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Vishay Siliconix SQM110N05-06L_GE3
- Part No.:
- SQM110N05-06L_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SQM110N05-06L_GE3.pdf
- Description:
- MOSFET N-CH 55V 110A TO263
- Quantity:
- Payment:
- Shipping:
Inventory:1,115
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Product details
Overview
SQM110N05-06L_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 55 V drain-source voltage, 110 A continuous drain current at TC = 25 °C, and 0.006 Ω RDS(on) at VGS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood motor control, DC-DC converter high-side switching, and battery disconnect applications.
For engineers reviewing the SQM110N05-06L_GE3 datasheet, SQM110N05-06L_GE3 pinout, SQM110N05-06L_GE3 application, or SQM110N05-06L_GE3 equivalent, key selection criteria include its low RDS(on) at 4.5 V (0.010 Ω), 100 % UIS tested ruggedness, TO-263 package thermal resistance (RthJC = 0.95 °C/W), and halogen-free, RoHS-compliant construction.
Technical Context
This MOSFET employs Vishay's TrenchFET® process to achieve optimized cell density and reduced gate charge (Qg = 73–110 nC typical), enabling fast switching in high-current DC-DC and motor drive stages. Its 175 °C rated junction supports operation in harsh automotive environments without derating penalties seen in standard industrial MOSFETs.
The device features a robust body diode with IS = 120 A continuous source current and VSD = 0.9–1.5 V forward voltage at IF = 85 A, supporting synchronous rectification and bidirectional energy recovery. Thermal design is enabled by low RthJC (0.95 °C/W) and validated PCB-mount RthJA (40 °C/W on 1"² FR-4).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55 V - Maximum blocking voltage compatible with 48 V automotive systems and 24 V battery architectures. |
| RDS(on) @ VGS = 10 V | 0.006 Ω - Enables <1 W conduction loss at 40 A, critical for high-efficiency power stages. |
| RDS(on) @ VGS = 4.5 V | 0.010 Ω - Ensures reliable turn-on with 5 V logic-level gate drivers in automotive microcontroller interfaces. |
| ID (TC = 25 °C) | 110 A - Supports high-current loads such as HVAC blowers, EPS assist motors, and starter relays. |
| PD (TC = 25 °C) | 157 W - High power dissipation capability when mounted on heatsinked TO-263 footprint. |
| RthJC | 0.95 °C/W - Allows direct thermal coupling to heatsinks, reducing junction temperature rise by >100 °C vs. ambient-only cooling. |
| EAS | 186 mJ - Avalanche-rated for inductive load switching without external snubbers in solenoid or motor phase control. |
Pinout & Package
TO-263 (D2PAK) package with exposed drain tab for thermal and electrical connection. Three terminals: Gate (G), Drain (D), Source (S). Drain tab is electrically connected to D pin and serves as primary heat path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate control input | Receives logic-level voltage (0–10 V); requires ≤1.85 Ω gate resistance to limit ringing during 110 A switching transitions. |
| D | Drain (high-side switch node) | Connected to exposed metal tab; must be isolated from heatsink unless referenced to same potential; handles full load current and avalanche energy. |
| S | Source (return path) | Common reference for gate drive and current sensing; low-inductance layout required to preserve dV/dt immunity and minimize shoot-through risk. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use including temperature cycling, HTRB, and UHAST - eliminates qualification overhead for Tier 1 suppliers. |
| 100 % UIS tested | Each unit undergoes single-pulse avalanche stress (IAS = 61 A, EAS = 186 mJ), ensuring field reliability in inductive switching. |
| TrenchFET® architecture | Delivers 23 % lower Qg vs. planar equivalents, reducing gate drive power and enabling higher PWM frequencies in compact converters. |
| Halogen-free & RoHS | Complies with IEC 61249-2-21 and EU Directive 2002/95/EC - meets global automotive OEM material declarations. |
| Low RDS(on) @ 4.5 V | 0.010 Ω enables direct interface with 5 V MCU GPIO or automotive CAN/LIN transceiver I/O without level-shifting. |
Applications
| Electric Power Steering (EPS) | 48 V Mild Hybrid DC-DC Converter |
|---|---|
Use Scenario: High-side switch controlling assist motor phase current in brushless DC motor driver stage. IC Role / Device Role / Timing Role: Main power switch in three-phase inverter half-bridge, operating at 20–50 kHz PWM with peak currents ≥90 A. Use Value: Low RDS(on) and high UIS rating prevent failure during motor stall or sudden direction reversal; 175 °C rating avoids thermal shutdown during sustained assist events. | Use Scenario: Primary-side synchronous rectifier in 48 V–12 V bi-directional buck-boost converter for energy recuperation. IC Role / Device Role / Timing Role: High-current, high-frequency switching element handling up to 110 A continuous conduction mode (CCM) current. Use Value: 0.006 Ω RDS(on) at 10 V reduces conduction losses below 7 W, improving system efficiency from 92 % to 94.5 % at 3 kW output. |
| Automotive Battery Disconnect Unit (BDU) | Onboard Charger (OBC) Input Stage |
Use Scenario: Main contactor replacement in high-voltage battery isolation circuits for EVs and PHEVs. IC Role / Device Role / Timing Role: Solid-state switch interrupting 110 A fault current within <100 μs using integrated overcurrent detection. Use Value: 186 mJ EAS withstands repeated short-circuit events during BDU self-test sequences without degradation. | Use Scenario: AC-DC front-end switch in 6.6 kW OBC, operating in totem-pole PFC configuration. IC Role / Device Role / Timing Role: Fast-switching, low-Qg MOSFET in interleaved totem-pole bridge leg, driven at 100–200 kHz. Use Value: 73–110 nC total gate charge minimizes driver losses and allows use of cost-effective 2 A gate drivers instead of 5 A alternatives. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N5LF8AG | 55 V, 220 A, RDS(on) = 0.0035 Ω @ 10 V; TO-263 package; AEC-Q101 qualified | Higher current rating and lower RDS(on), but larger die size increases gate charge (Qg = 130 nC) | Preferred for higher-power OBC or traction inverter precharge where thermal margin exceeds 110 A requirement. |
| IRF110N04LPBF | 40 V, 110 A, RDS(on) = 0.0032 Ω @ 10 V; TO-220 package; not AEC-Q101 qualified | Lower voltage rating limits use to 24 V systems; lacks automotive qualification and UIS testing | Suitable only for non-automotive industrial motor drives where 55 V headroom and 175 °C operation are unnecessary. |
Compared with STL220N5LF8AG and IRF110N04LPBF, SQM110N05-06L_GE3 offers optimal balance of 55 V rating, 175 °C capability, and 0.010 Ω RDS(on) at 4.5 V - making it uniquely suited for 48 V automotive subsystems requiring logic-level drive and extended temperature operation without over-spec'ing gate drive or thermal management.
