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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQJQ150E-T1_GE3

Name: SQJQ150E-T1_GE3
Brand: Vishay Siliconix
SKU: SQJQ150E-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQJQ150E-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 8 x 8

Datasheet:: SQJQ150E-T1_GE3.pdf

Description:: AUTOMOTIVE N-CHANNEL 40 V (D-S)

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Product details

Overview

SQJQ150E-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® Gen IV power MOSFET with 40 V V_DS, 1.9 mΩ R_DS(on) at V_GS = 10 V, 233 A continuous drain current at T_C = 25 °C, and PowerPAK 8 × 8L package rated for 175 °C junction operation - used in high-current DC-DC converter primary-side switching and 48 V automotive motor control inverters.

For engineers reviewing the SQJQ150E-T1_GE3 datasheet, SQJQ150E-T1_GE3 pinout, SQJQ150E-T1_GE3 application, or SQJQ150E-T1_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, 0.8 °C/W junction-to-case thermal resistance, 100% R_g and UIS tested reliability, and low-profile 1.6 mm height for constrained under-hood layouts.

Technical Context

This MOSFET employs a trench-based silicon structure optimized for low conduction loss and fast switching in high-power automotive systems. Its gate charge profile (Q_g = 61–92 nC, Q_gd = 17 nC) supports efficient hard-switching up to 100 kHz in synchronous buck converters.

The device integrates a robust body diode with t_rr = 40–80 ns and Q_rr = 34–68 nC, enabling reliable freewheeling in H-bridge motor drives. Thermal design is enabled by R_thJC = 0.8 °C/W and R_thJA = 44 °C/W on 1" FR4 PCB - critical for sustained 134 A operation at T_C = 125 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 48 V nominal automotive battery systems including load dump transients.
R_DS(on) @ V_GS = 10 V	1.9 mΩ - Enables <1.2 W conduction loss at 20 A, reducing heatsink requirements in high-current power stages.
I_D Continuous @ T_C = 25 °C	233 A - Supports peak-phase currents in traction inverters and high-power DC-DC modules without derating.
Junction Temp Range	−55 to +175 °C - Meets under-hood thermal requirements for engine bay-mounted power electronics per AEC-Q101.
Q_g Total Gate Charge	61–92 nC - Determines driver strength needed; enables use with standard 2 A gate drivers at ≤100 kHz switching frequency.
R_thJC	0.8 °C/W - Allows direct thermal coupling to cold plates or heatsinks, supporting >150 W power dissipation with minimal ΔT.
Avalanche Energy E_AS	72 mJ - Provides single-pulse ruggedness against inductive switching surges in motor drive applications.

Pinout & Package

PowerPAK® 8 × 8L thermally enhanced leadless package with exposed drain paddle on bottom side; 1.6 mm profile optimized for automated SMT assembly and high-power density layouts.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4 (Bottom)	Source	Four parallel source terminals reduce loop inductance and improve current sharing in high-di/dt switching.
5 (Top)	Gate	Single gate input with R_g = 0.8–2.6 Ω - enables stable gate drive without external series resistance in most applications.
6, 7, 8 (Bottom)	Drain	Exposed copper drain paddle provides primary thermal path to PCB heatsink; no solder fillet required at edge per spec.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and chassis applications with extended temperature and reliability testing.
100% R_g and UIS tested	Each unit screened for gate resistance consistency and unclamped inductive switching ruggedness - ensures field reliability.
0.8 °C/W R_thJC	Enables direct thermal interface to metal-core PCBs or cold plates, supporting >150 W continuous power dissipation.
TrenchFET® Gen IV architecture	Delivers lowest R_DS(on) × Q_g figure-of-merit in its voltage class - improves efficiency in high-frequency DC-DC converters.
Thin 1.6 mm profile	Reduces board stack height in space-constrained modules such as e-axle inverters and 48 V starter-generators.

