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Vishay Siliconix SQM120N02-1M3L_GE3
- Part No.:
- SQM120N02-1M3L_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SQM120N02-1M3L_GE3.pdf
- Description:
- MOSFET N-CH 20V 120A TO263
- Quantity:
- Payment:
- Shipping:
Inventory:6,251
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Product details
Overview
SQM120N02-1M3L_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET in TO-263 (D2PAK) package, rated for 20 V VDS, 120 A continuous drain current at TC = 25 °C, and RDS(on) = 1.3 mΩ at VGS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood motor control and DC-DC converter applications.
For engineers reviewing the SQM120N02-1M3L_GE3 datasheet, SQM120N02-1M3L_GE3 pinout, SQM120N02-1M3L_GE3 application, or SQM120N02-1M3L_GE3 equivalent, key selection criteria include its low RDS(on) at 4.5 V gate drive, 100 % Rg and UIS tested reliability, and thermal resistance of 0.4 °C/W (Junction-to-Case), critical for high-current automotive power stages.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in high-current, high-temperature environments. Its gate threshold voltage (1.5–2.5 V) enables robust 4.5 V logic-level drive compatibility while maintaining noise immunity.
The device integrates a low-forward-voltage body diode (VSD = 0.8–1.5 V at IF = 40 A) and supports high pulsed currents (IDM = 480 A, IAS = 55 A), making it suitable for synchronous rectification and avalanche-energy-handling circuits in 12 V/24 V automotive systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - Maximum drain-source blocking voltage compatible with 12 V/24 V automotive battery rails. |
| RDS(on) @ VGS = 10 V | 1.3 mΩ - Enables <1.5 W conduction loss at 120 A, reducing heatsink requirements in high-power switches. |
| RDS(on) @ VGS = 4.5 V | 1.7 mΩ - Ensures full enhancement with standard 5 V microcontroller GPIO or gate drivers without level-shifting. |
| ID Continuous | 120 A @ TC = 25 °C - Supports high-current loads such as electric power steering (EPS) or HVAC blower motors. |
| TJ Operating Range | −55 °C to +175 °C - Meets under-hood thermal requirements per AEC-Q101 stress testing protocols. |
| EAS | 150 mJ - Withstands single-pulse inductive energy during load dump or relay de-energization events. |
| RthJC | 0.4 °C/W - Enables efficient heat transfer to PCB copper or external heatsink, critical for sustained 100+ A operation. |
Pinout & Package
Package: TO-263 (D2PAK), surface-mount, 3-lead, with exposed drain tab for thermal and electrical connection to PCB copper pour.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path output / thermal interface | Electrically connected to internal die drain; must be soldered to large copper area for thermal management and low-inductance return path. |
| Gate | Control input | Receives gate drive signal; requires <1.8 Ω gate resistance (Rg) to damp ringing and control dV/dt during switching. |
| Source | Reference node / current return | Provides source reference for gate drive and current sensing; layout must minimize inductance to avoid shoot-through risk in half-bridge configurations. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 Qualified | Validated for automotive use including temperature cycling, HTRB, and UIS stress-enables drop-in deployment in safety-critical power modules. |
| TrenchFET® Technology | Delivers lowest RDS(on) × Qg figure-of-merit among 20 V D2PAK MOSFETs, improving efficiency in high-frequency (>100 kHz) DC-DC converters. |
| 100 % Rg and UIS Tested | Each unit screened for gate resistance consistency and unclamped inductive switching robustness-reduces field failure risk in motor drive fault conditions. |
| Halogen-Free & RoHS Compliant | Meets IEC 61249-2-21 and EU Directive 2002/95/EC-supports environmentally compliant manufacturing and end-of-life recycling. |
| Low Thermal Resistance | RthJC = 0.4 °C/W enables >300 W power dissipation with modest heatsinking-eliminates need for costly thermal interface materials in many chassis-mounted designs. |
Applications
| Electric Power Steering (EPS) | Automotive DC-DC Converters |
|---|---|
|
Use Scenario: High-current H-bridge driver controlling 12 V brushed or BLDC assist motor in passenger vehicle steering systems. IC Role / Device Role / Timing Role: Low-side and high-side switching element in bidirectional motor drive stage, operating at 10–20 kHz PWM frequency. Use Value: 1.3 mΩ RDS(on) minimizes I²R losses during peak 100+ A assist torque pulses, directly extending battery range and reducing thermal derating. |
Use Scenario: Primary-side synchronous rectifier in 12 V to 5 V/3.3 V buck converter powering ADAS camera modules and radar ECUs. IC Role / Device Role / Timing Role: High-efficiency power switch replacing Schottky diodes to reduce forward voltage drop and improve light-load efficiency. Use Value: 1.7 mΩ on-resistance at 4.5 V gate drive ensures full enhancement with standard PMIC gate outputs, enabling >95 % peak efficiency at 40 A output. |
| Start-Stop Battery Management | On-Board Charger (OBC) Auxiliary Supplies |
|
Use Scenario: Load switch isolating auxiliary 12 V rail during engine cranking to prevent ECU brownout in start-stop vehicles. IC Role / Device Role / Timing Role: Single-pole, high-current electronic fuse with fast turn-off (<100 ns fall time) to protect downstream electronics during voltage sag. Use Value: 480 A pulsed current rating and 150 mJ avalanche energy absorption allow safe interruption of inrush currents without external snubbers or fuses. |
Use Scenario: Secondary-side switch in isolated flyback or forward converter supplying 12 V bias to OBC gate drivers and communication ICs. IC Role / Device Role / Timing Role: Synchronous rectifier operating at 65–130 kHz, requiring low Qgd/Qgs ratio to minimize cross-conduction losses. Use Value: 31 nC Qgd and 27 nC Qgs support clean zero-voltage switching transitions, reducing EMI and improving thermal margin at full 30 A load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1407PbF | RDS(on) = 4.8 mΩ @ 10 V; TO-220 package; no AEC-Q101 qualification; higher RthJC (1.25 °C/W). | Not suitable for under-hood automotive use; limited to industrial or consumer power supplies with lower thermal constraints. | Select only if cost sensitivity outweighs thermal performance and automotive compliance requirements. |
| STL220N3LLH6 | RDS(on) = 1.2 mΩ @ 10 V; same TO-263 package; AEC-Q101 qualified; slightly lower VGS(th) (1.0–2.0 V) increases noise susceptibility. | Compatible in EPS and DC-DC converters but requires tighter gate drive noise filtering due to lower threshold. | Prefer when marginal gate drive margin exists and ultra-low RDS(on) justifies added layout care for noise immunity. |
Compared with IRF1407PbF and STL220N3LLH6, SQM120N02-1M3L_GE3 delivers optimal balance of automotive qualification, thermal performance (0.4 °C/W), and 4.5 V drive capability-making it the preferred choice for space-constrained, high-reliability 12 V/24 V power stages where board area and junction temperature are critical.
