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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQJQ186ER-T1_GE3

Name: SQJQ186ER-T1_GE3
Brand: Vishay Siliconix
SKU: SQJQ186ER-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQJQ186ER-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-PowerSMD, Gull Wing

Datasheet:: SQJQ186ER-T1_GE3.pdf

Description:: AUTOMOTIVE N-CHANNEL 80 V (D-S)

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Product details

Overview

SQJQ186ER-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® Gen IV power MOSFET with 80 V V_DS, 2.3 mΩ R_DS(on) at 10 V V_GS, and 329 A continuous drain current at T_C = 25 °C, housed in a thermally optimized PowerPAK® 8 × 8LR package for high-current motor control and DC-DC conversion in under-hood EV systems.

For engineers reviewing the SQJQ186ER-T1_GE3 datasheet, SQJQ186ER-T1_GE3 pinout, SQJQ186ER-T1_GE3 application, or SQJQ186ER-T1_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, 175 °C junction rating, ultra-low R_DS(on), 0.25 °C/W R_thJC, and 100% UIS testing - critical for automotive traction inverters, 48 V battery management, and high-reliability industrial power stages.

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon technology to achieve low conduction loss and fast switching with Q_g = 123–185 nC and Q_gd = 26 nC at V_DS = 40 V, enabling efficient operation in hard-switched synchronous buck converters and half-bridge motor drivers up to 100 kHz.

Its PowerPAK® 8 × 8LR package features exposed-drain thermal pad and bottom-side source terminals (S1–S3), delivering R_thJA = 44 °C/W on 1" FR4 PCB and supporting >200 W continuous dissipation at T_C = 125 °C - validated by 100% R_g and UIS screening per AEC-Q101.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - supports 48 V nominal bus systems with 67% voltage margin against transients in automotive start-stop and regenerative braking.
R_DS(on) @ 10 V	2.3 mΩ max - enables <1.2 W conduction loss at 50 A, reducing heatsink requirements in compact power modules.
I_D (cont.)	329 A @ T_C = 25 °C - delivers high peak power density for short-duration load dumps and motor stall conditions.
Q_g	123–185 nC - balances gate drive loss and switching speed for optimal efficiency in 40–100 kHz PWM applications.
R_thJC	0.25 °C/W - allows direct thermal coupling to cold plates or heatsinks, enabling >500 W thermal headroom in forced-air-cooled designs.
T_J Range	−55 to +175 °C - certified for under-hood placement in electric power steering (EPS), HVAC compressors, and battery disconnect units.
AEC-Q101	Qualified - meets stress test requirements for automotive electronics including HTGB, HTRB, and temperature cycling.

Pinout & Package

Package: PowerPAK® 8 × 8LR - 8 mm × 8 mm × 1.6 mm thin-profile surface-mount package with exposed drain paddle for low-inductance, high-current routing and enhanced thermal transfer to PCB ground plane.

Pin/Terminal	Circuit Role	Design Meaning
G (Pin 4)	Gate input	Single gate terminal; low R_g (0.6–2.0 Ω) minimizes Miller-induced shoot-through risk in high-dV/dt environments.
S1, S2, S3	Source connections	Three parallel source terminals reduce bond-wire inductance and improve current sharing in high-frequency switching.
D (Pins 5–8)	Drain connections	Four drain pins plus large exposed copper paddle provide low-resistance path to PCB thermal plane and minimize loop inductance.

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers 25% lower R_DS(on) vs. prior generation while maintaining robust avalanche capability (E_AS = 180 mJ).
AEC-Q101 qualification	Validated for automotive use with full stress testing including 1000-cycle temperature cycling and 1000-hr HTRB at 150 °C.
100% R_g and UIS tested	Ensures gate robustness against ESD and system-level overvoltage events without derating in production designs.
Thin 1.6 mm profile	Enables stacking of dual-sided power modules and integration into space-constrained battery pack control units.
Low C_iss/C_oss ratio	C_iss = 7537–10552 pF, C_oss = 1182–1655 pF - improves ZVS compatibility and reduces capacitive turn-on loss in resonant topologies.

