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Vishay Siliconix SQJA72EP-T1_GE3
- Part No.:
- SQJA72EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJA72EP-T1_GE3.pdf
- Description:
- MOSFET N-CH 100V 37A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:8,440
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Product details
Overview
SQJA72EP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET with 100 V drain-source rating, 37 A continuous drain current at 25 °C, and RDS(on) of 19.0 mΩ at VGS = 10 V - designed for high-efficiency DC-DC converters and motor control stages in engine management and battery systems.
For engineers reviewing the SQJA72EP-T1_GE3 datasheet, SQJA72EP-T1_GE3 pinout, SQJA72EP-T1_GE3 application, or SQJA72EP-T1_GE3 equivalent, this device delivers AEC-Q101 qualification, 175 °C junction operation, and robust UIS/100% Rg testing - critical for under-hood automotive power switching where thermal resilience and fault immunity are non-negotiable.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in hard-switched topologies. Its gate charge profile (Qg = 20–30 nC, Qgd = 5 nC) supports efficient PWM control at frequencies up to 500 kHz in synchronous buck stages.
Thermal design is enabled by a PowerPAK® SO-8L package with RthJC = 2.7 °C/W and RthJA = 70 °C/W (1"² FR4 PCB), allowing sustained 21 A operation at 125 °C case temperature - validated across -55 °C to +175 °C junction range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Withstands transient overvoltage spikes common in 48 V automotive bus systems without breakdown. |
| RDS(on) @ 10 V | 19.0 mΩ - Enables ≤ 7 W conduction loss at 37 A, reducing heatsink requirements in space-constrained modules. |
| ID (continuous) | 37 A @ TC = 25 °C - Supports high-current load switching in starter-generator inverters and HVAC blowers. |
| Qg | 20–30 nC - Low gate drive energy reduces controller IC loading and enables use with standard 1 A gate drivers. |
| TJ range | -55 to +175 °C - Certified for under-hood placement in power distribution units and transmission control modules. |
| EAS | 39.2 mJ - Withstands single-pulse avalanche events during inductive load turn-off without failure. |
| VGS(th) | 1.5–2.5 V - Ensures reliable enhancement-mode turn-on with standard 3.3 V or 5 V logic-level microcontrollers. |
Pinout & Package
Package: PowerPAK® SO-8L (leadless, surface-mount, 5.13 mm × 6.15 mm footprint). Exposed copper drain pad on bottom side provides low-inductance, high-current path and thermal conduction to PCB ground plane.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 7, 8 | Source (S) | Common source terminals - paralleled for low-resistance return path and enhanced current sharing. |
| 4 | Gate (G) | Control input - requires <20 V max; low Rg (0.6–2.2 Ω) minimizes ringing in high-dV/dt environments. |
| 5, 6 | Drain (D) | Main power output - connected to exposed copper pad; handles full 37 A load current and dissipates heat into PCB. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive electronics per stress test standards - required for ECU, ADAS, and powertrain applications. |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency and unclamped inductive switching robustness - eliminates field failures from surge events. |
| TrenchFET® architecture | Optimized cell density and reduced specific on-resistance - achieves 19.0 mΩ in compact SO-8L footprint vs. legacy planar MOSFETs. |
| 175 °C maximum TJ | Enables operation in high-ambient zones (e.g., near exhaust manifolds or inverters) without derating or forced cooling. |
| Low Ciss/Coss ratio | 1065 pF / 560 pF - improves zero-voltage switching (ZVS) compatibility and reduces switching losses in resonant topologies. |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | 48 V Mild Hybrid DC-DC Converter |
|---|---|
Use Scenario: High-speed switching of solenoid fuel injectors in gasoline direct injection systems. IC Role / Device Role / Timing Role: Low-side switch controlling injector coil current with precise 1–5 ms pulse width modulation. Use Value: 19.0 mΩ RDS(on) minimizes I²R heating during extended duty cycles; 175 °C rating ensures reliability near hot engine blocks. |
Use Scenario: Synchronous rectification in 48 V-to-12 V bidirectional buck-boost converters for mild hybrid vehicles. IC Role / Device Role / Timing Role: High-side or low-side power switch operating at 200–300 kHz with tight dead-time control. Use Value: Low Qgd/Qg ratio (5/25 nC) enables clean turn-off and reduces cross-conduction risk in high-frequency ZVS designs. |
| Electric Power Steering (EPS) Motor Phase Leg | On-Board Charger (OBC) Auxiliary Power Supply |
Use Scenario: Half-bridge phase leg in 3-phase EPS motor driver delivering up to 15 kW peak power. IC Role / Device Role / Timing Role: N-channel MOSFET in high-side or low-side position with bootstrap gate drive. Use Value: 39.2 mJ EAS withstands motor regeneration spikes; 21 A @ 125 °C supports continuous torque delivery during parking maneuvers. |
Use Scenario: Primary-side switching in auxiliary flyback or forward converter powering OBC control circuitry. IC Role / Device Role / Timing Role: Main power switch handling 10–20 A peak current at 100 kHz switching frequency. Use Value: 100 % UIS testing guarantees survival during output short-circuit events; leadless PowerPAK SO-8L enables high-density layout in constrained OBC PCBs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N10F7 | RDS(on) = 1.8 mΩ @ 10 V (lower), but rated only to 150 °C TJ; larger H2PAK-2 package (7.5 × 6.2 mm). | Preferred for ultra-low-loss 12 V systems; unsuitable for 175 °C under-hood locations requiring SQJA72EP-T1_GE3's thermal margin. | Select STL220N10F7 only when junction temperature stays below 150 °C and board area permits larger footprint. |
| IRF7470PBF | RDS(on) = 22 mΩ @ 10 V (higher); TO-252 package; not AEC-Q101 qualified; RthJA = 62 °C/W (worse thermal performance). | Acceptable for industrial non-automotive DC-DC converters; lacks automotive qualification and avalanche ruggedness. | Choose IRF7470PBF only for cost-sensitive non-automotive applications where AEC-Q101 and 175 °C operation are not required. |
Compared with STL220N10F7 and IRF7470PBF, SQJA72EP-T1_GE3 uniquely balances 100 V rating, 175 °C capability, AEC-Q101 compliance, and SO-8L compactness - making it the only option qualified for safety-critical automotive power stages where thermal headroom and qualification rigor are mandatory.
