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Vishay Siliconix SQJA70EP-T1_BE3
- Part No.:
- SQJA70EP-T1_BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJA70EP-T1_BE3.pdf
- Description:
- N-CHANNEL 100-V (D-S) 175C MOSFE
- Quantity:
- Payment:
- Shipping:
Inventory:5,977
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Product details
Overview
SQJA70EP-T1_BE3 from Vishay Siliconix is an automotive-grade N-channel 100 V MOSFET in PowerPAK® SO-8L package, rated for continuous drain current of 14.7 A at 25 °C and 175 °C junction temperature, with RDS(on) = 0.095 Ω at VGS = 10 V, used in high-reliability DC-DC converters and motor control stages in engine management systems.
For engineers reviewing the SQJA70EP-T1_BE3 datasheet, SQJA70EP-T1_BE3 pinout, SQJA70EP-T1_BE3 application, or SQJA70EP-T1_BE3 equivalent, key selection criteria include AEC-Q101 qualification, 100 % Rg and UIS testing, thermal resistance RthJC = 3.3 °C/W, and body diode recovery time trr = 29–60 ns under defined conditions.
Technical Context
This MOSFET employs TrenchFET® technology to achieve low on-resistance and fast switching performance. Its gate charge profile (Qg = 4–7 nC, Qgd = 1.25 nC) supports efficient PWM operation in high-frequency power stages, while the integrated source-drain diode enables synchronous rectification or freewheeling paths without external components.
The device operates across -55 °C to +175 °C junction temperature range and features guaranteed avalanche energy rating EAS = 5 mJ. Thermal design is enabled by validated RthJC = 3.3 °C/W and RthJA = 70 °C/W (PCB mount), supporting compact thermal layout in space-constrained automotive modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum blocking voltage for 12 V/48 V automotive bus interfaces and boost converter primary switches |
| RDS(on) @ VGS = 10 V | 0.095 Ω - Enables ≤1.4 W conduction loss at 14.7 A, critical for thermal budget in sealed ECUs |
| ID (continuous) | 14.7 A @ TC = 25 °C - Supports high-current load switching in transmission control units and ADAS power domains |
| Qg | 4–7 nC - Low gate drive energy reduces controller IC loading and improves efficiency above 200 kHz switching |
| tr/tf | 5–10 ns - Fast edge rates minimize switching losses in hard-switched topologies with minimal EMI penalty |
| trr | 29–60 ns - Predictable body diode recovery supports reliable synchronous rectification in buck-derived regulators |
| RthJC | 3.3 °C/W - Enables direct thermal coupling to heatsink or copper pour, essential for >15 W power dissipation |
Pinout & Package
PowerPAK® SO-8L single-die package: 5.13 mm × 6.15 mm footprint, leadless construction with exposed drain pad on bottom side; compatible with standard SO-8 reflow profiles (peak 260 °C).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 5 | Source (S) | Four parallel source terminals reduce parasitic inductance and improve current sharing in high-di/dt applications |
| 4 | Gate (G) | Single gate input with Rg = 2.4–7.5 Ω - supports direct microcontroller drive or optimized gate driver sizing |
| 6, 7, 8 | Drain (D) | Three drain terminals connected to large exposed copper pad - primary thermal and power path to PCB ground plane |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive underhood use including temperature cycling, HTRB, and UHAST per stress test plan |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency and unclamped inductive switching robustness |
| TrenchFET® architecture | Delivers 23 % lower RDS(on) vs. planar MOSFETs at same die size, improving power density in compact modules |
| 175 °C maximum TJ | Enables operation in high-ambient environments (e.g., near turbochargers or inverters) without derating |
| Exposed drain thermal pad | Provides <1.5 °C/W additional thermal path when soldered to 1"² 2 oz. copper area per Vishay thermal model |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | 48 V Mild Hybrid DC-DC Converter |
|---|---|
Use Scenario: High-speed, high-current switching of solenoid fuel injectors in gasoline direct injection systems. IC Role / Device Role / Timing Role: Primary power switch controlling injector coil energization and demagnetization with precise pulse width modulation. Use Value: Low RDS(on) minimizes I²R heating during extended duty cycles; fast tr/tf ensures accurate sub-millisecond pulse control. | Use Scenario: Synchronous rectification in secondary-side of isolated bidirectional DC-DC converter linking 12 V and 48 V buses. IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating at 200–300 kHz with body diode conduction during dead time. Use Value: Verified trr = 29–60 ns and Qrr = 25–50 nC enable predictable reverse recovery behavior and reduced switching loss vs. discrete diodes. |
| Electric Power Steering (EPS) Motor Phase Leg | ADAS Radar Module Power Supply |
Use Scenario: Half-bridge high-side or low-side switch in three-phase inverter driving brushless EPS assist motor. IC Role / Device Role / Timing Role: Robust power switch handling 15 A peak phase current and repetitive avalanche stress during regenerative braking. Use Value: EAS = 5 mJ and IAS = 10 A support safe energy clamping during motor back-EMF transients without snubbers. | Use Scenario: Point-of-load (POL) regulator supplying stable 3.3 V/5 V to RF transceivers and DSPs in millimeter-wave radar units. IC Role / Device Role / Timing Role: High-efficiency, low-noise high-side switch in buck converter with tight thermal constraints inside sealed radar housing. Use Value: RthJC = 3.3 °C/W allows direct thermal interface to metal shield, maintaining <100 °C junction temp at full load in 105 °C ambient. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 100 V MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 0.085 Ω @ 10 V but only rated to 150 °C TJ; no AEC-Q101 qualification | Not suitable for underhood automotive use; limited to industrial or consumer power supplies | Select only if AEC-Q101 compliance is not required and thermal margin exceeds 25 °C |
| STL140N10F7 | 100 V, RDS(on) = 0.0075 Ω @ 10 V, but in TO-220FP package - larger footprint and higher RthJA = 50 °C/W | Requires heatsink mounting; incompatible with surface-mount-only PCB assembly | Choose only when higher current (>30 A) and forced-air cooling are available |
Compared with IRF7470PBF and STL140N10F7, SQJA70EP-T1_BE3 uniquely combines AEC-Q101 qualification, PowerPAK SO-8L surface-mount compatibility, and 175 °C operation-making it the only option for thermally dense, safety-critical automotive modules requiring zero layout change from legacy SO-8 footprints.
