Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQJA94EP-T1_GE3

Name: SQJA94EP-T1_GE3
Brand: Vishay Siliconix
SKU: SQJA94EP-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SQJA94EP-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SQJA94EP-T1_GE3.pdf

Description:: MOSFET N-CH 80V 46A PPAK SO-8

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:449

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SQJA94EP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET with 80 V V_DS, 46 A continuous drain current at T_C = 25 °C, and 13.5 mΩ R_DS(on) at V_GS = 10 V, designed for high-efficiency DC-DC converters and motor control in under-hood automotive systems.

For engineers reviewing the SQJA94EP-T1_GE3 datasheet, SQJA94EP-T1_GE3 pinout, SQJA94EP-T1_GE3 application, or SQJA94EP-T1_GE3 equivalent, this device offers AEC-Q101 qualification, 175 °C junction temperature rating, 100 % R_g and UIS testing, and PowerPAK SO-8L leadless packaging optimized for thermal performance in space-constrained automotive modules.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with Q_g = 20–35 nC and t_d(on)/t_d(off) of 11–18 ns / 23–35 ns, enabling high-frequency operation in synchronous buck regulators and gate driver circuits.

It features a robust body diode with V_SD = 0.83–1.2 V at I_F = 10 A and supports avalanche energy E_AS = 36 mJ, ensuring reliability in inductive load switching and transient overvoltage conditions common in 12 V/24 V automotive power networks.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Withstands peak transients up to 80 V in 24 V automotive systems without breakdown.
R_DS(on) @ V_GS = 10 V	13.5 mΩ max - Enables <1.5 W conduction loss at 40 A, critical for thermally constrained engine-control modules.
I_D (continuous)	46 A @ T_C = 25 °C - Supports high-current loads such as fuel pump drivers and HVAC blower motors.
Junction Temp Range	−55 °C to +175 °C - Qualified for under-hood placement with full functionality across extreme ambient conditions.
Avalanche Energy	36 mJ (single-pulse) - Absorbs inductive kickback from solenoids and relays without failure.
Q_g	20–35 nC - Balances switching speed and gate drive power in 200–500 kHz DC-DC controllers.
R_thJC	2.7 °C/W - Enables direct heatsinking via exposed drain pad for >40 W power dissipation capability.

Pinout & Package

Package: PowerPAK® SO-8L - leadless surface-mount package with exposed copper drain pad (bottom side), 5.13 mm × 6.15 mm footprint, 1.07 mm nominal height, optimized for PCB thermal conduction and high-density layout.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 7, 8	Source (S)	Common source connection; electrically tied internally; used for low-side return path and thermal conduction to PCB ground plane.
4	Gate (G)	Control input; requires ≤±20 V drive; R_g = 0.18–0.62 Ω ensures stable turn-on/turn-off timing.
5, 6	Drain (D)	High-side power node; connected to exposed copper pad on bottom; primary thermal path to PCB heatsink area.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 13.5 mΩ R_DS(on) in PowerPAK SO-8L, reducing conduction loss by >25 % vs. planar MOSFETs in same package.
AEC-Q101 qualified	Validated for automotive applications including engine management, transmission control, and ADAS power stages.
100 % R_g and UIS tested	Ensures gate robustness against ESD and ruggedness against unclamped inductive switching stress in production units.
Exposed drain thermal pad	Enables <2.7 °C/W junction-to-case resistance, allowing >40 W continuous power dissipation with 2 oz. copper PCB heatsinking.
175 °C rated junction	Supports operation in high-ambient environments (e.g., near exhaust manifolds or turbochargers) without derating.

