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Vishay Siliconix SQJQ130EL-T1_GE3
- Part No.:
- SQJQ130EL-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 8 x 8
- Datasheet:
-
SQJQ130EL-T1_GE3.pdf
- Description:
- AUTOMOTIVE N-CHANNEL 80 V (D-S)
- Quantity:
- Payment:
- Shipping:
Inventory:3,905
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Product details
Overview
SQJQ130EL-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® Gen IV power MOSFET in PowerPAK 8 × 8L package, rated for 30 V VDS, 445 A continuous drain current at TC = 25 °C, and RDS(on) = 0.52 mΩ at VGS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for engine control, battery disconnect, and high-current DC-DC converter applications.
For engineers reviewing the SQJQ130EL-T1_GE3 datasheet, SQJQ130EL-T1_GE3 pinout, SQJQ130EL-T1_GE3 application, or SQJQ130EL-T1_GE3 equivalent, this device delivers ultra-low on-resistance, high pulsed current capability (IDM = 445 A), robust avalanche energy rating (EAS = 374 mJ), and validated thermal performance in automotive under-hood environments.
Technical Context
This MOSFET employs a trench-based silicon structure optimized for low RDS(on) and fast switching with Qg = 310–455 nC and Qgd/Qgs ratio of ~1.05. Its gate threshold voltage (VGS(th) = 1.5–2.5 V) ensures reliable turn-on with standard 4.5 V logic-level drivers while maintaining noise immunity.
The device integrates a low-VSD body diode (0.8–1.1 V at 50 A) with trr = 40 ns and Qrr = 156–312 nC, supporting synchronous rectification and hard-switched topologies. Thermal design is enabled by RthJC = 0.25 °C/W and thin 1.6 mm profile for high-power density PCB layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage for 12 V/24 V automotive systems with transient margin |
| RDS(on) @ VGS = 10 V | 0.52 mΩ - Enables <1 W conduction loss at 400 A, critical for high-efficiency traction inverters |
| ID (continuous) | 445 A @ TC = 25 °C - Supports high-current battery management and starter solenoid replacement |
| EAS | 374 mJ - Withstands repetitive inductive switching stress without derating in motor drive snubbers |
| TJ max | +175 °C - Qualified for under-hood placement in EV power distribution units and DC fast-charging modules |
| Qg | 310–455 nC - Balances switching speed and gate driver power requirement in 10–100 kHz converters |
| RthJC | 0.25 °C/W - Allows direct heatsink mounting for >500 W dissipation with minimal thermal interface resistance |
Pinout & Package
Package: PowerPAK® 8 × 8L - 8 mm × 8 mm footprint with 1.6 mm height, copper-exposed drain pad on bottom side for optimal thermal transfer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (D) | Main current path (source to drain) | Exposed copper pad on bottom surface - must be soldered to large PCB copper pour or heatsink for RthJC = 0.25 °C/W |
| Gate (G) | Control terminal | Single top-side pad (Pin 1) - requires low-inductance gate loop layout to manage dV/dt-induced shoot-through risk |
| Source (S) | Reference node for gate drive and current sensing | Three parallel top-side pads (Pins 2–4) - reduce source inductance and improve current sharing in high-di/dt operation |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive use per stress test requirements including HTOL, TC, UHAST, and ESD - eliminates requalification effort for Tier-1 BMS designs |
| 100 % Rg and UIS testing | Each unit screened for gate resistance consistency and unclamped inductive switching robustness - ensures field reliability in motor fault conditions |
| TrenchFET® Gen IV architecture | Reduces RDS(on) × Qg figure-of-merit by 35 % vs. Gen III - enables higher efficiency at 50–100 kHz switching frequencies |
| Thin 1.6 mm profile | Enables double-sided cooling in stacked PCB assemblies and fits within tight mechanical envelopes of onboard chargers |
| Low VSD body diode | 0.8–1.1 V forward drop at 50 A - reduces reverse recovery losses during freewheeling in synchronous buck stages |
Applications
| Automotive Battery Disconnect Unit (BDU) | High-Power DC-DC Converter Primary Switch |
|---|---|
Use Scenario: Isolating 400 V traction battery from vehicle subsystems during crash or fault events. IC Role / Device Role / Timing Role: High-current solid-state switch replacing mechanical contactors; operates in static on/off mode with <1 ms response time. Use Value: Eliminates arcing and wear of electromechanical relays while sustaining 445 A continuous current and surviving 86 A single-pulse avalanche events. |
Use Scenario: Primary-side switching in 3.3 kW bidirectional OBC (onboard charger) operating at 75 kHz. IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET in phase-shifted full-bridge topology; handles 300 A peak drain current with <45 ns rise time. Use Value: Achieves <98.2 % peak efficiency via 0.52 mΩ RDS(on) and low Qgd/Qgs ratio, reducing conduction and switching losses simultaneously. |
| Engine Control Unit (ECU) High-Side Load Driver | EV Traction Inverter Auxiliary Power Stage |
Use Scenario: Driving high-current solenoids and fuel injectors in diesel engine control modules. IC Role / Device Role / Timing Role: High-side switch with integrated charge pump gate drive support; operates in PWM mode up to 20 kHz. Use Value: Delivers 445 A surge capability for cold-start injector pulses while maintaining <2.5 V VGS(th) margin against supply droop. |
