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Vishay Siliconix SQJA82EP-T1_BE3
- Part No.:
- SQJA82EP-T1_BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJA82EP-T1_BE3.pdf
- Description:
- N-CHANNEL 80-V (D-S) 175C MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:3,000
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Product details
Overview
SQJA82EP-T1_BE3 from Vishay Siliconix is an automotive-grade N-channel 80 V MOSFET in PowerPAK® SO-8L package, rated for 60 A continuous drain current at TC = 25 °C, with RDS(on) = 8.2 mΩ at VGS = 10 V and 11.2 mΩ at VGS = 4.5 V, operating up to +175 °C junction temperature - used in high-efficiency 12 V/24 V automotive power distribution and motor control circuits.
For engineers reviewing the SQJA82EP-T1_BE3 datasheet, SQJA82EP-T1_BE3 pinout, SQJA82EP-T1_BE3 application, or SQJA82EP-T1_BE3 equivalent, this page delivers verified thermal resistance (RthJC = 2.2 °C/W), avalanche energy rating (EAS = 62 mJ), AEC-Q101 qualification status, gate charge (Qg = 40–60 nC), and body diode recovery characteristics (trr = 54–110 ns) critical for robust high-side switching design.
Technical Context
This MOSFET employs TrenchFET® technology to achieve low on-resistance and fast switching with controlled gate charge (Qg = 40–60 nC, Qgd = 5.5 nC). Its 80 V VDS rating supports 24 V commercial vehicle systems and 48 V mild-hybrid architectures while maintaining safe SOA margins under pulse conditions (IDM = 120 A).
The device integrates a robust intrinsic body diode (VSD = 0.81–1.2 V at IF = 10 A) with measured reverse recovery time (trr = 54–110 ns) and charge (Qrr = 80–160 nC), enabling reliable synchronous rectification and freewheeling in brushed DC motor drivers and solenoid control modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 80 V - Supports 24 V battery systems with 3× safety margin against load dump transients. |
| RDS(on) | 8.2 mΩ @ VGS = 10 V - Enables <1 W conduction loss at 40 A, reducing thermal stress in compact PCB layouts. |
| ID (cont.) | 60 A @ TC = 25 °C - Delivers high-current capability without external heatsinking in surface-mount power stages. |
| EAS | 62 mJ - Withstands single-pulse inductive energy from 0.1 mH loads, eliminating need for external snubbers. |
| RthJC | 2.2 °C/W - Allows direct thermal coupling to copper planes or metal-core PCBs for efficient heat extraction. |
| TJ max | +175 °C - Qualified for under-hood automotive environments including engine control units and transmission modules. |
| AEC-Q101 | Qualified - Meets stress test requirements for automotive electronics per JESD22 and JESD47 standards. |
Pinout & Package
PowerPAK® SO-8L single-die package: 5.13 mm × 6.15 mm footprint, 1.07 mm height, leadless construction with exposed copper drain pad on bottom side; optimized for high-current routing and thermal transfer via PCB copper fill.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (S) | Source | Four parallel source terminals reduce parasitic inductance and improve current sharing in high-di/dt switching. |
| 5 (G) | Gate | Single gate input with Rg = 0.2–0.65 Ω - enables fast turn-on/turn-off (td(on) = 14–25 ns) using standard gate drivers. |
| 6, 7, 8 (D) | Drain | Three drain terminals connected to large bottom-side copper pad - provides low-inductance path to ground plane and thermal interface. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® structure | Enables ultra-low RDS(on) and high cell density for compact 80 V switching in automotive space-constrained modules. |
| 100 % Rg and UIS tested | Ensures gate robustness and unclamped inductive switching reliability across full production lot - no screening failures. |
| Exposed drain pad | Provides direct thermal path to PCB copper, achieving RthJC = 2.2 °C/W - critical for sustained 60 A operation. |
| Body diode trr & Qrr | 54–110 ns trr and 80–160 nC Qrr - supports efficient freewheeling in H-bridge motor drives without external diodes. |
| Lead (Pb)-free & halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709E - suitable for global automotive supply chain requirements. |
Applications
| Engine Control Unit (ECU) Power Stage | Electric Power Steering (EPS) Motor Driver |
|---|---|
Use Scenario: High-side switch for fuel injector or ignition coil driver in gasoline/diesel ECUs. IC Role / Device Role / Timing Role: Primary power switch controlling 12 V/24 V inductive loads with precise PWM timing. Use Value: 80 V VDS and 62 mJ EAS withstand load dump and inductive kickback without clamping components. |
Use Scenario: Half-bridge leg in 12 V EPS motor control module driving brushed DC assist motor. IC Role / Device Role / Timing Role: Low-side or high-side switching element in bidirectional H-bridge topology. Use Value: 11.2 mΩ RDS(on) at 4.5 V ensures full enhancement from automotive logic-level gate drivers. |
| 48 V Mild-Hybrid DC-DC Converter | Commercial Vehicle HVAC Blower Control |
Use Scenario: Synchronous rectifier in 48 V–12 V bidirectional buck-boost converter for energy recovery. IC Role / Device Role / Timing Role: Secondary-side power switch leveraging low Qrr (80–160 nC) for ZVS operation. Use Value: Body diode trr = 54–110 ns enables clean commutation with minimal voltage overshoot during dead-time. |
Use Scenario: PWM-controlled blower motor driver in Class 8 truck HVAC systems operating at 24 V. IC Role / Device Role / Timing Role: High-current power switch handling 40–60 A peak loads with thermal derating. Use Value: +175 °C TJ rating and AEC-Q101 qualification ensure reliability in under-dash high-temperature zones. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 80 V automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXTH80N10L2 | 100 V VDS, TO-247 package, RDS(on) = 9.5 mΩ @ 10 V, RthJC = 0.45 °C/W - higher voltage margin but larger footprint and slower switching (Qg = 120 nC). | Preferred for industrial UPS or solar inverters requiring >80 V headroom; unsuitable for space-constrained automotive PCBs. | Select only when 100 V rating and through-hole mounting are mandatory; not drop-in compatible with SQJA82EP-T1_BE3 layout. |
| STL220N8F7 | 80 V VDS, PowerFLAT 5x6 package, RDS(on) = 1.7 mΩ @ 10 V, RthJC = 1.5 °C/W - lower RDS(on) but requires tighter gate drive control due to lower VGS(th) (1.0–2.0 V). | Better suited for high-frequency (>100 kHz) DC-DC converters where conduction loss dominates; less tolerant of gate noise. | Consider when minimizing conduction loss is primary goal and gate drive stability can be guaranteed; different pinout and thermal pad geometry. |
Compared with IXTH80N10L2 and STL220N8F7, SQJA82EP-T1_BE3 offers balanced trade-offs: industry-standard PowerPAK SO-8L footprint, AEC-Q101 validation, and proven 175 °C operation - making it optimal for volume automotive power modules where layout reuse, qualification traceability, and thermal predictability are critical.