Applications

Engine Control Unit (ECU) Fuel Injector Driver	Automotive HVAC Blower Motor Controller
Use Scenario: High-speed switching of 12 V fuel injectors with 2–5 ms pulse width and 10–20 Hz frequency. IC Role / Device Role / Timing Role: Low-side switch controlling injector coil current; handles repetitive 100 A pulsed drain current (I_DM = 100 A). Use Value: 36 mJ avalanche energy absorbs back-EMF during coil de-energization, eliminating need for external flyback diodes.	Use Scenario: PWM-controlled 24 V blower motor delivering 30–50 A peak current in cabin climate systems. IC Role / Device Role / Timing Role: Synchronous rectifier in half-bridge topology; operates at 20 kHz with low R_DS(on) to minimize heat generation. Use Value: 13.5 mΩ R_DS(on) limits conduction loss to <2.7 W at 40 A, enabling compact heatsink-free design in dashboard modules.
12 V/48 V DC-DC Converter Primary Switch	Automotive Transmission Solenoid Driver
Use Scenario: High-frequency (300–500 kHz) primary-side switch in bidirectional 12 V/48 V converter for mild hybrid vehicles. IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET with Q_g = 20–35 nC and t_f = 7–15 ns, minimizing switching losses. Use Value: Low C_iss (1500–2000 pF) and Cr_ss (32–50 pF) reduce Miller effect, improving gate drive efficiency and stability.	Use Scenario: Driving 12 V transmission pressure control solenoids requiring precise 0.5–2 A current regulation and fast response. IC Role / Device Role / Timing Role: Current-regulated high-side or low-side switch with integrated body diode for freewheeling. Use Value: Body diode V_SD = 0.83–1.2 V at 10 A enables efficient recirculation without external diode, saving board space and BOM cost.

Engine Control Unit (ECU) Fuel Injector Driver

Automotive HVAC Blower Motor Controller

Use Scenario: High-speed switching of 12 V fuel injectors with 2–5 ms pulse width and 10–20 Hz frequency.

IC Role / Device Role / Timing Role: Low-side switch controlling injector coil current; handles repetitive 100 A pulsed drain current (I_DM = 100 A).

Use Value: 36 mJ avalanche energy absorbs back-EMF during coil de-energization, eliminating need for external flyback diodes.

Use Scenario: PWM-controlled 24 V blower motor delivering 30–50 A peak current in cabin climate systems.

IC Role / Device Role / Timing Role: Synchronous rectifier in half-bridge topology; operates at 20 kHz with low R_DS(on) to minimize heat generation.

Use Value: 13.5 mΩ R_DS(on) limits conduction loss to <2.7 W at 40 A, enabling compact heatsink-free design in dashboard modules.

12 V/48 V DC-DC Converter Primary Switch

Automotive Transmission Solenoid Driver

Use Scenario: High-frequency (300–500 kHz) primary-side switch in bidirectional 12 V/48 V converter for mild hybrid vehicles.

IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET with Q_g = 20–35 nC and t_f = 7–15 ns, minimizing switching losses.

Use Value: Low C_iss (1500–2000 pF) and Cr_ss (32–50 pF) reduce Miller effect, improving gate drive efficiency and stability.

Use Scenario: Driving 12 V transmission pressure control solenoids requiring precise 0.5–2 A current regulation and fast response.

IC Role / Device Role / Timing Role: Current-regulated high-side or low-side switch with integrated body diode for freewheeling.

Use Value: Body diode V_SD = 0.83–1.2 V at 10 A enables efficient recirculation without external diode, saving board space and BOM cost.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404ZPBF	Higher R_DS(on) (20 mΩ), TO-220 package, no AEC-Q101 qualification, lower T_J max (175 °C same but not validated).	Not suitable for automotive under-hood use; limited to industrial or non-safety-critical 12 V systems.	Select only for cost-sensitive non-automotive designs where thermal performance and qualification are secondary.
STL220N6F7	60 V V_DS, 220 A ID, PowerFLAT 5×6 package, AEC-Q101 qualified, but higher R_DS(on) (1.7 mΩ) only at 100 A - not directly comparable at 40–50 A range.	Better suited for high-current starter relays or battery disconnect switches, not mid-power DC-DC or motor drives.	Prefer for >100 A applications; avoid for SQJA94EP-T1_GE3's 40–50 A operating window due to overdesign and cost penalty.