Availability
SQJA72EP-T1_GE3 is available at Aetrix Electronics and suitable for engine control units, 48 V mild hybrid converters, and electric power steering systems requiring stable component supply across multi-year automotive production programs.
Supply support for SQJA72EP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJA72EP-T1_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family - engineered specifically for high-temperature, high-reliability power switching in next-generation vehicle electrification systems.
FAQ
What is the maximum continuous drain current for SQJA72EP-T1_GE3 at 125 °C case temperature?
The SQJA72EP-T1_GE3 supports 21 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This value reflects derating due to thermal constraints and is validated for sustained operation in high-ambient automotive environments such as power distribution modules. The SQJA72EP-T1_GE3 maintains safe operation within its Safe Operating Area (SOA) curve under these conditions.
Is SQJA72EP-T1_GE3 suitable for synchronous rectification in a 48 V automotive DC-DC converter?
Yes, SQJA72EP-T1_GE3 is well-suited for synchronous rectification in 48 V automotive DC-DC converters. Its 19.0 mΩ RDS(on) at 10 V gate drive minimizes conduction loss, while its 20–30 nC total gate charge and low Qgd/Qg ratio support clean, efficient switching at typical converter frequencies (200–500 kHz). The SQJA72EP-T1_GE3's AEC-Q101 qualification and 175 °C rating further ensure reliability in this demanding application.
Does SQJA72EP-T1_GE3 have integrated gate protection or require external Zener clamping?
SQJA72EP-T1_GE3 does not include integrated gate oxide protection. Its absolute maximum VGS rating is ±20 V, and gate-source leakage is limited to ±100 nA at ±20 V - confirming robust oxide integrity. However, Vishay recommends external gate protection (e.g., 12–15 V Zener clamp) in noisy automotive environments to prevent accidental overvoltage during transients. This practice applies universally to the SQJA72EP-T1_GE3 and is detailed in Vishay's application notes for TrenchFET® devices.
What is the thermal resistance from junction to case (RthJC) for SQJA72EP-T1_GE3, and how is it measured?
The junction-to-case thermal resistance (RthJC) for SQJA72EP-T1_GE3 is 2.7 °C/W, measured from the silicon die to the exposed drain copper pad on the bottom of the PowerPAK® SO-8L package. This value is determined under standardized conditions per JEDEC JESD51-14 and assumes direct thermal contact between the drain pad and a large copper area on the PCB. It enables accurate junction temperature estimation in SQJA72EP-T1_GE3-based designs using TJ = TC + (PD × RthJC).
Can SQJA72EP-T1_GE3 replace older Vishay MOSFETs like SI7862DP in automotive designs?
SQJA72EP-T1_GE3 is not a direct replacement for SI7862DP due to differences in voltage rating (100 V vs. 60 V), RDS(on) (19.0 mΩ vs. 3.2 mΩ), and package (PowerPAK SO-8L vs. PowerPAK 8x8). While both are AEC-Q101 qualified N-channel MOSFETs, the SQJA72EP-T1_GE3 targets higher-voltage, higher-temperature applications such as 48 V systems and under-hood power stages where SI7862DP would exceed its voltage or thermal limits. Migration requires full electrical and thermal revalidation of the SQJA72EP-T1_GE3 in the target circuit.
SQJA72EP-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 37A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 19mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 30 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1390 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 55W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJA72EP-T1_GE3 FAQ
1.How can I place an order for SQJA72EP-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJA72EP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJA72EP-T1_GE3 reliable?
The price and inventory of SQJA72EP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJA72EP-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJA72EP-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJA72EP-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJA72EP-T1_GE3?
SQJA72EP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJA72EP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJA72EP-T1_GE3?
For technical support, including SQJA72EP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJA72EP-T1_GE3 requirements.
6.How does Aetrix verify that SQJA72EP-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJA72EP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJA72EP-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJA72EP-T1_GE3?
All SQJA72EP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJA72EP-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJA72EP-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJA72EP-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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