Applications

Automotive DC-DC Converters	Electric Power Steering (EPS)
Use Scenario: Step-down conversion from 48 V battery to 12 V auxiliary rail in mild-hybrid vehicles. IC Role / Device Role / Timing Role: Primary-side synchronous rectifier MOSFET in interleaved 2-phase buck converter operating at 100–200 kHz. Use Value: 1.9 mΩ R_DS(on) minimizes conduction loss at 100+ A peak current, improving system efficiency by ≥1.2% versus 2.8 mΩ alternatives.	Use Scenario: Three-phase inverter driving brushless DC motor in column-assist EPS systems. IC Role / Device Role / Timing Role: High-side and low-side switch in each phase leg, handling 60–90 A peak phase current with PWM switching. Use Value: 175 °C rated junction and 72 mJ avalanche energy ensure robustness during motor stall and short-circuit events.
Onboard Charger (OBC) Primary Switch	48 V HVAC Compressor Inverter
Use Scenario: Active clamp flyback or LLC resonant converter primary switch in bidirectional OBC modules. IC Role / Device Role / Timing Role: Main power switch handling 200+ A pulsed drain current during ZVS transitions at 200–500 kHz. Use Value: Low C_oss (1137–1592 pF) and Cr_ss (134–188 pF) reduce switching losses and improve ZVS behavior across wide load range.	Use Scenario: High-power inverter supplying 3-phase AC to variable-speed HVAC compressor in electric vehicles. IC Role / Device Role / Timing Role: Phase-leg switch operating continuously at 120–150 A RMS with 10 kHz PWM modulation. Use Value: 134 A continuous rating at T_C = 125 °C allows full output power without forced air cooling in sealed under-dash enclosures.

Automotive DC-DC Converters

Electric Power Steering (EPS)

Use Scenario: Step-down conversion from 48 V battery to 12 V auxiliary rail in mild-hybrid vehicles.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier MOSFET in interleaved 2-phase buck converter operating at 100–200 kHz.

Use Value: 1.9 mΩ R_DS(on) minimizes conduction loss at 100+ A peak current, improving system efficiency by ≥1.2% versus 2.8 mΩ alternatives.

Use Scenario: Three-phase inverter driving brushless DC motor in column-assist EPS systems.

IC Role / Device Role / Timing Role: High-side and low-side switch in each phase leg, handling 60–90 A peak phase current with PWM switching.

Use Value: 175 °C rated junction and 72 mJ avalanche energy ensure robustness during motor stall and short-circuit events.

Onboard Charger (OBC) Primary Switch

48 V HVAC Compressor Inverter

Use Scenario: Active clamp flyback or LLC resonant converter primary switch in bidirectional OBC modules.

IC Role / Device Role / Timing Role: Main power switch handling 200+ A pulsed drain current during ZVS transitions at 200–500 kHz.

Use Value: Low C_oss (1137–1592 pF) and Cr_ss (134–188 pF) reduce switching losses and improve ZVS behavior across wide load range.

Use Scenario: High-power inverter supplying 3-phase AC to variable-speed HVAC compressor in electric vehicles.

IC Role / Device Role / Timing Role: Phase-leg switch operating continuously at 120–150 A RMS with 10 kHz PWM modulation.

Use Value: 134 A continuous rating at T_C = 125 °C allows full output power without forced air cooling in sealed under-dash enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFS7530TRPbF	R_DS(on) = 2.0 mΩ @ 10 V; R_thJC = 0.95 °C/W; non-AEC-Q101 rated	Lacks automotive qualification; suitable for industrial UPS or telecom PSUs only	Select when AEC-Q101 is not required and cost sensitivity outweighs thermal margin.
STL220N4F7AG	R_DS(on) = 1.8 mΩ @ 10 V; 175 °C rated; PowerFLAT 8 × 8 package with different pinout	Requires PCB layout change due to non-identical terminal mapping and thermal pad geometry	Choose for marginally lower R_DS(on) where redesign is acceptable and ST ecosystem is preferred.

