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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQJA82EP-T1_GE3

Name: SQJA82EP-T1_GE3
Brand: Vishay Siliconix
SKU: SQJA82EP-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQJA82EP-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SQJA82EP-T1_GE3.pdf

Description:: MOSFET N-CH 80V 60A PPAK SO-8

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Product details

Overview

SQJA82EP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 80 V (D–S), 60 A continuous drain current at TC = 25 °C, and 175 °C maximum junction temperature. It features RDS(on) of 8.2 mΩ at VGS = 10 V and 11.2 mΩ at VGS = 4.5 V, housed in a PowerPAK® SO-8L leadless package, and is AEC-Q101 qualified for under-hood motor control and DC-DC converter applications.

For engineers reviewing the SQJA82EP-T1_GE3 datasheet, SQJA82EP-T1_GE3 pinout, SQJA82EP-T1_GE3 application, or SQJA82EP-T1_GE3 equivalent, this page delivers verified electrical parameters, thermal performance data, PCB mounting guidance for the PowerPAK SO-8L footprint, and validated alternative options for high-reliability automotive power switching designs.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with Qg = 40–60 nC and Qgd = 5.5 nC at VGS = 10 V, VDS = 40 V, ID = 5 A. Its 100 % Rg and UIS tested construction ensures robustness against gate resistance variation and unclamped inductive switching stress in automotive transients.

The device operates across –55 °C to +175 °C junction temperature range and delivers 62 mJ single-pulse avalanche energy (IAS = 35 A, L = 0.1 mH). Thermal resistance is specified as RthJC = 2.2 °C/W (junction-to-case) and RthJA = 68 °C/W (junction-to-ambient, PCB mount), enabling high-power density layout in space-constrained modules.

Key Specifications

Parameter	Value and Actual Design Meaning
VDS	80 V - Maximum drain-source blocking voltage; supports 48 V system bus with 2× safety margin for load dump transients.
RDS(on) @ 10 V	8.2 mΩ - Low conduction loss enables <1 W dissipation at 40 A, critical for thermally constrained engine control units.
ID (continuous)	60 A at TC = 25 °C - Sustains high-current motor phase switching without external heatsinking in compact packages.
Qg / Qgd	40–60 nC / 5.5 nC - Enables efficient gate drive with <1 W driver power at 100 kHz PWM, reducing gate driver IC selection burden.
TJ max	+175 °C - Qualified for under-hood environments including transmission control modules and battery disconnect units.
AEC-Q101	Qualified - Meets automotive reliability requirements for temperature cycling, HTRB, and UHAST, supporting ASIL-B system integration.
EAS	62 mJ - Withstands repetitive inductive turn-off energy in solenoid drivers and BLDC motor freewheeling without failure.

Pinout & Package

Package: PowerPAK® SO-8L (leadless, surface-mount), dimensions 5.13 mm × 6.15 mm × 1.07 mm (D × E × A), with exposed copper drain paddle on bottom side for enhanced thermal transfer.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 7, 8	Source (S)	Common source connection; pins 1/2/3/4/7/8 are internally tied to source metallization and provide low-inductance return path.
5	Gate (G)	Single gate input; requires ≤20 V gate drive; Rg = 0.43 Ω typical ensures stable Miller immunity during high di/dt switching.
6	Drain (D)	Main power output terminal; connected to exposed copper paddle on bottom; primary thermal and current path to PCB copper plane.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 8.2 mΩ RDS(on) at 10 V in SO-8L footprint-enables higher current density than planar MOSFETs in same package.
100 % Rg and UIS tested	Guarantees gate resistance consistency and ruggedness against inductive kickback in motor drive and solenoid circuits.
PowerPAK SO-8L leadless design	Reduces parasitic inductance by 40 % vs. standard SO-8; improves EMI performance and dV/dt immunity in high-speed switching.
Body diode trr = 54–110 ns	Enables synchronous rectification in bidirectional DC-DC converters with minimal reverse recovery loss and voltage overshoot.
175 °C TJ rating	Supports operation in high-temperature zones (e.g., near exhaust manifolds or inverters) without derating below 125 °C ambient.

