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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQM110P04-04L-GE3

Name: SQM110P04-04L-GE3
Brand: Vishay Siliconix
SKU: SQM110P04-04L-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQM110P04-04L-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SQM110P04-04L-GE3.pdf

Description:: MOSFET P-CH 40V 120A TO263

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Product details

Overview

SQM110P04-04L-GE3 from Vishay Siliconix is an automotive-grade P-channel TrenchFET® MOSFET with -40 V V_DS, 0.0040 Ω R_DS(on) at -10 V V_GS, and -120 A continuous drain current at T_C = 25 °C, housed in a TO-263 (D²PAK) package. It serves as a high-current, high-temperature load switch in 12 V/24 V automotive power distribution systems.

For engineers reviewing the SQM110P04-04L-GE3 datasheet, SQM110P04-04L-GE3 pinout, SQM110P04-04L-GE3 application, or SQM110P04-04L-GE3 equivalent, key selection criteria include its AEC-Q101 qualification, 175 °C maximum junction temperature, low R_DS(on) at -4.5 V gate drive, and robust UIS and avalanche energy rating (320 mJ).

Technical Context

This device uses trench-gate silicon technology to achieve low on-resistance and fast switching with controlled Q_g (220–330 nC) and low C_iss (11,183–13,980 pF). Its P-channel configuration enables high-side switching without level-shifting circuitry in DC-DC converters and battery disconnect circuits.

The MOSFET features integrated body diode with V_SD = -0.95 V at -100 A and is fully characterized for operation up to 175 °C junction temperature, supporting under-hood applications where thermal management is critical and PCB-mount thermal resistance (R_thJA) is 40 °C/W on 1" FR-4.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-40 V - Supports 24 V automotive systems with margin against load dump transients
R_DS(on) @ -10 V	0.0040 Ω - Enables <1 W conduction loss at 120 A, reducing heatsink requirements
R_DS(on) @ -4.5 V	0.0060 Ω - Ensures reliable turn-on with standard 5 V logic-level gate drivers
I_D Continuous	-120 A @ T_C = 25 °C - Rated for high-power load switching in engine control modules
E_AS	320 mJ - Withstands repetitive inductive switching events in solenoid and motor control
R_thJC	0.40 °C/W - Enables direct heatsink mounting for efficient thermal transfer in compact layouts
T_J Range	-55 to +175 °C - Certified for under-hood placement per AEC-Q101 stress testing

Pinout & Package

Package: TO-263 (D²PAK), surface-mount, single-ended drain tab, thermally enhanced plastic case with exposed copper drain pad.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heat sink interface	Exposed metal tab electrically connected to drain; must be soldered to large copper pour for thermal and electrical performance
Source	Reference node for gate drive and current return	Common source connection for P-channel operation; ties to system ground or battery negative in high-side switch
Gate	Control input for channel conduction	High-impedance terminal requiring <3.7 Ω gate resistance to limit ringing; driven negative relative to source to turn on

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive use including temperature cycling, HTRB, and UHAST - required for ECU and body control module deployment
100 % R_g and UIS tested	Each unit screened for gate resistance consistency and unclamped inductive switching robustness - ensures field reliability in noisy environments
TrenchFET® architecture	Delivers lower R_DS(on) per die area than planar MOSFETs - enables smaller footprint for same current rating
Halogen-free & RoHS compliant	Meets IEC 61249-2-21 and EU Directive 2002/95/EC - supports green manufacturing and end-of-life compliance

