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Vishay Siliconix SQJQ186E-T1_GE3
- Part No.:
- SQJQ186E-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 8 x 8
- Datasheet:
-
SQJQ186E-T1_GE3.pdf
- Description:
- AUTOMOTIVE N-CHANNEL 80 V (D-S)
- Quantity:
- Payment:
- Shipping:
Inventory:1,686
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Product details
Overview
SQJQ186E-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® Gen IV power MOSFET with 80 V VDS, 2.3 mΩ RDS(on) at VGS = 10 V and 20 A, 245 A continuous drain current at TC = 25 °C, and AEC-Q101 qualification for under-hood motor control and DC-DC converter applications.
For engineers reviewing the SQJQ186E-T1_GE3 datasheet, SQJQ186E-T1_GE3 pinout, SQJQ186E-T1_GE3 application, or SQJQ186E-T1_GE3 equivalent, key selection criteria include its 175 °C junction rating, 0.42 °C/W RthJC, low gate charge (123 nC typ), and PowerPAK 8 × 8L package optimized for high-current, thermally constrained automotive power stages.
Technical Context
This MOSFET employs trench-based silicon architecture to achieve low on-resistance and fast switching with controlled Qgd/Qgs ratio (26/36 nC), supporting efficient synchronous rectification in 48 V–60 V automotive DC-DC converters. Its 100 % UIS-tested ruggedness ensures reliability in inductive load switching.
The device integrates a robust body diode with trr = 63 ns (typ) and Qrr = 105 nC (typ) at IF = 10 A, enabling stable freewheeling in H-bridge motor drivers without external Schottky supplementation. Thermal design is anchored by RthJC = 0.42 °C/W and thin 1.9 mm profile for PCB-constrained layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 80 V - Supports 48 V nominal bus systems with ≥2× voltage margin for load dump transients |
| RDS(on) @ VGS = 10 V | 2.3 mΩ max - Enables <1.2 W conduction loss at 20 A, critical for thermal management in compact modules |
| ID (continuous, TC = 25 °C) | 245 A - Delivers high peak power in short-duration engine start-stop or EPS assist cycles |
| Qg (total gate charge) | 123 nC typ - Balances switching speed and gate driver power demand in 100–300 kHz PWM stages |
| TJ operating range | −55 to +175 °C - Certified for under-hood placement near engines or transmissions without derating |
| RthJC | 0.42 °C/W - Allows direct heatsinking to metal chassis or copper pour, reducing thermal interface complexity |
| AEC-Q101 qualified | Yes - Validated for automotive electronics per stress test requirements including HTGB, HTRB, and UIS |
Pinout & Package
Package: PowerPAK® 8 × 8L - 8 mm × 8 mm footprint with exposed drain pad on bottom side, 1.9 mm height, optimized for high-current PCB mounting and thermal transfer to internal ground planes.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control input; requires ≤1 Ω series resistance to damp ringing due to low Rg = 0.6–2 Ω |
| 2, 3, 4 (S) | Source | Three parallel source terminals reduce bond wire inductance and improve current sharing in high-di/dt switching |
| K (Drain) | Drain (exposed pad) | Thermally and electrically connected to PCB copper; primary heat path and high-current return node |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV silicon | Enables 2.3 mΩ RDS(on) in 8 × 8 mm package while maintaining >58 A single-pulse avalanche capability |
| AEC-Q101 qualification | Validated for automotive use with 100 % Rg and UIS testing per stress test plan |
| Low-profile 1.9 mm height | Permits integration into space-constrained ECU modules where Z-height is limited by adjacent connectors or shielding |
| Enhanced body diode performance | trr = 63 ns and Qrr = 105 nC support clean commutation in bidirectional motor drives without shoot-through risk |
| Exposed drain thermal pad | Provides direct thermal path to PCB with RthJA = 40 °C/W on 1″ FR4, enabling passive cooling in fanless designs |
Applications
| Electric Power Steering (EPS) | 48 V Automotive DC-DC Converter |
|---|---|
Use Scenario: High-efficiency three-phase inverter driving brushless DC assist motor during steering maneuvers. IC Role / Device Role / Timing Role: Low-side switching element in half-bridge configuration, handling up to 245 A peak phase current. Use Value: 2.3 mΩ RDS(on) minimizes I²R losses during sustained assist, extending battery range and reducing heatsink mass. |
Use Scenario: Synchronous rectifier in secondary-side of isolated 48 V–12 V buck converter for ADAS domain controllers. IC Role / Device Role / Timing Role: Secondary-side power switch operating at 250 kHz with tight dead-time control. Use Value: Low Qgd/Qgs ratio enables precise zero-voltage switching transition, improving efficiency above 95 %. |
| Engine Start-Stop System | Onboard Charger (OBC) Auxiliary Supply |
Use Scenario: High-current load switch controlling 12 V auxiliary bus during engine cranking events. IC Role / Device Role / Timing Role: Single-pole, high-side or low-side power switch with integrated overtemperature protection. Use Value: 175 °C rated junction temperature withstands ambient spikes up to 150 °C near exhaust manifolds. |
Use Scenario: Primary-side high-side switch in auxiliary 12 V SMPS powering OBC control logic and gate drivers. IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET in flyback or forward topology with 80 V breakdown margin. Use Value: 770 A pulsed drain current supports surge currents during cold-start sequencing without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFS7430TRPbF | RDS(on) = 2.7 mΩ @ 10 V; RthJC = 0.55 °C/W; same PowerSO-8 package but taller (2.3 mm) | Lower current rating (195 A) and higher thermal resistance limit power density in compact modules | Preferred when legacy layout re-use is required and 2.7 mΩ loss is acceptable |
| STL220N6F7AG | RDS(on) = 2.0 mΩ @ 10 V; AEC-Q101 qualified; PowerFLAT 8 × 8 HV package with top-side cooling option | Requires different thermal interface design due to top-side heatsink compatibility and no bottom-exposed drain | Selected when dual-sided cooling or lower RDS(on) is prioritized over established bottom-heat-path layouts |
Compared with IRFS7430TRPbF and STL220N6F7AG, SQJQ186E-T1_GE3 offers the lowest RthJC (0.42 °C/W) and thinnest profile (1.9 mm), making it optimal for space- and thermal-constrained automotive power stages where PCB-level heatsinking dominates thermal management.
