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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQJA86EP-T1_BE3

Name: SQJA86EP-T1_BE3
Brand: Vishay Siliconix
SKU: SQJA86EP-T1_BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQJA86EP-T1_BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8 Dual

Datasheet:: SQJA86EP-T1_BE3.pdf

Description:: N-CHANNEL 80-V (D-S) 175C MOSFET

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Product details

Overview

SQJA86EP-T1_BE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 80 V drain-source voltage, 30 A continuous drain current at 25 °C, and 175 °C maximum junction temperature. It features 19 mΩ R_DS(on) at V_GS = 10 V and 24 mΩ at 4.5 V, housed in a leadless PowerPAK® SO-8L package, and is qualified to AEC-Q101 for under-hood motor control and DC-DC converter applications.

For engineers reviewing the SQJA86EP-T1_BE3 datasheet, SQJA86EP-T1_BE3 pinout, SQJA86EP-T1_BE3 application, or SQJA86EP-T1_BE3 equivalent, key selection criteria include its 175 °C operation capability, 100 % R_g and UIS testing, low gate charge (20–32 nC), and thermal resistance of 3.1 °C/W junction-to-case - critical for high-reliability automotive power stages.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction and switching losses in high-temperature automotive environments. Its gate threshold voltage (1.5–2.5 V) enables robust drive compatibility with 3.3 V and 5 V controllers, while the body diode exhibits 38–80 ns reverse recovery time and 43–100 nC Q_rr, supporting synchronous rectification and freewheeling in buck converters.

The device operates within a -55 °C to +175 °C junction temperature range and delivers 48 W maximum power dissipation at T_C = 25 °C. Its normalized R_DS(on) vs. temperature curve shows <2.5× increase from 25 °C to 175 °C, ensuring predictable on-resistance behavior across full automotive thermal extremes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Supports 48 V battery systems with margin for load dump transients up to ISO 7637-2 Pulse 5a.
R_DS(on) @ V_GS = 10 V	0.0190 Ω - Enables ≤0.57 W conduction loss at 30 A, reducing heatsink requirements in space-constrained modules.
R_DS(on) @ V_GS = 4.5 V	0.0240 Ω - Ensures stable on-state performance with standard 5 V logic-level gate drivers without level-shifting.
Q_g	20–32 nC - Balances fast switching (t_d(on) = 10–20 ns, t_f = 24–40 ns) with gate driver current demand ≤3.2 A peak.
T_J(max)	+175 °C - Certified for under-hood placement in engine control units, transmission control modules, and e-powertrain inverters.
R_thJC	3.1 °C/W - Allows direct thermal coupling to metal-core PCBs or heatsinks, enabling >30 W sustained power handling with minimal ΔT.
AEC-Q101	Qualified - Validated for automotive use per stress test requirements including HTRB, H3TRB, TC, UHAST, and ESD (HBM ≥2 kV).

Pinout & Package

Package: PowerPAK® SO-8L (leadless, dual-side thermal pad), dimensions 5.13 mm × 6.15 mm × 1.07 mm (D × E × A), with exposed copper drain paddle on bottom side for enhanced thermal transfer.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 7, 8 (Drain pads)	Drain (D)	Multiple parallel drain terminals connected to internal die source metallization and bottom thermal pad - must be soldered to large copper pour for thermal and current capacity.
5 (Gate)	Gate (G)	Single gate input terminal; low R_g (0.23–0.8 Ω) minimizes Miller effect and supports clean turn-on/turn-off with moderate gate resistance.
6 (Source)	Source (S)	Source reference node; tied internally to substrate and used as return path for gate drive and load current - requires low-inductance layout to ground plane.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers industry-leading R_DS(on) × Q_g figure-of-merit (≤0.61 Ω·nC), reducing total switching + conduction losses in 100–500 kHz DC-DC stages.
100 % R_g and UIS tested	Each unit verified for gate resistance consistency and unclamped inductive switching ruggedness - eliminates field failures from avalanche overstress in motor phase-legs.
PowerPAK SO-8L package	Leadless construction reduces parasitic inductance by >30 % vs. SO-8, improves thermal resistance by 40 %, and enables 2× current density in same footprint.
Body diode with low Q_rr	43–100 nC reverse recovery charge supports efficient synchronous rectification and reduces EMI during hard commutation in half-bridge topologies.
175 °C operation	Enables placement adjacent to power inductors or MOSFETs in compact power modules without derating - validated over full temperature cycle life.

