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Vishay Siliconix SQJA92EP-T1_GE3
- Part No.:
- SQJA92EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQJA92EP-T1_GE3.pdf
- Description:
- MOSFET N-CH 80V 57A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:2,670
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Product details
Overview
SQJA92EP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET with 80 V VDS, 57 A continuous drain current at TC = 25 °C, and 9.5 mΩ RDS(on) at VGS = 10 V, designed for high-efficiency DC-DC converters and motor control in under-hood automotive systems.
For engineers reviewing the SQJA92EP-T1_GE3 datasheet, SQJA92EP-T1_GE3 pinout, SQJA92EP-T1_GE3 application, or SQJA92EP-T1_GE3 equivalent, this device delivers AEC-Q101 qualification, 175 °C junction operation, and robust UIS/100% Rg testing - critical for engine management, battery disconnect, and 48 V mild-hybrid power stages.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with Qg = 30–45 nC and Ciss = 2005–2650 pF at VDS = 25 V. Its PowerPAK SO-8L package provides enhanced thermal performance (RthJC = 2.2 °C/W) and surface-mount compatibility for high-power density layouts.
The device features a body diode with trr = 57–115 ns and Qrr = 88–180 nC, enabling efficient synchronous rectification and freewheeling in buck and half-bridge topologies. Gate threshold voltage is tightly specified at 2.5–3.5 V, supporting robust 3.3 V and 5 V gate drive compatibility.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 80 V - Supports 48 V automotive bus systems with 2× safety margin against load dump transients. |
| RDS(on) @ VGS = 10 V | 9.5 mΩ max - Enables <1.5 W conduction loss at 40 A, reducing heatsink requirements in compact modules. |
| ID (continuous, TC = 25 °C) | 57 A - Sustains high-current loads such as starter relays, HVAC blowers, and solenoid drivers. |
| TJ operating range | −55 to +175 °C - Qualified for under-hood placement without derating in extreme ambient conditions. |
| Qg (total gate charge) | 30–45 nC - Balances switching speed and gate driver power loss for 100–500 kHz PWM operation. |
| EAS (single-pulse avalanche energy) | 54 mJ - Withstands inductive turn-off stress in motor drives without external snubbers. |
| AEC-Q101 qualified | Yes - Validated per automotive reliability standard for temperature cycling, HTRB, and UHAST. |
Pinout & Package
Package: PowerPAK® SO-8L (leadless, dual-side thermal pad), dimensions 5.13 mm × 6.15 mm × 1.07 mm (D × E × A), FR4 PCB mount with exposed copper drain pad on bottom side.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (S) | Source | Four parallel source terminals reduce bond wire inductance and improve current sharing in high-di/dt applications. |
| 5 (G) | Gate | Single gate input with Rg = 0.20–0.68 Ω - enables stable gate drive without external series resistance in most 5 V logic-level designs. |
| 6, 7, 8 (D) | Drain | Three drain terminals connected to large bottom-side thermal pad - provides low-inductance, high-current path and primary heat dissipation route to PCB. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers 25 % lower RDS(on) vs. planar MOSFETs of same die size, improving power density in space-constrained ECUs. |
| 100 % Rg and UIS tested | Ensures gate robustness and avalanche capability per unit - eliminates field failures due to gate oxide rupture or inductive kick damage. |
| PowerPAK SO-8L thermal design | RthJC = 2.2 °C/W enables >50 W power dissipation with minimal PCB copper area, reducing thermal vias and layer count. |
| Body diode trr < 115 ns | Minimizes reverse recovery losses during hard commutation, critical for efficiency in synchronous buck converters. |
| AEC-Q101 qualification | Validates long-term reliability across temperature, humidity, and vibration profiles required for ASIL-B/C system components. |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | 48 V Mild-Hybrid DC-DC Converter |
|---|---|
Use Scenario: High-speed switching of fuel injectors in gasoline direct injection (GDI) systems with peak currents up to 12 A and 10 kHz pulse frequency. IC Role / Device Role / Timing Role: Low-side switch controlling injector coil current with precise on/off timing and fast fall time (tf ≤ 25 ns). Use Value: 9.5 mΩ RDS(on) minimizes coil heating during dwell time; 175 °C rating ensures stable operation near hot engine block. |
Use Scenario: Primary-side synchronous rectifier in bidirectional 48 V–12 V DC-DC converter for regenerative braking and start-stop support. IC Role / Device Role / Timing Role: High-current, high-frequency (300 kHz) power switch with low Qg and fast tr/tf for zero-voltage switching (ZVS) assist. Use Value: 30–45 nC Qg reduces gate drive loss; 54 mJ EAS withstands transient overvoltage during phase shift transitions. |
| Automotive HVAC Blower Motor Controller | 12 V Battery Disconnect Switch |
Use Scenario: PWM-controlled high-side or low-side switch for brushless DC blower motors drawing up to 45 A continuous current in cabin air handling units. IC Role / Device Role / Timing Role: Main power stage MOSFET with integrated body diode for freewheeling and regenerative braking current paths. Use Value: 57 A ID rating supports full-load torque; trr = 57–115 ns limits diode switching loss during PWM dead-time. |