Compared with IRFS7530TRPbF and STL220N4F7AG, SQJQ150E-T1_GE3 uniquely combines AEC-Q101 qualification, 0.8 °C/W thermal resistance, and validated UIS ruggedness - making it the preferred choice for production automotive power stages where reliability and thermal performance are co-critical.

Availability

SQJQ150E-T1_GE3 is available at Aetrix Electronics and suitable for automotive DC-DC converters, electric power steering systems, and onboard charger designs requiring stable component supply and long-term lifecycle support.

Supply support for SQJQ150E-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQJQ150E-T1_GE3 belongs to Vishay's TrenchFET® Gen IV automotive power MOSFET family, engineered specifically for high-current, high-temperature 48 V automotive subsystems including traction inverters and energy conversion modules.

FAQ

What is the maximum continuous drain current rating for SQJQ150E-T1_GE3 at 125 °C case temperature?

The SQJQ150E-T1_GE3 supports 134 A continuous drain current at T_C = 125 °C, as specified in its Absolute Maximum Ratings table. This rating reflects derating from the 233 A value at 25 °C and is validated for sustained operation in engine compartment environments. The device maintains R_DS(on) ≤ 3.5 mΩ at this condition, ensuring predictable thermal performance in automotive power modules.

Is SQJQ150E-T1_GE3 qualified to AEC-Q101 standards?

Yes, SQJQ150E-T1_GE3 is explicitly AEC-Q101 qualified per the Vishay datasheet (S20-0446-Rev. A). It has undergone stress testing including temperature cycling, humidity bias HAST, and high-temperature gate bias - confirming suitability for automotive powertrain and chassis applications. The "GE3" suffix denotes tape-and-reel packaging compliant with J-STD-020 moisture sensitivity level 1.

What is the gate threshold voltage range for SQJQ150E-T1_GE3?

The gate-source threshold voltage (V_GS(th)) for SQJQ150E-T1_GE3 is specified as 2.0 V minimum, 2.8 V typical, and 3.5 V maximum at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers while maintaining noise immunity in electrically noisy automotive environments.

Does SQJQ150E-T1_GE3 have an integrated body diode, and what are its key parameters?

Yes, SQJQ150E-T1_GE3 includes a monolithic body diode with forward voltage V_SD = 0.8–1.1 V at I_F = 50 A and V_GS = 0 V. Its reverse recovery time t_rr is 40–80 ns and Q_rr is 34–68 nC at V_DD = 32 V, I_FM = 15 A, and di/dt = 100 A/μs - enabling efficient freewheeling in synchronous rectification and H-bridge topologies.

What is the thermal resistance from junction to ambient for SQJQ150E-T1_GE3 on a standard PCB?

The junction-to-ambient thermal resistance (R_thJA) for SQJQ150E-T1_GE3 is 44 °C/W when mounted on a 1" square FR4 PCB, as measured per JEDEC JESD51-3. This value assumes standard 2 oz copper and no additional heatsinking. For higher power dissipation, the 0.8 °C/W R_thJC enables direct thermal interface to external heatsinks or cold plates to achieve sub-10 °C/W system-level resistance.

SQJQ150E-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 8 x 8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 233A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.9mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 92 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4643 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 187W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 8 x 8

SQJQ150E-T1_GE3 FAQ

1.How can I place an order for SQJQ150E-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQJQ150E-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQJQ150E-T1_GE3 reliable?

The price and inventory of SQJQ150E-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJQ150E-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQJQ150E-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJQ150E-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQJQ150E-T1_GE3?

SQJQ150E-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQJQ150E-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQJQ150E-T1_GE3?

For technical support, including SQJQ150E-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJQ150E-T1_GE3 requirements.

6.How does Aetrix verify that SQJQ150E-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQJQ150E-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJQ150E-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQJQ150E-T1_GE3?

All SQJQ150E-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJQ150E-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQJQ150E-T1_GE3 part is unused and in its original packaging.

Return procedure for SQJQ150E-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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