Applications

Engine Control Unit (ECU) Fuel Injector Driver	48 V DC-DC Converter Primary Switch
Use Scenario: High-speed, high-current switching of solenoid fuel injectors in gasoline direct injection systems operating at ambient up to 150 °C. IC Role / Device Role / Timing Role: Low-side N-channel switch controlling injector coil current with precise pulse-width modulation at 1–10 kHz. Use Value: 175 °C rating ensures reliability without forced air cooling; 24 mΩ R_DS(on) at 4.5 V allows direct drive from MCU GPIO, eliminating external level shifters.	Use Scenario: Primary-side synchronous rectifier in isolated bidirectional 48 V–12 V DC-DC converters for mild hybrid vehicles. IC Role / Device Role / Timing Role: High-efficiency power switch in hard-switched buck-boost topology with 200–300 kHz switching frequency. Use Value: Low Q_g and Q_rr reduce switching losses by ~18 % vs. legacy MOSFETs; 3.1 °C/W R_thJC enables >95 % efficiency at 5 kW/cm³ power density.
Electric Power Steering (EPS) Motor Phase Leg	On-Board Charger (OBC) Input Stage Switch
Use Scenario: Half-bridge leg in three-phase inverter driving brushless DC assist motor, subject to vibration, humidity, and thermal cycling. IC Role / Device Role / Timing Role: High-side or low-side switching element in 60–100 kHz PWM-controlled inverter with active short-circuit protection. Use Value: AEC-Q101 qualification guarantees lifetime reliability; 84 A pulsed drain current handles torque surge peaks without desaturation.	Use Scenario: Active clamp or input bridge switch in 6.6 kW OBC AC-DC front-end, operating continuously at 85 °C ambient. IC Role / Device Role / Timing Role: Fast-turning power switch managing line-frequency rectified input with zero-voltage switching assistance. Use Value: 80 V V_DS withstands 600 VAC surge clamping; 0.019 Ω R_DS(on) limits conduction loss to <1.7 W at 30 A RMS, easing thermal management.

Engine Control Unit (ECU) Fuel Injector Driver

48 V DC-DC Converter Primary Switch

Use Scenario: High-speed, high-current switching of solenoid fuel injectors in gasoline direct injection systems operating at ambient up to 150 °C.

IC Role / Device Role / Timing Role: Low-side N-channel switch controlling injector coil current with precise pulse-width modulation at 1–10 kHz.

Use Value: 175 °C rating ensures reliability without forced air cooling; 24 mΩ R_DS(on) at 4.5 V allows direct drive from MCU GPIO, eliminating external level shifters.

Use Scenario: Primary-side synchronous rectifier in isolated bidirectional 48 V–12 V DC-DC converters for mild hybrid vehicles.

IC Role / Device Role / Timing Role: High-efficiency power switch in hard-switched buck-boost topology with 200–300 kHz switching frequency.

Use Value: Low Q_g and Q_rr reduce switching losses by ~18 % vs. legacy MOSFETs; 3.1 °C/W R_thJC enables >95 % efficiency at 5 kW/cm³ power density.

Electric Power Steering (EPS) Motor Phase Leg

On-Board Charger (OBC) Input Stage Switch

Use Scenario: Half-bridge leg in three-phase inverter driving brushless DC assist motor, subject to vibration, humidity, and thermal cycling.

IC Role / Device Role / Timing Role: High-side or low-side switching element in 60–100 kHz PWM-controlled inverter with active short-circuit protection.

Use Value: AEC-Q101 qualification guarantees lifetime reliability; 84 A pulsed drain current handles torque surge peaks without desaturation.

Use Scenario: Active clamp or input bridge switch in 6.6 kW OBC AC-DC front-end, operating continuously at 85 °C ambient.

IC Role / Device Role / Timing Role: Fast-turning power switch managing line-frequency rectified input with zero-voltage switching assistance.

Use Value: 80 V V_DS withstands 600 VAC surge clamping; 0.019 Ω R_DS(on) limits conduction loss to <1.7 W at 30 A RMS, easing thermal management.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTP80N10P	TO-220 package, 100 V V_DS, 11.5 mΩ R_DS(on) @ 10 V, no AEC-Q101 qualification	Higher R_thJA (62 °C/W), unsuitable for sealed enclosures or high ambient temperatures	Select only for non-automotive industrial designs where board space and thermal interface are unconstrained.
STL220N6LF8AG	PowerFLAT 5x6 package, 60 V V_DS, 1.2 mΩ R_DS(on) @ 10 V, AEC-Q101 qualified	Lower voltage rating limits use to 24 V systems; higher current rating (220 A) exceeds SQJA86EP-T1_BE3's 30 A per leg	Prefer for 24 V EPS or HVAC blower drives requiring ultra-low R_DS(on); not drop-in for 48 V or 80 V applications.

