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Vishay Siliconix SQJA66EP-T1_GE3
- Part No.:
- SQJA66EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJA66EP-T1_GE3.pdf
- Description:
- AUTOMOTIVE N-CHANNEL 60 V (D-S)
- Quantity:
- Payment:
- Shipping:
Inventory:2,816
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Product details
Overview
SQJA66EP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® Gen IV MOSFET rated for 60 V drain-source voltage, 75 A continuous drain current at 25 °C, and 0.0030 Ω RDS(on) at VGS = 10 V. It serves as a high-efficiency main power switch in 48 V mild-hybrid DC/DC converters and battery disconnect circuits operating up to +175 °C junction temperature.
For engineers reviewing the SQJA66EP-T1_GE3 datasheet, SQJA66EP-T1_GE3 pinout, SQJA66EP-T1_GE3 application, or SQJA66EP-T1_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, 100 % Rg and UIS tested reliability, low gate charge (64.9 nC typ), and PowerPAK® SO-8L package thermal performance (RthJC = 2.2 °C/W).
Technical Context
This MOSFET employs a trench-based silicon structure optimized for low conduction loss and fast switching in high-current automotive power stages. Its gate threshold voltage (2.3–3.3 V) enables robust drive compatibility with standard 3.3 V and 5 V microcontrollers, while the 0.52 Ω typical gate resistance supports controlled turn-on/turn-off timing without external gate resistors in many designs.
The device integrates a body diode with 0.8–1.2 V forward voltage at 10 A and 56–110 ns reverse recovery time, making it suitable for synchronous rectification and freewheeling in buck and half-bridge topologies. Thermal design is enabled by its 2.2 °C/W junction-to-case resistance and validated 175 °C maximum junction temperature rating.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage for 48 V system bus protection and DC/DC primary-side switching |
| RDS(on) @ VGS = 10 V | 0.0030 Ω - Enables ≤2.3 W conduction loss at 75 A, critical for thermally constrained under-hood modules |
| ID (continuous, TC = 25 °C) | 75 A - Supports high-current load switching in starter-alternator control and battery management systems |
| Qg (total gate charge) | 64.9 nC typ - Reduces gate driver power demand and switching losses in 100–300 kHz power converters |
| RthJC | 2.2 °C/W - Allows direct heatsinking via exposed drain pad, enabling compact thermal solutions on FR4 PCBs |
| TJ max | +175 °C - Qualified for engine bay and transmission control unit environments per AEC-Q101 |
| EAS | 39.2 mJ - Withstands single-pulse avalanche energy during load dump or inductive turn-off events |
Pinout & Package
Package: PowerPAK® SO-8L (single configuration), 5.13 mm × 6.15 mm footprint, 1.07 mm height, with exposed drain pad on bottom side for thermal and electrical connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 5 | Source (S) | Four parallel source terminals reduce parasitic inductance and improve current sharing in high-di/dt applications |
| 4 | Gate (G) | Single gate input with 0.52 Ω typical internal resistance; compatible with standard logic-level drivers |
| 6, 7, 8 | Drain (D) | Three drain terminals connected to exposed copper pad - primary thermal path and high-current return path |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive powertrain and chassis applications including temperature cycling, HTRB, and UIS stress tests |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency and unclamped inductive switching robustness - no field failures due to latent gate defects |
| TrenchFET® Gen IV process | Optimized cell pitch and trench depth deliver 20 % lower RDS(on) × Qg figure-of-merit vs. prior generation |
| Exposed drain thermal pad | Enables <2.5 °C/W total thermal resistance when soldered to 1"² 2 oz. copper area - eliminates need for external heatsink |
| Body diode with low Qrr | 61–125 nC reverse recovery charge reduces switching loss and EMI in synchronous rectifier operation |
Applications
| 48 V Mild-Hybrid DC/DC Converter | Battery Disconnect Switch |
|---|---|
Use Scenario: Step-down conversion from 48 V bus to 12 V auxiliary supply in P0/P1 hybrid architectures. IC Role / Device Role / Timing Role: Primary-side high-side synchronous rectifier MOSFET operating at 200 kHz with forced-air cooling. Use Value: 0.0030 Ω RDS(on) limits conduction loss to <2.3 W at full load, enabling >96 % efficiency at 10 kW output. |
Use Scenario: High-reliability isolation between traction battery and 48 V subsystem during fault conditions. IC Role / Device Role / Timing Role: Normally-open power switch controlled by ASIL-B safety controller with redundant monitoring. Use Value: AEC-Q101 qualification and 39.2 mJ EAS ensure fail-safe disconnection under short-circuit and load-dump transients. |
| Engine Control Unit Load Driver | Electric Power Steering Motor Driver |
Use Scenario: Driving high-current solenoids and fuel injectors in gasoline direct injection systems. IC Role / Device Role / Timing Role: Low-side switch with PWM-controlled duty cycle and active freewheeling via integrated body diode. Use Value: 56–110 ns trr and 0.8–1.2 V VSD minimize voltage overshoot and heat generation during inductive turn-off. |
