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Vishay Siliconix SQJA88EP-T1_GE3
- Part No.:
- SQJA88EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJA88EP-T1_GE3.pdf
- Description:
- MOSFET N-CH 40V 30A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:2,936
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Product details
Overview
SQJA88EP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 40 V drain-source voltage, 30 A continuous drain current at 25 °C and 125 °C, and featuring RDS(on) of 7.0 mΩ at VGS = 10 V and 9.5 mΩ at VGS = 4.5 V. It operates up to +175 °C junction temperature and is qualified to AEC-Q101, serving as a high-current, high-temperature switching element in engine control units and DC-DC converters.
For engineers reviewing the SQJA88EP-T1_GE3 datasheet, SQJA88EP-T1_GE3 pinout, SQJA88EP-T1_GE3 application, or SQJA88EP-T1_GE3 equivalent, key selection considerations include its PowerPAK® SO-8L leadless package, 100 % Rg and UIS tested reliability, low gate charge (21–35 nC), and thermal resistance of 3.1 °C/W (junction-to-case), critical for thermally constrained automotive power stages.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low RDS(on) and fast switching in high-duty-cycle automotive power conversion. Its gate threshold voltage (1.5–2.5 V) enables robust 3.3 V and 5 V logic-level drive compatibility while maintaining noise immunity.
The device integrates a body diode with reverse recovery time of 44–90 ns and Qrr of 42–90 nC, supporting synchronous rectification and freewheeling in buck and half-bridge topologies. Thermal design is anchored by RthJC = 3.1 °C/W and RthJA = 70 °C/W (PCB mount), validated under 1" × 1" FR4 conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage compatible with 12 V/24 V automotive battery systems with transient margin. |
| RDS(on) @ VGS = 10 V | 7.0 mΩ - Enables <1 W conduction loss at 30 A, reducing thermal load in high-current motor drivers. |
| RDS(on) @ VGS = 4.5 V | 9.5 mΩ - Ensures reliable turn-on with standard 5 V microcontroller GPIOs without level-shifting. |
| ID Continuous | 30 A - Sustained current capability at both 25 °C and 125 °C case temperature, supporting derating-free operation in engine bay environments. |
| Qg Total Gate Charge | 21–35 nC - Low switching energy enables efficient 100–500 kHz operation in DC-DC controllers with minimal driver stress. |
| TJ Operating Range | −55 °C to +175 °C - Qualified for under-hood applications including transmission control modules and EV battery management systems. |
| AEC-Q101 Qualified | Yes - Validated for automotive electronics per stress test requirements including HTRB, H3TRB, and UIS, ensuring long-term field reliability. |
Pinout & Package
Package: PowerPAK® SO-8L (leadless, dual-side thermal pad), dimensions 5.13 mm × 6.15 mm × 1.07 mm (D × E × A), with exposed copper drain terminals on bottom side for enhanced thermal transfer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 7, 8 | Source (S) | Common source connection; multiple pins reduce parasitic inductance and improve current sharing in high-di/dt switching. |
| 4 | Gate (G) | Single-point gate input; low Rg (0.6–2.0 Ω) minimizes ringing and simplifies gate driver layout. |
| 5, 6 | Drain (D) | Exposed copper drain pads on bottom surface - primary thermal path to PCB; requires soldered thermal land for RthJC = 3.1 °C/W performance. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Technology | Delivers industry-leading RDS(on) × area efficiency, enabling smaller PCB footprints versus planar MOSFETs at same current rating. |
| 100 % Rg and UIS Tested | Ensures gate robustness against overvoltage transients and avalanche energy handling (EAS = 33.8 mJ), critical for unregulated load-dump conditions. |
| PowerPAK® SO-8L Package | Leadless construction reduces package inductance and improves thermal conductivity vs. SO-8; bottom-side drain enhances heatsinking without external heatsinks. |
