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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQJA70EP-T1_GE3

Name: SQJA70EP-T1_GE3
Brand: Vishay Siliconix
SKU: SQJA70EP-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQJA70EP-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SQJA70EP-T1_GE3.pdf

Description:: MOSFET N-CH 100V 14.7A PPAK SO-8

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Product details

Overview

SQJA70EP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® MOSFET rated for 100 V drain-source voltage, 14.7 A continuous drain current at 25 °C, and 0.095 Ω R_DS(on) at V_GS = 10 V. It operates up to +175 °C junction temperature and is qualified to AEC-Q101, making it suitable for high-reliability engine control, transmission, and body electronics switching.

For engineers reviewing the SQJA70EP-T1_GE3 datasheet, SQJA70EP-T1_GE3 pinout, SQJA70EP-T1_GE3 application, or SQJA70EP-T1_GE3 equivalent, this page delivers verified electrical parameters, thermal performance data, PowerPAK® SO-8L package layout, and validated alternative parts for automotive power design validation and BOM optimization.

Technical Context

This MOSFET uses trench-gate silicon technology to achieve low on-resistance and fast switching with Q_g = 4–7 nC and t_d(on)/t_r/t_d(off)/t_f = 9–15 ns / 5–10 ns / 13–25 ns / 5–10 ns under standard test conditions. Its body diode exhibits V_SD = 0.89–1.2 V at I_F = 4 A and t_rr = 29–60 ns, supporting synchronous rectification and inductive load management.

The device features 100 % R_g and UIS testing per unit, with thermal resistance R_thJC = 3.3 °C/W (junction-to-case) and R_thJA = 70 °C/W (PCB mount), enabling stable operation in compact, thermally constrained automotive modules without forced airflow.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage for 12 V/48 V automotive systems with transient surge margin.
R_DS(on) @ V_GS = 10 V	0.095 Ω - Confirmed at T_J = 25 °C; rises to 0.208 Ω at 175 °C, defining conduction loss envelope.
I_D Continuous @ T_C = 25 °C	14.7 A - Sustained current capability with heatsink; derates to 8.5 A at 125 °C case temperature.
E_AS	5 mJ - Single-pulse avalanche energy rating ensures robustness against inductive switching transients.
Q_g	4–7 nC - Total gate charge range determines driver strength requirement and switching loss trade-off.
T_J Operating Range	−55 to +175 °C - Fully specified performance across full automotive under-hood temperature range.
AEC-Q101 Qualified	Yes - Validated for automotive reliability including HTOL, UHAST, TC, and ESD per stress test plan.

Pinout & Package

Package: PowerPAK® SO-8L (leadless, surface-mount, dual-side thermal pad). Dimensions: 5.13 mm × 6.15 mm × 1.07 mm (L × W × H); exposed copper drain pad on bottom side for enhanced thermal transfer.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 7, 8	Source (S)	Common source connection; pins 1/2/3/7/8 are internally tied - used for low-inductance return path and thermal conduction.
4	Gate (G)	Control terminal; requires ≤ ±20 V drive; R_g = 2.4–7.5 Ω measured at 1 MHz.
5, 6	Drain (D)	Main power output terminal; connected to large exposed copper pad on bottom - primary thermal and current path.

Key Features

Feature	Design Value
TrenchFET® architecture	Enables 0.095 Ω R_DS(on) in PowerPAK SO-8L footprint - reduces conduction loss vs. planar alternatives.
AEC-Q101 qualification	Validated for automotive use with zero defects in HTOL, TC, and ESD tests - supports ASIL-B system compliance.
100 % R_g and UIS tested	Each unit screened for gate resistance consistency and unclamped inductive switching robustness - eliminates field failure modes.
Thermally enhanced PowerPAK SO-8L	Exposed drain pad lowers R_thJC to 3.3 °C/W - enables >15 W dissipation with minimal PCB copper area.
Body diode t_rr = 29–60 ns	Fast reverse recovery supports high-frequency PWM in DC-DC converters and motor gate drivers without snubbers.