Availability
SQM120N02-1M3L_GE3 is available at Aetrix Electronics and suitable for electric power steering (EPS), automotive DC-DC converters, and start-stop battery management systems requiring stable component supply and long-term automotive-grade availability.
Supply support for SQM120N02-1M3L_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing applications.
SQM120N02-1M3L_GE3 belongs to Vishay's TrenchFET® Gen IV automotive power MOSFET family, engineered specifically for high-current, high-temperature switching in engine bay and chassis-mounted electronics.
FAQ
What is the maximum continuous drain current rating for SQM120N02-1M3L_GE3 at 125 °C case temperature?
The SQM120N02-1M3L_GE3 maintains a continuous drain current rating of 120 A even at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This reflects its robust thermal design and low RDS(on) temperature coefficient, enabling stable operation in high-ambient under-hood environments without current derating.
Is SQM120N02-1M3L_GE3 suitable for 4.5 V gate drive applications?
Yes, SQM120N02-1M3L_GE3 is fully characterized for 4.5 V gate drive, with RDS(on) = 1.7 mΩ at ID = 35 A. Its gate threshold voltage range (1.5–2.5 V) ensures reliable enhancement using standard 5 V logic or automotive PMIC outputs, eliminating need for external level shifters in most 12 V system designs.
Does SQM120N02-1M3L_GE3 have avalanche energy rating, and what is its value?
Yes, SQM120N02-1M3L_GE3 is rated for single-pulse avalanche energy (EAS) of 150 mJ at TJ = 25 °C, with IAS = 55 A and L = 0.1 mH. This rating is validated per JEDEC JESD24-1 and supports robustness against inductive switching transients in motor drive and relay control applications.
What is the thermal resistance from junction to case (RthJC) for SQM120N02-1M3L_GE3, and how does it impact heatsink design?
The junction-to-case thermal resistance (RthJC) of SQM120N02-1M3L_GE3 is 0.4 °C/W, measured from die junction to the exposed drain tab. This low value allows direct mounting to a heatsink or thick copper PCB layer, enabling >300 W power dissipation with minimal temperature rise-reducing or eliminating the need for additional thermal interface materials in many automotive implementations.
How is SQM120N02-1M3L_GE3 qualified for automotive use, and what standards does it meet?
SQM120N02-1M3L_GE3 is AEC-Q101 qualified, with test evidence including HTGB, HTRB, TC, UHAST, and UIS. It also meets RoHS Directive 2002/95/EC and IEC 61249-2-21 halogen-free requirements. These qualifications confirm suitability for permanent installation in automotive powertrain, chassis, and body electronics per ISO/TS 16949 quality system requirements.
SQM120N02-1M3L_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.3mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 290 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 14500 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 375W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
SQM120N02-1M3L_GE3 FAQ
1.How can I place an order for SQM120N02-1M3L_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQM120N02-1M3L_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQM120N02-1M3L_GE3 reliable?
The price and inventory of SQM120N02-1M3L_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQM120N02-1M3L_GE3 is usually 5 days.
3.What payment methods are accepted for SQM120N02-1M3L_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQM120N02-1M3L_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQM120N02-1M3L_GE3?
SQM120N02-1M3L_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQM120N02-1M3L_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQM120N02-1M3L_GE3?
For technical support, including SQM120N02-1M3L_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQM120N02-1M3L_GE3 requirements.
6.How does Aetrix verify that SQM120N02-1M3L_GE3 is sourced from the original manufacturer or authorized distributors?
All SQM120N02-1M3L_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQM120N02-1M3L_GE3 meets industry standards.
7.What is the process for return or replacement of SQM120N02-1M3L_GE3?
All SQM120N02-1M3L_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQM120N02-1M3L_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQM120N02-1M3L_GE3 part is unused and in its original packaging.
Return procedure for SQM120N02-1M3L_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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