| Body Diode Optimization | Low VSD (0.81–1.2 V) and controlled Qrr support efficient freewheeling in synchronous rectifiers and motor phase-legs without external Schottky diodes. |
| High-Temperature Operation | Guaranteed RDS(on) stability up to 175 °C ensures consistent performance in turbocharger-mounted ECUs and transmission valve drivers. |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | Automotive DC-DC Converter Primary Switch |
|---|---|
|
Use Scenario: High-speed, high-current switching of 12 V fuel injectors in gasoline direct injection systems with PWM frequencies up to 20 kHz. IC Role / Device Role / Timing Role: Main power switch controlling injector coil energization and de-energization; must sustain 30 A peak current with sub-20 ns turn-off delay. Use Value: Low RDS(on) and fast tf (6–10 ns) minimize switching losses and coil voltage overshoot, improving fuel metering accuracy and EMI compliance. |
Use Scenario: Primary-side high-side switch in 48 V–12 V bidirectional DC-DC converters for 48 V mild hybrid architectures. IC Role / Device Role / Timing Role: Synchronous rectifier and main power switch operating at 200–300 kHz with 50 % duty cycle and 30 A average current. Use Value: 9.5 mΩ RDS(on) at 4.5 V gate drive enables direct MCU control; low Qgd/Qgs ratio ensures clean zero-voltage switching transitions. |
| Electric Power Steering (EPS) Motor Phase Leg | Transmission Solenoid Driver Module |
|
Use Scenario: Half-bridge leg in three-phase EPS motor inverters, handling 30 A RMS phase current with 175 °C ambient exposure near gearbox housing. IC Role / Device Role / Timing Role: Low-side switch in phase-leg configuration; conducts freewheeling current via integrated body diode during dead-time. Use Value: Optimized body diode trr (44–90 ns) and Qrr (42–90 nC) suppress voltage spikes and reduce cross-conduction risk during commutation. |
Use Scenario: High-current solenoid actuation in 8-speed automatic transmission valve bodies, requiring 30 A pulsed current at 100 ms duration. IC Role / Device Role / Timing Role: Single-ended switch driving inductive solenoid loads; must withstand repetitive UIS events during rapid on/off cycling. Use Value: 100 % UIS tested and 26 A single-pulse avalanche current rating ensure robustness against inductive kickback without snubber circuits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXTP30N10P | TO-220 package, 100 V VDS, RDS(on) = 30 mΩ @ 10 V, no AEC-Q101 qualification | Higher voltage margin but larger footprint and no automotive qualification; suited for industrial 100 V systems only | Select only if >40 V blocking is required and AEC-Q101 is not mandated; not drop-in due to package and qualification mismatch |
| STL220N4F7AG | PowerFLAT™ 5×6 package, 40 V VDS, RDS(on) = 0.75 mΩ @ 10 V, AEC-Q101 qualified, lower RDS(on) but higher Qg (65 nC) | Better conduction loss but slower switching; requires stronger gate driver for same frequency operation | Prefer for ultra-low-loss 100 kHz+ converters where thermal headroom exists; not pin-compatible due to different pinout and thermal pad layout |
Compared with SQJA88EP-T1_GE3, IXTP30N10P offers higher voltage rating but lacks automotive qualification and thermal efficiency, while STL220N4F7AG delivers lower RDS(on) at the cost of higher gate drive demand and non-interchangeable packaging-making SQJA88EP-T1_GE3 the optimal balance of AEC-Q101 compliance, thermal performance, and drive simplicity in space-constrained 40 V automotive power stages.
Availability
SQJA88EP-T1_GE3 is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and 48 V–12 V DC-DC converters requiring stable component supply across automotive production lifecycles.
Supply support for SQJA88EP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJA88EP-T1_GE3 belongs to Vishay's TrenchFET® automotive power MOSFET product line, engineered specifically for high-reliability, high-temperature switching in engine bay and transmission control applications.