Use Scenario: Solid-state replacement for mechanical relay in battery management systems, isolating 12 V starter battery during deep discharge or fault conditions. IC Role / Device Role / Timing Role: Fail-safe power switch with controlled turn-on/turn-off and avalanche-rated off-state blocking. Use Value: 80 V VDS accommodates 12 V system load dump spikes; AEC-Q101 qualification ensures 15+ year field life in safety-critical isolation function. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF100P217PBF | Higher RDS(on) (11.5 mΩ), TO-220FP package, no AEC-Q101 qualification | Requires heatsink; not suitable for under-hood automotive use without additional qualification | Consider only for non-automotive industrial 12 V/24 V motor control where qualification is not mandated. |
| STL220N6F7AG | Same 60 V rating, 2.2 mΩ RDS(on), PowerFLAT 5x6 package, AEC-Q101 qualified | Lower voltage rating limits use to 24 V systems; smaller footprint but higher thermal resistance (RthJC = 3.5 °C/W) | Preferred for space-constrained 24 V ADAS modules; not drop-in for 48 V or 80 V bus applications requiring SQJA92EP-T1_GE3's voltage headroom. |
Compared with IRF100P217PBF and STL220N6F7AG, SQJA92EP-T1_GE3 uniquely balances 80 V rating, 9.5 mΩ on-resistance, AEC-Q101 compliance, and PowerPAK SO-8L thermal performance - making it the optimal choice for 48 V automotive power conversion where voltage margin, efficiency, and reliability are jointly critical.
Availability
SQJA92EP-T1_GE3 is available at Aetrix Electronics and suitable for automotive power distribution, 48 V DC-DC conversion, and engine control applications requiring stable component supply across extended product lifecycles.
Supply support for SQJA92EP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJA92EP-T1_GE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-reliability, high-temperature switching in engine bay and battery system applications.
FAQ
What is the maximum continuous drain current for SQJA92EP-T1_GE3 at 125 °C case temperature?
The SQJA92EP-T1_GE3 supports 33 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK SO-8L package and ensures safe operation within the 175 °C maximum junction temperature limit. Engineers must verify PCB copper area and airflow to sustain this current in real-world layouts.
Does SQJA92EP-T1_GE3 have a qualified AEC-Q101 rating, and what tests does that include?
Yes, SQJA92EP-T1_GE3 is AEC-Q101 qualified. This includes stress testing for high-temperature reverse bias (HTRB), high-temperature gate bias (HTGB), temperature cycling, unbiased highly accelerated stress test (uHAST), and mechanical shock/vibration. The qualification confirms suitability for automotive under-hood applications where reliability over 15+ years is mandatory.
What is the typical gate charge (Qg) of SQJA92EP-T1_GE3, and how does it affect gate driver selection?
The SQJA92EP-T1_GE3 has a total gate charge (Qg) of 30–45 nC at VGS = 10 V and VDS = 40 V. This value determines gate driver peak current requirements: for 100 ns turn-on, ≥300 mA peak drive is needed. Standard automotive gate drivers like the UCC27531 or TC4427 are compatible, but layout must minimize gate loop inductance to avoid ringing.
Can SQJA92EP-T1_GE3 be used in synchronous rectification applications, and what body diode parameters support this?
Yes, SQJA92EP-T1_GE3 is suitable for synchronous rectification. Its body diode has trr = 57–115 ns, Qrr = 88–180 nC, and VSD = 0.8–1.2 V at IF = 10 A. These values enable low-loss freewheeling and reduced reverse recovery loss compared to discrete Schottky solutions - especially beneficial in high-frequency 48 V–12 V DC-DC converters.
What is the thermal resistance from junction to case (RthJC) for SQJA92EP-T1_GE3, and how should it be used in thermal design?
The SQJA92EP-T1_GE3 has RthJC = 2.2 °C/W, measured from junction to the drain pad (bottom-side thermal interface). In thermal design, this value must be combined with PCB thermal resistance (e.g., 1.5–3.0 °C/W for 2 oz. copper with 8–12 thermal vias) to calculate total junction-to-ambient resistance. It does not replace RthJA = 68 °C/W, which assumes minimal PCB copper.
SQJA92EP-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 57A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 9.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 45 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2650 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 68W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SQJA92EP-T1_GE3 FAQ
1.How can I place an order for SQJA92EP-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJA92EP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJA92EP-T1_GE3 reliable?
The price and inventory of SQJA92EP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJA92EP-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJA92EP-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJA92EP-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJA92EP-T1_GE3?
SQJA92EP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJA92EP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJA92EP-T1_GE3?
For technical support, including SQJA92EP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJA92EP-T1_GE3 requirements.
6.How does Aetrix verify that SQJA92EP-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJA92EP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJA92EP-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJA92EP-T1_GE3?
All SQJA92EP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJA92EP-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJA92EP-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJA92EP-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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