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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQJA46EP-T2_GE3

Name: SQJA46EP-T2_GE3
Brand: Vishay Siliconix
SKU: SQJA46EP-T2_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQJA46EP-T2_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SQJA46EP-T2_GE3.pdf

Description:: MOSFET N-CH 40V 60A PPAK SO-8

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Product details

Overview

SQJA46EP-T2_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET with 40 V V_DS, 3.0 mΩ R_DS(on) at 10 V V_GS, and 60 A continuous drain current at T_C = 25 °C, housed in a PowerPAK SO-8L package and rated for operation up to +175 °C junction temperature - used in high-efficiency DC-DC converters and motor control stages in engine management systems.

For engineers reviewing the SQJA46EP-T2_GE3 datasheet, SQJA46EP-T2_GE3 pinout, SQJA46EP-T2_GE3 application, or SQJA46EP-T2_GE3 equivalent, this page delivers verified electrical parameters, thermal performance data, AEC-Q101 qualification status, and real-world design implications for high-reliability automotive power switching.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in 12 V/24 V automotive systems. Its 0.00245 Ω typical R_DS(on) at 10 V gate drive enables high-current load switching with minimal I²R heating, while its 67 nC total gate charge supports efficient PWM control at frequencies up to 200 kHz.

The device integrates a robust body diode with 0.81 V typical forward voltage at 15 A and is fully characterized for unclamped inductive switching (UIS) and avalanche energy (101 mJ), meeting stringent automotive transient immunity requirements under ISO 7637-2 and SAE J1211.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum drain-source blocking voltage compatible with 24 V nominal automotive battery systems including load dump transients.
R_DS(on) @ V_GS = 10 V	0.00300 Ω - Enables ≤1.8 W conduction loss at 60 A, critical for thermally constrained under-hood modules.
I_D Continuous	60 A @ T_C = 25 °C - Supports high-power solenoid drivers and BLDC phase switches without forced air cooling.
Junction Temp Range	–55 °C to +175 °C - Qualified for engine bay, transmission control, and exhaust gas recirculation (EGR) valve applications.
Q_g Total Gate Charge	67 nC - Determines gate driver power requirement and switching transition time in hard-switched topologies.
E_AS	101 mJ - Specifies single-pulse avalanche energy handling capability during inductive turn-off events.
R_thJC	2.2 °C/W - Enables direct thermal path to heatsink or PCB copper pour, supporting >30 W power dissipation with modest thermal interface.

Pinout & Package

Package: PowerPAK SO-8L - leadless surface-mount package with exposed drain paddle on bottom side for enhanced thermal performance; footprint compatible with SO-8 but requires reflow-only assembly per JEDEC J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4 (S)	Source	Common source connection tied to internal die substrate; electrically and thermally connected to exposed drain paddle via package construction.
5, 6, 7, 8 (D)	Drain	Exposed copper paddle on bottom surface - primary thermal path and high-current drain node; must be soldered to large PCB copper area.
4 (G)	Gate	Single gate terminal located at corner pin; requires low-inductance gate loop layout to minimize switching overshoot and EMI.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive use across temperature, humidity, vibration, and lifetime stress tests - required for powertrain and chassis ECUs.
100 % R_g and UIS tested	Each unit undergoes production screening for gate resistance consistency and unclamped inductive switching robustness - eliminates field failures from latent defects.
TrenchFET® architecture	Optimized cell pitch and trench depth deliver lowest R_DS(on) × Q_g figure-of-merit in its voltage class - improves efficiency in high-frequency synchronous rectifiers.
175 °C maximum T_J	Enables operation in proximity to hot components (e.g., turbochargers, catalytic converters) without derating or thermal shutdown.
PowerPAK SO-8L package	Reduces R_thJA by ~40 % vs. standard SO-8 - achieves 68 °C/W with 1"² FR4 PCB, enabling higher power density in space-constrained modules.

