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Vishay Siliconix SQM100N04-2M7_GE3
- Part No.:
- SQM100N04-2M7_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SQM100N04-2M7_GE3.pdf
- Description:
- MOSFET N-CH 40V 100A TO263
- Quantity:
- Payment:
- Shipping:
Inventory:6,866
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Product details
Overview
SQM100N04-2M7 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 40 V drain-source voltage, 100 A continuous drain current at 25 °C, and 2.7 mΩ RDS(on) at VGS = 10 V. It operates up to +175 °C junction temperature and is used in high-current DC-DC converters, motor control inverters, and battery disconnect switches in EV/HEV powertrain systems.
For engineers reviewing the SQM100N04-2M7 datasheet, SQM100N04-2M7 pinout, SQM100N04-2M7 application, or SQM100N04-2M7 equivalent, key selection criteria include its AEC-Q101 qualification, low RDS(on) at elevated temperature, 100 % Rg and UIS tested reliability, and TO-263 (D2PAK) thermal performance with RthJC = 0.95 °C/W.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in high-power automotive applications. Its gate charge profile (Qg = 95.5–145 nC, Qgd = 14.7 nC) supports efficient PWM operation in 48 V and 400 V battery-fed systems, while the integrated body diode (VSD = 0.8–1.5 V at 30 A) enables synchronous rectification and freewheeling in half-bridge topologies.
The device features a single N-channel configuration in a surface-mount TO-263 package with exposed drain tab for direct heatsinking. Absolute maximum ratings include 400 A pulsed drain current and 245 mJ single-pulse avalanche energy - confirming robustness under transient overloads common in automotive load-dump and inductive switching events.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage compatible with 48 V nominal battery systems and transient clamping up to ISO 7637-2 Pulse 5a. |
| RDS(on) @ VGS = 10 V | 2.7 mΩ - Enables ≤ 27 W conduction loss at 100 A, critical for thermal management in compact power modules. |
| ID (continuous, TC = 25 °C) | 100 A - Supports high-current motor phase legs and bidirectional DC-DC stages without parallel devices. |
| Junction Temp Range | −55 to +175 °C - Meets under-hood automotive ambient requirements per AEC-Q101 stress testing. |
| RthJC | 0.95 °C/W - Allows direct PCB copper pour or heatsink mounting to maintain TJ < 150 °C at full load. |
| EAS | 245 mJ - Withstands repetitive inductive turn-off energy in solenoid drivers and traction inverter shoot-through protection. |
| Qg | 95.5–145 nC - Balances switching speed and gate drive power; enables <21 ns turn-on delay with 1 Ω driver. |
Pinout & Package
Package: TO-263 (D2PAK), surface-mount, 3-lead, with exposed drain tab (pin 2) for thermal and electrical connection to PCB heatsink plane.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control input | Receives 10 V logic-level signal to fully enhance channel; threshold VGS(th) = 2.5–3.5 V ensures reliable turn-on with standard microcontroller GPIO. |
| D (Drain) | High-side power output | Exposed metal tab electrically connected to drain; must be soldered to large copper area or heatsink for thermal dissipation and low-inductance return path. |
| S (Source) | Power return / reference | Provides low-impedance source node for current sensing and gate drive reference; ties directly to power ground plane in half-bridge configurations. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive power electronics including engine control units, battery management systems, and ADAS actuators. |
| 100 % Rg and UIS tested | Each unit undergoes gate resistance screening and unclamped inductive switching stress to guarantee ruggedness in real-world fault conditions. |
| TrenchFET® architecture | Delivers lower RDS(on) × Qg figure-of-merit than planar MOSFETs, reducing total switching + conduction losses in high-frequency converters. |
| Low RthJC (0.95 °C/W) | Enables >150 W continuous power dissipation with minimal heatsink volume, supporting compact inverter designs. |
| 175 °C max junction temperature | Permits operation in high-ambient zones (e.g., near powertrain components) without derating below 100 A at TC = 125 °C. |
Applications
| Electric Power Steering (EPS) | 48 V Mild Hybrid DC-DC Converter |
|---|---|
Use Scenario: High-efficiency H-bridge driver for brushless EPS motor with peak currents ≥ 80 A. IC Role / Device Role / Timing Role: Low-side and high-side switching element in three-phase inverter stage, operating at 20–50 kHz PWM frequency. Use Value: 2.7 mΩ RDS(on) minimizes I²R heating during sustained assist torque, while 175 °C rating ensures reliability in sealed steering column enclosures. | Use Scenario: Primary-side synchronous rectifier in bi-directional buck-boost converter linking 12 V and 48 V domains. IC Role / Device Role / Timing Role: Main power switch in high-side position, handling continuous 60–100 A output with tight dead-time control. Use Value: Low Qgd/Qg ratio (0.15) reduces Miller-induced shoot-through risk, and 245 mJ EAS withstands reverse recovery transients during mode transitions. |
| Onboard Charger (OBC) Input Stage | EV Battery Disconnect Switch |
Use Scenario: AC-DC front-end PFC switch in 6.6 kW OBC, operating in continuous conduction mode at 65–100 kHz. IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET in boost PFC circuit, requiring low Coss and stable RDS(on) over temperature. Use Value: Coss = 744–930 pF and RDS(on) drift of only 2× from 25 °C to 175 °C ensure predictable efficiency across full vehicle operating range. | Use Scenario: High-reliability main contactor replacement in 400 V battery pack service disconnect module. IC Role / Device Role / Timing Role: Solid-state isolation switch controlling battery-to-inverter power flow, activated during crash detection or maintenance. Use Value: AEC-Q101 qualification and 400 A pulsed rating support fail-safe disconnection under short-circuit fault, while TO-263 mechanical robustness meets vibration standards. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | 40 V, 220 A, 0.75 mΩ RDS(on), TO-263, AEC-Q101, but higher Qg (190 nC) and larger die size. | Better conduction loss at ultra-high current (>150 A), but requires stronger gate driver and more layout area. | Select when system prioritizes lowest possible RDS(on) over gate drive simplicity and board space. |
| IRFS7530TRLPbF | 40 V, 120 A, 2.8 mΩ RDS(on), TO-263, not AEC-Q101 qualified; RthJC = 1.0 °C/W. | Suitable for industrial/commercial SMPS but lacks automotive qualification and has marginally higher thermal resistance. | Select for cost-sensitive non-automotive applications where AEC-Q101 is not mandated and thermal margin allows 0.05 °C/W higher RthJC. |
Compared with STL220N4F7AG and IRFS7530TRLPbF, SQM100N04-2M7 offers optimal balance of automotive qualification, 2.7 mΩ conduction loss, 95.5–145 nC gate charge, and proven 0.95 °C/W thermal resistance - making it preferred for space-constrained, thermally demanding automotive power stages where reliability and qualification are mandatory.