Compared with IXTP80N10P and STL220N6LF8AG, the SQJA86EP-T1_BE3 uniquely balances 80 V rating, AEC-Q101 compliance, 175 °C operation, and PowerPAK SO-8L thermal performance - making it the optimal choice for space- and temperature-constrained 48 V automotive power stages where reliability and efficiency are co-prioritized.

Availability

SQJA86EP-T1_BE3 is available at Aetrix Electronics and suitable for engine control units, 48 V DC-DC converters, and electric power steering systems requiring stable component supply across extended production lifecycles.

Supply support for SQJA86EP-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQJA86EP-T1_BE3 belongs to Vishay's automotive-qualified TrenchFET® PowerPAK SO-8L family, engineered specifically for high-temperature, high-reliability power switching in next-generation 48 V mild hybrid and electrified chassis systems.

FAQ

What is the maximum continuous drain current rating for SQJA86EP-T1_BE3 at 125 °C case temperature?

The SQJA86EP-T1_BE3 supports 20 A continuous drain current at T_C = 125 °C, as specified in its Absolute Maximum Ratings table. This derating from 30 A at 25 °C reflects thermal limitations of the PowerPAK SO-8L package and ensures safe operation within its 175 °C maximum junction temperature limit. Designers must verify PCB copper area and airflow to maintain T_C ≤ 125 °C under full load.

Does SQJA86EP-T1_BE3 support 3.3 V gate drive in automotive applications?

Yes, SQJA86EP-T1_BE3 has a gate threshold voltage (V_GS(th)) of 1.5–2.5 V and delivers 24 mΩ R_DS(on) at V_GS = 4.5 V, making it compatible with 3.3 V microcontrollers when paired with appropriate gate buffering. However, full 19 mΩ performance requires 10 V drive; for 3.3 V systems, confirm that the selected gate driver can supply sufficient peak current (≥2 A) to achieve fast turn-on given the 20–32 nC total gate charge of SQJA86EP-T1_BE3.

Is SQJA86EP-T1_BE3 pin-compatible with standard SO-8 MOSFETs?

No, SQJA86EP-T1_BE3 uses the leadless PowerPAK® SO-8L package, which has a different pinout and soldering profile than through-hole or gull-wing SO-8 packages. Its drain terminals occupy pins 1, 2, 3, 4, 7, and 8, gate is on pin 5, and source is on pin 6 - requiring dedicated PCB layout and reflow profile per Vishay document 73257. It is not a drop-in replacement for conventional SO-8 devices.

What is the body diode forward voltage specification for SQJA86EP-T1_BE3?

The body diode forward voltage (V_SD) of SQJA86EP-T1_BE3 is 0.84–1.2 V at I_F = 8 A and V_GS = 0 V, measured at T_J = 25 °C. This low V_SD reduces conduction loss during freewheeling in half-bridge configurations. The diode also exhibits a reverse recovery time (t_rr) of 38–80 ns and Q_rr of 43–100 nC, enabling efficient operation in high-frequency synchronous rectifiers.

How is thermal performance validated for SQJA86EP-T1_BE3 in automotive environments?

SQJA86EP-T1_BE3 thermal ratings - including R_thJC = 3.1 °C/W and R_thJA = 70 °C/W (on 1" FR4 PCB) - are validated per JEDEC JESD51 standards using calibrated transient thermal impedance measurements. Its 175 °C maximum junction temperature and AEC-Q101 qualification cover thermal cycling, high-temperature reverse bias, and unbiased high-humidity storage tests, confirming suitability for under-hood deployment where ambient exceeds 125 °C.

SQJA86EP-T1_BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: PowerPAK® SO-8 Dual

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 19mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 48W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8 Dual

SQJA86EP-T1_BE3 FAQ

1.How can I place an order for SQJA86EP-T1_BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQJA86EP-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQJA86EP-T1_BE3 reliable?

The price and inventory of SQJA86EP-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJA86EP-T1_BE3 is usually 5 days.

3.What payment methods are accepted for SQJA86EP-T1_BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJA86EP-T1_BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQJA86EP-T1_BE3?

SQJA86EP-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQJA86EP-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQJA86EP-T1_BE3?

For technical support, including SQJA86EP-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJA86EP-T1_BE3 requirements.

6.How does Aetrix verify that SQJA86EP-T1_BE3 is sourced from the original manufacturer or authorized distributors?

All SQJA86EP-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJA86EP-T1_BE3 meets industry standards.

7.What is the process for return or replacement of SQJA86EP-T1_BE3?

All SQJA86EP-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJA86EP-T1_BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQJA86EP-T1_BE3 part is unused and in its original packaging.

Return procedure for SQJA86EP-T1_BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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