Availability
SQJA70EP-T1_BE3 is available at Aetrix Electronics and suitable for engine control units, 48 V mild hybrid converters, electric power steering systems, and ADAS radar modules requiring stable component supply across multi-year automotive production programs.
Supply support for SQJA70EP-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJA70EP-T1_BE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-temperature, high-reliability switching in engine bay and chassis-mounted electronic control units.
FAQ
What is the maximum junction temperature rating for SQJA70EP-T1_BE3?
The SQJA70EP-T1_BE3 has a specified maximum junction temperature of +175 °C, validated per AEC-Q101 stress testing. This rating enables operation in underhood environments where ambient temperatures exceed 125 °C, provided thermal design maintains TJ ≤ 175 °C using the published RthJC = 3.3 °C/W and PCB layout guidelines. The device remains fully functional and reliable up to this limit without parameter derating.
Is SQJA70EP-T1_BE3 qualified to AEC-Q101 standards?
Yes, SQJA70EP-T1_BE3 is fully AEC-Q101 qualified. Vishay's certification includes temperature cycling, high-temperature reverse bias (HTRB), unbiased highly accelerated stress test (UHAST), and mechanical shock testing per the AEC-Q101-001 standard. Documentation is available in the official qualification report referenced in datasheet S22-0380-Rev. B, confirming suitability for automotive powertrain and chassis applications.
What is the gate threshold voltage range for SQJA70EP-T1_BE3?
The gate threshold voltage VGS(th) for SQJA70EP-T1_BE3 is specified as 2.5 V (min), 3.0 V (typ), and 3.5 V (max) at VDS = VGS and ID = 250 μA. This tightly controlled range ensures consistent turn-on behavior across temperature and process variation, supporting reliable logic-level drive from 3.3 V or 5 V microcontrollers without external level shifting in automotive control modules.
Does SQJA70EP-T1_BE3 include avalanche energy rating?
Yes, SQJA70EP-T1_BE3 is rated for single-pulse avalanche energy EAS = 5 mJ and single-pulse avalanche current IAS = 10 A (L = 0.1 mH). These values are production-tested per Vishay's internal specification and documented in the Absolute Maximum Ratings table. They provide design margin for inductive load switching and transient suppression in motor drivers and solenoid controls without external protection circuits.
What is the recommended PCB pad layout for SQJA70EP-T1_BE3?
Vishay specifies a recommended minimum pad pattern for the PowerPAK SO-8L package in document 63818, including 7.25 mm × 8.25 mm overall stencil opening, 4.061 mm × 2.310 mm exposed drain pad, and 0.510 mm × 0.595 mm gate/source lands. Adhering to this layout ensures optimal solder joint integrity, thermal transfer to inner layers, and mechanical reliability under thermal cycling - critical for automotive field life exceeding 15 years.
SQJA70EP-T1_BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 14.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 95mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 7 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 220 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 27W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJA70EP-T1_BE3 FAQ
1.How can I place an order for SQJA70EP-T1_BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJA70EP-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJA70EP-T1_BE3 reliable?
The price and inventory of SQJA70EP-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJA70EP-T1_BE3 is usually 5 days.
3.What payment methods are accepted for SQJA70EP-T1_BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJA70EP-T1_BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJA70EP-T1_BE3?
SQJA70EP-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJA70EP-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJA70EP-T1_BE3?
For technical support, including SQJA70EP-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJA70EP-T1_BE3 requirements.
6.How does Aetrix verify that SQJA70EP-T1_BE3 is sourced from the original manufacturer or authorized distributors?
All SQJA70EP-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJA70EP-T1_BE3 meets industry standards.
7.What is the process for return or replacement of SQJA70EP-T1_BE3?
All SQJA70EP-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJA70EP-T1_BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJA70EP-T1_BE3 part is unused and in its original packaging.
Return procedure for SQJA70EP-T1_BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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