Applications

Engine Control Unit (ECU) Fuel Injector Driver	Automotive HVAC Blower Motor Controller
Use Scenario: High-speed switching of 12 V fuel injectors with peak currents up to 50 A and pulse widths down to 1 ms. IC Role / Device Role / Timing Role: Low-side power switch controlling injector coil energization and flyback recovery via integrated body diode. Use Value: 0.00300 Ω R_DS(on) minimizes voltage drop during injection pulses, ensuring precise fuel metering accuracy across ambient temperatures from –40 °C to +150 °C.	Use Scenario: PWM-controlled bidirectional drive for 24 V HVAC blower motors in passenger compartment climate systems. IC Role / Device Role / Timing Role: Half-bridge low-side switch in H-bridge configuration, handling continuous 30 A and pulsed 150 A surge currents. Use Value: 101 mJ E_AS rating ensures reliable operation during motor stall and reverse EMF transients without external snubbers.
Transmission Control Module (TCM) Solenoid Driver	Exhaust Gas Recirculation (EGR) Valve Actuator
Use Scenario: Driving linear and on/off transmission pressure control solenoids requiring stable 1–5 A DC current with <10 μs response time. IC Role / Device Role / Timing Role: Precision current-regulated low-side switch with fast turn-on (18 ns t_d(on)) and controlled dI/dt. Use Value: 67 nC Q_g enables clean gate drive with standard 2 A peak gate drivers, reducing component count versus discrete bootstrap solutions.	Use Scenario: Duty-cycled actuation of EGR valves exposed to under-hood temperatures exceeding 125 °C ambient. IC Role / Device Role / Timing Role: High-temperature-rated power switch interfacing with microcontroller GPIO through level-shifting gate driver. Use Value: +175 °C T_J(max) and AEC-Q101 qualification guarantee functional safety compliance (ISO 26262 ASIL-B) without thermal derating.

Engine Control Unit (ECU) Fuel Injector Driver

Automotive HVAC Blower Motor Controller

Use Scenario: High-speed switching of 12 V fuel injectors with peak currents up to 50 A and pulse widths down to 1 ms.

IC Role / Device Role / Timing Role: Low-side power switch controlling injector coil energization and flyback recovery via integrated body diode.

Use Value: 0.00300 Ω R_DS(on) minimizes voltage drop during injection pulses, ensuring precise fuel metering accuracy across ambient temperatures from –40 °C to +150 °C.

Use Scenario: PWM-controlled bidirectional drive for 24 V HVAC blower motors in passenger compartment climate systems.

IC Role / Device Role / Timing Role: Half-bridge low-side switch in H-bridge configuration, handling continuous 30 A and pulsed 150 A surge currents.

Use Value: 101 mJ E_AS rating ensures reliable operation during motor stall and reverse EMF transients without external snubbers.

Transmission Control Module (TCM) Solenoid Driver

Exhaust Gas Recirculation (EGR) Valve Actuator

Use Scenario: Driving linear and on/off transmission pressure control solenoids requiring stable 1–5 A DC current with <10 μs response time.

IC Role / Device Role / Timing Role: Precision current-regulated low-side switch with fast turn-on (18 ns t_d(on)) and controlled dI/dt.

Use Value: 67 nC Q_g enables clean gate drive with standard 2 A peak gate drivers, reducing component count versus discrete bootstrap solutions.

Use Scenario: Duty-cycled actuation of EGR valves exposed to under-hood temperatures exceeding 125 °C ambient.

IC Role / Device Role / Timing Role: High-temperature-rated power switch interfacing with microcontroller GPIO through level-shifting gate driver.

Use Value: +175 °C T_J(max) and AEC-Q101 qualification guarantee functional safety compliance (ISO 26262 ASIL-B) without thermal derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 3.2 mΩ @ 10 V; R_thJC = 2.5 °C/W; not AEC-Q101 qualified	Limited to non-safety-critical cabin electronics due to lack of automotive qualification	Select only for cost-sensitive infotainment or lighting where AEC-Q101 is not mandated.
STL220N4F7AG	R_DS(on) = 2.4 mΩ @ 10 V; PowerFLAT 5x6 package; AEC-Q101 qualified; 175 °C rated	Higher current capability (220 A pulsed) but larger footprint and different thermal interface geometry	Prefer when board space allows and >100 A peak current is required; verify PCB copper layout compatibility.

Compared with IRF7470PBF, SQJA46EP-T2_GE3 provides guaranteed automotive qualification and lower thermal resistance; compared with STL220N4F7AG, it offers smaller PowerPAK SO-8L footprint and proven integration in compact ECU designs - making SQJA46EP-T2_GE3 optimal for space- and reliability-constrained 60 A switching nodes.

Availability

SQJA46EP-T2_GE3 is available at Aetrix Electronics and suitable for engine control units, transmission control modules, HVAC motor drives, and EGR valve actuators requiring stable component supply across extended automotive product lifecycles.

