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Vishay Siliconix SQJQ100EL-T1_GE3
- Part No.:
- SQJQ100EL-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 8 x 8
- Datasheet:
-
SQJQ100EL-T1_GE3.pdf
- Description:
- MOSFET N-CH 40V 200A PPAK 8 X 8
- Quantity:
- Payment:
- Shipping:
Inventory:7,143
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Product details
Overview
SQJQ100EL-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 40 V (D–S), with RDS(on) = 1.2 mΩ at VGS = 10 V and 1.5 mΩ at VGS = 4.5 V, supporting continuous drain current up to 200 A at TC = 25 °C. It operates in high-temperature environments up to +175 °C junction temperature and is packaged in the low-profile PowerPAK 8 × 8L leadless package - used in high-efficiency DC–DC converters and battery disconnect circuits in EV powertrain subsystems.
For engineers reviewing the SQJQ100EL-T1_GE3 datasheet, SQJQ100EL-T1_GE3 pinout, SQJQ100EL-T1_GE3 application, or SQJQ100EL-T1_GE3 equivalent, this page delivers verified electrical parameters, thermal performance data, AEC-Q101 qualification status, gate charge characteristics, and real-world design implications for high-current automotive switching applications.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in high-current, high-temperature automotive systems. Its RDS(on) remains stable across –55 °C to +175 °C, and it features 100 % Rg and UIS testing per AEC-Q101 requirements.
The device integrates a robust body diode with VSD = 0.8–1.2 V at IF = 50 A and supports pulsed drain currents up to 600 A. Its gate threshold voltage (VGS(th)) is tightly distributed between 1.5 V and 2.5 V, enabling reliable turn-on with standard 4.5 V logic-level drivers in 12 V/48 V hybrid architectures.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage compatible with 48 V automotive battery systems and transient clamping up to ISO 7637-2 Pulse 5a. |
| RDS(on) @ VGS = 10 V | 1.2 mΩ - Enables <1.2 W conduction loss at 100 A, critical for minimizing heat generation in compact power modules. |
| RDS(on) @ VGS = 4.5 V | 1.5 mΩ - Ensures full enhancement with common 4.5 V gate drivers, eliminating need for level-shifting in low-voltage control stages. |
| ID (continuous, TC = 25 °C) | 200 A - Supports high-current load switching in traction inverters, onboard chargers, and 48 V DC–DC converters without parallel devices. |
| Junction temperature range | –55 °C to +175 °C - Qualified for under-hood and powertrain locations where ambient temperatures exceed 125 °C. |
| Qg (total gate charge) | 140–220 nC - Dictates gate driver power requirement; enables efficient switching at 10–100 kHz in SiC-compatible gate drive designs. |
| RthJC | 1 °C/W - Enables direct thermal coupling to heatsink or copper plane, supporting >100 W steady-state power dissipation with minimal ΔT. |
Pinout & Package
Package: PowerPAK 8 × 8L - leadless, surface-mount, 8 mm × 8 mm footprint with 1.9 mm maximum height. Exposed drain pad on bottom provides primary thermal path and high-current conduction path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing; connected internally to source metallization. |
| 5, 6, 7 | Drain (D) | Three drain terminals tied to large exposed copper pad on bottom - primary thermal and high-current path to PCB ground plane. |
| 8 | Gate (G) | Single gate input with Rg = 0.45–1.5 Ω - optimized for controlled turn-on/turn-off to minimize EMI in high-dI/dt applications. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use including temperature cycling, HTRB, and UIS stress - required for ASIL-B/C system integration. |
| TrenchFET® architecture | Delivers lowest RDS(on) × area among 40 V automotive MOSFETs in 8 × 8 mm footprint - improves power density by ≥25 % vs. planar alternatives. |
| 100 % Rg and UIS tested | Ensures gate robustness against overvoltage transients and avalanche energy handling up to 125 mJ - eliminates field failures from inductive switching spikes. |
| Lead (Pb)-free and RoHS-compliant | Meets automotive ELV Directive and JESD-204B reflow profile - compatible with lead-free assembly processes up to 260 °C peak. |
| Thin 1.9 mm profile | Enables stacking of dual-sided cooling modules and fits within tight Z-height constraints of battery management and motor control enclosures. |
Applications
| Onboard Charger (OBC) Primary Switch | Battery Disconnect Unit (BDU) |
|---|---|
Use Scenario: High-frequency synchronous rectification in 6.6 kW OBC AC–DC stage operating at 50–100 kHz. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer from PFC output to isolation transformer primary. Use Value: Low RDS(on) and Qg reduce conduction and switching losses, enabling >96 % efficiency while maintaining TJ ≤ 150 °C at full load. |
Use Scenario: Isolation of high-voltage traction battery during crash events or service mode in BEVs/PHEVs. IC Role / Device Role / Timing Role: High-current bidirectional switch placed between battery pack and inverter/dc-link capacitor. Use Value: 200 A continuous rating and 600 A pulsed capability support fault-current interruption without derating; AEC-Q101 ensures reliability over 15-year vehicle lifetime. |
| 48 V DC–DC Converter (Step-down) | Traction Inverter Auxiliary Supply |
Use Scenario: Buck converter supplying 12 V auxiliary power from 48 V mild-hybrid bus for ADAS sensors and infotainment. IC Role / Device Role / Timing Role: High-side synchronous FET in multiphase buck topology operating at 300–500 kHz. Use Value: 4.5 V gate drive compatibility allows direct interface with microcontroller GPIOs; low Ciss/Coss minimizes dead-time losses and improves light-load efficiency. |
Use Scenario: Powering gate drivers, MCU, and isolated communication ICs in traction inverter control board. IC Role / Device Role / Timing Role: Secondary-side switch in flyback or forward converter delivering isolated 15 V/2 A to gate driver stage. Use Value: 175 °C max junction temperature enables operation adjacent to IGBT/SiC modules without thermal throttling; body diode VSD < 1.2 V reduces reverse recovery losses. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 40 V automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFS7530TRLPbF | RDS(on) = 1.3 mΩ @ 10 V; larger PowerPAK 8 × 8 but same pinout; higher Qg (240 nC); not AEC-Q101 qualified. | Requires external qualification for automotive use; suitable for industrial UPS or telecom where AEC compliance is not mandated. | Select only if AEC-Q101 is not required and higher gate charge is acceptable for slower switching. |
| STL220N4LF8AG | RDS(on) = 1.15 mΩ @ 10 V; PowerFLAT 8 × 8 package; AEC-Q101 qualified; lower Qg (120 nC); no 4.5 V RDS(on) spec provided. | Lacks guaranteed 4.5 V turn-on performance - may require gate boost circuitry in 12 V control domains. | Prefer when gate drive is ≥10 V and lowest possible Qg is prioritized over 4.5 V compatibility. |
Compared with IRFS7530TRLPbF and STL220N4LF8AG, SQJQ100EL-T1_GE3 uniquely balances AEC-Q101 compliance, 4.5 V logic-level drive, and industry-leading RDS(on)/Qg ratio - making it optimal for space-constrained, thermally aggressive automotive power stages requiring zero gate-level complexity.
Availability
SQJQ100EL-T1_GE3 is available at Aetrix Electronics and suitable for onboard chargers, battery disconnect units, 48 V DC–DC converters, and traction inverter auxiliary supplies requiring stable component supply across multi-year automotive production programs.
Supply support for SQJQ100EL-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJQ100EL-T1_GE3 belongs to Vishay's TrenchFET® Gen IV automotive power MOSFET family, engineered specifically for high-current, high-temperature switching in electrified vehicle power systems - emphasizing reliability, thermal efficiency, and AEC-Q101 compliance.
FAQ
What is the maximum continuous drain current rating for SQJQ100EL-T1_GE3 at 125 °C case temperature?
The SQJQ100EL-T1_GE3 supports 141 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK 8 × 8L package and must be validated against actual PCB layout, copper area, and airflow conditions. Designers should reference the RthJA = 50 °C/W and RthJC = 1 °C/W values to model junction temperature rise accurately in their specific thermal environment. SQJQ100EL-T1_GE3 maintains full functionality across this range when operated within its SOA limits.
Is SQJQ100EL-T1_GE3 qualified to AEC-Q101, and what tests does that include?
Yes, SQJQ100EL-T1_GE3 is fully AEC-Q101 qualified. This includes stress testing for high-temperature reverse bias (HTRB), high-temperature gate bias (HTGB), temperature cycling, unbiased highly accelerated stress test (uHAST), and 100 % Rg and unclamped inductive switching (UIS) screening. These tests validate reliability under automotive environmental extremes - including thermal shock, humidity, and repetitive avalanche energy - ensuring suitability for safety-critical powertrain applications. SQJQ100EL-T1_GE3 documentation confirms qualification per Rev. B of S17-0237.
What is the gate threshold voltage range for SQJQ100EL-T1_GE3, and how does it affect drive circuit design?
The gate threshold voltage (VGS(th)) for SQJQ100EL-T1_GE3 is specified from 1.5 V to 2.5 V at ID = 250 μA. This tight distribution ensures consistent turn-on behavior across temperature and process variation, allowing reliable operation with 4.5 V logic-level drivers without gate boosting. The low VGS(th) upper limit also minimizes shoot-through risk in half-bridge configurations. SQJQ100EL-T1_GE3 achieves full enhancement well below 4.5 V, simplifying gate drive design in 12 V and 48 V automotive control domains.
Does SQJQ100EL-T1_GE3 have an integrated body diode, and what are its key characteristics?
Yes, SQJQ100EL-T1_GE3 includes a monolithic body diode with forward voltage VSD = 0.8–1.2 V at IF = 50 A and TJ = 25 °C. Its reverse recovery charge Qrr is not explicitly published, but typical values for this TrenchFET® Gen IV device fall below 150 nC - supporting moderate-frequency freewheeling in synchronous rectifiers and bidirectional switches. The diode is rated for 136 A continuous source current and 200 A pulsed, matching the MOSFET's robustness in regenerative braking or inverter leg commutation. SQJQ100EL-T1_GE3 body diode performance is characterized across –55 °C to +175 °C.
What is the recommended PCB pad layout for SQJQ100EL-T1_GE3 in the PowerPAK 8 × 8L package?
Vishay specifies a recommended minimum pad pattern for SQJQ100EL-T1_GE3 in Document 67477: an 8.25 mm × 8.25 mm thermal pad with 0.5 mm solder mask opening, surrounded by eight 0.5 mm × 1.29 mm source/gate pads and three 0.85 mm × 4.59 mm drain pads. Thermal vias (≥12× 0.3 mm diameter) under the central drain pad are strongly advised to maximize heat transfer to inner layers. SQJQ100EL-T1_GE3 requires adherence to JEDEC J-STD-020 moisture sensitivity level 3 and peak reflow temperature of 260 °C per its leadless construction.
SQJQ100EL-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 8 x 8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 200A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 220 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 14500 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 150W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 8 x 8
SQJQ100EL-T1_GE3 FAQ
1.How can I place an order for SQJQ100EL-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJQ100EL-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJQ100EL-T1_GE3 reliable?
The price and inventory of SQJQ100EL-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJQ100EL-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJQ100EL-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJQ100EL-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJQ100EL-T1_GE3?
SQJQ100EL-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJQ100EL-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJQ100EL-T1_GE3?
For technical support, including SQJQ100EL-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJQ100EL-T1_GE3 requirements.
6.How does Aetrix verify that SQJQ100EL-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJQ100EL-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJQ100EL-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJQ100EL-T1_GE3?
All SQJQ100EL-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJQ100EL-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJQ100EL-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJQ100EL-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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