My Inquiry
My Account
Vishay Siliconix SQJA90EP-T1_GE3
- Part No.:
- SQJA90EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJA90EP-T1_GE3.pdf
- Description:
- MOSFET N-CH 80V 60A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:5,694
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SQJA90EP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET with 80 V VDS, 60 A continuous drain current at TC = 25 °C, and 7.6 mΩ RDS(on) at VGS = 10 V. It operates up to +175 °C junction temperature and is housed in a PowerPAK® SO-8L leadless package, targeting high-reliability motor control and DC-DC conversion in engine management systems.
For engineers reviewing the SQJA90EP-T1_GE3 datasheet, SQJA90EP-T1_GE3 pinout, SQJA90EP-T1_GE3 application, or SQJA90EP-T1_GE3 equivalent, this page delivers verified electrical parameters, thermal performance data, AEC-Q101 qualification status, and real-world design implications for automotive power switching circuits.
Technical Context
This MOSFET uses trench-gate silicon technology to achieve low on-resistance and fast switching with controlled gate charge (Qg = 36–55 nC). Its 100 % Rg and UIS testing ensures robustness under unclamped inductive switching stress in automotive loads.
The device features a body diode with trr = 64–130 ns and Qrr = 108–220 nC, enabling efficient synchronous rectification and freewheeling in half-bridge configurations. Thermal resistance RthJC = 2.2 °C/W supports high-power density PCB layouts when mounted on copper-clad FR4.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 80 V - Withstands transient overvoltage spikes common in 12 V/24 V automotive battery rails without breakdown. |
| RDS(on) @ VGS = 10 V | 7.6 mΩ max - Enables <1 W conduction loss at 60 A, critical for thermally constrained engine bay modules. |
| ID continuous @ TC = 25 °C | 60 A - Supports high-current motor drivers and solenoid actuators without external heatsinking. |
| Junction temp. range | −55 °C to +175 °C - Qualified for under-hood operation per AEC-Q101, eliminating derating concerns at peak ambient. |
| Qg total | 36–55 nC - Determines gate driver power requirement; enables use with standard 1 A peak gate drivers in PWM inverters. |
| RthJC | 2.2 °C/W - Allows direct thermal coupling to PCB copper planes or metal-core substrates for efficient heat extraction. |
| EAS | 57 mJ - Specifies single-pulse avalanche energy handling capability during load dump or inductive turn-off events. |
Pinout & Package
Package: PowerPAK® SO-8L (leadless, bottom-side thermal pad), dimensions 5.13 mm × 6.15 mm × 1.07 mm (D × E × A), with exposed drain copper on underside for enhanced thermal transfer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 7, 8 | Source (S) | Common source connection; pins 1/2/3/7/8 are internally tied - provides low-inductance return path and thermal conduction to PCB. |
| 4 | Gate (G) | Control input; requires ≤ ±20 V drive; gate resistance Rg = 0.18–0.62 Ω affects switching speed and ringing. |
| 5, 6 | Drain (D) | High-side power node; pins 5/6 connect to internal die drain and exposed bottom thermal pad - primary heat dissipation path. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control units, transmission solenoids, and EPS systems. |
| 100 % Rg and UIS tested | Ensures gate robustness and avalanche reliability across production lots - eliminates field failure risk from parametric drift. |
| TrenchFET® architecture | Delivers 23 % lower RDS(on) vs. planar MOSFETs at same voltage rating - reduces board area and thermal mass requirements. |
| PowerPAK SO-8L package | Reduces thermal resistance by 40 % vs. standard SO-8 - enables 2× higher power density in space-constrained ECUs. |
| Body diode trr < 130 ns | Minimizes reverse recovery losses in synchronous buck converters - improves efficiency by ≥0.8 % at 200 kHz switching. |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | Electric Power Steering (EPS) Motor Phase Switch |
|---|---|
Use Scenario: High-speed, high-current switching of 12 V fuel injectors with 2 ms pulse width and 10 Hz repetition rate. IC Role / Device Role / Timing Role: Low-side switch controlling injector coil current; handles repetitive UIS events during coil de-energization. Use Value: 175 °C rating prevents thermal shutdown during sustained idling; 57 mJ EAS absorbs inductive kickback without snubber circuitry. |
Use Scenario: Half-bridge phase leg in 3-phase BLDC motor driver for steering assist torque generation. IC Role / Device Role / Timing Role: High-side and low-side switching element; operates at 10–20 kHz PWM with <25 ns turn-off delay. Use Value: 7.6 mΩ RDS(on) limits conduction loss to <0.5 W per FET at 30 A RMS; fast Qgd/Qgs ratio suppresses shoot-through risk. |
| 48 V Mild Hybrid DC-DC Converter | Automotive HVAC Blower Motor Controller |
Use Scenario: Synchronous rectifier in isolated bidirectional LLC resonant converter interfacing 12 V and 48 V domains. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier; body diode conducts during dead time; MOSFET conducts during active period. Use Value: 64–130 ns trr and low Qrr reduce switching loss by 35 % vs. Schottky alternatives; 175 °C rating accommodates sealed converter enclosure temps. |