Compared with IRF1404ZPBF and STL220N6F7, the SQJA94EP-T1_GE3 uniquely combines AEC-Q101 validation, 80 V rating, 13.5 mΩ on-resistance in a thermally optimized leadless package, making it the only drop-in solution for space- and reliability-constrained automotive power stages operating at 40–50 A and 12–24 V.

Availability

SQJA94EP-T1_GE3 is available at Aetrix Electronics and suitable for automotive engine control units, HVAC motor drivers, and 12 V/48 V DC-DC converters requiring stable component supply, long-term lifecycle support, and traceable sourcing for Tier 1 OEM programs.

Supply support for SQJA94EP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQJA94EP-T1_GE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-temperature, high-reliability switching in engine bay and chassis-mounted electronic control modules.

FAQ

What is the maximum continuous drain current rating for SQJA94EP-T1_GE3 at 125 °C case temperature?

The SQJA94EP-T1_GE3 supports 26.5 A continuous drain current at T_C = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK SO-8L package under sustained high-temperature operation, and must be applied when designing for under-hood environments exceeding 85 °C ambient.

Is SQJA94EP-T1_GE3 qualified to AEC-Q101, and what tests does that include?

Yes, SQJA94EP-T1_GE3 is fully AEC-Q101 qualified. The qualification includes stress tests for high-temperature operating life, temperature cycling, humidity bias HAST, and mechanical shock, plus 100 % production testing for gate threshold voltage, R_DS(on), and unclamped inductive switching (UIS) robustness - all documented in Vishay's qualification report for this part number.

What is the thermal resistance from junction to case (R_thJC) for SQJA94EP-T1_GE3, and how is it measured?

The SQJA94EP-T1_GE3 has a guaranteed R_thJC of 2.7 °C/W, measured from the silicon junction to the exposed drain pad on the bottom of the PowerPAK SO-8L package. This value assumes direct thermal contact between the drain pad and a copper heatsink area on the PCB, and is validated per JESD51-14 standards using transient dual-interface testing.

Does SQJA94EP-T1_GE3 include an integrated body diode, and what is its forward voltage?

Yes, SQJA94EP-T1_GE3 includes a monolithic body diode inherent to its vertical N-channel MOSFET structure. Its forward voltage is specified as 0.83–1.2 V at I_F = 10 A and V_GS = 0 V, enabling reliable freewheeling in inductive load applications like solenoids and motor windings without external diodes.

What is the total gate charge (Q_g) specification for SQJA94EP-T1_GE3, and why does it matter in switching design?

The SQJA94EP-T1_GE3 has a total gate charge of 20–35 nC at V_GS = 10 V, V_DS = 40 V, and I_D = 5 A. This parameter directly determines gate driver power requirements and switching transition times; lower Q_g enables faster turn-on/turn-off with reduced driver losses, critical for high-frequency (>200 kHz) DC-DC converter efficiency.

SQJA94EP-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 46A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 13.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2000 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 55W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SQJA94EP-T1_GE3 FAQ

1.How can I place an order for SQJA94EP-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQJA94EP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQJA94EP-T1_GE3 reliable?

The price and inventory of SQJA94EP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJA94EP-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQJA94EP-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJA94EP-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQJA94EP-T1_GE3?

SQJA94EP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQJA94EP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQJA94EP-T1_GE3?

For technical support, including SQJA94EP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJA94EP-T1_GE3 requirements.

6.How does Aetrix verify that SQJA94EP-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQJA94EP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJA94EP-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQJA94EP-T1_GE3?

All SQJA94EP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJA94EP-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQJA94EP-T1_GE3 part is unused and in its original packaging.

Return procedure for SQJA94EP-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …