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Vishay Siliconix SQJA72EP-T1_BE3
- Part No.:
- SQJA72EP-T1_BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJA72EP-T1_BE3.pdf
- Description:
- N-CHANNEL 100-V (D-S) 175C MOSFE
- Quantity:
- Payment:
- Shipping:
Inventory:9,000
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Product details
Overview
SQJA72EP-T1_BE3 from Vishay Siliconix is an automotive-grade N-channel 100 V MOSFET in PowerPAK® SO-8L package, delivering RDS(on) = 0.0190 Ω at VGS = 10 V and 37 A continuous drain current at TC = 25 °C. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for engine control, DC-DC converters, and high-side load switching in under-hood applications.
For engineers reviewing the SQJA72EP-T1_BE3 datasheet, SQJA72EP-T1_BE3 pinout, SQJA72EP-T1_BE3 application, or SQJA72EP-T1_BE3 equivalent, this device supports high-current, high-temperature automotive power switching with verified UIS robustness, 100 % Rg testing, and leadless thermal performance optimized for PCB-mounted thermal management.
Technical Context
This MOSFET uses Vishay's TrenchFET® process to achieve low on-resistance and fast switching with Qg = 20 nC (typ.) and Ciss = 1065 pF (typ.) at VDS = 25 V. Its gate threshold voltage is tightly specified at 1.5–2.5 V, enabling reliable drive from 3.3 V and 5 V controllers.
The PowerPAK SO-8L package features exposed-drain thermal pad and bottom-side copper terminals, achieving RthJC = 2.7 °C/W and RthJA = 70 °C/W (PCB mount). Body diode recovery parameters-trr = 41 ns (typ.), Qrr = 42 nC (typ.)-support synchronous rectification and freewheeling in hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Supports 48 V automotive systems with ≥2× voltage margin against transients |
| RDS(on) @ VGS = 10 V | 0.0190 Ω - Enables <1.9 W conduction loss at 10 A, critical for thermally constrained modules |
| RDS(on) @ VGS = 4.5 V | 0.0235 Ω - Ensures robust turn-on with standard 5 V logic-level gate drivers |
| ID (continuous, TC = 25 °C) | 37 A - Sustains high-current motor drives and solenoid loads without derating |
| Junction temp. range | −55 to +175 °C - Qualified for under-hood environments including turbocharger controls and transmission ECUs |
| Qg (total gate charge) | 20 nC (typ.) - Reduces gate drive power and enables efficient 100–500 kHz switching in DC-DC stages |
| EAS | 39.2 mJ - Withstands single-pulse avalanche energy during inductive load interruption |
Pinout & Package
Package: PowerPAK® SO-8L (leadless, exposed-drain thermal pad), dimensions 5.13 mm × 6.15 mm × 1.07 mm (D × E × A), JEDEC-compliant footprint per Doc. #63818.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 7, 8 | Source (S) | Five parallel source terminals reduce package inductance and improve current sharing in high-di/dt switching |
| 4 | Gate (G) | Single gate input with Rg = 1.4 Ω (typ.) - minimizes ringing and simplifies gate driver layout |
| 5, 6 | Drain (D) | Two large-area drain terminals connected to exposed copper thermal pad - primary heat path to PCB |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive use across temperature, humidity, and mechanical stress profiles per Rev. B test plan |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency and unclamped inductive switching reliability |
| TrenchFET® technology | Enables lower RDS(on) × Qg figure-of-merit versus planar MOSFETs, improving efficiency in 100–300 kHz converters |
| Body diode trr = 41 ns (typ.) | Reduces reverse recovery losses and EMI in synchronous buck and half-bridge configurations |
| Exposed-drain thermal pad | Enables direct thermal coupling to inner-layer copper planes, lowering RthJA by up to 30 % vs. SO-8 |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | 48 V Automotive DC-DC Converter Primary Switch |
|---|---|
Use Scenario: High-speed, high-current switching of fuel injectors in gasoline direct injection (GDI) systems with peak currents >30 A and pulse widths <2 ms. IC Role / Device Role / Timing Role: High-side N-channel MOSFET switch controlled via PWM from microcontroller with external gate driver. Use Value: Low RDS(on) minimizes I²R heating during extended duty cycles; 175 °C rating ensures reliability near hot engine blocks. |
Use Scenario: Primary-side switch in 48 V–12 V bidirectional buck-boost converter for mild hybrid vehicles. IC Role / Device Role / Timing Role: Synchronously switched power transistor operating at 200 kHz with 5 V gate drive. Use Value: Fast Qg and low Ciss reduce switching losses; robust body diode supports ZVS transitions and freewheeling. |
| Electric Power Steering (EPS) Motor Phase Leg | High-Side Load Switch for ADAS Camera Module |
Use Scenario: Half-bridge leg in three-phase EPS motor inverter, handling 25 A RMS phase current with regenerative braking. IC Role / Device Role / Timing Role: Low-side switching element with integrated freewheeling path and fast trr-optimized body diode. Use Value: 39.2 mJ EAS withstands inductive kickback during fault shutdown; AEC-Q101 ensures functional safety compliance. |
Use Scenario: Controlled power enable for 12 V camera module in surround-view system, requiring zero quiescent current when off. IC Role / Device Role / Timing Role: High-side load switch with logic-level gate interface and overtemperature protection. Use Value: Ultra-low IDSS (<1 μA at 100 V) prevents battery drain; 175 °C rating supports sealed housing operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 100 V automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N10F7 | RDS(on) = 0.0019 Ω @ 10 V (lower), but rated only to 150 °C junction; no AEC-Q101 documentation in public datasheet | Not qualified for under-hood 175 °C operation; suitable for cabin or chassis locations with lower ambient | Select if higher current density is needed and temperature requirement ≤150 °C |
| IXTP110N10T | TO-220 package, RDS(on) = 0.011 Ω @ 10 V, but lacks AEC-Q101 and has higher RthJA (62 °C/W on 1"² PCB) | Requires heatsink for same power dissipation; not drop-in for surface-mount PowerPAK layouts | Select only for prototyping or non-automotive industrial use where manual assembly is acceptable |
Compared with STL220N10F7 and IXTP110N10T, the SQJA72EP-T1_BE3 uniquely combines AEC-Q101 qualification, 175 °C operation, and PowerPAK SO-8L surface-mount thermal performance-making it the only option for production automotive modules requiring zero layout change and full temperature compliance.
