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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQJQ140E-T1_JE3

Name: SQJQ140E-T1_JE3
Brand: Vishay Siliconix
SKU: SQJQ140E-T1_JE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQJQ140E-T1_JE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 8 x 8

Datasheet:: SQJQ140E-T1_JE3.pdf

Description:: AUTOMOTIVE N-CHANNEL 40V (D-S)

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Product details

Overview

SQJQ140E-T1_JE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® Gen IV MOSFET with 40 V V_DS, 0.44 mΩ typical R_DS(on) at V_GS = 10 V and 20 A, 701 A continuous drain current at T_C = 25 °C, and PowerPAK® 8 × 8L package rated for 175 °C junction operation - deployed in high-current DC-DC converter primary-side switching and 48 V automotive battery disconnect circuits.

For engineers reviewing the SQJQ140E-T1_JE3 datasheet, SQJQ140E-T1_JE3 pinout, SQJQ140E-T1_JE3 application, or SQJQ140E-T1_JE3 equivalent, key selection criteria include its AEC-Q101 qualification, ultra-low R_DS(on) at high temperature, 100 % R_g and UIS tested reliability, and thermal resistance of only 0.25 °C/W (junction-to-case), critical for high-power density underhood designs.

Technical Context

This MOSFET uses trench-gate silicon technology optimized for low conduction loss and fast switching in high-current automotive power stages. Its gate charge profile (Q_g = 192–288 nC) and low R_g (0.8–2.4 Ω) support efficient gate drive with minimal external component count in synchronous buck converters.

The device integrates a robust body diode with Q_rr = 177–354 nC and t_rr = 94–188 ns, enabling reliable freewheeling in hard-switched topologies. Its 175 °C maximum junction temperature and -55 °C minimum storage rating meet extended automotive thermal requirements without derating penalties at elevated ambient conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 48 V nominal battery systems including load dump transients.
R_DS(on) @ V_GS = 10 V, I_D = 20 A	0.00044 Ω (typ) - Enables <1 W conduction loss at 50 A, reducing heatsink size in high-current motor drives.
I_D (continuous) @ T_C = 25 °C	701 A - Supports single-device implementation in high-power traction inverters or starter-generator modules.
R_thJC	0.25 °C/W - Allows direct thermal coupling to cold plate for >500 W dissipation without exceeding 175 °C junction limit.
Q_g	192–288 nC - Determines gate driver power requirement; enables 100 kHz+ switching in isolated DC-DC with standard 2 A drivers.
AEC-Q101 qualified	Qualified per stress test standard for automotive discrete semiconductors - required for engine control, ADAS, and EV powertrain applications.
t_r/t_f	78–117 ns / 32–48 ns - Fast edge rates minimize switching losses in high-frequency ZVS/ZCS resonant converters.

Pinout & Package

Package: PowerPAK® 8 × 8L (1.6 mm height, 8.0 mm × 8.0 mm footprint), thermally enhanced bottom-exposed drain pad with 4 source terminals and 1 gate terminal.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current path output / heat sink interface	Exposed copper pad on bottom surface - must be soldered to large PCB copper pour or thermal pad for optimal R_thJA and R_thJC.
Source (S1–S4)	Return path for load current / reference node for gate drive	Four separate source terminals reduce parasitic inductance and improve current sharing in parallel configurations.
Gate (G)	Control input for channel conduction	Single gate pad located near corner - requires low-inductance layout and RC snubber for EMI suppression in high-dI/dt applications.

Key Features

Feature	Design Value
TrenchFET® Gen IV process	Delivers 25 % lower R_DS(on) vs. prior generation at same die area - increases power density in space-constrained ECUs.
100 % R_g and UIS tested	Ensures gate robustness against overvoltage and avalanche energy handling up to 312 mJ - eliminates field failures in inductive load switching.
Thin 1.6 mm profile	Enables stacking with adjacent components in multi-layer power modules - reduces overall board height in compact ADAS domain controllers.
Very low R_thJC	0.25 °C/W enables >600 W continuous power dissipation with <100 °C ΔT above cold plate - supports sustained peak loads in 48 V mild-hybrid systems.

