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Vishay Siliconix SQJQ480E-T1_GE3
- Part No.:
- SQJQ480E-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 8 x 8
- Datasheet:
-
SQJQ480E-T1_GE3.pdf
- Description:
- MOSFET N-CH 80V 150A PPAK 8 X 8
- Quantity:
- Payment:
- Shipping:
Inventory:5,416
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Product details
Overview
SQJQ480E-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET with 80 V VDS, 3.0 mΩ RDS(on) at VGS = 10 V, and 150 A continuous drain current at TC = 25 °C. It operates up to +175 °C junction temperature and is housed in a thermally enhanced PowerPAK 8 × 8L package, targeting high-current DC-DC converters and motor control in engine management systems.
For engineers reviewing the SQJQ480E-T1_GE3 datasheet, SQJQ480E-T1_GE3 pinout, SQJQ480E-T1_GE3 application, or SQJQ480E-T1_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, 1.1 °C/W RthJC, 100% Rg and UIS testing, thin 1.9 mm profile, and guaranteed performance across -55 °C to +175 °C.
Technical Context
This MOSFET uses trench-gate silicon technology optimized for low conduction loss and fast switching in high-power automotive loads. Its gate threshold voltage (2.5–3.5 V) enables robust drive compatibility with standard 10 V gate drivers, while its 82 nC typical total gate charge supports efficient PWM operation at frequencies up to several hundred kHz.
The device integrates a body diode with 0.7–1.2 V forward voltage at 40 A and exhibits 140 mJ single-pulse avalanche energy. Thermal design leverages direct-drain thermal path via the exposed copper bottom pad and low 1.1 °C/W junction-to-case resistance, enabling high-power density mounting on PCBs with minimal heatsinking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 80 V - Maximum blocking voltage for 12 V/24 V automotive battery rail protection and high-side switching |
| RDS(on) @ 10 V | 3.0 mΩ max - Enables <1 W conduction loss at 150 A, critical for thermal management in compact modules |
| ID (cont.) | 150 A @ TC = 25 °C - Supports high-current motor phases and starter solenoid drivers without parallel devices |
| TJ Range | -55 °C to +175 °C - Fully qualified for under-hood environments including turbocharger actuators and transmission control units |
| Qg | 82 nC typ - Balances switching speed and gate driver power demand in 100–500 kHz SMPS designs |
| RthJC | 1.1 °C/W - Allows direct thermal coupling to heatsink or copper plane, reducing system-level thermal resistance by >50% vs. SO-8 |
| AEC-Q101 | Qualified - Meets stress test requirements for automotive electronics, including temperature cycling and HTRB |
Pinout & Package
Package: PowerPAK 8 × 8L - leadless, surface-mount, thermally enhanced package with exposed drain pad on bottom; 8.1 mm × 8.1 mm footprint, 1.9 mm height, RoHS-compliant and fully lead-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; requires ≤1 Ω series resistance to damp ringing due to 0.8 Ω typical gate resistance |
| 2 (S) | Source | Power return node; tied to PCB ground plane; shares thermal path with drain via substrate |
| 3 (S) | Source | Second source connection for lower parasitic inductance in high-di/dt applications |
| 4 (S) | Source | Third source connection; reduces common-source inductance and improves gate-drive stability |
| Drain (bottom pad) | Drain | Primary power output and thermal interface; soldered directly to large copper area for heat extraction |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers lowest RDS(on) × area ratio in 80 V class, enabling smaller PCB real estate vs. planar MOSFETs |
| AEC-Q101 qualification | Validated for automotive mission profiles including 1000+ thermal cycles and 1000 h HTOL at 175 °C |
| 100% Rg and UIS tested | Ensures gate robustness against overvoltage transients and reliable unclamped inductive switching in motor drives |
| Exposed drain thermal pad | Provides 1.1 °C/W junction-to-case path-critical for maintaining <150 °C TJ in 100 W+ power stages |
| Thin 1.9 mm profile | Enables stacking in multi-layer power modules and integration into space-constrained ECU housings |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | 48 V Mild Hybrid DC-DC Converter |
|---|---|
Use Scenario: High-speed, high-current switching of solenoid fuel injectors in gasoline direct injection systems. IC Role / Device Role / Timing Role: Low-side switch controlling injector coil current with <30 ns turn-off delay and 23 ns fall time. Use Value: 3.0 mΩ RDS(on) minimizes I²R heating during 15 ms dwell time; 175 °C rating ensures reliability near hot engine blocks. | Use Scenario: Primary-side synchronous rectification in bidirectional 48 V/12 V DC-DC converters for start-stop and regenerative braking. IC Role / Device Role / Timing Role: High-efficiency power switch operating at 200–300 kHz with low Qg/RDS(on) tradeoff. Use Value: 82 nC Qg and 0.003 Ω RDS(on) jointly reduce total switching + conduction losses below 1.2 W at 100 A output. |
| Electric Power Steering (EPS) Motor Phase Leg | Automotive HVAC Blower Motor Inverter |
