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Vishay Siliconix SQM100N02-3M5L_GE3
- Part No.:
- SQM100N02-3M5L_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SQM100N02-3M5L_GE3.pdf
- Description:
- MOSFET N-CH 20V 100A TO263
- Quantity:
- Payment:
- Shipping:
Inventory:8,719
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Product details
Overview
SQM100N02-3M5L from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET optimized for high-current 20 V DC-DC conversion and motor control in under-hood applications. It delivers 100 A continuous drain current at TC = 25 °C, RDS(on) of 3.5 mΩ at VGS = 10 V and 4.5 mΩ at VGS = 4.5 V, with AEC-Q101 qualification and 175 °C maximum junction temperature.
For engineers reviewing the SQM100N02-3M5L datasheet, SQM100N02-3M5L pinout, SQM100N02-3M5L application, or SQM100N02-3M5L equivalent, key selection criteria include its low RDS(on) at 4.5 V gate drive, 100 % Rg and UIS testing, TO-263 package thermal performance (RthJC = 1 °C/W), and suitability for high-efficiency 12 V automotive power stages.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve ultra-low on-resistance while maintaining robust avalanche capability (EAS = 101 mJ) and fast switching (Qg = 70–110 nC, td(on) = 15–25 ns). Its gate threshold voltage (VGS(th) = 1.5–2.5 V) ensures stable turn-on with standard 3.3 V or 5 V logic-level drivers.
The device is characterized for operation across -55 °C to +175 °C, with RDS(on) normalized to 1.7× at TJ = 175 °C versus 25 °C. Thermal design leverages the TO-263's low junction-to-case resistance (1 °C/W) and validated PCB-mount RthJA = 40 °C/W on 1"² FR4.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - Maximum blocking voltage compatible with 12 V automotive battery systems including load dump transients. |
| RDS(on) @ VGS = 10 V | 3.5 mΩ - Enables <1 W conduction loss at 50 A, critical for high-efficiency power stages. |
| RDS(on) @ VGS = 4.5 V | 4.5 mΩ - Ensures full enhancement with 5 V microcontroller GPIO or automotive PMIC gate drivers. |
| ID (Continuous) | 100 A @ TC = 25 °C - Supports high-current loads such as electric power steering (EPS) or HVAC blowers without forced cooling. |
| EAS | 101 mJ - Withstands repetitive inductive switching energy in motor drives without derating. |
| RthJC | 1 °C/W - Allows direct heatsink mounting for thermal management in space-constrained engine bay environments. |
| Qg | 70–110 nC - Balances switching speed and gate driver power requirements in 100–500 kHz DC-DC converters. |
Pinout & Package
Package: TO-263 (D2PAK), surface-mount, 3-lead, with exposed drain tab for thermal and electrical connection. Dimensions per Vishay Doc. #71198 (Rev. 28-Oct-2024): D = 8.6–9.0 mm, E = 10.15–10.55 mm, L = 14.6–15.9 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path output / heatsink interface | Electrically connected to internal die drain; must be soldered to large copper area or external heatsink for thermal and current handling. |
| Gate | Control input | Low-impedance MOSFET gate requiring <3.5 Ω series resistance to damp ringing; sensitive to ESD (±20 V rating). |
| Source | Reference node / return path | Common source node for current sensing and gate drive reference; connects to low-side shunt or ground plane. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Enables 3.5 mΩ RDS(on) in TO-263, reducing conduction losses by >25 % vs. planar MOSFETs at same die size. |
| AEC-Q101 qualification | Validated for automotive under-hood use including temperature cycling, HTRB, and UIS stress per JESD22-A108/111. |
| 100 % Rg and UIS tested | Every unit screened for gate resistance consistency and single-pulse avalanche robustness-no screening escapes. |
| Low RthJC (1 °C/W) | Permits direct thermal coupling to chassis or heatsink, enabling >80 W dissipation without fan cooling. |
| Enhanced body diode (VSD = 0.86 V typ.) | Reduces freewheeling losses in synchronous rectification and H-bridge motor control compared to standard MOSFETs. |
Applications
| Electric Power Steering (EPS) | Automotive DC-DC Converters |
|---|---|
Use Scenario: High-current bidirectional motor drive in column-assist EPS modules operating up to 175 °C ambient. IC Role / Device Role / Timing Role: Low-side switching element in three-phase inverter bridge, commutated at 10–20 kHz. Use Value: 4.5 mΩ RDS(on) at 4.5 V gate drive enables efficient torque delivery with minimal thermal rise in sealed module housing. |
Use Scenario: Primary switch in 12 V → 5 V/3.3 V buck converter for ADAS camera or radar ECU. IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET in secondary side, operating at 300–500 kHz. Use Value: Low Qg (70–110 nC) and fast fall time (15–25 ns) minimize switching losses and improve light-load efficiency. |
| Engine Cooling Fan Control | Start-Stop Battery Management |
Use Scenario: PWM-controlled 12 V blower motor in radiator fan assembly, subject to vibration and thermal cycling. IC Role / Device Role / Timing Role: High-current unidirectional switch in half-bridge configuration with external flyback diode. Use Value: 101 mJ EAS rating ensures reliable operation during motor stall or sudden load changes without failure. |
Use Scenario: Load switch isolating auxiliary battery circuits during engine cranking events with 20 V transients. IC Role / Device Role / Timing Role: Reverse-polarity and overvoltage protection switch in battery disconnect path. Use Value: 20 V VDS rating and -55 °C to +175 °C operation guarantee functionality across full automotive cold-cranking to hot-soak conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N3LLH6 | 30 V VDS, 2.2 mΩ RDS(on) @ 10 V, PowerFLAT 5x6 package, RthJC = 1.5 °C/W | Better RDS(on) but lower voltage rating; unsuitable for 20 V transient-tolerant designs | Select only if system VDS never exceeds 16 V and PCB space allows smaller footprint. |
| IRF100N04LPM | 40 V VDS, 3.1 mΩ RDS(on) @ 10 V, TO-263, non-AEC-Q101, RthJC = 1.2 °C/W | Lacks automotive qualification and 175 °C rating; higher VDS margin but no guaranteed reliability for under-hood use | Acceptable for industrial motor drives but not for OEM automotive production. |
Compared with STL220N3LLH6 and IRF100N04LPM, SQM100N02-3M5L uniquely combines 20 V rating, AEC-Q101 compliance, 175 °C operation, and 4.5 mΩ RDS(on) at 4.5 V-making it the only drop-in solution for thermally demanding 12 V automotive power switches requiring zero qualification risk.
