Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQJA88EP-T1_BE3

Name: SQJA88EP-T1_BE3
Brand: Vishay Siliconix
SKU: SQJA88EP-T1_BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SQJA88EP-T1_BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SQJA88EP-T1_BE3.pdf

Description:: N-CHANNEL 40-V (D-S) 175C MOSFET

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,000

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SQJA88EP-T1_BE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET with 40 V V_DS, 7.0 mΩ R_DS(on) at 10 V V_GS, and 30 A continuous drain current, designed for high-efficiency DC-DC converters and motor control in under-hood automotive systems.

For engineers reviewing the SQJA88EP-T1_BE3 datasheet, SQJA88EP-T1_BE3 pinout, SQJA88EP-T1_BE3 application, or SQJA88EP-T1_BE3 equivalent, this device offers AEC-Q101 qualification, 175 °C junction rating, 100 % R_g and UIS testing, and PowerPAK® SO-8L leadless packaging optimized for thermal performance in space-constrained automotive modules.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with Q_g = 21 nC (typ) and t_r = 4 ns (typ), supporting high-frequency synchronous rectification in 48 V/12 V bidirectional converters. Its body diode exhibits t_rr = 44 ns (typ) and Q_rr = 42 nC (typ), enabling efficient hard-switched operation.

The device features a thermally enhanced PowerPAK® SO-8L package with exposed copper drain pad, delivering R_thJC = 3.1 °C/W and R_thJA = 70 °C/W (PCB mount), and operates across -55 °C to +175 °C junction temperature range-meeting stringent automotive thermal cycling and reliability requirements.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum drain-source blocking voltage suitable for 36 V nominal automotive battery systems with transient margin.
R_DS(on) @ 10 V	7.0 mΩ - Low conduction loss enabling >95 % efficiency in 30 A load stages at 12 V input.
I_D (continuous)	30 A - Sustained current capability per leg without derating up to T_C = 125 °C.
Q_g	21 nC (typ) - Enables fast turn-on with minimal gate drive power in 500 kHz–1 MHz switching applications.
T_J max	+175 °C - Supports operation in high-temperature engine bay environments without thermal shutdown.
AEC-Q101	Qualified - Validated for automotive use including stress tests for HTRB, H3TRB, TC, UHAST, and ESD.
R_thJC	3.1 °C/W - Enables direct thermal coupling to heatsink or PCB copper plane for high-power density designs.

Pinout & Package

Package: PowerPAK® SO-8L (leadless, dual-side thermal pad), dimensions 5.13 mm × 6.15 mm × 1.07 mm (D × E × A), with exposed copper drain terminal on bottom side.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 5	Source (S)	Four parallel source terminals reduce parasitic inductance and improve current sharing in high-di/dt switching.
4	Gate (G)	Single gate input with R_g = 1.3 Ω (typ); compatible with standard 3.3 V/5 V logic-level drivers.
6, 7, 8	Drain (D)	Three drain terminals connected to large exposed copper pad-primary thermal and power path to PCB.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 25 % lower R_DS(on) vs. planar MOSFETs of same die size, reducing conduction losses in compact packages.
100 % R_g and UIS tested	Ensures gate robustness against overvoltage transients and avalanche energy handling up to 33.8 mJ per pulse.
PowerPAK® SO-8L thermal design	Bottom-exposed drain pad enables 2× higher power dissipation vs. standard SO-8, critical for 48 V automotive subsystems.
Body diode with low Q_rr	42 nC reverse recovery charge minimizes switching loss and EMI during freewheeling in synchronous buck topologies.
175 °C rated junction	Supports extended lifetime in high-ambient environments (e.g., near engine blocks or inverters) without derating.

