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Vishay Siliconix SQJA68EP-T1_BE3
- Part No.:
- SQJA68EP-T1_BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJA68EP-T1_BE3.pdf
- Description:
- N-CHANNEL 100-V (D-S) 175C MOSFE
- Quantity:
- Payment:
- Shipping:
Inventory:2,196
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Product details
Overview
SQJA68EP-T1_BE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 100 V drain-source voltage, 14 A continuous drain current at 25 °C, and 0.092 Ω RDS(on) at VGS = 10 V. It serves as a high-efficiency main or synchronous rectifier switch in 12 V/24 V automotive power systems including DC-DC converters and motor drivers.
For engineers reviewing the SQJA68EP-T1_BE3 datasheet, SQJA68EP-T1_BE3 pinout, SQJA68EP-T1_BE3 application, or SQJA68EP-T1_BE3 equivalent, key selection criteria include its AEC-Q101 qualification, 175 °C maximum junction temperature, PowerPAK® SO-8L leadless package thermal performance (RthJC = 3.3 °C/W), and robust UIS/100 % Rg testing for automotive reliability validation.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in high-temperature automotive environments. Its gate threshold voltage (1.5–2.5 V) enables compatibility with 3.3 V and 5 V logic-level controllers, while the 4.7 nC typical total gate charge supports efficient PWM operation up to several hundred kHz.
The device integrates a body diode with 29–60 ns reverse recovery time and 27–55 nC Qrr, enabling use in freewheeling and synchronous rectification roles without external diodes. Thermal design is supported by validated junction-to-case (3.3 °C/W) and PCB-mounted junction-to-ambient (70 °C/W) resistance values under defined FR4 board conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Withstands full load transients in 24 V automotive systems without breakdown |
| RDS(on) @ VGS = 10 V | 0.092 Ω - Delivers ≤ 1.8 W conduction loss at 14 A, reducing thermal stress in compact layouts |
| ID (continuous) | 14 A @ TC = 25 °C - Supports high-current loads such as radiator fan or HVAC blower drivers |
| Junction temp. range | −55 to +175 °C - Certified for under-hood operation per AEC-Q101, eliminating derating concerns at 150 °C ambient |
| Qg (total) | 4.7 nC typ. - Enables low drive-power switching with standard gate drivers (e.g., UCC27531) at 200–500 kHz |
| RthJC | 3.3 °C/W - Allows direct heatsinking via exposed drain pad, supporting >30 W power dissipation with minimal ΔT |
| Body diode VSD | 0.88 V typ. @ IF = 4 A - Reduces freewheeling loss vs. discrete Schottky solutions in buck converters |
Pinout & Package
Package: PowerPAK® SO-8L (leadless, thermally enhanced surface-mount). Exposed drain pad on bottom provides primary thermal path and electrical connection to drain terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 7, 8 | Source (S) | Five parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications |
| 4 | Gate (G) | Single gate input with 2–6 Ω gate resistance - compatible with standard logic-level drivers without external gate resistor |
| 5, 6 | Drain (D) | Two drain terminals connected to large exposed copper pad - primary thermal and high-current path to PCB ground plane |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive powertrain and chassis applications requiring zero defect reliability over 15+ year service life |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency and unclamped inductive switching robustness - eliminates field failure modes |
| TrenchFET® architecture | Optimized cell pitch and trench depth deliver 22 % lower RDS(on) × Qg figure-of-merit vs. planar MOSFETs at same voltage class |
| PowerPAK SO-8L package | Thermal resistance reduced by 40 % vs. standard SO-8; 3.3 °C/W RthJC enables >2× power density in space-constrained modules |
| 175 °C max. TJ | Enables operation in high-ambient zones (e.g., near engine block) without thermal shutdown or parameter drift |
Applications
| Engine Control Unit (ECU) Load Switch | Automotive DC-DC Converter |
|---|---|
Use Scenario: High-side switching of solenoid valves and fuel injectors in gasoline/diesel ECUs. IC Role / Device Role / Timing Role: Main power switch controlling 12 V/24 V actuator supply with precise PWM timing and fast turn-off. Use Value: Low RDS(on) minimizes I²R heating during sustained 10–15 A pulses; AEC-Q101 qualification ensures immunity to vibration and thermal cycling. |
Use Scenario: Synchronous rectifier in 48 V-to-12 V bidirectional buck-boost converter for mild hybrid vehicles. IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating at 200–300 kHz with body diode commutation during dead-time. Use Value: 0.88 V VSD and 29 ns trr reduce conduction and switching losses by 35 % vs. external Schottky diode solution. |
| Electric Power Steering (EPS) Motor Driver | On-Board Charger (OBC) Auxiliary Supply |
Use Scenario: Half-bridge high-side switch in 3-phase EPS inverter driving 150–300 W brushless motors. IC Role / Device Role / Timing Role: High-voltage, high-current switching element handling 100 V bus transients and 14 A peak phase current. Use Value: 100 % UIS tested to withstand 9 A single-pulse avalanche energy - prevents failure during motor stall or short-circuit events. |
Use Scenario: Primary-side switch in auxiliary 12 V SMPS supplying control circuitry inside OBC units. IC Role / Device Role / Timing Role: Hard-switched MOSFET operating at fixed 100–200 kHz with gate drive sourced from integrated controller. Use Value: 4.7 nC Qg and 0.092 Ω RDS(on) enable >92 % efficiency at 5 A output while maintaining <65 °C case temperature. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 100 V automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL100N10F7 | Higher RDS(on) (0.11 Ω @ 10 V), lower Qg (3.8 nC), same PowerFLAT 5x6 package | Preferred for ultra-high-frequency (>1 MHz) resonant converters where switching loss dominates | Select STL100N10F7 when gate drive strength is limited and switching frequency exceeds 400 kHz |
| IRF4905PbF | TO-220 package, higher RDS(on) (0.095 Ω), no AEC-Q101 qualification, 175 °C rating retained | Suitable for non-automotive industrial power supplies where qualification is not required | Choose IRF4905PbF only for cost-sensitive non-automotive designs with adequate heatsink volume |
Compared with STL100N10F7 and IRF4905PbF, SQJA68EP-T1_BE3 delivers superior thermal performance (3.3 °C/W vs. ≥4.5 °C/W), guaranteed AEC-Q101 compliance, and lower conduction loss - making it the optimal choice for space-constrained, high-reliability automotive power stages.
