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Vishay Siliconix SQJA42EP-T1_GE3
- Part No.:
- SQJA42EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJA42EP-T1_GE3.pdf
- Description:
- MOSFET N-CH 40V 20A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:7,919
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Product details
Overview
SQJA42EP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel 40 V (D-S) MOSFET in PowerPAK SO-8L package, delivering RDS(on) = 9.4 mΩ at VGS = 10 V and 11.73 mΩ at VGS = 4.5 V, rated for continuous 20 A drain current at TC = 25 °C and operating up to +175 °C junction temperature - used in high-efficiency DC-DC converters and motor control stages in engine management systems.
For engineers reviewing the SQJA42EP-T1_GE3 datasheet, SQJA42EP-T1_GE3 pinout, SQJA42EP-T1_GE3 application, or SQJA42EP-T1_GE3 equivalent, this page provides verified thermal resistance (RthJC = 5.5 °C/W), avalanche energy rating (EAS = 16 mJ), gate charge (Qg = 22–33 nC), body diode recovery (trr = 28–60 ns), and AEC-Q101 qualification status to support robust automotive power design validation.
Technical Context
This MOSFET employs Vishay's TrenchFET® process to achieve low on-resistance with fast switching dynamics. Its 100 % Rg and UIS testing ensures gate robustness and unclamped inductive switching reliability under automotive transients.
The PowerPAK SO-8L leadless package enables high power density with exposed-drain thermal path and bottom-side solder interconnection. Thermal resistance from junction-to-case is 5.5 °C/W, and junction-to-ambient is 70 °C/W on a 1"² FR4 PCB - critical for thermally constrained under-hood applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum drain-source blocking voltage compatible with 12 V/24 V automotive battery systems including load dump conditions. |
| RDS(on) @ VGS = 10 V | 9.4 mΩ - Enables <1.9 W conduction loss at 20 A, supporting high-efficiency synchronous rectification in buck converters. |
| RDS(on) @ VGS = 4.5 V | 11.73 mΩ - Ensures stable operation with 3.3 V or 5 V gate drivers in low-voltage control logic interfaces. |
| ID Continuous | 20 A at TC = 25 °C - Sustains high-current motor gate drive or solenoid actuation without derating in heatsinked layouts. |
| TJ Operating Range | −55 °C to +175 °C - Qualified per AEC-Q101 for under-hood placement in engine control units and transmission modules. |
| EAS | 16 mJ - Withstands single-pulse inductive energy from relay coil or motor winding flyback without failure. |
| Qg | 22–33 nC - Supports efficient 100–500 kHz switching in DC-DC controllers while minimizing driver power consumption. |
Pinout & Package
PowerPAK SO-8L is a surface-mount, leadless package with exposed drain pad on bottom side (6.15 mm × 5.13 mm footprint). Thermal performance relies on full-solder coverage of the drain pad to PCB copper pour.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 7, 8 | Source (S) | Common source connection; pins 1/2/3/7/8 are internally bonded to source metal - used for low-inductance return path and thermal conduction. |
| 4 | Gate (G) | Control input; requires <20 V absolute max rating; gate resistance Rg = 1.74–5.3 Ω impacts switching speed and ringing. |
| 5, 6 | Drain (D) | High-side or low-side power switch node; pins 5/6 connect to exposed copper drain pad - primary thermal path to PCB. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use across temperature, humidity, vibration, and lifetime stress tests - required for ECU, ADAS, and powertrain modules. |
| 100 % Rg and UIS tested | Every unit screened for gate resistance consistency and unclamped inductive switching survival - eliminates field failures from transient overvoltage events. |
| TrenchFET® technology | Enables lower RDS(on) × Qg figure-of-merit than planar MOSFETs - improves efficiency in high-frequency switching applications. |
| Body diode trr = 28–60 ns | Fast reverse recovery supports synchronous rectifier operation without external Schottky diode in buck topologies. |
| Exposed drain thermal pad | Reduces RthJC to 5.5 °C/W - allows direct heat transfer to inner-layer copper or thermal vias, enabling compact thermal design. |
Applications
| Engine Control Unit (ECU) Power Stage | Automotive DC-DC Converter |
|---|---|
Use Scenario: High-side switch for fuel injector or ignition coil driver in gasoline/diesel engine management. IC Role / Device Role / Timing Role: N-channel MOSFET configured as low-side or high-side switch with bootstrap gate drive; handles repetitive 20 A pulsed loads at 1–10 Hz. Use Value: 175 °C operation ensures reliability near hot engine blocks; 16 mJ EAS withstands inductive kickback without snubber circuitry. |
Use Scenario: Synchronous rectifier in 48 V–12 V bidirectional buck-boost converter for mild hybrid vehicles. IC Role / Device Role / Timing Role: Low-side power switch operating at 200–300 kHz with 4.5 V gate drive from controller IC. Use Value: RDS(on) = 11.73 mΩ @ 4.5 V minimizes conduction loss; fast trr reduces body diode conduction time and associated losses. |
| Electric Power Steering (EPS) Motor Driver | Transmission Control Module (TCM) Solenoid Driver |
Use Scenario: Half-bridge leg in 3-phase inverter driving brushless EPS assist motor (≤ 1 kW). IC Role / Device Role / Timing Role: N-channel MOSFET in phase-leg configuration; switched at ≤ 20 kHz with gate charge Qg = 22–33 nC. Use Value: Low Qg enables fast turn-on/off with standard gate drivers; 5.5 °C/W RthJC maintains TJ < 150 °C under continuous 15 A RMS load. |