Applications

Electric Power Steering (EPS)	48 V Mild Hybrid DC-DC Converter
Use Scenario: High-efficiency three-phase inverter driving brushless steering motor with peak currents up to 55 A. IC Role / Device Role / Timing Role: Low-side switching element in half-bridge configuration; handles commutation at 20–40 kHz with <25 ns fall time. Use Value: 8.2 mΩ RDS(on) minimizes conduction loss at 40 A, while 175 °C rating allows direct mounting on aluminum housing without thermal interface material.	Use Scenario: Primary-side synchronous rectifier in isolated bidirectional buck-boost converter linking 48 V and 12 V domains. IC Role / Device Role / Timing Role: High-frequency (100–200 kHz) power switch with body diode conducting freewheeling current during dead time. Use Value: 54–110 ns trr and 0.81–1.2 V VSD ensure low reverse recovery loss and reduced voltage spike, improving efficiency by >1.2 % over standard MOSFETs.
Automotive HVAC Blower Control	On-Board Charger (OBC) Auxiliary Supply
Use Scenario: PWM-controlled DC motor driver for cabin air blower, operating continuously at 30–45 A with ambient up to 105 °C. IC Role / Device Role / Timing Role: Single N-channel switch in high-side or low-side configuration; driven by isolated gate driver with 10 V logic level. Use Value: AEC-Q101 qualification and 100 % UIS testing ensure field reliability over 15-year vehicle lifetime despite frequent start-stop cycles and vibration exposure.	Use Scenario: Primary switch in auxiliary flyback converter supplying 5 V/3 A control rail for OBC gate drivers and MCU. IC Role / Device Role / Timing Role: 80 V-rated switch handling reflected 400 V bus spikes during line transients; operates at 65 kHz with <14 ns turn-on delay. Use Value: 80 V VDS rating provides 5× margin over 16 V reflected voltage, eliminating need for snubbers and reducing BOM count by one component.

Electric Power Steering (EPS)

48 V Mild Hybrid DC-DC Converter

Use Scenario: High-efficiency three-phase inverter driving brushless steering motor with peak currents up to 55 A.

IC Role / Device Role / Timing Role: Low-side switching element in half-bridge configuration; handles commutation at 20–40 kHz with <25 ns fall time.

Use Value: 8.2 mΩ RDS(on) minimizes conduction loss at 40 A, while 175 °C rating allows direct mounting on aluminum housing without thermal interface material.

Use Scenario: Primary-side synchronous rectifier in isolated bidirectional buck-boost converter linking 48 V and 12 V domains.

IC Role / Device Role / Timing Role: High-frequency (100–200 kHz) power switch with body diode conducting freewheeling current during dead time.

Use Value: 54–110 ns trr and 0.81–1.2 V VSD ensure low reverse recovery loss and reduced voltage spike, improving efficiency by >1.2 % over standard MOSFETs.

Automotive HVAC Blower Control

On-Board Charger (OBC) Auxiliary Supply

Use Scenario: PWM-controlled DC motor driver for cabin air blower, operating continuously at 30–45 A with ambient up to 105 °C.

IC Role / Device Role / Timing Role: Single N-channel switch in high-side or low-side configuration; driven by isolated gate driver with 10 V logic level.

Use Value: AEC-Q101 qualification and 100 % UIS testing ensure field reliability over 15-year vehicle lifetime despite frequent start-stop cycles and vibration exposure.

Use Scenario: Primary switch in auxiliary flyback converter supplying 5 V/3 A control rail for OBC gate drivers and MCU.

IC Role / Device Role / Timing Role: 80 V-rated switch handling reflected 400 V bus spikes during line transients; operates at 65 kHz with <14 ns turn-on delay.

Use Value: 80 V VDS rating provides 5× margin over 16 V reflected voltage, eliminating need for snubbers and reducing BOM count by one component.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7AG	RDS(on) = 1.9 mΩ @ 10 V (lower), but 60 V VDS rating; PowerFLAT 5x6 package; RthJA = 50 °C/W (better).	Not suitable for 80 V systems; limited to 48 V architectures; higher current capability may require larger gate driver.	Select when 60 V rating suffices and lower conduction loss is prioritized over voltage margin.
IRFH8326TRPBF	RDS(on) = 7.0 mΩ @ 10 V; 75 V VDS; PQFN 5x6 mm; Qg = 42 nC; AEC-Q101 qualified.	Lower voltage rating limits use in 80 V transient-prone systems; slightly faster switching (tr = 4.5 ns) but higher Ciss (2500 pF).	Choose for cost-sensitive 48 V applications where 75 V margin is acceptable and faster rise time improves light-load efficiency.

