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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQJA46EP-T1_GE3

Name: SQJA46EP-T1_GE3
Brand: Vishay Siliconix
SKU: SQJA46EP-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQJA46EP-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SQJA46EP-T1_GE3.pdf

Description:: MOSFET N-CH 40V 60A PPAK SO-8

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Product details

Overview

SQJA46EP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET with 40 V V_DS, 3.0 mΩ R_DS(on) at V_GS = 10 V, and 60 A continuous drain current at T_C = 25 °C, designed for high-efficiency 12 V automotive power distribution and motor control circuits.

For engineers reviewing the SQJA46EP-T1_GE3 datasheet, SQJA46EP-T1_GE3 pinout, SQJA46EP-T1_GE3 application, or SQJA46EP-T1_GE3 equivalent, this device offers AEC-Q101 qualification, 175 °C junction temperature rating, and PowerPAK SO-8L leadless package optimized for thermally demanding under-hood environments.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with Q_g = 67 nC (typ.) and t_f = 15–25 ns. Its gate threshold voltage is tightly specified at 2.5–3.5 V, enabling robust drive compatibility with standard 3.3 V and 5 V logic controllers.

The device integrates a body diode with V_SD = 0.81–1.20 V at I_F = 15 A and supports repetitive avalanche energy of E_AS = 101 mJ, making it suitable for inductive load switching with inherent fault tolerance.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum drain-source blocking voltage for 12 V automotive systems with load dump margin
R_DS(on) @ V_GS = 10 V	3.0 mΩ (max) - Enables <1 W conduction loss at 60 A, critical for high-current power switches
I_D Continuous	60 A @ T_C = 25 °C - Supports high-power solenoid, pump, and fan drivers without external heatsinking
Junction Temp Range	−55 to +175 °C - Qualified for engine bay and transmission control module placement
R_thJC	2.2 °C/W - Low thermal resistance enables efficient heat transfer to PCB copper or heatsink
Q_g	67 nC (typ.) - Optimized gate charge for fast turn-on with moderate driver strength (e.g., TC4427)
AEC-Q101	Qualified - Meets stress test requirements for automotive electronic components per Rev. D

Pinout & Package

Package: PowerPAK® SO-8L (leadless), 5.13 mm × 6.15 mm footprint, exposed drain pad on bottom for thermal conduction. Compliant with IPC-7351B SOIC-8 variant land pattern.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 7, 8	Source (S)	Common source terminals tied internally; provide low-inductance return path and thermal conduction to PCB
5	Gate (G)	Control input; requires <0.75 Ω gate resistance (R_g) for optimal switching and EMI control
6	Drain (D)	Main power output terminal; connected to exposed copper pad on package underside for thermal dissipation

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers industry-leading R_DS(on) × area efficiency for compact high-current switch designs
100 % R_g and UIS tested	Ensures gate robustness and unclamped inductive switching reliability in real-world motor loads
Exposed drain thermal pad	Enables direct thermal coupling to inner-layer copper planes, reducing R_thJA to 68 °C/W (PCB mount)
Body diode with low V_SD	0.81 V (typ.) forward drop improves freewheeling efficiency in H-bridge and buck converter topologies
Leadless PowerPAK SO-8L	Eliminates gull-wing leads to reduce parasitic inductance and improve high-frequency switching stability

Applications

Engine Start/Stop Control	Electric Power Steering (EPS)
Use Scenario: High-side switching of starter relay coil and solenoid actuation during automatic engine restart. IC Role / Device Role / Timing Role: N-channel MOSFET used as low-loss, high-reliability power switch controlled by microcontroller GPIO. Use Value: 175 °C rating ensures operation during extended hot-soak conditions; 60 A rating handles peak inrush currents up to 150 A (pulsed).	Use Scenario: Bidirectional motor phase switching in 3-phase EPS inverter bridge arms. IC Role / Device Role / Timing Role: Low-R_DS(on) N-channel MOSFET in half-bridge configuration for torque assist motor drive. Use Value: 3.0 mΩ R_DS(on) minimizes conduction losses at 40–50 A RMS, improving system efficiency and thermal margin.
Transmission Valve Control	Body Control Module (BCM) Load Switching
Use Scenario: PWM-controlled proportional solenoid valves regulating hydraulic pressure in automatic transmissions. IC Role / Device Role / Timing Role: High-speed switching element driven by dedicated gate driver IC with precise duty-cycle control. Use Value: Fast t_f = 15–25 ns and low Q_gd = 9 nC enable clean PWM edges and reduced switching loss at 20–100 kHz frequencies.	Use Scenario: Centralized power distribution for lighting, HVAC actuators, and window lift motors in BCM subsystems. IC Role / Device Role / Timing Role: Single N-channel load switch replacing mechanical relays for improved lifetime and noise immunity. Use Value: AEC-Q101 qualification and −55 to +175 °C operation guarantee long-term reliability across vehicle lifecycle and environmental extremes.

Engine Start/Stop Control

Electric Power Steering (EPS)

Use Scenario: High-side switching of starter relay coil and solenoid actuation during automatic engine restart.

IC Role / Device Role / Timing Role: N-channel MOSFET used as low-loss, high-reliability power switch controlled by microcontroller GPIO.

Use Value: 175 °C rating ensures operation during extended hot-soak conditions; 60 A rating handles peak inrush currents up to 150 A (pulsed).

