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Vishay Siliconix SQJQ142E-T1_GE3
- Part No.:
- SQJQ142E-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 8 x 8
- Datasheet:
-
SQJQ142E-T1_GE3.pdf
- Description:
- MOSFET N-CH 40V 460A PPAK 8 X 8
- Quantity:
- Payment:
- Shipping:
Inventory:726
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Product details
Overview
SQJQ142E-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® Gen IV MOSFET rated for 40 V (D–S), with RDS(on) = 1.24 mΩ at VGS = 10 V, 345 A continuous drain current at TC = 25 °C, and qualified to AEC-Q101 for under-hood powertrain and high-current DC–DC converter applications.
For engineers reviewing the SQJQ142E-T1_GE3 datasheet, SQJQ142E-T1_GE3 pinout, SQJQ142E-T1_GE3 application, or SQJQ142E-T1_GE3 equivalent, this device is selected for high-efficiency 48 V/12 V bidirectional converters, electric power steering (EPS) motor phase switches, and battery disconnect units requiring low conduction loss, 175 °C junction operation, and robust avalanche ruggedness.
Technical Context
This MOSFET employs a trench-based silicon structure optimized for low RDS(on) × Qg figure-of-merit, enabling high-frequency synchronous rectification in automotive DC–DC stages. Its gate charge profile (Qg = 92–130 nC, Qgd = 20.1 nC) supports fast switching with controlled dV/dt and minimal Miller-induced shoot-through risk.
Thermally, it features a PowerPAK® 8 × 8L package with RthJC = 0.54 °C/W and exposed-drain thermal pad, enabling direct heatsink mounting. The 1.6 mm profile and bottom-side copper thermal interface support compact, high-power-density layouts in space-constrained engine bay modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage compatible with 48 V nominal automotive systems including load dump transients. |
| RDS(on) @ VGS = 10 V | 1.24 mΩ - Enables <1 W conduction loss at 30 A, critical for thermal management in EPS and starter-generator inverters. |
| ID (continuous, TC = 25 °C) | 345 A - Supports high-current motor drive phases without parallel devices in 40 kW-class traction auxiliary systems. |
| EAS | 115.2 mJ - Confirmed single-pulse avalanche energy ensures reliability during inductive turn-off in solenoid and relay drivers. |
| RthJC | 0.54 °C/W - Allows >200 W power dissipation with ≤100 °C temperature rise above heatsink, enabling passive-cooled designs. |
| Qg | 92–130 nC - Optimized for gate driver ICs with 2 A peak output (e.g., TI UCC2753x), minimizing switching loss at 100–300 kHz. |
| TJ max | 175 °C - Rated for sustained operation in under-hood environments per AEC-Q101, supporting extended lifetime at elevated ambient. |
Pinout & Package
Package: PowerPAK® 8 × 8L (JEDEC MO-295AA), 8 mm × 8 mm × 1.6 mm, thermally enhanced bottom-exposed drain pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | High-impedance control input; requires <2.56 Ω gate resistance to limit ringing and ensure stable 10 V turn-on threshold (2–3.5 V). |
| 2, 3, 4 (S) | Source | Three parallel source terminals reduce package inductance (<1.5 nH) and improve current sharing in high-di/dt motor phases. |
| Drain (bottom pad) | Power Drain / Thermal Interface | Exposed copper drain pad serves dual function: primary current path and primary thermal conduction path to heatsink or PCB copper. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive powertrain use with full temperature cycling, HTRB, and UIS testing per stress test plan. |
| TrenchFET® Gen IV architecture | Delivers 20 % lower RDS(on) × Qg vs. prior generation, reducing combined conduction + switching loss by ≥15 % in 200 kHz DC–DC. |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency and unclamped inductive switching robustness-critical for motor fault tolerance. |
| Thin 1.6 mm profile | Enables stacking of dual-phase modules in <3 mm total height, meeting packaging constraints in compact ECU housings. |
| Low Ciss/Coss ratio | Ciss = 5360–6975 pF, Coss = 2070–2700 pF - Supports ZVS operation in resonant topologies with predictable timing margins. |
Applications
| Electric Power Steering (EPS) | 48 V/12 V Bidirectional DC–DC Converter |
|---|---|
|
Use Scenario: High-current H-bridge phase leg switching in column-assist EPS motors operating up to 150 A peak. IC Role / Device Role / Timing Role: Low-side and high-side N-channel switch in synchronous buck-boost topology, driven by isolated gate drivers. Use Value: 1.24 mΩ RDS(on) reduces I²R loss by >30 % vs. legacy 2.5 mΩ parts, enabling 98.2 % efficiency at 5 kW and extending motor controller thermal margin. |
Use Scenario: Primary-side synchronous rectifier in 3.5 kW bidirectional converter linking 48 V mild-hybrid bus and 12 V legacy network. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier MOSFET in phase-shifted full-bridge configuration, operating at 250 kHz. Use Value: 92–130 nC Qg enables clean 50 ns turn-on with standard 2 A gate drivers, minimizing dead-time losses and improving light-load regulation. |
| Battery Disconnect Unit (BDU) | Onboard Charger (OBC) Input Stage |
|
Use Scenario: Main contactor replacement in high-voltage battery isolation circuits, handling 300 A continuous with fault current interruption. IC Role / Device Role / Timing Role: Single-pole, double-throw (SPDT) solid-state switch controlling battery-to-inverter and battery-to-charger paths. Use Value: 115.2 mJ EAS withstands 48 V bus short-circuit events without failure, eliminating need for external fuses in Class D BDU designs. |
Use Scenario: Active rectification stage in OBC PFC front-end, replacing diode bridge to achieve >98 % efficiency at full 11 kW rating. IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM) interleaved PFC, switching at 65 kHz with 175 °C junction rating. Use Value: 175 °C TJ max allows derating-free operation at 105 °C ambient, eliminating forced air cooling and reducing system size by 22 %. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXTH30N40L2 | Higher RDS(on) (3.0 mΩ), TO-247 package, no AEC-Q101 qualification | Requires larger heatsink and additional qualification effort for automotive use | Consider only for industrial UPS or non-automotive PFC where AEC-Q101 is not required |
| STL220N4F7AG | Similar RDS(on) (1.25 mΩ), same PowerFLAT™ 8 × 8 package, but 150 °C TJ max and lower EAS (72 mJ) | Limited to under-hood ambient ≤105 °C; unsuitable for sustained 175 °C junction operation | Select when cost sensitivity outweighs extreme temperature requirement and avalanche margin is secondary |
Compared with IXTH30N40L2 and STL220N4F7AG, SQJQ142E-T1_GE3 uniquely combines AEC-Q101 qualification, 175 °C operation, and 115.2 mJ avalanche energy in a thermally optimized 8 × 8L package-making it the only drop-in solution for next-generation 48 V automotive power modules requiring zero derating at peak temperature.
Availability
SQJQ142E-T1_GE3 is available at Aetrix Electronics and suitable for electric power steering (EPS), 48 V/12 V bidirectional DC–DC converters, and battery disconnect units requiring stable component supply across multi-year automotive production programs.
Supply support for SQJQ142E-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing applications.
The SQJQ142E-T1_GE3 belongs to Vishay's TrenchFET® Gen IV automotive power MOSFET family, engineered specifically for high-current, high-temperature power conversion in electrified vehicle subsystems.
FAQ
What is the maximum continuous drain current rating for SQJQ142E-T1_GE3 at 125 °C case temperature?
The SQJQ142E-T1_GE3 supports 199 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced channel mobility and increased RDS(on) at elevated temperatures, and must be validated against actual board-level thermal resistance in the target application layout.
Does SQJQ142E-T1_GE3 have integrated gate protection diodes?
No, SQJQ142E-T1_GE3 does not include integrated gate protection diodes. Its gate-source voltage rating is ±20 V, and external Zener clamping (e.g., 15 V TVS) is recommended in high-noise automotive environments to prevent gate oxide damage during load dump or inductive switching transients.
Is SQJQ142E-T1_GE3 suitable for synchronous rectification in a 400 kHz LLC resonant converter?
Yes, SQJQ142E-T1_GE3 is suitable for synchronous rectification at 400 kHz due to its low Qgd/Qg ratio (20.1/92 nC), fast turn-off delay (37–52 ns), and low Coss (2070–2700 pF). However, layout must minimize source inductance and gate loop area to preserve timing accuracy and avoid false turn-on.
What is the thermal resistance from junction to ambient (RthJA) for SQJQ142E-T1_GE3 on a standard 1" square FR4 PCB?
The junction-to-ambient thermal resistance for SQJQ142E-T1_GE3 is 44 °C/W when mounted on a 1" square FR4 PCB, per note b in the datasheet. This value assumes no external heatsink and is highly layout-dependent-actual performance improves significantly with thermal vias and copper pour under the exposed drain pad.
How is the 100 % UIS testing performed on each SQJQ142E-T1_GE3 unit?
Each SQJQ142E-T1_GE3 undergoes 100 % unclamped inductive switching (UIS) testing per AEC-Q101 stress conditions, using L = 0.1 mH, IAS = 48 A, and EAS = 115.2 mJ. Units failing energy or current thresholds are rejected, ensuring field reliability in motor drive and solenoid control applications where inductive kickback is routine.
SQJQ142E-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® 8 x 8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 460A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.24mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 130 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6975 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 500W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 8 x 8
SQJQ142E-T1_GE3 FAQ
1.How can I place an order for SQJQ142E-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJQ142E-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJQ142E-T1_GE3 reliable?
The price and inventory of SQJQ142E-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJQ142E-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJQ142E-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJQ142E-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJQ142E-T1_GE3?
SQJQ142E-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJQ142E-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJQ142E-T1_GE3?
For technical support, including SQJQ142E-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJQ142E-T1_GE3 requirements.
6.How does Aetrix verify that SQJQ142E-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJQ142E-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJQ142E-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJQ142E-T1_GE3?
All SQJQ142E-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJQ142E-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJQ142E-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJQ142E-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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