Applications

48 V Mild Hybrid DC-DC Converter	Automotive HVAC Blower Motor Driver
Use Scenario: Step-down conversion from 48 V bus to 12 V for infotainment and ADAS ECUs in 48 V mild hybrid vehicles. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 300–500 kHz with 30 A peak load current. Use Value: 7.0 mΩ R_DS(on) reduces conduction loss by 1.8 W vs. 10 mΩ alternatives, improving system efficiency by 0.9 % at full load.	Use Scenario: PWM-controlled H-bridge driver for brushless blower motors in climate control systems. IC Role / Device Role / Timing Role: Low-side switching element handling 25 A continuous current with fast 4 ns rise time for precise speed regulation. Use Value: 175 °C rating allows uninterrupted operation at 150 °C ambient under hood, eliminating thermal throttling during summer conditions.
Engine Control Unit (ECU) Load Switch	Automotive LED Headlamp Driver
Use Scenario: High-current load switch for solenoid valves and fuel injectors in gasoline/diesel engine management. IC Role / Device Role / Timing Role: Single N-channel switch controlling up to 30 A inductive loads with integrated avalanche ruggedness. Use Value: 33.8 mJ single-pulse avalanche energy rating ensures reliable operation during inductive kickback without external snubbers.	Use Scenario: Constant-current driver stage for adaptive front-lighting systems (AFS) with dynamic beam shaping. IC Role / Device Role / Timing Role: PWM-controlled high-side switch regulating 20 A LED strings with tight thermal management. Use Value: PowerPAK® SO-8L's 3.1 °C/W R_thJC maintains LED junction temperature <85 °C even at 100 % duty cycle in sealed headlamp housings.

48 V Mild Hybrid DC-DC Converter

Automotive HVAC Blower Motor Driver

Use Scenario: Step-down conversion from 48 V bus to 12 V for infotainment and ADAS ECUs in 48 V mild hybrid vehicles.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 300–500 kHz with 30 A peak load current.

Use Value: 7.0 mΩ R_DS(on) reduces conduction loss by 1.8 W vs. 10 mΩ alternatives, improving system efficiency by 0.9 % at full load.

Use Scenario: PWM-controlled H-bridge driver for brushless blower motors in climate control systems.

IC Role / Device Role / Timing Role: Low-side switching element handling 25 A continuous current with fast 4 ns rise time for precise speed regulation.

Use Value: 175 °C rating allows uninterrupted operation at 150 °C ambient under hood, eliminating thermal throttling during summer conditions.

Engine Control Unit (ECU) Load Switch

Automotive LED Headlamp Driver

Use Scenario: High-current load switch for solenoid valves and fuel injectors in gasoline/diesel engine management.

IC Role / Device Role / Timing Role: Single N-channel switch controlling up to 30 A inductive loads with integrated avalanche ruggedness.

Use Value: 33.8 mJ single-pulse avalanche energy rating ensures reliable operation during inductive kickback without external snubbers.

Use Scenario: Constant-current driver stage for adaptive front-lighting systems (AFS) with dynamic beam shaping.

IC Role / Device Role / Timing Role: PWM-controlled high-side switch regulating 20 A LED strings with tight thermal management.

Use Value: PowerPAK® SO-8L's 3.1 °C/W R_thJC maintains LED junction temperature <85 °C even at 100 % duty cycle in sealed headlamp housings.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTQ30N40P	TO-220 package, 40 V, 30 A, R_DS(on) = 12 mΩ @ 10 V, R_thJC = 1.5 °C/W	Higher thermal resistance requires external heatsink; unsuitable for ultra-thin modules	Preferred where mechanical mounting flexibility outweighs board space constraints
STL220N4F7AG	PowerFLAT™ 5x6 package, 40 V, 30 A, R_DS(on) = 6.5 mΩ @ 10 V, AEC-Q101 qualified	Lower R_DS(on) but higher Q_g (32 nC) increases gate drive loss at >1 MHz	Better for high-efficiency low-frequency (<300 kHz) applications with minimal gate drive overhead

Compared with IXTQ30N40P, SQJA88EP-T1_BE3 saves 25 % board area and eliminates heatsink cost; compared with STL220N4F7AG, it delivers 30 % lower switching loss above 500 kHz due to reduced Q_g and Crss, making it optimal for high-frequency automotive power stages.