Applications

Electric Power Steering (EPS)	48 V Mild Hybrid DC-DC Converter
Use Scenario: High-efficiency three-phase inverter driving brushless motor in steering column assembly, operating continuously at 85 °C ambient. IC Role / Device Role / Timing Role: Low-side switching element in 60 kHz PWM-controlled H-bridge, handling peak currents >250 A during torque assist. Use Value: 2.3 mΩ R_DS(on) and 175 °C T_J rating enable >98.5% inverter efficiency and eliminate need for active cooling in EPS housing.	Use Scenario: Primary-side synchronous rectifier in bidirectional 3 kW LLC resonant converter linking 48 V and 12 V domains in mild hybrid vehicles. IC Role / Device Role / Timing Role: High-current, low-loss switch operating in ZVS mode with 100 ns fall time and 26 nC Q_gd. Use Value: Ultra-low Q_gd/Q_g ratio (21%) minimizes dead-time losses and improves light-load regulation stability.
Onboard Charger (OBC) Input Stage	Battery Disconnect Unit (BDU)
Use Scenario: AC/DC PFC boost switch in 6.6 kW single-phase OBC, subjected to line surges and thermal cycling across −40 to +105 °C. IC Role / Device Role / Timing Role: Fast-switching, avalanche-rugged N-channel MOSFET in continuous conduction mode (CCM) boost topology. Use Value: 180 mJ E_AS and 60 A I_AS withstand repeated 600 V line transients without failure, extending field reliability beyond 15-year vehicle life.	Use Scenario: Main contactor replacement in high-voltage battery pack, performing isolation during crash detection and thermal runaway events. IC Role / Device Role / Timing Role: Solid-state high-current switch rated for 300 A continuous and 1600 A pulsed fault current interruption. Use Value: 545 A continuous source current (diode conduction) supports reverse energy recirculation during rapid discharge, eliminating external freewheeling diodes.

Electric Power Steering (EPS)

48 V Mild Hybrid DC-DC Converter

Use Scenario: High-efficiency three-phase inverter driving brushless motor in steering column assembly, operating continuously at 85 °C ambient.

IC Role / Device Role / Timing Role: Low-side switching element in 60 kHz PWM-controlled H-bridge, handling peak currents >250 A during torque assist.

Use Value: 2.3 mΩ R_DS(on) and 175 °C T_J rating enable >98.5% inverter efficiency and eliminate need for active cooling in EPS housing.

Use Scenario: Primary-side synchronous rectifier in bidirectional 3 kW LLC resonant converter linking 48 V and 12 V domains in mild hybrid vehicles.

IC Role / Device Role / Timing Role: High-current, low-loss switch operating in ZVS mode with 100 ns fall time and 26 nC Q_gd.

Use Value: Ultra-low Q_gd/Q_g ratio (21%) minimizes dead-time losses and improves light-load regulation stability.

Onboard Charger (OBC) Input Stage

Battery Disconnect Unit (BDU)

Use Scenario: AC/DC PFC boost switch in 6.6 kW single-phase OBC, subjected to line surges and thermal cycling across −40 to +105 °C.

IC Role / Device Role / Timing Role: Fast-switching, avalanche-rugged N-channel MOSFET in continuous conduction mode (CCM) boost topology.

Use Value: 180 mJ E_AS and 60 A I_AS withstand repeated 600 V line transients without failure, extending field reliability beyond 15-year vehicle life.

Use Scenario: Main contactor replacement in high-voltage battery pack, performing isolation during crash detection and thermal runaway events.

IC Role / Device Role / Timing Role: Solid-state high-current switch rated for 300 A continuous and 1600 A pulsed fault current interruption.

Use Value: 545 A continuous source current (diode conduction) supports reverse energy recirculation during rapid discharge, eliminating external freewheeling diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 80 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N8F7AG	80 V, 2.2 mΩ R_DS(on), 220 A I_D, PowerFLAT™ 8 × 8 package, no AEC-Q101 listing	Lacks automotive qualification; suitable for industrial UPS but not for safety-critical EPS or BDU	Select only for non-automotive 48 V systems where AEC-Q101 is not mandated.
IRFS7537PbF	75 V, 2.4 mΩ R_DS(on), 300 A I_D, TO-263 package, AEC-Q101 qualified	Larger footprint (10.16 × 15.88 mm), higher R_thJA (50 °C/W), less suitable for ultra-thin modules	Preferred when legacy TO-263 layout reuse is required and thermal budget allows 0.5 °C/W higher R_thJC.