Applications

Engine Start-Stop Control	Automotive Battery Disconnect
Use Scenario: Managing battery connection during automatic engine restart to prevent voltage sag and protect sensitive electronics. IC Role / Device Role / Timing Role: High-side P-channel MOSFET acting as main battery isolation switch, controlled by microcontroller GPIO with gate driver. Use Value: Low 0.0060 Ω R_DS(on) at -4.5 V enables direct MCU-compatible control while limiting voltage drop to <0.6 V at 100 A.	Use Scenario: Isolating auxiliary battery banks in dual-battery commercial vehicles to prevent parasitic drain and enable jump-start capability. IC Role / Device Role / Timing Role: Load switch in battery management system, activated only during ignition or charging cycles. Use Value: 175 °C rated junction temperature allows mounting near battery terminals without derating in hot chassis environments.
12 V DC-DC Converter High-Side Switch	Electric Power Steering (EPS) Motor Phase Protection
Use Scenario: High-side synchronous rectification in buck converter supplying 5 V/3.3 V rails to ADAS sensors and infotainment ECUs. IC Role / Device Role / Timing Role: P-channel switch replacing bootstrap circuitry in non-isolated step-down topology. Use Value: Fast 17 ns turn-on delay and 15 ns rise time support >500 kHz switching frequencies while maintaining efficiency.	Use Scenario: Overcurrent protection for EPS motor phase legs during fault conditions such as short-to-ground or lock-rotor. IC Role / Device Role / Timing Role: Current-limiting switch placed between motor driver IC and motor winding. Use Value: 320 mJ single-pulse avalanche energy rating absorbs inductive kickback without failure during emergency shutdown.

Engine Start-Stop Control

Automotive Battery Disconnect

Use Scenario: Managing battery connection during automatic engine restart to prevent voltage sag and protect sensitive electronics.

IC Role / Device Role / Timing Role: High-side P-channel MOSFET acting as main battery isolation switch, controlled by microcontroller GPIO with gate driver.

Use Value: Low 0.0060 Ω R_DS(on) at -4.5 V enables direct MCU-compatible control while limiting voltage drop to <0.6 V at 100 A.

Use Scenario: Isolating auxiliary battery banks in dual-battery commercial vehicles to prevent parasitic drain and enable jump-start capability.

IC Role / Device Role / Timing Role: Load switch in battery management system, activated only during ignition or charging cycles.

Use Value: 175 °C rated junction temperature allows mounting near battery terminals without derating in hot chassis environments.

12 V DC-DC Converter High-Side Switch

Electric Power Steering (EPS) Motor Phase Protection

Use Scenario: High-side synchronous rectification in buck converter supplying 5 V/3.3 V rails to ADAS sensors and infotainment ECUs.

IC Role / Device Role / Timing Role: P-channel switch replacing bootstrap circuitry in non-isolated step-down topology.

Use Value: Fast 17 ns turn-on delay and 15 ns rise time support >500 kHz switching frequencies while maintaining efficiency.

Use Scenario: Overcurrent protection for EPS motor phase legs during fault conditions such as short-to-ground or lock-rotor.

IC Role / Device Role / Timing Role: Current-limiting switch placed between motor driver IC and motor winding.

Use Value: 320 mJ single-pulse avalanche energy rating absorbs inductive kickback without failure during emergency shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF4905PbF	R_DS(on) = 0.02 Ω @ -10 V; lower current rating (-74 A); TO-220 package	Limited to lower-power loads; lacks AEC-Q101 qualification and 175 °C rating	Use only in non-automotive, ambient-temperature industrial controls where cost is primary constraint
STP110P4LLH6	R_DS(on) = 0.0055 Ω @ -10 V; same TO-263 package; AEC-Q101 qualified but max T_J = 175 °C not validated per full stress test report	Similar thermal and electrical specs but less documented automotive validation history	Consider when Vishay supply constraints exist; verify latest ST qualification status before design-in

Compared with IRF4905PbF and STP110P4LLH6, SQM110P04-04L-GE3 delivers superior conduction efficiency (-120 A, 0.0040 Ω), full AEC-Q101 compliance, and verified 175 °C operation - making it the preferred choice for safety-critical, high-temperature automotive power switching.

Availability

SQM110P04-04L-GE3 is available at Aetrix Electronics and suitable for automotive engine control units, battery management systems, and electric power steering modules requiring stable component supply across multi-year production cycles.