Applications

Engine Control Unit (ECU) Fuel Injector Driver	Automotive HVAC Blower Motor Controller
Use Scenario: High-side switching of 12 V fuel injectors with peak currents up to 12 A and 10 kHz PWM modulation. IC Role / Device Role / Timing Role: Main power switch controlling injector coil energization/de-energization; handles repetitive UIS events during coil flyback. Use Value: 5 mJ E_AS and 175 °C T_J rating ensure reliable operation in hot engine bay environments without derating.	Use Scenario: Low-side PWM control of brushed DC blower motors in climate control systems. IC Role / Device Role / Timing Role: Power stage switch with integrated body diode conducting freewheeling current during PWM off-time. Use Value: V_SD = 0.89–1.2 V and t_rr = 29–60 ns minimize conduction and recovery losses at 2–20 kHz switching frequencies.
48 V Mild Hybrid Starter-Generator Interface	Automotive LED Headlamp Matrix Driver
Use Scenario: Bidirectional current handling in 48 V starter-generator phase-legs with regenerative braking energy recovery. IC Role / Device Role / Timing Role: N-channel switch in half-bridge configuration; conducts forward current and blocks reverse voltage during regeneration. Use Value: 100 V V_DS provides 2× safety margin over 48 V nominal bus; R_DS(on) < 0.1 Ω limits I²R loss at 15 A continuous.	Use Scenario: Individual channel switching for adaptive LED headlamps requiring precise current regulation and fast dimming response. IC Role / Device Role / Timing Role: Low-side current sink for LED strings; switched at >1 kHz for PWM dimming with minimal dead-time distortion. Use Value: Fast t_d(on)/t_f (9–15 ns / 5–10 ns) and low Q_g enable clean edge transitions and reduced EMI in sensitive lighting zones.

Engine Control Unit (ECU) Fuel Injector Driver

Automotive HVAC Blower Motor Controller

Use Scenario: High-side switching of 12 V fuel injectors with peak currents up to 12 A and 10 kHz PWM modulation.

IC Role / Device Role / Timing Role: Main power switch controlling injector coil energization/de-energization; handles repetitive UIS events during coil flyback.

Use Value: 5 mJ E_AS and 175 °C T_J rating ensure reliable operation in hot engine bay environments without derating.

Use Scenario: Low-side PWM control of brushed DC blower motors in climate control systems.

IC Role / Device Role / Timing Role: Power stage switch with integrated body diode conducting freewheeling current during PWM off-time.

Use Value: V_SD = 0.89–1.2 V and t_rr = 29–60 ns minimize conduction and recovery losses at 2–20 kHz switching frequencies.

48 V Mild Hybrid Starter-Generator Interface

Automotive LED Headlamp Matrix Driver

Use Scenario: Bidirectional current handling in 48 V starter-generator phase-legs with regenerative braking energy recovery.

IC Role / Device Role / Timing Role: N-channel switch in half-bridge configuration; conducts forward current and blocks reverse voltage during regeneration.

Use Value: 100 V V_DS provides 2× safety margin over 48 V nominal bus; R_DS(on) < 0.1 Ω limits I²R loss at 15 A continuous.

Use Scenario: Individual channel switching for adaptive LED headlamps requiring precise current regulation and fast dimming response.

IC Role / Device Role / Timing Role: Low-side current sink for LED strings; switched at >1 kHz for PWM dimming with minimal dead-time distortion.

Use Value: Fast t_d(on)/t_f (9–15 ns / 5–10 ns) and low Q_g enable clean edge transitions and reduced EMI in sensitive lighting zones.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL100N10F7	100 V, 100 A, R_DS(on) = 0.0055 Ω @ 10 V, PowerFLAT 5x6 package, R_thJC = 1.2 °C/W	Higher current rating and lower R_DS(on), but larger footprint and higher gate charge (Q_g = 55 nC)	Select when board space allows and ultra-low conduction loss dominates over switching speed.
IRF7470PBF	100 V, 14 A, R_DS(on) = 0.11 Ω @ 10 V, SO-8 package, R_thJC = 4.0 °C/W, not AEC-Q101 qualified	Same pinout but lacks automotive qualification and has higher R_DS(on) and thermal resistance	Acceptable for non-automotive industrial use where AEC-Q101 is not required and thermal margin exists.