Compared with STL220N8F7AG and IRFS7537PbF, SQJQ186ER-T1_GE3 uniquely combines AEC-Q101 qualification, 1.6 mm thin profile, 0.25 °C/W R_thJC, and 329 A rating - making it the only option for next-gen compact, high-power-density automotive traction and battery systems requiring both safety compliance and thermal headroom.

Availability

SQJQ186ER-T1_GE3 is available at Aetrix Electronics and suitable for electric power steering (EPS), onboard chargers (OBC), and battery disconnect units (BDU) requiring stable component supply, long-term automotive lifecycle support, and traceable AEC-Q101-compliant sourcing.

Supply support for SQJQ186ER-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQJQ186ER-T1_GE3 belongs to Vishay's TrenchFET® Gen IV automotive power MOSFET family, engineered specifically for high-current, high-temperature traction and energy storage applications demanding AEC-Q101 reliability and ultra-low R_DS(on).

FAQ

What is the maximum continuous drain current rating for SQJQ186ER-T1_GE3 at 125 °C case temperature?

The SQJQ186ER-T1_GE3 supports 189 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations of the PowerPAK® 8 × 8LR package under sustained high-temperature operation and must be used for thermal design validation in automotive under-hood environments where case temperatures exceed 100 °C.

Does SQJQ186ER-T1_GE3 have integrated avalanche ruggedness, and how is it verified?

Yes, SQJQ186ER-T1_GE3 is rated for 60 A single-pulse avalanche current (I_AS) and 180 mJ single-pulse avalanche energy (E_AS) at L = 0.1 mH. It undergoes 100% unclamped inductive switching (UIS) testing per AEC-Q101 requirements, ensuring robustness against inductive load turn-off transients in motor drives and solenoid controls without external snubbers.

What is the gate threshold voltage range for SQJQ186ER-T1_GE3, and how does it affect drive circuit design?

The gate-source threshold voltage (V_GS(th)) for SQJQ186ER-T1_GE3 is 2.5–3.5 V at I_D = 250 μA. This tight range ensures consistent turn-on behavior across temperature and process variation, allowing reliable operation with standard 5 V or 3.3 V logic-level gate drivers - though 10 V V_GS is recommended to achieve full 2.3 mΩ R_DS(on) performance.

How does the PowerPAK® 8 × 8LR package of SQJQ186ER-T1_GE3 improve thermal performance compared to TO-263?

The PowerPAK® 8 × 8LR package of SQJQ186ER-T1_GE3 achieves 0.25 °C/W junction-to-case thermal resistance - 35% lower than typical TO-263 MOSFETs - due to its exposed-drain copper paddle and bottom-side source terminals. This enables direct thermal coupling to PCB ground planes and eliminates thermal interface material, simplifying thermal design in space-constrained automotive modules.

Is SQJQ186ER-T1_GE3 compatible with lead-free reflow soldering, and what is the peak temperature limit?

Yes, SQJQ186ER-T1_GE3 is lead (Pb)-free and halogen-free, qualified for standard lead-free reflow with a peak soldering temperature of 260 °C, per JEDEC J-STD-020. The device uses a matte tin finish and follows Vishay's documented solder profile (www.vishay.com/doc?73257); note that the singulated lead tip is exposed copper and does not require solder fillet formation for reliable interconnection.

SQJQ186ER-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: 8-PowerSMD, Gull Wing

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 329A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.3mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 185 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 10552 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 600W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 8 x 8

SQJQ186ER-T1_GE3 FAQ

1.How can I place an order for SQJQ186ER-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQJQ186ER-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQJQ186ER-T1_GE3 reliable?

The price and inventory of SQJQ186ER-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJQ186ER-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQJQ186ER-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJQ186ER-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQJQ186ER-T1_GE3?

SQJQ186ER-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQJQ186ER-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQJQ186ER-T1_GE3?

For technical support, including SQJQ186ER-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJQ186ER-T1_GE3 requirements.

6.How does Aetrix verify that SQJQ186ER-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQJQ186ER-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJQ186ER-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQJQ186ER-T1_GE3?

All SQJQ186ER-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJQ186ER-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQJQ186ER-T1_GE3 part is unused and in its original packaging.

Return procedure for SQJQ186ER-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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