FAQ
What is the maximum continuous drain current rating for SQJA88EP-T1_GE3 at 175 °C junction temperature?
The SQJA88EP-T1_GE3 maintains a continuous drain current rating of 30 A at TC = 125 °C, but its datasheet does not specify a derated ID value at 175 °C junction temperature. Instead, it guarantees operation up to +175 °C TJ with RDS(on) limits defined at that temperature (0.0120 Ω max at VGS = 10 V, ID = 8 A). Designers must apply thermal modeling using RthJC = 3.1 °C/W and system-level cooling to determine safe ID at TJ = 175 °C for SQJA88EP-T1_GE3.
Is SQJA88EP-T1_GE3 suitable for 3.3 V microcontroller gate drive without a level shifter?
Yes, SQJA88EP-T1_GE3 supports logic-level gate drive down to 4.5 V, with RDS(on) = 9.5 mΩ specified at VGS = 4.5 V. While its gate threshold voltage range is 1.5–2.5 V, full enhancement and low on-resistance require ≥4.5 V. A 3.3 V GPIO cannot reliably achieve this; therefore, SQJA88EP-T1_GE3 is not recommended for direct 3.3 V drive. A gate driver or level shifter is required to deliver ≥4.5 V to the gate of SQJA88EP-T1_GE3 for specified performance.
Does SQJA88EP-T1_GE3 have a guaranteed avalanche rating, and what is its single-pulse value?
Yes, SQJA88EP-T1_GE3 is 100 % tested for Unclamped Inductive Switching (UIS) and has a guaranteed single-pulse avalanche rating: IAS = 26 A (L = 0.1 mH) and EAS = 33.8 mJ. This rating is validated per AEC-Q101 stress requirements and ensures robustness against inductive energy dissipation during turn-off in relay or solenoid drive applications-critical for reliable operation of SQJA88EP-T1_GE3 in automotive valve and actuator control.
What is the thermal resistance from junction to case (RthJC) for SQJA88EP-T1_GE3, and how is it measured?
The junction-to-case thermal resistance (RthJC) for SQJA88EP-T1_GE3 is 3.1 °C/W, measured from the silicon die to the exposed drain copper pads on the bottom of the PowerPAK® SO-8L package. This value assumes proper soldering of the drain thermal pad to a minimum 1" × 1" copper area on FR4 PCB per Vishay's recommended pad layout. Achieving this RthJC is essential to realize the full 48 W power dissipation capability of SQJA88EP-T1_GE3 at TC = 25 °C.
How does the PowerPAK® SO-8L package of SQJA88EP-T1_GE3 differ from standard SO-8 in terms of thermal and electrical performance?
The PowerPAK® SO-8L package of SQJA88EP-T1_GE3 replaces leads with bottom-exposed copper drain terminals, eliminating bond wire inductance and reducing package resistance. This yields RthJC = 3.1 °C/W (vs. ~50–60 °C/W for SO-8) and lower source inductance-improving switching speed and reducing voltage overshoot. Unlike SO-8, the PowerPAK® SO-8L requires careful stencil design and reflow profiling to ensure void-free solder joints on the thermal pad, which directly impacts SQJA88EP-T1_GE3 thermal performance and reliability.
SQJA88EP-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 7mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 35 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1800 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 48W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJA88EP-T1_GE3 FAQ
1.How can I place an order for SQJA88EP-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJA88EP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJA88EP-T1_GE3 reliable?
The price and inventory of SQJA88EP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJA88EP-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJA88EP-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJA88EP-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJA88EP-T1_GE3?
SQJA88EP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJA88EP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJA88EP-T1_GE3?
For technical support, including SQJA88EP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJA88EP-T1_GE3 requirements.
6.How does Aetrix verify that SQJA88EP-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJA88EP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJA88EP-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJA88EP-T1_GE3?
All SQJA88EP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJA88EP-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJA88EP-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJA88EP-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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