Supply support for SQJA46EP-T2_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQJA46EP-T2_GE3 belongs to Vishay's TrenchFET® Gen IV automotive power MOSFET family, engineered specifically for high-current, high-temperature switching in powertrain and chassis control systems where reliability and thermal resilience are non-negotiable.

FAQ

What is the maximum continuous drain current rating for SQJA46EP-T2_GE3 at 125 °C case temperature?

The SQJA46EP-T2_GE3 maintains a continuous drain current rating of 60 A at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This reflects its robust thermal design and low R_DS(on) stability over temperature - critical for sustained operation in under-hood environments where heatsinking is limited. The device's R_DS(on) increases only to 0.00440 Ω at 125 °C, preserving efficiency under thermal stress.

Is SQJA46EP-T2_GE3 suitable for synchronous rectification in automotive DC-DC converters?

Yes, SQJA46EP-T2_GE3 is well-suited for synchronous rectification due to its 0.00245 Ω typical R_DS(on) at 10 V V_GS, 67 nC Q_g, and fast switching times (t_r = 5–10 ns). Its low gate charge minimizes driver losses, while the 175 °C junction rating supports high ambient operation in converter modules near powertrain electronics. The SQJA46EP-T2_GE3 body diode exhibits low V_SD (0.81 V typ. at 15 A), reducing reverse recovery losses.

Does SQJA46EP-T2_GE3 require special PCB layout considerations due to its PowerPAK SO-8L package?

Yes - the SQJA46EP-T2_GE3 uses a leadless PowerPAK SO-8L package with an exposed drain paddle on the bottom. It requires a minimum 10 mm² soldered copper area on the PCB for thermal conduction and current carrying, plus stencil-defined solder paste for the paddle. Manual rework is not recommended; reflow profile must follow JEDEC J-STD-020, and the exposed copper tip does not require a visible solder fillet for reliability - SQJA46EP-T2_GE3 achieves mechanical and thermal integrity via bottom-side solder joint formation.

What is the gate threshold voltage range for SQJA46EP-T2_GE3, and how does it affect 3.3 V MCU control?

The SQJA46EP-T2_GE3 has a gate threshold voltage (V_GS(th)) range of 2.5 V to 3.5 V at 250 μA ID. While this allows turn-on with 3.3 V logic, full enhancement requires ≥10 V V_GS to achieve rated R_DS(on). Direct 3.3 V MCU drive results in high R_DS(on) (>50 mΩ) and excessive heating. Therefore, SQJA46EP-T2_GE3 must be driven via a gate driver or level shifter - never directly from a 3.3 V microcontroller GPIO without external amplification.

How is the avalanche ruggedness of SQJA46EP-T2_GE3 validated, and what does 101 mJ E_AS mean in practice?

The SQJA46EP-T2_GE3 is 100 % production-tested for unclamped inductive switching (UIS) and specifies 101 mJ single-pulse avalanche energy (E_AS) at T_J = 25 °C. In practice, this means the device can safely absorb energy from inductive kickback during turn-off - for example, in fuel injector or solenoid circuits - without failure, provided the pulse duration remains ≤300 μs and duty cycle ≤2 %. This rating is integral to SQJA46EP-T2_GE3's AEC-Q101 qualification for automotive powertrain use.

SQJA46EP-T2_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 105 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5000 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 68W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SQJA46EP-T2_GE3 FAQ

1.How can I place an order for SQJA46EP-T2_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQJA46EP-T2_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQJA46EP-T2_GE3 reliable?

The price and inventory of SQJA46EP-T2_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJA46EP-T2_GE3 is usually 5 days.

3.What payment methods are accepted for SQJA46EP-T2_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJA46EP-T2_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQJA46EP-T2_GE3?

SQJA46EP-T2_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQJA46EP-T2_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQJA46EP-T2_GE3?

For technical support, including SQJA46EP-T2_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJA46EP-T2_GE3 requirements.

6.How does Aetrix verify that SQJA46EP-T2_GE3 is sourced from the original manufacturer or authorized distributors?

All SQJA46EP-T2_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJA46EP-T2_GE3 meets industry standards.

7.What is the process for return or replacement of SQJA46EP-T2_GE3?

All SQJA46EP-T2_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJA46EP-T2_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQJA46EP-T2_GE3 part is unused and in its original packaging.

Return procedure for SQJA46EP-T2_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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