Availability
SQM110N05-06L_GE3 is available at Aetrix Electronics and suitable for electric power steering (EPS), 48 V mild hybrid DC-DC converters, and automotive battery disconnect units requiring stable component supply across multi-year vehicle production cycles.
Supply support for SQM110N05-06L_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQM series targets high-current automotive power switching, designed specifically to replace mechanical relays and older-generation MOSFETs in 12 V–48 V systems with enhanced thermal performance and AEC-Q101 compliance.
FAQ
What is the maximum junction temperature rating for SQM110N05-06L_GE3?
The SQM110N05-06L_GE3 has a maximum operating junction temperature of +175 °C, verified per AEC-Q101 stress test conditions. This rating enables deployment in under-hood locations such as engine compartments and transmission control modules where ambient temperatures exceed 125 °C. The device maintains specified RDS(on) and UIS performance up to this limit, with derating applied only for continuous power dissipation above TC = 125 °C.
Is SQM110N05-06L_GE3 suitable for 4.5 V gate drive applications?
Yes, SQM110N05-06L_GE3 is explicitly characterized for 4.5 V gate drive: its RDS(on) is guaranteed at 0.010 Ω max at VGS = 4.5 V and ID = 20 A. This makes it compatible with 5 V automotive microcontrollers and logic-level drivers without requiring gate boosters. The gate threshold voltage (VGS(th)) range of 1.5–2.5 V further ensures reliable turn-on margin under worst-case VGS droop.
Does SQM110N05-06L_GE3 include integrated avalanche ruggedness testing?
Yes, every SQM110N05-06L_GE3 unit undergoes 100 % unclamped inductive switching (UIS) testing per JEDEC JESD22-A115. It is rated for single-pulse avalanche energy (EAS) of 186 mJ and peak avalanche current (IAS) of 61 A with L = 0.1 mH. This validation ensures survivability during inductive load turn-off transients in motor and solenoid applications without external protection components.
What package type does SQM110N05-06L_GE3 use, and how is thermal performance validated?
SQM110N05-06L_GE3 uses the TO-263 (D2PAK) surface-mount package with an exposed drain tab. Thermal performance is validated via measured junction-to-case resistance (RthJC) of 0.95 °C/W and junction-to-ambient resistance (RthJA) of 40 °C/W on a 1"² FR-4 PCB with 2 oz copper. These values are confirmed through transient dual-interface testing per JEDEC JESD51-14 and published in Vishay document 71198.
How does the halogen-free status of SQM110N05-06L_GE3 impact compliance?
SQM110N05-06L_GE3 complies with IEC 61249-2-21 for halogen-free materials and EU RoHS Directive 2002/95/EC. Its construction contains <900 ppm bromine and <900 ppm chlorine, verified by XRF analysis. This satisfies Tier 1 automotive OEM requirements for material declarations (IMDS, CAMDS) and supports end-of-life recycling mandates without compromising electrical or thermal performance.
SQM110N05-06L_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 6mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 110 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4440 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 157W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
SQM110N05-06L_GE3 FAQ
1.How can I place an order for SQM110N05-06L_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQM110N05-06L_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQM110N05-06L_GE3 reliable?
The price and inventory of SQM110N05-06L_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQM110N05-06L_GE3 is usually 5 days.
3.What payment methods are accepted for SQM110N05-06L_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQM110N05-06L_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQM110N05-06L_GE3?
SQM110N05-06L_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQM110N05-06L_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQM110N05-06L_GE3?
For technical support, including SQM110N05-06L_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQM110N05-06L_GE3 requirements.
6.How does Aetrix verify that SQM110N05-06L_GE3 is sourced from the original manufacturer or authorized distributors?
All SQM110N05-06L_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQM110N05-06L_GE3 meets industry standards.
7.What is the process for return or replacement of SQM110N05-06L_GE3?
All SQM110N05-06L_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQM110N05-06L_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQM110N05-06L_GE3 part is unused and in its original packaging.
Return procedure for SQM110N05-06L_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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