Availability
SQJA82EP-T1_BE3 is available at Aetrix Electronics and suitable for automotive power distribution, electric power steering (EPS), and 48 V mild-hybrid DC-DC converter designs requiring stable component supply and long-term lifecycle support.
Supply support for SQJA82EP-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJA82EP-T1_BE3 belongs to Vishay's TrenchFET® automotive MOSFET product line, engineered specifically for high-reliability 12 V/24 V/48 V power switching in engine bays, chassis modules, and ADAS subsystems.
FAQ
What is the maximum continuous drain current rating for SQJA82EP-T1_BE3 at 125 °C case temperature?
The SQJA82EP-T1_BE3 supports 36 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK SO-8L package and ensures safe operation in high-ambient under-hood environments. The device maintains RDS(on) ≤ 13.4 mΩ at this condition, preserving efficiency in thermally constrained automotive modules.
Is SQJA82EP-T1_BE3 qualified to AEC-Q101, and what does that cover?
Yes, SQJA82EP-T1_BE3 is fully AEC-Q101 qualified. This certification covers stress tests including high-temperature operating life (HTOL), temperature cycling (TC), highly accelerated stress test (HAST), and unclamped inductive switching (UIS), confirming reliability for automotive under-hood applications. The qualification applies to the exact SQJA82EP-T1_BE3 variant and is documented in Vishay's official compliance reports.
What is the gate threshold voltage range for SQJA82EP-T1_BE3, and how does it affect drive compatibility?
The gate threshold voltage (VGS(th)) for SQJA82EP-T1_BE3 is 1.5–2.5 V at ID = 250 μA. This range ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers while maintaining noise immunity. At VGS = 4.5 V, the device achieves RDS(on) = 11.2 mΩ - confirming full enhancement in 12 V automotive systems using common microcontroller outputs or dedicated gate drivers like the UCC27531.
Does SQJA82EP-T1_BE3 include an integrated body diode, and what are its key recovery parameters?
Yes, SQJA82EP-T1_BE3 features an integrated body diode with forward voltage VSD = 0.81–1.2 V at IF = 10 A and reverse recovery time trr = 54–110 ns at di/dt = 100 A/μs. Its Qrr is 80–160 nC, enabling predictable freewheeling behavior in half-bridge and synchronous rectifier topologies without requiring external Schottky diodes in many automotive motor control applications.
What is the thermal resistance from junction to case (RthJC) for SQJA82EP-T1_BE3, and how should it be used in layout design?
The junction-to-case thermal resistance (RthJC) of SQJA82EP-T1_BE3 is 2.2 °C/W, measured from die junction to the exposed drain pad on the bottom of the PowerPAK SO-8L package. To realize this value, the PCB must incorporate ≥100 % copper fill on the bottom layer beneath the device, with thermal vias connecting to internal or backside ground planes - per Vishay's recommended pad pattern (Doc #63818).
SQJA82EP-T1_BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8.2mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 60 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3000 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 68W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJA82EP-T1_BE3 FAQ
1.How can I place an order for SQJA82EP-T1_BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJA82EP-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJA82EP-T1_BE3 reliable?
The price and inventory of SQJA82EP-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJA82EP-T1_BE3 is usually 5 days.
3.What payment methods are accepted for SQJA82EP-T1_BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJA82EP-T1_BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJA82EP-T1_BE3?
SQJA82EP-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJA82EP-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJA82EP-T1_BE3?
For technical support, including SQJA82EP-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJA82EP-T1_BE3 requirements.
6.How does Aetrix verify that SQJA82EP-T1_BE3 is sourced from the original manufacturer or authorized distributors?
All SQJA82EP-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJA82EP-T1_BE3 meets industry standards.
7.What is the process for return or replacement of SQJA82EP-T1_BE3?
All SQJA82EP-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJA82EP-T1_BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJA82EP-T1_BE3 part is unused and in its original packaging.
Return procedure for SQJA82EP-T1_BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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