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Vishay Siliconix SQJA80EP-T1_BE3
- Part No.:
- SQJA80EP-T1_BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJA80EP-T1_BE3.pdf
- Description:
- N-CHANNEL 80-V (D-S) 175C MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:8,960
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Product details
Overview
SQJA80EP-T1_BE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 80 V drain-source voltage, 60 A continuous drain current at 25 °C, and 175 °C maximum junction temperature. It features 7.0 mΩ RDS(on) at VGS = 10 V and 10.0 mΩ at 4.5 V, and is qualified to AEC-Q101 for under-hood motor control and DC-DC converter applications.
For engineers reviewing the SQJA80EP-T1_BE3 datasheet, SQJA80EP-T1_BE3 pinout, SQJA80EP-T1_BE3 application, or SQJA80EP-T1_BE3 equivalent, this page delivers verified thermal resistance (RthJC = 2.2 °C/W), gate charge (Qg = 40–75 nC), avalanche energy rating (EAS = 61 mJ), and PowerPAK SO-8L package dimensions - all critical for high-reliability automotive power stage design.
Technical Context
This MOSFET uses trench-gate silicon technology optimized for low conduction loss and fast switching in 12 V/48 V automotive systems. Its 2.2 °C/W junction-to-case thermal resistance enables high-power operation with minimal heatsinking, while 100 % Rg and UIS testing ensures robustness against gate oscillation and unclamped inductive switching stress.
The device supports logic-level drive (VGS(th) = 1.5–2.5 V) and exhibits 2800–3800 pF input capacitance (Ciss) and 73–100 pF reverse transfer capacitance (Crss) at VDS = 25 V, enabling predictable turn-on/turn-off timing in synchronous buck and half-bridge topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 80 V - Maximum blocking voltage for 12 V/48 V battery rail protection and motor drive circuits |
| RDS(on) @ 10 V | 7.0 mΩ - Enables ≤ 4.2 W conduction loss at 60 A, reducing thermal load in compact power modules |
| RDS(on) @ 4.5 V | 10.0 mΩ - Supports direct drive from 3.3 V/5 V microcontrollers without gate driver amplification |
| ID (continuous) | 60 A @ TC = 25 °C - Sustains high-current loads such as HVAC blower motors and EPS assist actuators |
| EAS | 61 mJ - Withstands single-pulse inductive energy from solenoid or motor coil de-energization |
| RthJC | 2.2 °C/W - Allows efficient heat transfer to PCB copper or heatsink, critical for under-hood ambient up to 125 °C |
| Qg | 40–75 nC - Determines gate driver power requirement and switching loss trade-off in 100–500 kHz converters |
Pinout & Package
Package: PowerPAK® SO-8L (leadless, dual-side thermal pad), dimensions 6.15 mm × 5.13 mm × 1.07 mm (JEDEC MO-263AA). Exposed drain copper on bottom side provides low-inductance, high-current path and primary thermal interface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 6, 7 | Source (S) | Common source connection for internal parallel die; low-inductance return path for high di/dt currents |
| 5 | Gate (G) | Control terminal requiring <2.5 V threshold; gate resistance 0.20–0.65 Ω limits ringing in high-speed switching |
| 8 | Drain (D) | Exposed copper thermal pad on bottom surface - must be soldered to large PCB copper pour for RthJC = 2.2 °C/W |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive temperature cycling (-55 °C to +175 °C), HTRB, and UHAST per JESD22-A108 |
| TrenchFET® architecture | Reduces RDS(on) × Qg figure-of-merit by 35 % vs. planar MOSFETs, improving efficiency in 100–300 kHz DC-DC stages |
| 100 % Rg tested | Ensures gate resistance between 0.20–0.65 Ω, guaranteeing consistent switching speed and EMI profile across production lots |
| 100 % UIS tested | Each unit passes unclamped inductive switching test at IAS = 35 A, L = 0.1 mH, verifying ruggedness in motor fault conditions |
| Lead (Pb)-free & halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709E, supporting automotive end-of-life material compliance |
Applications
| Electric Power Steering (EPS) | Automotive DC-DC Converters |
|---|---|
|
Use Scenario: High-side switch in 12 V → 48 V bi-directional buck-boost converter for steer-by-wire actuation. IC Role / Device Role / Timing Role: Main power switch handling 50 A peak current with <30 ns fall time and 61 mJ avalanche capability during regenerative braking events. Use Value: Low 7.0 mΩ RDS(on) minimizes conduction loss at 100 kHz switching, while 175 °C rating sustains operation near engine bay heat sources. |
Use Scenario: Synchronous rectifier in isolated 48 V → 12 V LLC resonant converter for ADAS camera and radar modules. IC Role / Device Role / Timing Role: Low-side synchronous FET with 10.0 mΩ RDS(on) @ 4.5 V, driven directly from controller's 5 V gate output without level-shifting. Use Value: 2800–3800 pF Ciss enables precise dead-time control, reducing shoot-through risk and improving light-load efficiency. |
| Engine Cooling Fan Control | On-Board Charger (OBC) Auxiliary Supply |
|
Use Scenario: PWM-driven high-side switch controlling 12 V brushless fan motor with stall current up to 60 A. IC Role / Device Role / Timing Role: Robust N-channel MOSFET operating at 20–50 kHz PWM, leveraging 120 A pulsed drain rating and body diode recovery time <135 ns. Use Value: 0.8–1.2 V forward voltage (VSD) of integrated body diode reduces freewheeling loss during PWM off-time versus external Schottky solutions. |
Use Scenario: Primary-side switch in auxiliary 400 V → 12 V flyback converter powering OBC control logic and gate drivers. IC Role / Device Role / Timing Role: 80 V-rated switch handling reflected output voltage spikes and leakage inductance energy during MOSFET turn-off. Use Value: 61 mJ EAS rating absorbs leakage energy without snubber, simplifying layout and reducing component count in space-constrained OBC modules. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6F7AG | 60 V rating, 2.2 mΩ RDS(on) @ 10 V, PowerFLAT 5x6 package, RthJC = 1.5 °C/W | Limited to 60 V systems; superior thermal performance but lower voltage margin for transients | Select when 60 V max system voltage suffices and lowest possible RthJC is prioritized over voltage headroom |
| IRFH7185TRPBF | 75 V rating, 5.2 mΩ RDS(on) @ 10 V, PQFN 5x6 mm, RthJC = 1.8 °C/W, no AEC-Q101 qualification | Not AEC-Q101 qualified; higher gate charge (85 nC) increases driver loss in high-frequency designs | Use only in non-automotive industrial applications where qualification is not required and 75 V rating meets system needs |
Compared with STL220N6F7AG and IRFH7185TRPBF, SQJA80EP-T1_BE3 uniquely balances 80 V voltage margin, AEC-Q101 qualification, and 2.2 °C/W thermal resistance in a cost-effective PowerPAK SO-8L footprint - making it optimal for 12 V/48 V hybrid vehicle subsystems requiring long-term reliability under thermal stress.