Use Scenario: Half-bridge phase leg in 3-phase inverter driving brushless DC motor for steering assist. IC Role / Device Role / Timing Role: High-current N-channel switch handling 120 A peak phase current with integrated body diode commutation. Use Value: 140 mJ EAS withstands inductive kickback during fault conditions; 0.7–1.2 V VSD limits freewheeling loss during PWM dead-time. | Use Scenario: High-side or low-side switching in 24 V blower motor inverters used in cabin climate control systems. IC Role / Device Role / Timing Role: Robust power switch rated for continuous 87 A at 125 °C case temperature in sealed plastic enclosures. Use Value: AEC-Q101 qualification and -55 °C to +175 °C operation ensure startup reliability in extreme ambient conditions (e.g., desert parking). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 80 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1404ZPBF | RDS(on) = 4.7 mΩ @ 10 V; TO-220 package; RthJC = 1.25 °C/W; not AEC-Q101 qualified | Lacks automotive qualification; larger footprint and higher thermal resistance limit power density | Use only in non-automotive industrial or legacy designs where qualification and size are not constraints |
| STL220N6F7 | RDS(on) = 2.2 mΩ @ 10 V; PowerFLAT 8 × 8; AEC-Q101 qualified; Qg = 115 nC | Lower RDS(on) but higher gate charge increases driver loss; same package outline but different pinout | Select when lowest conduction loss is prioritized and gate driver can support higher Qg; verify layout compatibility |
Compared with IRF1404ZPBF and STL220N6F7, SQJQ480E-T1_GE3 delivers optimal balance of automotive qualification, thermal performance (1.1 °C/W), and gate drive efficiency (82 nC), making it preferred for new AEC-Q101-compliant designs requiring high current in minimal volume.
Availability
SQJQ480E-T1_GE3 is available at Aetrix Electronics and suitable for engine control units, 48 V mild hybrid converters, and electric power steering systems requiring stable component supply across extended automotive product lifecycles.
Supply support for SQJQ480E-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing applications.
The SQJQ480E-T1_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-current, high-temperature power switching in next-generation vehicle electrification systems.
FAQ
What is the maximum continuous drain current rating for SQJQ480E-T1_GE3 at 125 °C case temperature?
The SQJQ480E-T1_GE3 supports 87 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK 8 × 8L package and ensures safe operation within the 175 °C maximum junction temperature limit. Designers must verify PCB copper area and airflow to maintain TC ≤ 125 °C under full load.
Is SQJQ480E-T1_GE3 suitable for synchronous rectification in a 400 kHz DC-DC converter?
Yes, SQJQ480E-T1_GE3 is suitable for synchronous rectification at 400 kHz due to its 19 ns typical turn-on delay, 7.3 ns rise time, and 82 nC total gate charge-parameters validated in the datasheet's dynamic characteristics section. Its low 3.0 mΩ RDS(on) minimizes conduction loss, while the 1.1 °C/W RthJC supports thermal management at high switching frequencies.
Does SQJQ480E-T1_GE3 have an integrated body diode, and what is its forward voltage?
Yes, SQJQ480E-T1_GE3 includes an inherent body diode with a forward voltage (VSD) of 0.7–1.2 V at IF = 40 A and VGS = 0 V, per the Source-Drain Diode Characteristics table. This diode supports freewheeling current in inductive loads such as motor windings and solenoids, and its performance is characterized across temperature from -55 °C to +150 °C.
What is the gate threshold voltage range for SQJQ480E-T1_GE3, and how does it affect drive compatibility?
The gate threshold voltage (VGS(th)) for SQJQ480E-T1_GE3 is 2.5–3.5 V at ID = 250 μA, ensuring reliable turn-on with standard 3.3 V or 5 V logic-level drivers when operated above 4.5 V. For full enhancement and minimal RDS(on), a 10 V gate drive is recommended-consistent with its 0.003 Ω specification and compatible with common automotive gate drivers like the UCC27531.
How is thermal performance validated for SQJQ480E-T1_GE3, and what is the significance of RthJC = 1.1 °C/W?
SQJQ480E-T1_GE3's RthJC = 1.1 °C/W is measured junction-to-case (drain) under standardized conditions and verified per JEDEC JESD51-14. This low value confirms highly efficient heat transfer from die to the exposed drain pad, enabling direct mounting to heatsinks or thick copper layers. It allows designers to achieve >100 W dissipation with <110 °C temperature rise from case to junction-critical for under-hood reliability.
SQJQ480E-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 8 x 8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 144 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 8625 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 136W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 8 x 8
SQJQ480E-T1_GE3 FAQ
1.How can I place an order for SQJQ480E-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQJQ480E-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQJQ480E-T1_GE3 reliable?
The price and inventory of SQJQ480E-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQJQ480E-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQJQ480E-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQJQ480E-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQJQ480E-T1_GE3?
SQJQ480E-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQJQ480E-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQJQ480E-T1_GE3?
For technical support, including SQJQ480E-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQJQ480E-T1_GE3 requirements.
6.How does Aetrix verify that SQJQ480E-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQJQ480E-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQJQ480E-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQJQ480E-T1_GE3?
All SQJQ480E-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQJQ480E-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQJQ480E-T1_GE3 part is unused and in its original packaging.
Return procedure for SQJQ480E-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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