Use Scenario: Half-bridge leg in 3-phase motor inverter for column-assist EPS systems. IC Role / Device Role / Timing Role: High-current phase-leg switch handling peak currents >60 A with 175 °C junction capability. Use Value: +175 °C TJ max and 2.2 °C/W RthJC allow sustained operation in sealed EPS housing without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60 V automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | Higher RDS(on) (4.5 mΩ), larger SO-8 package (no exposed drain), non-AEC-Q101 | Limited to underhood ambient <125 °C; unsuitable for ASIL-relevant safety functions | Select only for cost-sensitive non-automotive industrial DC/DC where thermal margin exceeds 30 °C |
| STL220N6F7 | Same 60 V rating, lower Qg (55 nC), but higher RDS(on) (3.8 mΩ) and no 100 % UIS test | Approved for 150 °C ambient but lacks full AEC-Q101 stress validation for powertrain use | Acceptable for ADAS camera power supplies where transient immunity is less critical than efficiency |
Compared with IRF7470PBF and STL220N6F7, SQJA66EP-T1_GE3 delivers superior thermal performance (2.2 °C/W vs. ≥3.5 °C/W), guaranteed UIS robustness, and full AEC-Q101 compliance - making it the only choice for ASIL-B/C battery disconnect and 48 V converter primary switches.
Availability
SQJA66EP-T1_GE3 is available at Aetrix Electronics and suitable for 48 V mild-hybrid DC/DC converters, automotive battery disconnect systems, and electric power steering motor drivers requiring stable component supply across extended production lifecycles.
Supply support for SQJA66EP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJA66EP-T1_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-current, high-temperature power switching in next-generation 48 V vehicle architectures.
FAQ
What is the maximum continuous drain current rating for SQJA66EP-T1_GE3 at 125 °C case temperature?
The SQJA66EP-T1_GE3 supports 56 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK® SO-8L package and ensures reliable operation in high-ambient under-hood environments. The 75 A rating applies only at TC = 25 °C.
Does SQJA66EP-T1_GE3 have an integrated Schottky body diode?
No, SQJA66EP-T1_GE3 uses a standard silicon body diode inherent to its N-channel MOSFET structure. Its forward voltage is 0.8–1.2 V at 10 A and reverse recovery time is 56–110 ns - characteristics confirmed in the datasheet's Source-Drain Diode Ratings section. It is not a Schottky or trench-Schottky hybrid device.
Is SQJA66EP-T1_GE3 pin-compatible with standard SO-8 packages?
No, SQJA66EP-T1_GE3 uses the PowerPAK® SO-8L package, which has a different pin layout and an exposed drain pad on the bottom. Unlike standard SO-8, pins 1–3 and 5 are sources, pin 4 is gate, and pins 6–8 are drains - requiring dedicated PCB layout and thermal pad design per Vishay document 63818.
What does "100 % Rg and UIS tested" mean for SQJA66EP-T1_GE3?
"100 % Rg and UIS tested" means every SQJA66EP-T1_GE3 unit undergoes production screening for gate resistance (0.25–0.80 Ω) and unclamped inductive switching (28 A single-pulse avalanche current, 39.2 mJ energy). This ensures consistent switching behavior and guaranteed ruggedness against inductive turn-off transients in automotive power stages.
Can SQJA66EP-T1_GE3 be used in synchronous rectification topologies?
Yes, SQJA66EP-T1_GE3 is suitable for synchronous rectification due to its low RDS(on) (0.0030 Ω), fast body diode (trr = 56–110 ns), and low Qrr (61–125 nC). Its gate threshold (2.3–3.3 V) allows reliable turn-on with standard gate drivers, and its AEC-Q101 qualification supports use in automotive DC/DC secondary-side switches.
SQJA66EP-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 3.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 98 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5400 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 68W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJA66EP-T1_GE3 FAQ
1.How can I place an order for SQJA66EP-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJA66EP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJA66EP-T1_GE3 reliable?
The price and inventory of SQJA66EP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJA66EP-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJA66EP-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJA66EP-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJA66EP-T1_GE3?
SQJA66EP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJA66EP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJA66EP-T1_GE3?
For technical support, including SQJA66EP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJA66EP-T1_GE3 requirements.
6.How does Aetrix verify that SQJA66EP-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJA66EP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJA66EP-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJA66EP-T1_GE3?
All SQJA66EP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJA66EP-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJA66EP-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJA66EP-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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