Compared with STL100N10F7 and IRF7470PBF, SQJA70EP-T1_GE3 delivers optimal balance of AEC-Q101 compliance, 0.095 Ω R_DS(on), 3.3 °C/W R_thJC, and 7 nC max Q_g in a compact PowerPAK SO-8L - making it the preferred choice for space-constrained, thermally demanding automotive modules.

Availability

SQJA70EP-T1_GE3 is available at Aetrix Electronics and suitable for engine control units, HVAC motor drives, and 48 V mild hybrid interfaces requiring stable component supply, long-term automotive lifecycle support, and traceable sourcing.

Supply support for SQJA70EP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix designs and manufactures discrete semiconductors including MOSFETs, diodes, and optoelectronics, with global manufacturing and reliability validation infrastructure.

The SQJA70EP-T1_GE3 belongs to Vishay's automotive-qualified TrenchFET® PowerPAK SO-8L MOSFET family, engineered specifically for high-temperature, high-reliability power switching in engine, chassis, and body control modules.

FAQ

What is the maximum junction temperature specification for SQJA70EP-T1_GE3?

The SQJA70EP-T1_GE3 is rated for continuous operation from −55 °C to +175 °C junction temperature. This rating is fully characterized and guaranteed across all electrical parameters in the datasheet, including R_DS(on), V_GS(th), and dynamic parameters - critical for under-hood automotive placement where ambient temperatures exceed 125 °C.

Is SQJA70EP-T1_GE3 pin-compatible with standard SO-8 MOSFETs?

No - SQJA70EP-T1_GE3 uses the leadless PowerPAK® SO-8L package with an exposed drain pad on the bottom and non-standard pin mapping (pins 1/2/3/7/8 = Source, pin 4 = Gate, pins 5/6 = Drain). It is not mechanically or electrically compatible with through-hole or gull-wing SO-8 packages and requires dedicated PCB layout per Vishay document 63818.

Does SQJA70EP-T1_GE3 include integrated ESD protection?

SQJA70EP-T1_GE3 does not include on-die ESD protection circuitry beyond inherent MOSFET gate oxide robustness. Its gate-source leakage (I_GSS) is specified at ±100 nA max at ±20 V, and it undergoes AEC-Q101 human-body model (HBM) ESD testing per qualification requirements - external TVS or RC filtering is recommended in noisy automotive environments.

What is the avalanche energy rating of SQJA70EP-T1_GE3 and how is it tested?

The SQJA70EP-T1_GE3 has a single-pulse avalanche energy rating (E_AS) of 5 mJ, measured with L = 0.1 mH, I_AS = 10 A, and V_DD = 100 V. Each unit undergoes 100 % unclamped inductive switching (UIS) testing per production lot - a key reliability screen for automotive inductive load switching applications like fuel injectors and solenoids.

Can SQJA70EP-T1_GE3 be used in synchronous rectification topologies?

Yes - SQJA70EP-T1_GE3 supports synchronous rectification due to its fast body diode with t_rr = 29–60 ns and low V_SD = 0.89–1.2 V at I_F = 4 A. Its low Q_gd/Q_gs ratio (1.25 nC / 1 nC) also enables clean turn-off behavior in high-side configurations, reducing shoot-through risk in DC-DC converters up to 500 kHz.

SQJA70EP-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 14.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 95mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 7 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 220 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 27W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SQJA70EP-T1_GE3 FAQ

1.How can I place an order for SQJA70EP-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQJA70EP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQJA70EP-T1_GE3 reliable?

The price and inventory of SQJA70EP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJA70EP-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQJA70EP-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJA70EP-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQJA70EP-T1_GE3?

SQJA70EP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQJA70EP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQJA70EP-T1_GE3?

For technical support, including SQJA70EP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJA70EP-T1_GE3 requirements.

6.How does Aetrix verify that SQJA70EP-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQJA70EP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJA70EP-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQJA70EP-T1_GE3?

All SQJA70EP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJA70EP-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQJA70EP-T1_GE3 part is unused and in its original packaging.

Return procedure for SQJA70EP-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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