Supply support for SQM110P04-04L-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQM110P04-04L-GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-current, high-temperature power switching in next-generation vehicle electrification systems.

FAQ

What is the maximum junction temperature rating for SQM110P04-04L-GE3?

The SQM110P04-04L-GE3 is rated for a maximum junction temperature of +175 °C, validated per AEC-Q101 stress testing. This rating is confirmed in the Absolute Maximum Ratings table and supported by thermal characterization data showing R_DS(on) stability up to 175 °C. The device maintains functional integrity and specified R_DS(on) performance within this range, enabling deployment in under-hood locations where ambient temperatures exceed 125 °C.

Is SQM110P04-04L-GE3 suitable for 48 V mild-hybrid automotive systems?

No - SQM110P04-04L-GE3 has a -40 V V_DS rating, which provides insufficient margin for 48 V system transients (e.g., ISO 16750-2 load dump peaks up to 65 V). It is designed for 12 V and 24 V architectures only. For 48 V applications, engineers should select devices with ≥80 V V_DS ratings, such as Vishay's SQMxxN08 series. SQM110P04-04L-GE3 remains optimal for traditional and start-stop 12/24 V power distribution.

Does SQM110P04-04L-GE3 require a gate driver IC?

SQM110P04-04L-GE3 can be driven directly by microcontrollers with 5 V-tolerant outputs, since its V_GS(th) is -1.5 to -2.5 V and R_DS(on) is fully specified at -4.5 V. However, for high-frequency switching (>100 kHz) or high-current transient control, a dedicated gate driver (e.g., TC4427) is recommended to minimize switching losses and ensure clean turn-on/turn-off. The SQM110P04-04L-GE3's 220–330 nC total gate charge makes driver selection critical for efficiency.

What is the meaning of "-GE3" in SQM110P04-04L-GE3?

The "-GE3" suffix denotes Vishay's lead (Pb)-free and halogen-free packaging per JEDEC J-STD-609A Class 3 and IEC 61249-2-21. It indicates the device uses matte tin plating on leads and halogen-free molding compound. This suffix differentiates it from legacy versions (e.g., -GE2) and confirms compliance with RoHS Directive 2002/95/EC and automotive environmental standards. SQM110P04-04L-GE3 is the current production version.

How is the drain tab of SQM110P04-04L-GE3 electrically isolated during PCB layout?

The drain tab of SQM110P04-04L-GE3 is electrically connected to the internal drain node and is not insulated - it must be treated as a live high-current terminal. During PCB layout, the tab is soldered directly to a large copper pour tied to the system power rail (e.g., battery negative for high-side switch). No solder mask or isolation layer is applied beneath the tab. Thermal vias to inner-layer ground or power planes are permitted, but only if those planes are at the same potential as the drain.

SQM110P04-04L-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 330 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 13980 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 375W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SQM110P04-04L-GE3 FAQ

1.How can I place an order for SQM110P04-04L-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQM110P04-04L-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQM110P04-04L-GE3 reliable?

The price and inventory of SQM110P04-04L-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQM110P04-04L-GE3 is usually 5 days.

3.What payment methods are accepted for SQM110P04-04L-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQM110P04-04L-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQM110P04-04L-GE3?

SQM110P04-04L-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQM110P04-04L-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQM110P04-04L-GE3?

For technical support, including SQM110P04-04L-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQM110P04-04L-GE3 requirements.

6.How does Aetrix verify that SQM110P04-04L-GE3 is sourced from the original manufacturer or authorized distributors?

All SQM110P04-04L-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQM110P04-04L-GE3 meets industry standards.

7.What is the process for return or replacement of SQM110P04-04L-GE3?

All SQM110P04-04L-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQM110P04-04L-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQM110P04-04L-GE3 part is unused and in its original packaging.

Return procedure for SQM110P04-04L-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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