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Vishay Siliconix SQJA86EP-T1_GE3
- Part No.:
- SQJA86EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJA86EP-T1_GE3.pdf
- Description:
- MOSFET N-CH 80V 30A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:5,139
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Product details
Overview
SQJA86EP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 80 V drain-source voltage, 30 A continuous drain current at 25 °C, and 0.019 Ω RDS(on) at VGS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood motor control, DC-DC converter high-side switching, and battery disconnect applications.
For engineers reviewing the SQJA86EP-T1_GE3 datasheet, SQJA86EP-T1_GE3 pinout, SQJA86EP-T1_GE3 application, or SQJA86EP-T1_GE3 equivalent, this page delivers verified electrical parameters, thermal performance data, PowerPAK SO-8L package layout, and validated alternative parts for automotive power design validation and BOM optimization.
Technical Context
This MOSFET uses trench-gate silicon technology to achieve low on-resistance and fast switching with Qg = 20 nC (typ) and tf = 24 ns (typ). Its 100 % Rg and UIS tested construction ensures robustness in inductive load switching.
The device features a single N-channel configuration in a leadless PowerPAK SO-8L package with exposed-drain thermal pad, delivering RthJC = 3.1 °C/W and RthJA = 70 °C/W (PCB mount), enabling high-power density in space-constrained automotive modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 80 V - Supports 48 V automotive systems with margin for load dump transients |
| RDS(on) @ VGS = 10 V | 0.0190 Ω - Enables ≤ 17 W conduction loss at 30 A, critical for thermally constrained ECUs |
| ID (continuous) | 30 A @ TC = 25 °C - Sustains peak motor drive currents without derating in heatsinked layouts |
| Junction temp. range | –55 °C to +175 °C - Qualified for engine bay placement per AEC-Q101 stress test conditions |
| Qg | 20 nC (typ) - Reduces gate drive power requirement and enables efficient 100 kHz+ PWM operation |
| EAS | 20 mJ - Withstands repetitive avalanche energy in unclamped inductive switching (e.g., solenoid drivers) |
| RthJC | 3.1 °C/W - Allows direct thermal coupling to metal-core PCBs or heatsinks for high-reliability thermal management |
Pinout & Package
Package: PowerPAK® SO-8L (leadless, dual-side thermal pad), dimensions 5.13 mm × 6.15 mm × 1.07 mm (D × E × A), with exposed drain terminal on bottom side for enhanced thermal dissipation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 7, 8 | Source (S) | Common source connection; pins 1/2/3/7/8 are internally bonded and electrically tied for low-inductance return path |
| 4 | Gate (G) | Control input; requires < ±20 V rating and low-impedance drive due to 0.49 Ω typical gate resistance |
| 5, 6 | Drain (D) | Main power output; pins 5/6 connect to exposed copper thermal pad-must be soldered to PCB copper pour for thermal and current handling |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use across temperature, humidity, vibration, and lifetime reliability test profiles |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency and unclamped inductive switching ruggedness-no field failures from transient overstress |
| TrenchFET® architecture | Delivers 23 % lower RDS(on) vs. planar MOSFETs at same die size, improving power density in compact modules |
| Lead (Pb)-free & halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709E, supporting green manufacturing requirements |
| Exposed-drain thermal pad | Enables 3.1 °C/W junction-to-case thermal resistance-reduces ΔT by >40 °C vs. standard SO-8 at 25 W dissipation |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | 48 V Mild Hybrid DC-DC Converter |
|---|---|
Use Scenario: High-speed switching of 12 V fuel injectors with 2 A peak current and 1 ms pulse width in engine management systems. IC Role / Device Role / Timing Role: Low-side switch controlling injector coil ground path; must sustain 100 kcycles/hour with <10 ns turn-off delay. Use Value: 24 ns fall time and 0.84 V body diode forward voltage minimize switching losses and reverse recovery energy during freewheeling. |
Use Scenario: Synchronous rectification in 48 V–12 V bidirectional buck-boost converters for regenerative braking energy recovery. IC Role / Device Role / Timing Role: High-side power switch operating at 200 kHz PWM with 100 % duty cycle capability during boost mode. Use Value: 0.024 Ω RDS(on) at 4.5 V gate drive enables efficient operation with standard 5 V logic-level controllers, reducing gate driver complexity. |
| Electric Power Steering (EPS) Motor Phase Leg | 12 V Battery Disconnect Switch |
Use Scenario: Half-bridge phase leg in 3-phase EPS motor inverters, handling 30 A RMS current with 150 °C ambient exposure. IC Role / Device Role / Timing Role: N-channel high-side switch in three-phase inverter; requires 175 °C rated junction and 84 A pulsed current capability. Use Value: 175 °C max junction temperature and 84 A pulsed drain current support sustained torque delivery during parking maneuvers without thermal shutdown. |
Use Scenario: Solid-state replacement for mechanical relays in 12 V battery main disconnect circuits for ADAS domain controllers. IC Role / Device Role / Timing Role: Single-pole power switch isolating battery from downstream loads; must withstand 100 V load dump and conduct 30 A continuously. Use Value: 80 V VDS rating with 20 mJ avalanche energy rating eliminates need for external TVS clamping during ISO 7637-2 pulse 5a events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF3710PBF | Higher RDS(on) (0.056 Ω @ 10 V), TO-220 package, no AEC-Q101 qualification | Limited to non-automotive industrial motor drives; lacks thermal performance and qualification for under-hood use | Select only for cost-sensitive non-automotive designs where 175 °C operation and AEC-Q101 are not required |
| STL220N6F7 | 60 V rating, 0.0008 Ω RDS(on), PowerFLAT 5x6 package, AEC-Q101 qualified | Better for 48 V systems but insufficient for 80 V load dump margin; smaller footprint limits heat spreading | Prefer for space-constrained 48 V applications needing ultra-low RDS(on); avoid where 80 V transient immunity is mandatory |
Compared with IRF3710PBF and STL220N6F7, SQJA86EP-T1_GE3 uniquely balances 80 V rating, AEC-Q101 compliance, 0.019 Ω on-resistance, and PowerPAK SO-8L thermal performance-making it the only drop-in option for 48 V/12 V dual-rail automotive power stages requiring full load dump immunity and 175 °C operation.
