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Vishay Siliconix SQJA76EP-T1_GE3
- Part No.:
- SQJA76EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJA76EP-T1_GE3.pdf
- Description:
- MOSFET N-CH 40V 75A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:2,550
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Product details
Overview
SQJA76EP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET with 40 V VDS, 2.4 mΩ RDS(on) at VGS = 10 V, and 75 A continuous drain current at TC = 25 °C. It serves as a high-efficiency main or synchronous rectifier switch in 12 V/24 V automotive power distribution systems.
For engineers reviewing the SQJA76EP-T1_GE3 datasheet, SQJA76EP-T1_GE3 pinout, SQJA76EP-T1_GE3 application, or SQJA76EP-T1_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, 175 °C maximum junction temperature, low gate charge (66 nC typ), and PowerPAK® SO-8L leadless package optimized for high-current DC/DC and motor control modules.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with controlled Qgd/Qgs ratio (14 nC / 17 nC). Its body diode exhibits 65 ns typical reverse recovery time and 123 nC Qrr, supporting efficient synchronous rectification in buck converters.
The device features 100 % Rg and UIS testing per AEC-Q101, with thermal resistance RthJC = 2.2 °C/W enabling high-power operation when mounted on copper-clad PCBs. Junction-to-ambient RthJA is 68 °C/W under standard 1"² FR4 mounting conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage compatible with 12 V/24 V automotive battery rails including load dump transients |
| RDS(on) @ VGS = 10 V | 2.4 mΩ max - Enables <1 W conduction loss at 75 A, critical for high-current power switches |
| ID (continuous) | 75 A @ TC = 25 °C - Supports high-side or low-side switching in starter solenoid drivers and HVAC blowers |
| Qg (total gate charge) | 66 nC typ - Reduces gate drive power and enables use with standard 1 A peak gate drivers |
| TJ operating range | –55 °C to +175 °C - Qualified for under-hood applications including engine control units and transmission modules |
| EAS | 96.8 mJ - Withstands single-pulse avalanche energy during inductive turn-off in motor drives |
| VGS(th) | 2.5–3.5 V - Ensures robust turn-on margin with 3.3 V or 5 V logic-level gate drivers |
Pinout & Package
Package: PowerPAK® SO-8L (leadless, surface-mount, dual-side thermal pad). Dimensions: 5.13 mm × 6.15 mm × 1.07 mm (L × W × H), with exposed drain copper on bottom side for enhanced thermal transfer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 7, 8 (Drain pads) | Drain (D) | Five parallel drain terminals form low-inductance, high-current path to PCB thermal plane; electrically tied internally |
| 4 | Gate (G) | Single gate input with 0.76 Ω typical gate resistance; requires <100 ns rise/fall for full-speed switching |
| 5, 6 (Source pads) | Source (S) | Two source terminals provide return path and enable Kelvin sensing; connected to PCB ground plane |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine management, ADAS power stages, and EV auxiliary systems |
| 100 % Rg and UIS tested | Ensures gate robustness against ESD and ruggedness against unclamped inductive switching stress |
| PowerPAK® SO-8L package | Reduces thermal resistance by 40 % vs. standard SO-8; eliminates leadframe inductance for cleaner switching waveforms |
| Low Qgd/Qgs ratio | 0.82 typ (14 nC / 17 nC) minimizes Miller plateau duration and improves hard-switching efficiency |
| Body diode with low Qrr | 123 nC typical reverse recovery charge reduces shoot-through risk and EMI in synchronous rectifiers |
Applications
| Engine Control Unit (ECU) Power Switch | Automotive DC/DC Converter |
|---|---|
|
Use Scenario: High-side switch controlling fuel injector or ignition coil driver in gasoline/diesel ECUs. IC Role / Device Role / Timing Role: Main power switch handling pulsed 5–10 A loads at 1–10 kHz with tight timing control. Use Value: 2.4 mΩ RDS(on) limits I²R loss to <0.25 W at 7 A, enabling compact heatsink-free design within ECU housing. |
Use Scenario: Synchronous rectifier in 12 V → 3.3 V/5 V buck converter powering infotainment microcontrollers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating at 300–500 kHz with precise dead-time control. Use Value: 65 ns trr and 123 nC Qrr minimize reverse recovery losses, improving converter efficiency by ≥1.2 % at full load. |
| Electric Power Steering (EPS) Motor Driver | Automotive HVAC Blower Module |
|
Use Scenario: Half-bridge low-side switch in 3-phase EPS inverter driving 12 V brushed or BLDC motors. IC Role / Device Role / Timing Role: Fast-switching power stage subjected to repetitive 100 A peak currents and PWM frequencies up to 20 kHz. Use Value: 175 °C TJ rating and 2.2 °C/W RthJC allow sustained 65.6 A operation at 125 °C case temperature without derating. |
Use Scenario: High-current PWM switch regulating airflow in cabin HVAC blower motors (up to 40 A). IC Role / Device Role / Timing Role: Low-side switch modulated at 20–100 Hz for torque control, with occasional 200 A pulsed overload. Use Value: 200 A IDM pulse rating and 96.8 mJ EAS withstand repeated stall events without failure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL8726PBF | RDS(on) = 2.8 mΩ @ 10 V; TO-220AB package; no AEC-Q101 qualification | Requires external heatsink; not approved for automotive safety-critical systems | Preferred for industrial prototypes where qualification is not mandated |
| STL220N4F7AG | RDS(on) = 2.2 mΩ @ 10 V; PowerFLAT™ 5x6 package; AEC-Q101 qualified | Higher capacitance (Ciss = 5700 pF vs. 4005 pF) increases gate drive loss at >300 kHz | Better for ultra-low RDS(on) needs below 125 °C; less optimal for high-frequency DC/DC |
Compared with IRL8726PBF and STL220N4F7AG, SQJA76EP-T1_GE3 delivers the best balance of automotive qualification, thermal performance (2.2 °C/W RthJC), and high-frequency suitability (low Ciss/Qg), making it optimal for space-constrained, thermally demanding automotive power stages.