Availability
SQJQ186E-T1_GE3 is available at Aetrix Electronics and suitable for electric power steering, 48 V DC-DC conversion, and engine start-stop systems requiring stable component supply across extended automotive production lifecycles.
Supply support for SQJQ186E-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQJQ186E-T1_GE3 belongs to Vishay's TrenchFET Gen IV automotive MOSFET family, engineered specifically for high-current, high-temperature power conversion in next-generation 48 V architectures and electrified vehicle subsystems.
FAQ
What is the maximum continuous drain current for SQJQ186E-T1_GE3 at 125 °C case temperature?
The SQJQ186E-T1_GE3 supports 141 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK 8 × 8L package and ensures reliable operation in high-ambient under-hood environments where case temperatures routinely exceed 100 °C. The SQJQ186E-T1_GE3 maintains full functionality across its −55 °C to +175 °C junction range.
Is SQJQ186E-T1_GE3 suitable for synchronous rectification in a 48 V to 12 V DC-DC converter?
Yes, SQJQ186E-T1_GE3 is well-suited for synchronous rectification in 48 V–12 V DC-DC converters due to its low 2.3 mΩ RDS(on), fast switching parameters (td(on) = 22 ns typ, tf = 16 ns typ), and low Qgd/Qgs ratio. Its 80 V VDS rating provides sufficient margin against voltage overshoot during transient load steps. The SQJQ186E-T1_GE3 also features a robust body diode with trr = 63 ns, supporting clean freewheeling during dead-time intervals.
Does SQJQ186E-T1_GE3 have AEC-Q101 qualification documentation available?
Yes, SQJQ186E-T1_GE3 is explicitly AEC-Q101 qualified, as confirmed in the Vishay datasheet revision S22-0351-Rev. A. Qualification includes 100 % UIS (unclamped inductive switching) and Rg testing per AEC-Q101 stress test conditions. Full qualification reports are available upon request through Vishay's automotive technical support team at [email protected]. The SQJQ186E-T1_GE3 meets all requirements for Grade 0 (−40 °C to +175 °C) automotive applications.
What is the thermal resistance from junction to case (RthJC) for SQJQ186E-T1_GE3?
The junction-to-case (drain) thermal resistance RthJC for SQJQ186E-T1_GE3 is 0.42 °C/W, measured under standard test conditions with the drain pad soldered to a large copper area. This low value enables efficient heat transfer from the die directly to the PCB or heatsink, reducing reliance on external cooling solutions. For thermal modeling, the SQJQ186E-T1_GE3 datasheet provides normalized transient impedance curves to support dynamic power dissipation analysis.
Can SQJQ186E-T1_GE3 be used in a high-side switch configuration?
Yes, SQJQ186E-T1_GE3 can be used in high-side configurations, provided appropriate gate drive circuitry delivers VGS ≥ 10 V relative to the source terminal - typically implemented using a bootstrap or isolated gate driver. Its ±20 V VGS rating and 80 V VDS support common 12 V or 48 V high-side applications such as load switching or precharge control. The SQJQ186E-T1_GE3's 175 °C TJ rating ensures reliability even with elevated source potential in high-side topologies.
SQJQ186E-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® 8 x 8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 245A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 2.3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 185 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 10552 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 357W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 8 x 8
SQJQ186E-T1_GE3 FAQ
1.How can I place an order for SQJQ186E-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJQ186E-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJQ186E-T1_GE3 reliable?
The price and inventory of SQJQ186E-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJQ186E-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJQ186E-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJQ186E-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJQ186E-T1_GE3?
SQJQ186E-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJQ186E-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJQ186E-T1_GE3?
For technical support, including SQJQ186E-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJQ186E-T1_GE3 requirements.
6.How does Aetrix verify that SQJQ186E-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJQ186E-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJQ186E-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJQ186E-T1_GE3?
All SQJQ186E-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJQ186E-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJQ186E-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJQ186E-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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