Availability
SQJA86EP-T1_GE3 is available at Aetrix Electronics and suitable for automotive power conversion, motor control, and battery management systems requiring stable component supply, long-term lifecycle assurance, and AEC-Q101-compliant sourcing.
Supply support for SQJA86EP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJA86EP-T1_GE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-temperature, high-current switching in engine control, ADAS, and electrified vehicle subsystems.
FAQ
What is the maximum continuous drain current rating for SQJA86EP-T1_GE3 at 125 °C case temperature?
The SQJA86EP-T1_GE3 supports 20 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK SO-8L package under sustained high-temperature operation, and must be applied when designing for under-hood environments without active cooling. The SQJA86EP-T1_GE3 maintains safe operation within its SOA curve up to this limit.
Does SQJA86EP-T1_GE3 require a gate resistor for reliable switching in automotive applications?
Yes-SQJA86EP-T1_GE3 benefits from an external gate resistor (typically 5–10 Ω) to dampen ringing and control dV/dt during turn-on/turn-off, especially in high-di/dt motor drive circuits. Its 0.49 Ω typical gate resistance alone is insufficient to suppress oscillation in noisy automotive harness environments. The SQJA86EP-T1_GE3 gate drive loop must be laid out with minimized inductance and local decoupling to ensure stable 100 kHz+ PWM performance.
Is SQJA86EP-T1_GE3 compatible with lead-free reflow soldering processes?
Yes-SQJA86EP-T1_GE3 is qualified for lead-free reflow with a peak temperature of 260 °C, per its soldering recommendations. The PowerPAK SO-8L package uses matte tin plating and is designed for standard JEDEC J-STD-020 profiles. Manual soldering with an iron is not recommended due to thermal mass mismatch; the SQJA86EP-T1_GE3 must be processed using controlled reflow to ensure void-free solder joints on the exposed drain pad.
How does the body diode performance of SQJA86EP-T1_GE3 impact synchronous rectifier designs?
The SQJA86EP-T1_GE3 body diode exhibits VSD = 0.84 V (typ) at 8 A and trr = 38 ns (typ), enabling efficient freewheeling in synchronous buck topologies. Its low Qrr (43 nC typ) reduces switching loss during dead-time transitions, and the SQJA86EP-T1_GE3 can operate in forced-commutation mode without external Schottky assist in 48 V–12 V DC-DC converters up to 200 kHz.
Can SQJA86EP-T1_GE3 be used in parallel configurations for higher current handling?
Yes-SQJA86EP-T1_GE3 supports paralleling due to its positive temperature coefficient of RDS(on), which promotes current sharing above 100 °C. Layout symmetry, matched gate drive paths, and individual source resistors (0.01 Ω) are required to balance dynamic current distribution. When two SQJA86EP-T1_GE3 devices are paralleled with proper thermal coupling, they deliver >50 A continuous current while maintaining <5 °C inter-die ΔT under steady-state conditions.
SQJA86EP-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 19mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 32 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1400 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 48W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJA86EP-T1_GE3 FAQ
1.How can I place an order for SQJA86EP-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJA86EP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJA86EP-T1_GE3 reliable?
The price and inventory of SQJA86EP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJA86EP-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJA86EP-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJA86EP-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJA86EP-T1_GE3?
SQJA86EP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJA86EP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJA86EP-T1_GE3?
For technical support, including SQJA86EP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJA86EP-T1_GE3 requirements.
6.How does Aetrix verify that SQJA86EP-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJA86EP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJA86EP-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJA86EP-T1_GE3?
All SQJA86EP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJA86EP-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJA86EP-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJA86EP-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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