Availability
SQJA76EP-T1_GE3 is available at Aetrix Electronics and suitable for automotive power distribution, motor control, and DC/DC conversion requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for SQJA76EP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix designs and manufactures discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability and automotive qualification.
SQJA76EP-T1_GE3 belongs to Vishay's TrenchFET® automotive MOSFET family, engineered specifically for high-current, high-temperature power switching in engine, chassis, and body electronics.
FAQ
What is the maximum continuous drain current for SQJA76EP-T1_GE3 at 125 °C case temperature?
The SQJA76EP-T1_GE3 supports 65.6 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK® SO-8L package and ensures reliable operation in under-hood environments where ambient temperatures exceed 85 °C. The SQJA76EP-T1_GE3 maintains this rating while preserving its 2.4 mΩ RDS(on) performance up to 175 °C junction temperature.
Is SQJA76EP-T1_GE3 suitable for synchronous rectification in a 400 kHz buck converter?
Yes, SQJA76EP-T1_GE3 is well-suited for synchronous rectification at 400 kHz due to its low total gate charge (66 nC typ), fast switching times (tr/tf ≤ 30 ns), and low output capacitance (Coss = 1160 pF typ). Its 65 ns typical body diode reverse recovery time and 123 nC Qrr reduce switching loss and cross-conduction risk. The SQJA76EP-T1_GE3 has been validated in such topologies per Vishay application notes for automotive DC/DC modules.
Does SQJA76EP-T1_GE3 require special rework considerations due to its leadless package?
Yes, SQJA76EP-T1_GE3 uses the PowerPAK® SO-8L leadless package, and manual soldering with a soldering iron is not recommended per Vishay documentation. Rework must use precision hot-air stations with profiled temperature ramp (peak ≤ 260 °C) and controlled dwell time. The exposed copper drain pad on the bottom side does not require a visible solder fillet but must achieve full intermetallic bonding to the PCB thermal pad. The SQJA76EP-T1_GE3 rework guidelines are detailed in document www.vishay.com/doc?73257.
What is the gate-source threshold voltage range for SQJA76EP-T1_GE3, and how does it affect 3.3 V logic compatibility?
The SQJA76EP-T1_GE3 has a VGS(th) range of 2.5–3.5 V, meaning it begins conducting at ≥2.5 V and fully enhances above ~4.5 V. While it will turn on with a 3.3 V gate drive, RDS(on) rises significantly (e.g., >5 mΩ at VGS = 4.5 V), increasing conduction loss. For optimal performance, the SQJA76EP-T1_GE3 should be driven with ≥10 V; however, its low threshold enables partial functionality in fault-tolerant 3.3 V control schemes where marginal turn-on is acceptable.
How is the avalanche capability of SQJA76EP-T1_GE3 verified, and what does 96.8 mJ EAS mean in practice?
The SQJA76EP-T1_GE3 undergoes 100 % unclamped inductive switching (UIS) testing per AEC-Q101, with EAS = 96.8 mJ measured at L = 0.1 mH. This means the device can safely absorb up to 96.8 mJ of energy during a single inductive turn-off event-equivalent to interrupting 44 A through a 0.1 mH inductor at 40 V. In practice, this protects the SQJA76EP-T1_GE3 in motor driver half-bridges or solenoid drivers during sudden current interruption without external snubbers.
SQJA76EP-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 2.4mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 100 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5250 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 68W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJA76EP-T1_GE3 FAQ
1.How can I place an order for SQJA76EP-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJA76EP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJA76EP-T1_GE3 reliable?
The price and inventory of SQJA76EP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJA76EP-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJA76EP-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJA76EP-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJA76EP-T1_GE3?
SQJA76EP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJA76EP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJA76EP-T1_GE3?
For technical support, including SQJA76EP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJA76EP-T1_GE3 requirements.
6.How does Aetrix verify that SQJA76EP-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJA76EP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJA76EP-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJA76EP-T1_GE3?
All SQJA76EP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJA76EP-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJA76EP-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJA76EP-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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