Availability
SQM100N04-2M7 is available at Aetrix Electronics and suitable for electric power steering, 48 V mild hybrid converters, and onboard charger designs requiring stable component supply, long-term automotive lifecycle support, and traceable sourcing.
Supply support for SQM100N04-2M7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQM100N04-2M7 belongs to Vishay's TrenchFET® Gen IV automotive power MOSFET family, engineered specifically for high-current, high-temperature switching in electrified vehicle subsystems such as battery management, motor control, and DC-DC conversion.
FAQ
What is the maximum continuous drain current rating for SQM100N04-2M7 at 125 °C case temperature?
The SQM100N04-2M7 supports 98 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This reflects realistic derating for under-hood environments and confirms suitability for sustained high-load operation in automotive traction inverters and DC-DC stages where case temperatures routinely exceed 100 °C. The SQM100N04-2M7 maintains stable RDS(on) up to 175 °C junction temperature, ensuring predictable performance across the full thermal envelope.
Is SQM100N04-2M7 qualified to AEC-Q101, and what does that mean for automotive use?
Yes, SQM100N04-2M7 is explicitly AEC-Q101 qualified, as stated in the Features section and verified in Vishay's compliance documentation. This means the device has passed accelerated stress tests for temperature cycling, humidity bias, high-temperature gate bias, and unclamped inductive switching - validating its reliability for permanent installation in automotive powertrain, chassis, and safety-critical systems. The SQM100N04-2M7 is approved for use in engine compartments, battery packs, and ADAS modules where failure modes must be rigorously controlled.
What is the typical gate charge (Qg) of SQM100N04-2M7, and how does it affect gate driver selection?
The SQM100N04-2M7 has a typical total gate charge (Qg) of 95.5 nC at VGS = 10 V, with a maximum of 145 nC. This value determines the energy required to fully switch the MOSFET and directly impacts gate driver sizing: a 1 Ω gate resistor yields ~21 ns turn-on delay and ~17 ns rise time, so drivers capable of ≥2 A peak sink/source current are recommended for 100 kHz+ operation. The SQM100N04-2M7's Qgd/Qg ratio of ~0.15 also simplifies dead-time design in bridge configurations.
Does SQM100N04-2M7 include an integrated body diode, and what are its forward voltage characteristics?
Yes, SQM100N04-2M7 includes a monolithic body diode with typical forward voltage (VSD) of 0.8 V at IF = 30 A and VGS = 0 V, rising to 1.5 V maximum. This diode supports freewheeling in inductive loads and synchronous rectification in DC-DC topologies. Its soft recovery behavior and 400 A pulsed current rating (ISM) make the SQM100N04-2M7 suitable for hard-commutated circuits like motor phase legs, where reverse recovery stress is significant.
What is the thermal resistance from junction to case (RthJC) for SQM100N04-2M7, and how should it be applied in thermal design?
The SQM100N04-2M7 has a specified RthJC of 0.95 °C/W, measured from junction to the drain tab surface. In thermal design, this value must be used with the actual thermal interface resistance (e.g., thermal pad or paste) and heatsink resistance to calculate total junction-to-ambient path. For example, with 0.2 °C/W interface + 1.5 °C/W heatsink, total RthJA ≈ 2.65 °C/W - allowing ~59 W continuous dissipation before reaching 175 °C junction limit. The SQM100N04-2M7's low RthJC enables effective thermal coupling to PCB copper pours or external heatsinks in space-constrained automotive modules.
SQM100N04-2M7_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 2.7mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 145 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 7910 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 157W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
SQM100N04-2M7_GE3 FAQ
1.How can I place an order for SQM100N04-2M7_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQM100N04-2M7_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQM100N04-2M7_GE3 reliable?
The price and inventory of SQM100N04-2M7_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQM100N04-2M7_GE3 is usually 5 days.
3.What payment methods are accepted for SQM100N04-2M7_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQM100N04-2M7_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQM100N04-2M7_GE3?
SQM100N04-2M7_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQM100N04-2M7_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQM100N04-2M7_GE3?
For technical support, including SQM100N04-2M7_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQM100N04-2M7_GE3 requirements.
6.How does Aetrix verify that SQM100N04-2M7_GE3 is sourced from the original manufacturer or authorized distributors?
All SQM100N04-2M7_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQM100N04-2M7_GE3 meets industry standards.
7.What is the process for return or replacement of SQM100N04-2M7_GE3?
All SQM100N04-2M7_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQM100N04-2M7_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQM100N04-2M7_GE3 part is unused and in its original packaging.
Return procedure for SQM100N04-2M7_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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