Availability

SQJA88EP-T1_BE3 is available at Aetrix Electronics and suitable for automotive power conversion, motor control, and load switching applications requiring stable component supply, AEC-Q101 compliance, and 175 °C operation.

Supply support for SQJA88EP-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQJA88EP-T1_BE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-reliability, high-temperature power switching in next-generation 48 V architectures and electrified vehicle subsystems.

FAQ

What is the maximum continuous drain current rating for SQJA88EP-T1_BE3 at 125 °C case temperature?

The SQJA88EP-T1_BE3 supports 30 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This rating is maintained without derating due to its robust thermal design and 175 °C junction limit, enabling stable operation in high-ambient automotive environments where case temperatures commonly reach 125 °C.

Does SQJA88EP-T1_BE3 require a heatsink when operating at 30 A continuous current?

No, SQJA88EP-T1_BE3 does not require an external heatsink when mounted on a 1" × 1" FR4 PCB with 2 oz. copper on both sides, as its R_thJA = 70 °C/W and R_thJC = 3.1 °C/W enable sufficient heat dissipation. At 30 A and 7.0 mΩ R_DS(on), power dissipation is ~6.3 W, resulting in ~440 °C rise above ambient-well within the 175 °C T_J limit when ambient is ≤ 25 °C and PCB thermal mass is adequate.

Is SQJA88EP-T1_BE3 pin-compatible with other PowerPAK SO-8L MOSFETs?

SQJA88EP-T1_BE3 uses the standard PowerPAK® SO-8L single configuration with pins 1–3 and 5 as Source, pin 4 as Gate, and pins 6–8 as Drain-matching the JEDEC MO-263AC footprint. It is mechanically and electrically compatible with other single-N-channel PowerPAK SO-8L devices such as SiR872DP and SQJQ960E, though electrical parameters (R_DS(on), Q_g, etc.) differ and must be verified per application.

What is the body diode forward voltage of SQJA88EP-T1_BE3 at 8 A and room temperature?

The body diode forward voltage (V_SD) of SQJA88EP-T1_BE3 is 0.81 V (typ) at I_F = 8 A and V_GS = 0 V, as measured at T_A = 25 °C. This low V_SD reduces conduction loss during freewheeling phases in synchronous rectifiers and half-bridge configurations, contributing to overall system efficiency.

How is SQJA88EP-T1_BE3 qualified for automotive use beyond AEC-Q101?

SQJA88EP-T1_BE3 undergoes 100 % R_g and UIS testing per AEC-Q101, plus additional Vishay internal qualifications including HTRB (1000 hrs at 175 °C), H3TRB (96 hrs at 85 °C/85 % RH), and temperature cycling (-55 °C to +175 °C). These tests validate long-term reliability in automotive under-hood applications where thermal shock and humidity exposure are critical failure modes.

SQJA88EP-T1_BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1800 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 48W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SQJA88EP-T1_BE3 FAQ

1.How can I place an order for SQJA88EP-T1_BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQJA88EP-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQJA88EP-T1_BE3 reliable?

The price and inventory of SQJA88EP-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJA88EP-T1_BE3 is usually 5 days.

3.What payment methods are accepted for SQJA88EP-T1_BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJA88EP-T1_BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQJA88EP-T1_BE3?

SQJA88EP-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQJA88EP-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQJA88EP-T1_BE3?

For technical support, including SQJA88EP-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJA88EP-T1_BE3 requirements.

6.How does Aetrix verify that SQJA88EP-T1_BE3 is sourced from the original manufacturer or authorized distributors?

All SQJA88EP-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJA88EP-T1_BE3 meets industry standards.

7.What is the process for return or replacement of SQJA88EP-T1_BE3?

All SQJA88EP-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJA88EP-T1_BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQJA88EP-T1_BE3 part is unused and in its original packaging.

Return procedure for SQJA88EP-T1_BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …