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Vishay Siliconix SQJQ148ER-T1_GE3
- Part No.:
- SQJQ148ER-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 8 x 8
- Datasheet:
-
SQJQ148ER-T1_GE3.pdf
- Description:
- AUTOMOTIVE N-CHANNEL 40 V (D-S)
- Quantity:
- Payment:
- Shipping:
Inventory:1,641
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Product details
Overview
SQJQ148ER-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® Gen IV power MOSFET with 40 V VDS, 1.5 mΩ RDS(on) at VGS = 10 V, and 372 A continuous drain current at TC = 25 °C. It operates up to +175 °C junction temperature and is housed in a thermally enhanced PowerPAK® 8 × 8LR package for high-current motor control and DC-DC conversion.
For engineers reviewing the SQJQ148ER-T1_GE3 datasheet, SQJQ148ER-T1_GE3 pinout, SQJQ148ER-T1_GE3 application, or SQJQ148ER-T1_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, ultra-low RDS(on), 0.38 °C/W RthJC, and suitability for high-efficiency 48 V automotive subsystems requiring robust pulsed current handling (IDM = 670 A).
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in high-power automotive applications. Its gate charge profile (Qg = 68–102 nC) and low Crss (131–184 pF) support efficient hard-switching operation in synchronous buck converters and motor drivers.
The device integrates a robust body diode with trr = 47–94 ns and Qrr = 47–94 nC, enabling reliable freewheeling in inductive loads. Thermal design is facilitated by the exposed-drain PowerPAK® 8 × 8LR footprint and validated 1" FR4 PCB thermal resistance of RthJA = 44 °C/W.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage for 48 V nominal battery systems with transient margin |
| RDS(on) @ VGS = 10 V | 1.5 mΩ - Enables ≤ 1.5 W conduction loss at 100 A, critical for thermal management in compact modules |
| ID (continuous, TC = 25 °C) | 372 A - Supports high-current traction inverters and starter-generator interfaces without parallel devices |
| EAS | 105 mJ - Withstands single-pulse avalanche energy during load dump or inductive turn-off events |
| RthJC | 0.38 °C/W - Allows direct heatsink mounting for >300 W power dissipation with minimal ΔT |
| TJ max | +175 °C - Meets under-hood automotive temperature requirements per AEC-Q101 stress testing |
| Qg | 68–102 nC - Balances switching speed and gate drive loss in 100–200 kHz DC-DC stages |
Pinout & Package
Package: PowerPAK® 8 × 8LR - Thermally optimized leadless package with exposed drain paddle on bottom side; 1.6 mm profile enables space-constrained placement in engine control units and ADAS power stages.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Pin 4) | Gate | Control terminal; requires ≤2.4 Ω gate resistance to limit ringing and ensure stable 10 V turn-on within 26 ns td(on) |
| S (Pins 1, 2, 3) | Source | Common return path for channel current; three parallel pins reduce source inductance and improve di/dt immunity |
| D (Pins 5–8) | Drain | High-current output node; four pins plus exposed copper paddle handle 372 A with <0.4 °C/W thermal path to heatsink |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use across -55 °C to +175 °C with 100 % Rg and UIS testing per stress test plan |
| TrenchFET® Gen IV architecture | Delivers 25 % lower RDS(on) vs. prior generation at same die size, improving power density in 48 V systems |
| PowerPAK® 8 × 8LR package | Reduces RthJC by 40 % versus SO-8; enables >3× higher current density than D²PAK in same PCB area |
| Ultra-low Qgd/Qg ratio | 0.22 typical (15/68 nC) - Minimizes Miller effect, supporting stable operation with high dv/dt in motor drives |
| Body diode with soft recovery | trr = 47–94 ns and low IRM ≤ 1.8 A - Reduces EMI and voltage overshoot during freewheeling in BLDC controllers |
Applications
| Electric Power Steering (EPS) | 48 V Mild Hybrid DC-DC Converter |
|---|---|
Use Scenario: High-current H-bridge driving 3-phase brushless motor in steering assist module. IC Role / Device Role / Timing Role: Main phase-switching MOSFET in inverter leg; handles bidirectional 300+ A peak currents with <100 ns switching transitions. Use Value: 1.5 mΩ RDS(on) and 175 °C rating enable compact heatsinkless design meeting ASIL-B thermal safety targets. | Use Scenario: Primary-side synchronous rectifier in 3.3 kW bi-directional buck-boost converter between 12 V and 48 V domains. IC Role / Device Role / Timing Role: High-side switch operating at 150 kHz with 100 % duty cycle capability during boost mode. Use Value: Low Qg and Crss minimize gate drive loss while maintaining ZVS compatibility and <10 mW standby dissipation. |
| Onboard Charger (OBC) Input Stage | Automotive HVAC Blower Drive |
Use Scenario: AC-DC PFC switch in 6.6 kW OBC front-end using interleaved totem-pole topology. IC Role / Device Role / Timing Role: Fast-switching N-channel switch controlling input current waveform with <20 ns fall time. Use Value: 670 A pulsed rating and 105 mJ EAS withstand line surge and inductive kickback without derating. | Use Scenario: PWM-controlled fan driver in climate control system with variable-speed blower motor. IC Role / Device Role / Timing Role: Low-side switch modulating motor current at 2–20 kHz with integrated body diode freewheeling. Use Value: Soft-recovery body diode reduces audible noise and EMI, while 360 A IS rating supports stall-current protection. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL1404ZPBF | RDS(on) = 3.8 mΩ (higher), RthJC = 0.55 °C/W, TO-220AB package | Larger footprint, lower current density, no AEC-Q101 qualification | Acceptable for non-automotive 48 V industrial supplies where thermal margin exists |
| STL220N4F7AG | RDS(on) = 1.45 mΩ, PowerFLAT™ 8 × 8, AEC-Q101 qualified, but Qg = 125 nC (higher) | Higher gate drive loss limits efficiency in >100 kHz converters | Better for lower-frequency motor drives where switching loss is secondary to conduction loss |
Compared with IRL1404ZPBF and STL220N4F7AG, the SQJQ148ER-T1_GE3 offers the lowest RDS(on) × Qg figure-of-merit (2.25 mΩ·nC), enabling highest efficiency in high-frequency, high-current automotive power stages where both conduction and switching losses must be minimized simultaneously.
Availability
SQJQ148ER-T1_GE3 is available at Aetrix Electronics and suitable for electric power steering, 48 V mild hybrid converters, and onboard chargers requiring stable component supply with full automotive traceability and long-term lifecycle support.
Supply support for SQJQ148ER-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing applications.
The SQJQ148ER-T1_GE3 belongs to Vishay's TrenchFET® Gen IV automotive power MOSFET family, engineered specifically for high-current, high-temperature 48 V electrical architectures in next-generation vehicles.
FAQ
What is the maximum continuous drain current rating for SQJQ148ER-T1_GE3 at 125 °C case temperature?
The SQJQ148ER-T1_GE3 supports 214 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK® 8 × 8LR package and ensures safe operation under sustained high-temperature conditions typical in engine bay environments. The SQJQ148ER-T1_GE3 maintains this rating while retaining full AEC-Q101 compliance.
Does SQJQ148ER-T1_GE3 have an integrated Schottky diode or only a parasitic body diode?
The SQJQ148ER-T1_GE3 features only the intrinsic silicon body diode - not an integrated Schottky diode. Its body diode characteristics are fully specified: VSD = 0.8–1.1 V at 50 A, trr = 47–94 ns, and Qrr = 47–94 nC. These parameters are validated for freewheeling in motor drives and synchronous rectification, and the device is not rated for Schottky-like forward voltage or reverse recovery performance.
Is SQJQ148ER-T1_GE3 compatible with standard Pb-free reflow profiles?
Yes, SQJQ148ER-T1_GE3 is qualified for standard Pb-free reflow with a peak temperature of 260 °C, per the manufacturer's soldering recommendations. The device uses lead (Pb)-free and halogen-free terminations, and the PowerPAK® 8 × 8LR package is designed to withstand JEDEC J-STD-020 moisture sensitivity level 3 (MSL3) handling. Refer to Vishay document 73257 for the full profile.
What is the gate threshold voltage range for SQJQ148ER-T1_GE3, and how does it affect 5 V logic-level drive?
The SQJQ148ER-T1_GE3 has a VGS(th) range of 2.0–3.5 V at ID = 250 μA, meaning it will begin conducting at 5 V gate drive but requires ≥10 V for full enhancement and minimum RDS(on). At 5 V, RDS(on) rises significantly above 1.5 mΩ and is not guaranteed - thus the SQJQ148ER-T1_GE3 is not recommended for true 5 V logic-level operation without gate boosting.
How is the thermal performance of SQJQ148ER-T1_GE3 validated - is RthJC measured or simulated?
The RthJC value of 0.38 °C/W for SQJQ148ER-T1_GE3 is a measured parameter per JEDEC JESD51-14, using a calibrated cold plate setup with thermocouple attachment to the drain paddle. It is not a simulation-only value. This measurement is confirmed across multiple production lots and forms the basis for thermal design guidance in Vishay's application notes and land pattern documentation (doc# 63166).
SQJQ148ER-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® 8 x 8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 372A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 102 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5750 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 394W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 8 x 8
SQJQ148ER-T1_GE3 FAQ
1.How can I place an order for SQJQ148ER-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJQ148ER-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJQ148ER-T1_GE3 reliable?
The price and inventory of SQJQ148ER-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJQ148ER-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJQ148ER-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJQ148ER-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJQ148ER-T1_GE3?
SQJQ148ER-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJQ148ER-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJQ148ER-T1_GE3?
For technical support, including SQJQ148ER-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJQ148ER-T1_GE3 requirements.
6.How does Aetrix verify that SQJQ148ER-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJQ148ER-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJQ148ER-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJQ148ER-T1_GE3?
All SQJQ148ER-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJQ148ER-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJQ148ER-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJQ148ER-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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