Availability
SQJA68EP-T1_BE3 is available at Aetrix Electronics and suitable for automotive power conversion, electric power steering, and engine management systems requiring stable component supply across multi-year production cycles.
Supply support for SQJA68EP-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJA68EP-T1_BE3 belongs to Vishay's AEC-Q101-qualified TrenchFET® PowerPAK® SO-8L family, engineered specifically for high-efficiency, high-temperature switching in next-generation automotive electrification systems.
FAQ
What is the maximum continuous drain current rating for SQJA68EP-T1_BE3 at 125 °C case temperature?
The SQJA68EP-T1_BE3 supports 8 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK SO-8L package and ensures reliable operation in high-ambient under-hood environments without exceeding 175 °C junction temperature.
Does SQJA68EP-T1_BE3 require a gate resistor for standard automotive microcontroller drive?
Yes, SQJA68EP-T1_BE3 benefits from an external gate resistor (typically 5–10 Ω) when driven directly by automotive MCUs like Infineon Aurix or NXP S32K series. Although its intrinsic Rg is 2–6 Ω, adding a small series resistor damps ringing, controls dv/dt, and prevents shoot-through in half-bridge configurations - critical for ISO 16750-compliant EMI performance.
Is SQJA68EP-T1_BE3 pin-compatible with other PowerPAK SO-8L MOSFETs?
No, SQJA68EP-T1_BE3 is not guaranteed pin-compatible with other PowerPAK SO-8L devices. While all share the same footprint and terminal numbering (1–8), internal configuration (single N-channel with 5-source/2-drain layout) and thermal pad connectivity are specific to this part. Always verify pin function mapping using the official Vishay SQJA68EP datasheet before board reuse.
What is the body diode forward voltage of SQJA68EP-T1_BE3 at 4 A and room temperature?
The body diode forward voltage (VSD) of SQJA68EP-T1_BE3 is 0.88 V typical at IF = 4 A and TJ = 25 °C, with a maximum of 1.2 V. This low VSD reduces conduction loss during freewheeling phases in buck or flyback topologies, especially when used without an external Schottky diode.
How is thermal performance validated for SQJA68EP-T1_BE3 in real PCB layouts?
Thermal performance of SQJA68EP-T1_BE3 is validated per JEDEC standards on a 1" × 1" FR4 PCB with 2 oz. copper on both sides. The published RthJA = 70 °C/W and RthJC = 3.3 °C/W apply strictly to this test board. For custom layouts, thermal simulation or IR imaging is recommended - particularly to ensure full solder coverage on the exposed drain pad, which carries >90 % of heat flow.
SQJA68EP-T1_BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 92mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 280 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 45W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJA68EP-T1_BE3 FAQ
1.How can I place an order for SQJA68EP-T1_BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJA68EP-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJA68EP-T1_BE3 reliable?
The price and inventory of SQJA68EP-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJA68EP-T1_BE3 is usually 5 days.
3.What payment methods are accepted for SQJA68EP-T1_BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJA68EP-T1_BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJA68EP-T1_BE3?
SQJA68EP-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJA68EP-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJA68EP-T1_BE3?
For technical support, including SQJA68EP-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJA68EP-T1_BE3 requirements.
6.How does Aetrix verify that SQJA68EP-T1_BE3 is sourced from the original manufacturer or authorized distributors?
All SQJA68EP-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJA68EP-T1_BE3 meets industry standards.
7.What is the process for return or replacement of SQJA68EP-T1_BE3?
All SQJA68EP-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJA68EP-T1_BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJA68EP-T1_BE3 part is unused and in its original packaging.
Return procedure for SQJA68EP-T1_BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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