Availability
SQM100N02-3M5L is available at Aetrix Electronics and suitable for electric power steering (EPS), automotive DC-DC converters, and engine cooling fan control requiring stable component supply across extended temperature and lifetime requirements.
Supply support for SQM100N02-3M5L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
SQM100N02-3M5L belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-current, high-temperature power switching in engine compartment and ADAS applications.
FAQ
What is the maximum continuous drain current rating for SQM100N02-3M5L at 125 °C case temperature?
The SQM100N02-3M5L supports 80 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-263 package and ensures safe operation in high-ambient automotive environments where case temperatures commonly reach 125 °C. The SQM100N02-3M5L maintains stable RDS(on) performance up to TJ = 175 °C.
Is SQM100N02-3M5L qualified for automotive applications per AEC-Q101?
Yes, SQM100N02-3M5L is fully AEC-Q101 qualified, as explicitly stated in the product summary and features section of the Vishay datasheet (S16-1690-Rev. A). This qualification covers stress tests including HTGB, HTRB, TC, UHAST, and UIS, confirming suitability for under-hood automotive use. The SQM100N02-3M5L carries Vishay's automotive material categorization per Doc. #99912.
What is the typical gate charge (Qg) value for SQM100N02-3M5L and how does it impact switching performance?
The SQM100N02-3M5L has a total gate charge (Qg) of 70–110 nC at VGS = 10 V, VDS = 10 V, and ID = 50 A. This moderate Qg enables efficient high-frequency switching (up to 500 kHz) while keeping gate driver power consumption low. The SQM100N02-3M5L's Qgd (11 nC) and Qgs (21 nC) values further support clean voltage transitions and reduced Miller-induced shoot-through risk in bridge configurations.
Can SQM100N02-3M5L operate reliably at 175 °C junction temperature?
Yes, SQM100N02-3M5L is rated for operation from -55 °C to +175 °C junction temperature, with all key parameters-including RDS(on), VGS(th), and IDSS-characterized up to this limit. The SQM100N02-3M5L's normalized RDS(on) curve shows only ~1.7× increase at 175 °C versus 25 °C, confirming stable conduction performance in extreme under-hood conditions.
What is the thermal resistance from junction to case (RthJC) for SQM100N02-3M5L, and why is it important?
The SQM100N02-3M5L has a junction-to-case thermal resistance (RthJC) of 1 °C/W, measured from die junction to the exposed drain tab. This low value is critical for automotive applications because it enables direct thermal coupling to a heatsink or chassis, allowing >80 W power dissipation without active cooling. The SQM100N02-3M5L's RthJC specification is validated per JEDEC standards and confirmed in Vishay Doc. #76456.
SQM100N02-3M5L_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.5mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 110 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5500 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 150W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
SQM100N02-3M5L_GE3 FAQ
1.How can I place an order for SQM100N02-3M5L_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQM100N02-3M5L_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQM100N02-3M5L_GE3 reliable?
The price and inventory of SQM100N02-3M5L_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQM100N02-3M5L_GE3 is usually 5 days.
3.What payment methods are accepted for SQM100N02-3M5L_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQM100N02-3M5L_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQM100N02-3M5L_GE3?
SQM100N02-3M5L_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQM100N02-3M5L_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQM100N02-3M5L_GE3?
For technical support, including SQM100N02-3M5L_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQM100N02-3M5L_GE3 requirements.
6.How does Aetrix verify that SQM100N02-3M5L_GE3 is sourced from the original manufacturer or authorized distributors?
All SQM100N02-3M5L_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQM100N02-3M5L_GE3 meets industry standards.
7.What is the process for return or replacement of SQM100N02-3M5L_GE3?
All SQM100N02-3M5L_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQM100N02-3M5L_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQM100N02-3M5L_GE3 part is unused and in its original packaging.
Return procedure for SQM100N02-3M5L_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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