Use Scenario: On/off switch for hydraulic pressure control solenoids in automatic transmissions. IC Role / Device Role / Timing Role: Low-side switch controlling 12 V, 3–5 A solenoid coils with PWM duty cycling. Use Value: AEC-Q101 qualification ensures long-term reliability under thermal cycling; 20 A ID rating provides margin against surge currents during engagement. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | Higher RDS(on) (12.5 mΩ @ 10 V), TO-252 package, no AEC-Q101 qualification | Limited to non-safety-critical industrial or commercial power supplies | Select only if AEC-Q101 is not required and board space permits larger DPAK footprint. |
| STL220N4F7AG | Same 40 V rating, lower RDS(on) (0.85 mΩ), but 80 A rating and PowerFLAT 5x6 package; AEC-Q101 qualified | Better suited for higher-current inverters where thermal headroom is critical | Prefer when >20 A peak current or lower conduction loss is needed; verify gate drive compatibility with 4.5 V threshold. |
Compared with IRF7470PBF and STL220N4F7AG, SQJA42EP-T1_GE3 offers balanced trade-offs: AEC-Q101 compliance like STL220N4F7AG but in smaller PowerPAK SO-8L footprint, and lower RDS(on) than IRF7470PBF while maintaining proven gate drive compatibility with common automotive controllers.
Availability
SQJA42EP-T1_GE3 is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, automotive DC-DC converters, and transmission control modules requiring stable component supply across extended temperature and lifetime requirements.
Supply support for SQJA42EP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix designs and manufactures discrete semiconductors including MOSFETs, diodes, and optoelectronics, with emphasis on high-reliability power and signal components for automotive, industrial, and computing markets.
SQJA42EP-T1_GE3 belongs to Vishay's TrenchFET® automotive MOSFET product line, engineered specifically for under-hood power switching applications demanding AEC-Q101 qualification, high-temperature operation, and robust avalanche performance.
FAQ
What is the maximum junction temperature rating for SQJA42EP-T1_GE3?
The SQJA42EP-T1_GE3 has a specified operating junction temperature range of −55 °C to +175 °C. This rating is validated per AEC-Q101 stress test conditions and supports deployment in high-heat environments such as engine compartments. The device's RthJC of 5.5 °C/W enables effective thermal management when mounted on properly designed PCBs with adequate copper area.
Is SQJA42EP-T1_GE3 qualified to AEC-Q101 standards?
Yes, SQJA42EP-T1_GE3 is fully AEC-Q101 qualified. This includes stress testing for temperature cycling, high-temperature operating life, unbiased highly accelerated stress test (uHAST), and mechanical shock. Qualification documentation is available from Vishay upon request and is referenced in the official datasheet revision S19-0024-Rev. B.
What is the gate threshold voltage range for SQJA42EP-T1_GE3?
The gate-source threshold voltage (VGS(th)) for SQJA42EP-T1_GE3 is specified as 1.3 V (min), 1.8 V (typ), and 2.3 V (max) at VDS = VGS and ID = 250 μA. This low-threshold range ensures reliable turn-on with 3.3 V or 5 V logic-level gate drivers commonly used in automotive microcontrollers.
Does SQJA42EP-T1_GE3 include integrated ESD protection?
No, SQJA42EP-T1_GE3 does not feature integrated ESD protection circuitry. It relies on external layout practices and system-level protection (e.g., TVS diodes) for ESD robustness. The device's gate oxide is rated for ±20 V VGS, and handling must follow JEDEC J-STD-020 moisture sensitivity and ESD control guidelines.
What is the recommended PCB pad layout for the PowerPAK SO-8L package of SQJA42EP-T1_GE3?
Vishay recommends using the minimum pad pattern documented in datasheet 63818: a 5.00 mm × 2.31 mm exposed drain pad with 0.51 mm wide source pads and 0.595 mm wide gate pad. Thermal vias under the drain pad (≥6×0.3 mm) are strongly advised to achieve the rated RthJC of 5.5 °C/W and prevent localized overheating during sustained 20 A operation.
SQJA42EP-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 9.4mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:
- 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 33 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1700 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 27W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJA42EP-T1_GE3 FAQ
1.How can I place an order for SQJA42EP-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJA42EP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJA42EP-T1_GE3 reliable?
The price and inventory of SQJA42EP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJA42EP-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJA42EP-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJA42EP-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJA42EP-T1_GE3?
SQJA42EP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJA42EP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJA42EP-T1_GE3?
For technical support, including SQJA42EP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJA42EP-T1_GE3 requirements.
6.How does Aetrix verify that SQJA42EP-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJA42EP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJA42EP-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJA42EP-T1_GE3?
All SQJA42EP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJA42EP-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJA42EP-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJA42EP-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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