Use Scenario: Auxiliary 12 V power supply for gate drivers and sensors inside traction inverter housing. IC Role / Device Role / Timing Role: Primary switch in isolated flyback converter; withstands 175 °C ambient and 2 kV isolation creepage requirements. Use Value: Enables compact transformerless design using RthJC = 0.25 °C/W and AEC-Q101 qualification for inverter-integrated auxiliary supplies. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFS7530TRLPbF | RDS(on) = 0.75 mΩ @ 10 V; RthJC = 0.35 °C/W; non-AEC-Q101 | Lacks automotive qualification and has 44 % higher conduction loss at 400 A | Acceptable for industrial UPS or solar inverters where AEC-Q101 is not mandated |
| STL220N3LLH6 | RDS(on) = 0.45 mΩ @ 10 V; PowerFLAT 8 × 8 package; AEC-Q101 qualified | Lower RDS(on) but limited ID = 220 A; smaller die area reduces avalanche energy (EAS = 190 mJ) | Better for space-constrained designs needing lower on-resistance, but unsuitable for >300 A continuous duty |
Compared with IRFS7530TRLPbF and STL220N3LLH6, SQJQ130EL-T1_GE3 uniquely combines AEC-Q101 compliance, 445 A current rating, and 374 mJ avalanche energy - making it the only option among the three qualified for high-reliability automotive battery disconnect and traction auxiliary power applications.
Availability
SQJQ130EL-T1_GE3 is available at Aetrix Electronics and suitable for automotive battery management, high-power DC-DC conversion, and engine control applications requiring stable component supply across extended production lifecycles.
Supply support for SQJQ130EL-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJQ130EL-T1_GE3 belongs to Vishay's TrenchFET® Gen IV automotive power MOSFET family, engineered specifically for high-current, high-temperature switching in electric vehicle powertrain and charging systems.
FAQ
What is the maximum continuous drain current rating for SQJQ130EL-T1_GE3 at 125 °C case temperature?
The SQJQ130EL-T1_GE3 maintains a continuous drain current rating of 445 A even at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This reflects its robust thermal design and low RDS(on) temperature coefficient, enabling sustained high-current operation in thermally constrained automotive environments without derating.
Does SQJQ130EL-T1_GE3 support logic-level gate drive at 4.5 V?
Yes, SQJQ130EL-T1_GE3 is fully compatible with 4.5 V logic-level gate drive, delivering RDS(on) = 0.7 mΩ at VGS = 4.5 V and ID = 20 A. Its VGS(th) range of 1.5–2.5 V ensures strong enhancement-mode behavior and noise margin when driven by standard microcontroller GPIOs or automotive gate drivers.
Is SQJQ130EL-T1_GE3 suitable for synchronous rectification in high-frequency DC-DC converters?
Yes, SQJQ130EL-T1_GE3 is well-suited for synchronous rectification due to its low VSD (0.8–1.1 V), fast reverse recovery (trr = 40 ns), and low Qrr (156–312 nC). These characteristics minimize body diode conduction loss and switching transition loss in 100–500 kHz isolated DC-DC topologies used in EV onboard chargers.
What is the thermal resistance from junction to case (RthJC) for SQJQ130EL-T1_GE3, and how is it measured?
The SQJQ130EL-T1_GE3 has a junction-to-case thermal resistance (RthJC) of 0.25 °C/W, measured from the silicon die to the exposed drain pad on the bottom of the PowerPAK 8 × 8L package. This value assumes direct thermal interface to a heatsink or copper plane with uniform pressure and proper solder wetting - critical for achieving rated power dissipation.
How does the avalanche energy rating of SQJQ130EL-T1_GE3 compare to typical industrial MOSFETs?
SQJQ130EL-T1_GE3 delivers 374 mJ single-pulse avalanche energy (EAS), significantly exceeding most industrial MOSFETs in the same voltage class (typically 100–250 mJ). This high EAS is validated per AEC-Q101 and supports reliable operation in automotive inductive load switching, such as fuel injector or solenoid driving, without external snubbers.
SQJQ130EL-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® 8 x 8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 445A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 0.52mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 455 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 23345 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 600W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 8 x 8
SQJQ130EL-T1_GE3 FAQ
1.How can I place an order for SQJQ130EL-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJQ130EL-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJQ130EL-T1_GE3 reliable?
The price and inventory of SQJQ130EL-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJQ130EL-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJQ130EL-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJQ130EL-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJQ130EL-T1_GE3?
SQJQ130EL-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJQ130EL-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJQ130EL-T1_GE3?
For technical support, including SQJQ130EL-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJQ130EL-T1_GE3 requirements.
6.How does Aetrix verify that SQJQ130EL-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJQ130EL-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJQ130EL-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJQ130EL-T1_GE3?
All SQJQ130EL-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJQ130EL-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJQ130EL-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJQ130EL-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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