Use Scenario: PWM-controlled high-current blower motor (up to 40 A) in cabin air distribution system. IC Role / Device Role / Timing Role: Low-side power switch in H-bridge configuration; handles regenerative braking current via body diode. Use Value: 60 A ID rating supports peak startup surge; 0.8–1.5 V VSD ensures minimal forward drop during freewheeling, reducing heat generation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1405PbF | Higher RDS(on) (5.3 mΩ @ 10 V but only at TJ = 25 °C); not AEC-Q101 qualified; TO-220 package. | Lacks automotive qualification and thermal performance at elevated temperature - unsuitable for under-hood deployment. | Select only for non-automotive industrial motor drives where qualification and compact packaging are not required. |
| STL220N6F7 | Same 60 V rating, 1.2 mΩ RDS(on), PowerFLAT 5x6 package; AEC-Q101 qualified but lower VDS margin. | Better conduction loss but insufficient 80 V headroom for 24 V commercial vehicle load dump transients (ISO 7637-2 Pulse 5a). | Prefer for 12 V passenger car applications with tight RDS(on) targets; avoid in 24 V truck/bus systems requiring 80 V rating. |
Compared with IRF1405PbF and STL220N6F7, SQJA90EP-T1_GE3 uniquely balances 80 V rating, AEC-Q101 compliance, 7.6 mΩ on-resistance at 175 °C, and PowerPAK SO-8L thermal performance - making it the only drop-in solution for high-temp, high-reliability 24 V automotive power stages.
Availability
SQJA90EP-T1_GE3 is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and 48 V mild hybrid DC-DC converters requiring stable component supply across extended automotive product lifecycles.
Supply support for SQJA90EP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix designs and manufactures discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, efficiency, and automotive qualification.
The SQJA90EP-T1_GE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-temperature, high-current switching in engine management, chassis, and safety-critical vehicle subsystems.
FAQ
What is the maximum continuous drain current for SQJA90EP-T1_GE3 at 125 °C case temperature?
The SQJA90EP-T1_GE3 supports 37 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK SO-8L package and ensures safe operation within the 175 °C maximum junction temperature limit. Designers must verify PCB copper area and airflow to maintain TC ≤ 125 °C under full load.
Is SQJA90EP-T1_GE3 pin-compatible with standard SO-8 MOSFETs?
No, SQJA90EP-T1_GE3 uses the leadless PowerPAK® SO-8L package with bottom-side thermal pad and non-standard pin layout - it is not mechanically or electrically pin-compatible with through-hole or gull-wing SO-8 devices. The pinout places Drain on pins 5/6 and Source on pins 1/2/3/7/8, requiring dedicated PCB footprint per Vishay document 63818.
Does SQJA90EP-T1_GE3 include integrated gate protection?
SQJA90EP-T1_GE3 does not integrate gate Zener clamping or series resistance. Its gate-source voltage rating is ±20 V, and gate leakage is limited to ±100 nA at ±20 V. External gate resistors (typically 10–47 Ω) and TVS diodes are recommended to suppress ESD and dv/dt-induced turn-on in automotive harness environments.
What is the typical body diode forward voltage of SQJA90EP-T1_GE3 at 10 A?
The typical body diode forward voltage (VSD) of SQJA90EP-T1_GE3 is 0.8 V at IF = 10 A and VGS = 0 V, with a maximum of 1.5 V. This low VSD minimizes conduction loss during freewheeling in H-bridge and synchronous rectifier topologies, especially when combined with its fast 64–130 ns reverse recovery time.
How is the thermal performance of SQJA90EP-T1_GE3 validated for automotive use?
SQJA90EP-T1_GE3 thermal performance is validated via RthJC = 2.2 °C/W (junction-to-case) and RthJA = 68 °C/W (junction-to-ambient, 1"² FR4 PCB), both measured per JEDEC standards. Its AEC-Q101 qualification includes 1000-hour high-temperature operating life (HTOL) testing at 175 °C and thermal cycling from −55 °C to +175 °C - confirming reliability in under-hood thermal profiles.
SQJA90EP-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 7.6mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 55 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3500 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 68W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJA90EP-T1_GE3 FAQ
1.How can I place an order for SQJA90EP-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJA90EP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJA90EP-T1_GE3 reliable?
The price and inventory of SQJA90EP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJA90EP-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJA90EP-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJA90EP-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJA90EP-T1_GE3?
SQJA90EP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJA90EP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJA90EP-T1_GE3?
For technical support, including SQJA90EP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJA90EP-T1_GE3 requirements.
6.How does Aetrix verify that SQJA90EP-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJA90EP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJA90EP-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJA90EP-T1_GE3?
All SQJA90EP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJA90EP-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJA90EP-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJA90EP-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SQJA90EP-T1_GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
