiring stable component supply and long-term lifecycle support.
Supply support for SQJA38EP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
SQJA38EP-T1_GE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-current, high-temperature under-hood applications demanding AEC-Q101 qualification and robust avalanche performance.
FAQ
What is the maximum continuous drain current rating for SQJA38EP-T1_GE3 at 125 °C case temperature?
The SQJA38EP-T1_GE3 supports 48 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK SO-8L package and must be applied in thermal simulations when ambient temperatures exceed 85 °C or airflow is restricted. The SQJA38EP-T1_GE3 maintains full functionality across its entire -55 °C to +175 °C junction temperature range.
Does SQJA38EP-T1_GE3 support 4.5 V logic-level gate drive in automotive applications?
Yes, SQJA38EP-T1_GE3 is fully characterized for 4.5 V gate drive, delivering RDS(on) = 4.8 mΩ at ID = 8 A and 25 °C. This enables reliable operation in automotive stop–start systems where battery voltage drops below 9 V during cranking. The gate threshold voltage range (1.4–2.4 V) ensures clean turn-on even with noisy 12 V rail conditions, and the SQJA38EP-T1_GE3 has been validated for 100 % Rg testing to guarantee gate robustness.
Is SQJA38EP-T1_GE3 pin-compatible with standard SO-8 or PowerPAK SO-8 packages?
No, SQJA38EP-T1_GE3 uses the leadless PowerPAK SO-8L package with an exposed drain pad on the bottom side and no gull-wing leads - it is not mechanically or electrically pin-compatible with standard SO-8 or PowerPAK SO-8 (lead-frame version). PCB layout must follow Vishay's recommended pad pattern (Document 63818), and rework requires specialized hot-air equipment due to the absence of solderable terminations on the perimeter.
What is the body diode reverse recovery charge (Qrr) specification for SQJA38EP-T1_GE3?
The body diode Qrr of SQJA38EP-T1_GE3 is 46–95 nC, measured at IF = 1 A, di/dt = 100 A/μs, and TJ = 25 °C. This parameter directly impacts switching loss and voltage overshoot during freewheeling in half-bridge and synchronous rectifier topologies. The SQJA38EP-T1_GE3's Qrr is optimized for low-loss operation in automotive motor drives, and its trr (39–80 ns) supports clean commutation up to 100 kHz PWM frequencies.
How does the thermal performance of SQJA38EP-T1_GE3 compare to traditional SO-8 MOSFETs?
SQJA38EP-T1_GE3 achieves RthJC = 3.1 °C/W and RthJA = 70 °C/W (on 1"² FR4 PCB), representing ~40 % lower junction-to-ambient resistance than conventional SO-8 packaged MOSFETs. This improvement stems from the PowerPAK SO-8L's exposed copper drain pad, which provides a direct thermal path to the PCB ground plane. As a result, the SQJA38EP-T1_GE3 delivers 68 W maximum power dissipation at TC = 25 °C - significantly higher than typical SO-8 devices limited to ~2.5 W.
SQJA38EP-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.9mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 75 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3900 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 68W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJA38EP-T1_GE3 FAQ
1.How can I place an order for SQJA38EP-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJA38EP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJA38EP-T1_GE3 reliable?
The price and inventory of SQJA38EP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJA38EP-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJA38EP-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJA38EP-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJA38EP-T1_GE3?
SQJA38EP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJA38EP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJA38EP-T1_GE3?
For technical support, including SQJA38EP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJA38EP-T1_GE3 requirements.
6.How does Aetrix verify that SQJA38EP-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJA38EP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJA38EP-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJA38EP-T1_GE3?
All SQJA38EP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJA38EP-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJA38EP-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJA38EP-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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