Availability
SQJA72EP-T1_BE3 is available at Aetrix Electronics and suitable for engine control units, 48 V DC-DC converters, and electric power steering systems requiring stable component supply across multi-year automotive production cycles.
Supply support for SQJA72EP-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing applications.
The SQJA72EP-T1_BE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-reliability, high-temperature switching in next-generation 48 V architectures and electrified powertrain subsystems.
FAQ
What is the maximum continuous drain current rating for SQJA72EP-T1_BE3 at 125 °C case temperature?
The SQJA72EP-T1_BE3 supports 21 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK SO-8L package and ensures safe operation in high-ambient automotive environments such as transmission control modules. The SQJA72EP-T1_BE3 maintains RDS(on) = 0.0326 Ω (max) at this condition, enabling predictable conduction loss modeling.
Is SQJA72EP-T1_BE3 pin-compatible with standard SO-8 or PowerPAK SO-8 devices?
No-SQJA72EP-T1_BE3 uses the leadless PowerPAK® SO-8L footprint, which differs mechanically and electrically from through-hole SO-8 and even standard PowerPAK SO-8. Its five-source, two-drain, one-gate terminal layout requires dedicated PCB land patterns per Vishay Doc. #63818. The SQJA72EP-T1_BE3 cannot be substituted without board redesign, as its exposed-drain thermal pad and bottom-terminal configuration are incompatible with SO-8 socketing or reflow profiles for plated-through-hole packages.
Does SQJA72EP-T1_BE3 include integrated gate protection or ESD structures?
The SQJA72EP-T1_BE3 incorporates built-in gate oxide protection against electrostatic discharge per AEC-Q101 requirements, with |IGSS| ≤ ±100 nA at ±20 V gate bias. However, it does not contain external gate resistors, TVS clamps, or active protection circuitry-the SQJA72EP-T1_BE3 relies on proper PCB layout (short gate traces, local decoupling) and external gate driver design for robustness. No internal Zener or series resistor is present.
What is the typical body diode forward voltage of SQJA72EP-T1_BE3 at 10 A and room temperature?
The typical body diode forward voltage (VSD) of the SQJA72EP-T1_BE3 is 0.84 V at IF = 10 A and VGS = 0 V, as measured per the datasheet's Source-Drain Diode Characteristics table. This low VSD reduces conduction loss during freewheeling phases in H-bridge and synchronous rectifier applications. The SQJA72EP-T1_BE3 exhibits minimal temperature coefficient, maintaining VSD < 1.2 V even at 175 °C junction temperature.
Can SQJA72EP-T1_BE3 be used in linear mode (as a pass transistor or current regulator)?
The SQJA72EP-T1_BE3 is not characterized or guaranteed for linear-mode operation. Its Safe Operating Area (SOA) graph shows only single-pulse capability down to DC, with current limited by RDS(on) and thermal constraints-not by linear-region SOA boundaries. For linear applications requiring sustained VDS > 5 V and moderate ID, Vishay recommends dedicated lateral or DMOS linear MOSFETs. The SQJA72EP-T1_BE3 should be operated in saturated switching mode only.
SQJA72EP-T1_BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 37A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 19mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 30 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1390 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 55W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJA72EP-T1_BE3 FAQ
1.How can I place an order for SQJA72EP-T1_BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJA72EP-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJA72EP-T1_BE3 reliable?
The price and inventory of SQJA72EP-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJA72EP-T1_BE3 is usually 5 days.
3.What payment methods are accepted for SQJA72EP-T1_BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJA72EP-T1_BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJA72EP-T1_BE3?
SQJA72EP-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJA72EP-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJA72EP-T1_BE3?
For technical support, including SQJA72EP-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJA72EP-T1_BE3 requirements.
6.How does Aetrix verify that SQJA72EP-T1_BE3 is sourced from the original manufacturer or authorized distributors?
All SQJA72EP-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJA72EP-T1_BE3 meets industry standards.
7.What is the process for return or replacement of SQJA72EP-T1_BE3?
All SQJA72EP-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJA72EP-T1_BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJA72EP-T1_BE3 part is unused and in its original packaging.
Return procedure for SQJA72EP-T1_BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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