Availability
SQJA80EP-T1_BE3 is available at Aetrix Electronics and suitable for electric power steering, automotive DC-DC conversion, and engine cooling fan control requiring stable component supply across extended temperature and lifetime requirements.
Supply support for SQJA80EP-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJA80EP-T1_BE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-current, high-temperature under-hood applications demanding AEC-Q101 reliability and low RDS(on) × Qg figures of merit.
FAQ
What is the maximum continuous drain current rating for SQJA80EP-T1_BE3 at 125 °C case temperature?
The SQJA80EP-T1_BE3 supports 39 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK SO-8L package and ensures safe operation in high-ambient under-hood environments where PCB copper area and airflow constrain heat dissipation. The 60 A rating applies only at TC = 25 °C.
Does SQJA80EP-T1_BE3 require a gate driver IC for automotive 12 V motor control applications?
SQJA80EP-T1_BE3 can be driven directly by 5 V microcontrollers in low-frequency PWM applications due to its 1.5–2.5 V gate threshold and 10.0 mΩ RDS(on) at VGS = 4.5 V. However, for 20–100 kHz motor control with fast switching and low EMI, a dedicated gate driver (e.g., TC4427A) is recommended to deliver full 10 V gate voltage and sink/source the 40–75 nC total gate charge efficiently.
How is thermal performance validated for SQJA80EP-T1_BE3 in automotive PCB layouts?
Thermal resistance values for SQJA80EP-T1_BE3 - including RthJC = 2.2 °C/W and RthJA = 68 °C/W - are measured per JEDEC JESD51-14 on a 1" × 1" FR4 PCB with 2 oz. copper on both sides. For production automotive layouts, Vishay recommends using ≥ 200 mm² exposed drain copper connected to internal ground planes via ≥ 6 thermal vias (0.3 mm diameter) to achieve the specified RthJC.
Is SQJA80EP-T1_BE3 suitable for reverse polarity protection in 48 V battery systems?
Yes - SQJA80EP-T1_BE3 supports 80 V drain-source blocking, providing 20 V margin above nominal 48 V battery rails and accommodating load dump transients up to 65 V per ISO 7637-2. Its 175 °C junction rating and AEC-Q101 qualification make it suitable for front-end reverse polarity switches in 48 V mild-hybrid ECUs, provided gate drive remains referenced to source and body diode conduction is avoided during fault conditions.
What does "100 % UIS tested" mean for SQJA80EP-T1_BE3, and how is it applied in motor drive designs?
"100 % UIS tested" means every SQJA80EP-T1_BE3 unit undergoes unclamped inductive switching validation at IAS = 35 A, L = 0.1 mH, confirming ability to absorb 61 mJ avalanche energy without failure. In motor drive designs, this ensures survivability during sudden current interruption - such as emergency brake commands or phase loss - where back-EMF induces high-voltage spikes across the MOSFET drain-source terminals.
SQJA80EP-T1_BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 7mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 75 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3800 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 68W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJA80EP-T1_BE3 FAQ
1.How can I place an order for SQJA80EP-T1_BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJA80EP-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJA80EP-T1_BE3 reliable?
The price and inventory of SQJA80EP-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJA80EP-T1_BE3 is usually 5 days.
3.What payment methods are accepted for SQJA80EP-T1_BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJA80EP-T1_BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJA80EP-T1_BE3?
SQJA80EP-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJA80EP-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJA80EP-T1_BE3?
For technical support, including SQJA80EP-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJA80EP-T1_BE3 requirements.
6.How does Aetrix verify that SQJA80EP-T1_BE3 is sourced from the original manufacturer or authorized distributors?
All SQJA80EP-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJA80EP-T1_BE3 meets industry standards.
7.What is the process for return or replacement of SQJA80EP-T1_BE3?
All SQJA80EP-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJA80EP-T1_BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJA80EP-T1_BE3 part is unused and in its original packaging.
Return procedure for SQJA80EP-T1_BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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