Applications

48 V Battery Disconnect Switch	High-Current DC-DC Converter Primary
Use Scenario: Isolating 48 V battery during crash event or service mode in mild-hybrid vehicles. IC Role / Device Role / Timing Role: High-side power switch controlled by ASIL-B safety controller with fast turn-off (<100 ns fall time). Use Value: 701 A rating allows single-device solution replacing paralleled TO-263 devices; AEC-Q101 qualification ensures functional safety compliance.	Use Scenario: Primary-side synchronous rectifier in 3 kW bidirectional DC-DC converter between 48 V and 12 V domains. IC Role / Device Role / Timing Role: Main switching element operating at 100–200 kHz with 100 % duty cycle capability during boost mode. Use Value: 0.44 mΩ R_DS(on) cuts conduction loss by >40 % vs. comparable 5×6 mm devices - improves efficiency from 95.2 % to 96.7 % at full load.
Electric Power Steering (EPS) Inverter	Onboard Charger (OBC) Input Stage
Use Scenario: Low-side switching in three-phase inverter driving 12 V EPS motor with peak currents >400 A. IC Role / Device Role / Timing Role: Phase-leg low-side MOSFET with integrated body diode conducting reverse recovery current during commutation. Use Value: Q_rr = 177–354 nC and t_rr = 94–188 ns minimize shoot-through risk and EMI during high-dI/dt transitions.	Use Scenario: Active rectification in PFC stage of 6.6 kW OBC converting AC grid to 400 V DC bus. IC Role / Device Role / Timing Role: High-current switch in totem-pole PFC topology requiring low C_oss (6636 pF max) and fast switching. Use Value: C_iss = 12,140–17,000 pF and Q_gd = 41 nC enable stable zero-voltage switching across full line range without auxiliary circuits.

48 V Battery Disconnect Switch

High-Current DC-DC Converter Primary

Use Scenario: Isolating 48 V battery during crash event or service mode in mild-hybrid vehicles.

IC Role / Device Role / Timing Role: High-side power switch controlled by ASIL-B safety controller with fast turn-off (<100 ns fall time).

Use Value: 701 A rating allows single-device solution replacing paralleled TO-263 devices; AEC-Q101 qualification ensures functional safety compliance.

Use Scenario: Primary-side synchronous rectifier in 3 kW bidirectional DC-DC converter between 48 V and 12 V domains.

IC Role / Device Role / Timing Role: Main switching element operating at 100–200 kHz with 100 % duty cycle capability during boost mode.

Use Value: 0.44 mΩ R_DS(on) cuts conduction loss by >40 % vs. comparable 5×6 mm devices - improves efficiency from 95.2 % to 96.7 % at full load.

Electric Power Steering (EPS) Inverter

Onboard Charger (OBC) Input Stage

Use Scenario: Low-side switching in three-phase inverter driving 12 V EPS motor with peak currents >400 A.

IC Role / Device Role / Timing Role: Phase-leg low-side MOSFET with integrated body diode conducting reverse recovery current during commutation.

Use Value: Q_rr = 177–354 nC and t_rr = 94–188 ns minimize shoot-through risk and EMI during high-dI/dt transitions.

Use Scenario: Active rectification in PFC stage of 6.6 kW OBC converting AC grid to 400 V DC bus.

IC Role / Device Role / Timing Role: High-current switch in totem-pole PFC topology requiring low C_oss (6636 pF max) and fast switching.

Use Value: C_iss = 12,140–17,000 pF and Q_gd = 41 nC enable stable zero-voltage switching across full line range without auxiliary circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTH75N40L2	Higher R_DS(on) (1.2 mΩ), TO-247 package, 40 V rating, no AEC-Q101 qualification	Industrial UPS and solar inverters - not suitable for automotive underhood use due to qualification gap	Select when cost sensitivity outweighs automotive qualification and thermal performance requirements.
STH315N10F7-6	100 V rating, 0.75 mΩ R_DS(on), PowerFLAT™ 8×8, AEC-Q101 qualified	400 V battery systems (BEV) - over-specified voltage rating increases gate charge and cost for 48 V applications	Choose only if future platform scalability to higher voltage architectures is mandatory.

Compared with IXTH75N40L2 and STH315N10F7-6, SQJQ140E-T1_JE3 delivers the lowest R_DS(on) and best thermal resistance in an AEC-Q101-qualified 40 V package - making it optimal for space- and efficiency-critical 48 V automotive power stages where voltage margin is tightly constrained.