Compared with STL220N6F7AG and IRFH8326TRPBF, SQJA82EP-T1_GE3 uniquely balances 80 V rating, 175 °C operation, and AEC-Q101 compliance in a compact PowerPAK SO-8L-making it the only option among the three qualified for 80 V automotive systems requiring extended temperature operation without derating.

Availability

SQJA82EP-T1_GE3 is available at Aetrix Electronics and suitable for electric power steering, 48 V mild hybrid DC-DC conversion, and automotive HVAC blower control requiring stable component supply across long production lifecycles.

Supply support for SQJA82EP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQJA82EP-T1_GE3 belongs to Vishay's automotive-qualified TrenchFET® PowerPAK SO-8L family, engineered specifically for high-current, high-temperature switching in engine bay and powertrain modules.

FAQ

What is the maximum continuous drain current rating for SQJA82EP-T1_GE3 at 125 °C case temperature?

The SQJA82EP-T1_GE3 supports 36 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK SO-8L package and ensures reliable operation in high-ambient under-hood environments. The SQJA82EP-T1_GE3 maintains RDS(on) ≤ 13.4 mΩ at this condition, preserving low conduction loss even at elevated temperatures.

Is SQJA82EP-T1_GE3 suitable for synchronous rectification in a 48 V to 12 V DC-DC converter?

Yes, SQJA82EP-T1_GE3 is well-suited for synchronous rectification due to its low RDS(on) of 8.2 mΩ at 10 V, fast body diode recovery (trr = 54–110 ns), and low Qrr (80–160 nC). In a 48 V to 12 V buck converter operating at 100–200 kHz, the SQJA82EP-T1_GE3 reduces conduction and recovery losses versus Schottky alternatives, especially at high load currents above 20 A.

Does SQJA82EP-T1_GE3 require special rework considerations due to its leadless package?

Yes-SQJA82EP-T1_GE3 uses a leadless PowerPAK SO-8L package with exposed copper drain paddle. Manual soldering with a soldering iron is not recommended. Reflow profiling per Vishay document 73257 is required, and rework must use precision hot-air stations with controlled ramp rates and dwell times to avoid delamination or voiding under the thermal pad. The SQJA82EP-T1_GE3 datasheet explicitly warns against hand-soldering.

What is the gate threshold voltage range for SQJA82EP-T1_GE3, and how does it impact 4.5 V logic-level drive?

The SQJA82EP-T1_GE3 has a gate threshold voltage VGS(th) of 1.5–2.5 V, ensuring reliable turn-on with 4.5 V gate drive. At VGS = 4.5 V, it achieves RDS(on) = 11.2 mΩ (typical), making it compatible with standard 5 V microcontrollers and gate drivers. This low threshold enables full enhancement without level-shifting, and the SQJA82EP-T1_GE3 maintains stable switching behavior across –55 °C to +175 °C.

How is the thermal performance of SQJA82EP-T1_GE3 validated for PCB-mounted applications?

SQJA82EP-T1_GE3 thermal ratings-including RthJA = 68 °C/W-are validated on a 1" × 1" FR4 PCB with 2 oz. copper on both sides (100 % coverage). This standardized test board enables accurate thermal modeling in real layouts. The SQJA82EP-T1_GE3's exposed drain paddle directly interfaces with inner-layer copper planes, and its RthJC = 2.2 °C/W allows precise junction temperature estimation when heatsinking is applied to the PCB backside.

SQJA82EP-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.2mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3000 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 68W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SQJA82EP-T1_GE3 FAQ

1.How can I place an order for SQJA82EP-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQJA82EP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQJA82EP-T1_GE3 reliable?

The price and inventory of SQJA82EP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJA82EP-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQJA82EP-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJA82EP-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQJA82EP-T1_GE3?

SQJA82EP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQJA82EP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQJA82EP-T1_GE3?

For technical support, including SQJA82EP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJA82EP-T1_GE3 requirements.

6.How does Aetrix verify that SQJA82EP-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQJA82EP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJA82EP-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQJA82EP-T1_GE3?

All SQJA82EP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJA82EP-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQJA82EP-T1_GE3 part is unused and in its original packaging.

Return procedure for SQJA82EP-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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