Use Scenario: Bidirectional motor phase switching in 3-phase EPS inverter bridge arms.

IC Role / Device Role / Timing Role: Low-R_DS(on) N-channel MOSFET in half-bridge configuration for torque assist motor drive.

Use Value: 3.0 mΩ R_DS(on) minimizes conduction losses at 40–50 A RMS, improving system efficiency and thermal margin.

Transmission Valve Control

Body Control Module (BCM) Load Switching

Use Scenario: PWM-controlled proportional solenoid valves regulating hydraulic pressure in automatic transmissions.

IC Role / Device Role / Timing Role: High-speed switching element driven by dedicated gate driver IC with precise duty-cycle control.

Use Value: Fast t_f = 15–25 ns and low Q_gd = 9 nC enable clean PWM edges and reduced switching loss at 20–100 kHz frequencies.

Use Scenario: Centralized power distribution for lighting, HVAC actuators, and window lift motors in BCM subsystems.

IC Role / Device Role / Timing Role: Single N-channel load switch replacing mechanical relays for improved lifetime and noise immunity.

Use Value: AEC-Q101 qualification and −55 to +175 °C operation guarantee long-term reliability across vehicle lifecycle and environmental extremes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL8721PBF	R_DS(on) = 3.2 mΩ (max) at V_GS = 10 V; TO-220AB package; no AEC-Q101 qualification	Requires heatsink; not approved for automotive safety-critical modules	Select only for non-automotive industrial use where qualification is not required
STL220N4F7AG	R_DS(on) = 2.4 mΩ (typ.) but rated at 40 V with 150 A pulsed current; PowerFLAT 5x6 package; AEC-Q101 qualified	Higher current capability and smaller footprint, but higher gate charge (Q_g = 110 nC)	Prefer when board space is constrained and driver can support higher Q_g; verify layout thermal relief

Compared with SQJA46EP-T1_GE3, IRL8721PBF lacks automotive qualification and thermal performance, while STL220N4F7AG offers lower R_DS(on) and smaller size but demands stronger gate drive and tighter layout control.

Availability

SQJA46EP-T1_GE3 is available at Aetrix Electronics and suitable for automotive power distribution, electric power steering, and transmission control applications requiring stable component supply and full AEC-Q101 compliance.

Supply support for SQJA46EP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQJA46EP-T1_GE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-current, high-temperature switching in engine control units and chassis electronics.

FAQ

What is the maximum continuous drain current rating for SQJA46EP-T1_GE3 at 125 °C case temperature?

The SQJA46EP-T1_GE3 maintains a continuous drain current rating of 60 A even at T_C = 125 °C, as confirmed in the Absolute Maximum Ratings table. This reflects its robust thermal design and 175 °C junction rating, enabling sustained operation in high-ambient under-hood environments without derating.

Does SQJA46EP-T1_GE3 support gate drive from a 3.3 V microcontroller without level shifting?

No - SQJA46EP-T1_GE3 has a gate threshold voltage range of 2.5–3.5 V and requires V_GS ≥ 10 V for full enhancement and specified R_DS(on). Driving directly from a 3.3 V MCU will result in partial turn-on and excessive conduction loss; a gate driver (e.g., TC4427) or level shifter is required for reliable operation.

Is the PowerPAK SO-8L package of SQJA46EP-T1_GE3 compatible with standard SO-8 reflow profiles?

Yes - SQJA46EP-T1_GE3 follows JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) and is rated for peak reflow temperatures up to 260 °C. However, due to its leadless construction, solder fillet formation at the exposed copper tip is not guaranteed; bottom-side solder joint integrity must be verified via X-ray or cross-section analysis.

What is the single-pulse avalanche energy rating for SQJA46EP-T1_GE3, and how is it validated?

The SQJA46EP-T1_GE3 is rated for 101 mJ single-pulse avalanche energy (E_AS) with L = 0.1 mH, as measured per JEDEC standard JESD24-1. This rating is validated through 100 % UIS (unclamped inductive switching) testing during production, ensuring robustness against inductive kickback in motor and solenoid applications.

How does the R_DS(on) of SQJA46EP-T1_GE3 change over temperature, and what is its value at 175 °C junction temperature?

At V_GS = 10 V and I_D = 10 A, the R_DS(on) of SQJA46EP-T1_GE3 increases to 5.2 mΩ (max) at T_J = 175 °C, per the specifications table. This 73 % increase over room-temperature value (3.0 mΩ) is typical for silicon MOSFETs and must be accounted for in worst-case thermal design of SQJA46EP-T1_GE3 circuits.

SQJA46EP-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 105 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5000 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 68W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SQJA46EP-T1_GE3 FAQ

1.How can I place an order for SQJA46EP-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQJA46EP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQJA46EP-T1_GE3 reliable?

The price and inventory of SQJA46EP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJA46EP-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQJA46EP-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJA46EP-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQJA46EP-T1_GE3?

SQJA46EP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQJA46EP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQJA46EP-T1_GE3?

For technical support, including SQJA46EP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJA46EP-T1_GE3 requirements.

6.How does Aetrix verify that SQJA46EP-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQJA46EP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJA46EP-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQJA46EP-T1_GE3?

All SQJA46EP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJA46EP-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQJA46EP-T1_GE3 part is unused and in its original packaging.

Return procedure for SQJA46EP-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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