Availability

SQJQ140E-T1_JE3 is available at Aetrix Electronics and suitable for 48 V battery management, high-current DC-DC conversion, and electric power steering systems requiring stable component supply and long-term automotive lifecycle support.

Supply support for SQJQ140E-T1_JE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductor design, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQJQ140E-T1_JE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in 48 V mild-hybrid and ADAS subsystems.

FAQ

What is the maximum continuous drain current rating for SQJQ140E-T1_JE3 at 125 °C case temperature?

The SQJQ140E-T1_JE3 supports 405 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations of the PowerPAK® 8 × 8L package under sustained high-temperature operation - critical for underhood applications where ambient temperatures exceed 105 °C. The SQJQ140E-T1_JE3 maintains full functionality across its -55 °C to +175 °C junction range.

Is SQJQ140E-T1_JE3 qualified to AEC-Q101, and what tests does that include?

Yes, SQJQ140E-T1_JE3 is AEC-Q101 qualified. Per Vishay documentation, this includes stress testing for HTGB, HTRB, uHAST, TC, AC/DC life test, and mechanical shock/vibration - plus 100 % R_g and UIS screening. These tests validate reliability for automotive powertrain and chassis applications. The SQJQ140E-T1_JE3 datasheet explicitly states "AEC-Q101 qualified" in the FEATURES section.

What is the typical gate threshold voltage (V_GS(th)) range for SQJQ140E-T1_JE3, and how does it affect drive circuit design?

The SQJQ140E-T1_JE3 has a V_GS(th) range of 2.3 V to 3.3 V (min to max) at T_C = 25 °C. This tight threshold ensures consistent turn-on behavior across production lots and simplifies gate driver selection - a 5 V logic-level signal provides ample overdrive, while 3.3 V microcontrollers can reliably activate the device. The SQJQ140E-T1_JE3 remains fully enhanced well within standard automotive supply rails.

Does SQJQ140E-T1_JE3 have an integrated body diode, and what are its key recovery characteristics?

Yes, SQJQ140E-T1_JE3 includes a monolithic body diode with t_rr = 94–188 ns and Q_rr = 177–354 nC at T_J = 25 °C. These values are measured under standardized conditions (V_DD = 32 V, I_FM = 20 A, di/dt = 100 A/μs) and directly impact commutation losses and EMI in hard-switched topologies. The SQJQ140E-T1_JE3 body diode is optimized for fast, soft recovery to minimize voltage spikes.

What is the thermal resistance from junction to ambient (R_thJA) for SQJQ140E-T1_JE3 when mounted on a 1" square FR4 PCB?

The SQJQ140E-T1_JE3 has R_thJA = 44 °C/W when mounted on a 1" square FR4 PCB, per the Thermal Resistance Ratings table. This value assumes standard JEDEC test conditions and serves as a baseline for preliminary thermal analysis. For production designs, the SQJQ140E-T1_JE3 achieves significantly lower thermal resistance (0.25 °C/W) when the exposed drain pad is soldered to a large copper plane or cold plate.

SQJQ140E-T1_JE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® 8 x 8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 701A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 0.53mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 288 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 17000 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 600W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 8 x 8

SQJQ140E-T1_JE3 FAQ

1.How can I place an order for SQJQ140E-T1_JE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQJQ140E-T1_JE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQJQ140E-T1_JE3 reliable?

The price and inventory of SQJQ140E-T1_JE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJQ140E-T1_JE3 is usually 5 days.

3.What payment methods are accepted for SQJQ140E-T1_JE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJQ140E-T1_JE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQJQ140E-T1_JE3?

SQJQ140E-T1_JE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQJQ140E-T1_JE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQJQ140E-T1_JE3?

For technical support, including SQJQ140E-T1_JE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJQ140E-T1_JE3 requirements.

6.How does Aetrix verify that SQJQ140E-T1_JE3 is sourced from the original manufacturer or authorized distributors?

All SQJQ140E-T1_JE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJQ140E-T1_JE3 meets industry standards.

7.What is the process for return or replacement of SQJQ140E-T1_JE3?

All SQJQ140E-T1_JE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJQ140E-T1_JE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQJQ140E-T1_JE3 part is unused and in its original packaging.

Return procedure for SQJQ140E-T1_JE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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