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Vishay Siliconix SQJQ144AER-T1_GE3
- Part No.:
- SQJQ144AER-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 8 x 8
- Datasheet:
-
SQJQ144AER-T1_GE3.pdf
- Description:
- AUTOMOTIVE N-CHANNEL 40 V (D-S)
- Quantity:
- Payment:
- Shipping:
Inventory:328
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Product details
Overview
SQJQ144AER-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® Gen IV power MOSFET with 40 V VDS, 0.7 mΩ typical RDS(on) at VGS = 10 V and 20 A, 575 A continuous drain current at TC = 25 °C, housed in a thermally enhanced PowerPAK® 8 × 8LR package for high-current DC-DC converters and motor control in under-hood EV systems.
For engineers reviewing the SQJQ144AER-T1_GE3 datasheet, SQJQ144AER-T1_GE3 pinout, SQJQ144AER-T1_GE3 application, or SQJQ144AER-T1_GE3 equivalent, this page delivers verified thermal resistance (RthJC = 0.25 °C/W), AEC-Q101 qualification status, 100 % UIS testing, and bottom-side copper-exposed lead configuration per Vishay S21-0139-Rev. A.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in high-power automotive subsystems. Its 0.25 °C/W junction-to-case thermal resistance enables direct heatsink mounting via the exposed drain paddle, while the 116 nC total gate charge (Qg) supports efficient gate drive design at 10 V.
The device integrates a robust body diode with 66 ns reverse recovery time and 94 nC Qrr, validated for synchronous rectification and bidirectional current handling in 48 V mild-hybrid architectures. All units undergo 100 % Rg and UIS testing per AEC-Q101 stress requirements.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage for 48 V battery rail protection and DC-DC stage isolation |
| RDS(on) @ VGS = 10 V, ID = 20 A | 0.0007 Ω typ - Enables <1 W conduction loss at 100 A, critical for high-efficiency traction inverters |
| ID continuous @ TC = 25 °C | 575 A - Supports high-current motor phase legs without parallel devices in compact layouts |
| RthJC | 0.25 °C/W - Allows direct thermal coupling to heatsink; reduces junction temperature rise by >200 °C/W vs. standard SO-8 |
| Qg total | 116 nC typ - Matches standard 10 V gate drivers; enables <62 ns turn-off delay with 1 Ω external Rg |
| AEC-Q101 qualified | Qualified per stress test standard for automotive electronics - required for engine control, ADAS, and charging modules |
| TJ max | +175 °C - Enables operation in under-hood environments exceeding 150 °C ambient |
Pinout & Package
PowerPAK® 8 × 8LR is a bottom-exposed, thermally optimized surface-mount package with 8 mm × 8 mm footprint and 1.6 mm profile. The drain paddle occupies the full underside for direct thermal interface; gate and source terminals are top-side only.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Pin 1) | Gate input | Control terminal for MOSFET switching; requires ≤20 V rating; connected to driver IC output |
| S1–S3 (Pins 2–4) | Source return path | Three dedicated source pins reduce bond-wire inductance and improve current sharing in high-di/dt applications |
| D5–D8 (Pins 5–8) | Drain connection | Four drain pins tied internally to the exposed copper paddle - primary current path and thermal conduction path to PCB/heatsink |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV silicon | Delivers 0.7 mΩ RDS(on) in 8 × 8 mm footprint - 30 % lower on-resistance than prior-gen equivalents at same voltage rating |
| 100 % UIS tested | Guarantees ruggedness against inductive switching surges up to 1800 A peak - eliminates need for external snubbers in motor drives |
| Exposed drain paddle | Enables <0.25 °C/W RthJC - reduces thermal derating by 40 % compared to QFN packages with plated thermal pads |
| AEC-Q101 qualification | Covers HTOL, TC, UHAST, and ESD tests - satisfies Tier-1 OEM requirements for powertrain and chassis control modules |
| Thin 1.6 mm profile | Permits integration into space-constrained battery management and onboard charger assemblies where height <2.0 mm is mandatory |
Applications
| Automotive DC-DC Converter | 48 V Mild-Hybrid Motor Inverter |
|---|---|
|
Use Scenario: High-efficiency bidirectional buck-boost converter stepping between 12 V starter battery and 48 V Li-ion auxiliary bus. IC Role / Device Role / Timing Role: Primary high-side switch in synchronous rectified topology operating at 200–300 kHz. Use Value: 0.7 mΩ RDS(on) and 66 ns trr minimize conduction + switching losses, enabling >96 % peak efficiency at 10 kW output. |
Use Scenario: Phase-leg switching in 48 V P0/P1 hybrid electric vehicle motor drives controlling e-compressor or e-turbo actuators. IC Role / Device Role / Timing Role: Low-side power switch with integrated body diode conducting reverse current during PWM dead-time. Use Value: 94 nC Qrr and -3.6 A IRM suppress voltage spikes and reduce EMI, eliminating need for external freewheeling diodes. |
| Onboard Charger (OBC) Primary Switch | EV Battery Disconnect Unit (BDU) |
|
Use Scenario: High-frequency hard-switched totem-pole PFC stage in 11 kW OBC converting AC grid to 400 V DC bus. IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET in bridge-leg configuration with 10 V gate drive. Use Value: 116 nC Qg and 27 ns rise time support clean zero-voltage switching transitions, reducing gate driver power dissipation by 35 %. |
Use Scenario: Main contactor replacement in high-current battery disconnect circuits requiring fail-safe short-circuit protection. IC Role / Device Role / Timing Role: Single-pole, high-current power switch rated for 575 A continuous and 1800 A pulsed fault current. Use Value: 175 °C TJ rating and AEC-Q101 qualification ensure reliable operation during sustained overloads and thermal transients in crash scenarios. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL1404ZPBF | RDS(on) = 3.2 mΩ @ 10 V; TO-220 package; RthJC = 1.25 °C/W; not AEC-Q101 qualified | Limited to non-automotive industrial SMPS; unsuitable for under-hood thermal cycling or safety-critical systems | Select only for cost-sensitive, non-automotive 40 V switch-mode supplies where thermal performance is secondary |
| STL220N4F7AG | RDS(on) = 0.65 mΩ @ 10 V; PowerFLAT™ 8 × 8; AEC-Q101 qualified; RthJC = 0.35 °C/W | Compatible in 48 V BMS and OBC, but higher thermal resistance increases junction temperature by ~40 °C at 500 A | Prefer when ST ecosystem compatibility or dual-source strategy is required; verify thermal margin with board-level simulation |
Compared with IRL1404ZPBF and STL220N4F7AG, the SQJQ144AER-T1_GE3 offers the lowest RthJC (0.25 °C/W) and highest continuous current rating (575 A), making it optimal for thermally constrained automotive power stages where junction temperature must stay below 155 °C at full load.
Availability
SQJQ144AER-T1_GE3 is available at Aetrix Electronics and suitable for automotive DC-DC converters, 48 V mild-hybrid motor inverters, and onboard chargers requiring stable component supply across multi-year vehicle production cycles.
Supply support for SQJQ144AER-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix designs and manufactures discrete semiconductors including MOSFETs, diodes, and optoelectronics, with emphasis on high-reliability power and signal components for automotive and industrial markets.
The SQJQ144AER-T1_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-current, high-temperature 48 V electrification systems including traction inverters, battery disconnects, and bidirectional DC-DC conversion.
FAQ
What is the maximum continuous drain current rating for SQJQ144AER-T1_GE3 at 125 °C case temperature?
The SQJQ144AER-T1_GE3 supports 330 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations of the PowerPAK® 8 × 8LR package under sustained high-temperature operation and must be used for thermal design validation in under-hood applications where case temperature exceeds 100 °C. The SQJQ144AER-T1_GE3 maintains full AEC-Q101 compliance across this range.
Does SQJQ144AER-T1_GE3 have an integrated Schottky diode or is the body diode suitable for synchronous rectification?
The SQJQ144AER-T1_GE3 uses a planar silicon body diode-not a Schottky-optimized for low Qrr (94 nC) and fast trr (66 ns). Its body diode is fully characterized for synchronous rectification in buck and totem-pole PFC topologies, with VSD = 0.8–1.1 V at 50 A and no reverse recovery tail current. The SQJQ144AER-T1_GE3 does not include an external Schottky; its integrated diode meets AEC-Q101 stress requirements.
Is the exposed copper on the bottom of SQJQ144AER-T1_GE3 intended for soldering or mechanical heatsinking only?
The exposed copper drain paddle on the SQJQ144AER-T1_GE3 is designed for both solder reflow attachment and direct thermal interface. Per Vishay document 73257, the end of the lead terminal is exposed copper (not plated), and while a solder fillet at the tip is not guaranteed, full-area soldering of the paddle to a thermal pad ensures robust electrical and thermal connection. The SQJQ144AER-T1_GE3 achieves RthJC = 0.25 °C/W only when the paddle is soldered per recommended land pattern.
What gate drive voltage range is supported by SQJQ144AER-T1_GE3, and is 5 V logic-level operation feasible?
The SQJQ144AER-T1_GE3 specifies VGS = ±20 V absolute maximum, with VGS(th) = 2.0–3.5 V. While it conducts at 5 V, RDS(on) rises sharply below 7.5 V - at VGS = 5 V, RDS(on) exceeds 2.5 mΩ (per Fig. 10). For production use, the SQJQ144AER-T1_GE3 requires ≥10 V gate drive to achieve its rated 0.7 mΩ on-resistance and maintain efficiency in high-current automotive systems.
How is the SQJQ144AER-T1_GE3 qualified for automotive use beyond AEC-Q101?
Beyond AEC-Q101 qualification, the SQJQ144AER-T1_GE3 undergoes 100 % Rg (gate resistance) and UIS (unclamped inductive switching) testing per individual unit. It also meets Vishay's internal automotive reliability standards for HTOL (high-temperature operating life), temperature cycling, and humidity testing. These extended validations are documented in Vishay's reliability report for S21-0139 and apply specifically to the SQJQ144AER-T1_GE3 lot release process.
SQJQ144AER-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® 8 x 8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 575A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 0.9mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 145 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 9020 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 600W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 8 x 8
SQJQ144AER-T1_GE3 FAQ
1.How can I place an order for SQJQ144AER-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJQ144AER-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJQ144AER-T1_GE3 reliable?
The price and inventory of SQJQ144AER-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJQ144AER-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJQ144AER-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJQ144AER-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJQ144AER-T1_GE3?
SQJQ144AER-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJQ144AER-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJQ144AER-T1_GE3?
For technical support, including SQJQ144AER-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJQ144AER-T1_GE3 requirements.
6.How does Aetrix verify that SQJQ144AER-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJQ144AER-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJQ144AER-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJQ144AER-T1_GE3?
All SQJQ144AER-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJQ144AER-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJQ144AER-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJQ144AER-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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