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Vishay Siliconix SQM120N03-1M5L_GE3
- Part No.:
- SQM120N03-1M5L_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SQM120N03-1M5L_GE3.pdf
- Description:
- MOSFET N-CH 30V 120A TO263
- Quantity:
- Payment:
- Shipping:
Inventory:4,546
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Product details
Overview
SQM120N03-1M5L from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 30 V drain-source voltage, 120 A continuous drain current at TC = 25 °C, and 175 °C maximum junction temperature - designed for high-current DC-DC converters, motor control inverters, and battery disconnect switches in under-hood automotive systems.
For engineers reviewing the SQM120N03-1M5L datasheet, SQM120N03-1M5L pinout, SQM120N03-1M5L application, or SQM120N03-1M5L equivalent, key selection criteria include its 1.5 mΩ RDS(on) at VGS = 10 V, AEC-Q101 qualification, TO-263 (D2PAK) package with 0.4 °C/W junction-to-case thermal resistance, and 100 % UIS testing for ruggedness in inductive switching.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in high-power automotive applications. Its gate threshold voltage (1.5–2.5 V) enables robust drive compatibility with 3.3 V and 5 V logic controllers, while its 179 nC total gate charge supports efficient gate driver sizing for PWM frequencies up to 100 kHz.
The device integrates a low-forward-voltage body diode (VSD = 0.81 V typical at IF = 60 A), enabling bidirectional current handling in synchronous rectification and regenerative braking circuits. Thermal design is supported by a 0.4 °C/W RthJC rating and validated 375 W maximum power dissipation at TC = 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage compatible with 12 V/24 V automotive battery rails and transient surge protection. |
| RDS(on) | 1.5 mΩ at VGS = 10 V, ID = 30 A - Enables <1.4 W conduction loss at 120 A, critical for thermal management in compact power modules. |
| ID (continuous) | 120 A at TC = 25 °C - Supports high-current loads such as electric power steering (EPS) and HVAC blower motors without derating at board-level heatsinking. |
| TJ max | +175 °C - Meets under-hood ambient requirements per AEC-Q101, allowing operation near engine blocks and exhaust manifolds. |
| EAS | 336 mJ - Confirmed single-pulse avalanche energy rating ensures reliability during load dump or inductive flyback events. |
| RthJC | 0.4 °C/W - Enables direct thermal coupling to heatsinks or PCB copper planes, reducing thermal path resistance by >75 % vs. standard SO-8 packages. |
| Qg | 179 nC typical - Determines gate driver current requirement (~1.8 A peak for 100 ns turn-on) and switching loss trade-off at 20–100 kHz. |
Pinout & Package
Package: TO-263 (D2PAK), surface-mount, 3-lead, with exposed drain tab for thermal and electrical connection. Dimensions per Vishay Doc #71198 (Version 1): D = 8.64–9.65 mm, E = 9.65–10.41 mm, L = 14.61–15.88 mm, tab thickness c = 0.58–0.71 mm (thick lead variant).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | Control terminal; requires ≤±20 V drive; 1.19 Ω typical gate resistance limits ringing and simplifies snubber design. |
| Pin 2 (S) | Source | Power return node; referenced to controller ground; carries full load current and must be routed with low-inductance layout. |
| Pin 3 (D) | Drain | High-side power input/output node; electrically and thermally connected to exposed metal tab; requires soldered thermal pad to PCB copper pour. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use including temperature cycling, HTRB, and UHAST - eliminates need for additional qualification testing in Tier-1 designs. |
| 100 % UIS tested | Each unit undergoes unclamped inductive switching stress to 336 mJ, ensuring consistent avalanche ruggedness without screening fallout. |
| TrenchFET® architecture | Delivers 20 % lower RDS(on) and 15 % faster switching vs. planar MOSFETs at same die size - improves system efficiency in 48 V mild-hybrid converters. |
| Halogen-free & RoHS compliant | Meets IEC 61249-2-21 and EU Directive 2002/95/EC - supports global vehicle homologation and end-of-life recycling requirements. |
| Low RthJA (40 °C/W) | Enables 120 A operation on 1" × 1" FR-4 PCB with 2 oz copper - reduces need for external heatsinks in space-constrained ECUs. |
Applications
| Electric Power Steering (EPS) | 48 V Mild-Hybrid DC-DC Converter |
|---|---|
Use Scenario: High-efficiency bidirectional buck-boost conversion between 12 V starter battery and 48 V Li-ion auxiliary battery. IC Role / Device Role / Timing Role: Primary high-side synchronous rectifier switch in interleaved phase-leg topology. Use Value: 1.5 mΩ RDS(on) minimizes conduction loss at 100+ A peak current; 175 °C rating sustains operation during sustained acceleration pulses. | Use Scenario: Motor driver half-bridge for EPS column-assist actuator requiring precise torque control and fault-tolerant shutdown. IC Role / Device Role / Timing Role: Low-side switching element in three-phase inverter stage, driven by isolated gate driver. Use Value: 120 A continuous rating handles 3× stall current; 336 mJ EAS withstands back-EMF spikes during emergency stop commands. |
| On-Board Charger (OBC) Input Stage | Commercial Vehicle Battery Disconnect Switch |
Use Scenario: AC-DC front-end PFC boost switch in 6.6 kW OBC for EVs, operating at 65–100 kHz switching frequency. IC Role / Device Role / Timing Role: Fast-switching, low-Qg high-side switch in continuous conduction mode (CCM) boost converter. Use Value: 179 nC Qg enables efficient gate drive with <2 W driver loss; 12 484 pF Ciss ensures stable loop response with standard gate resistors. | Use Scenario: Solid-state main battery disconnect for Class 8 trucks, replacing mechanical contactors to eliminate arcing and wear. IC Role / Device Role / Timing Role: Single-pole, high-current isolation switch controlled via CAN-based BMS command. Use Value: 480 A pulsed drain current supports cold-cranking surges; AEC-Q101 qualification ensures 15-year field reliability in vibration-prone chassis environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N3LLH6 | RDS(on) = 1.45 mΩ @ 10 V, but rated only to 150 °C TJ and not AEC-Q101 qualified. | Suitable for industrial motor drives but not certified for automotive under-hood deployment. | Select when cost sensitivity outweighs automotive qualification requirements and thermal margin allows 25 °C lower max TJ. |
| IRF1405ZPBF | Higher RDS(on) = 5.3 mΩ @ 10 V, TO-220 package, no AEC-Q101 or UIS testing. | Applicable in legacy 12 V automotive accessories where space and efficiency are less constrained. | Choose only for retrofit or non-safety-critical subsystems where thermal performance and ruggedness are secondary to procurement availability. |
Compared with STL220N3LLH6 and IRF1405ZPBF, the SQM120N03-1M5L delivers superior thermal capability (+25 °C junction limit), guaranteed avalanche robustness (336 mJ EAS), and automotive qualification - making it the sole option for new AEC-compliant designs demanding 120 A continuous current in TO-263 form factor.
Availability
SQM120N03-1M5L is available at Aetrix Electronics and suitable for electric power steering (EPS), 48 V mild-hybrid DC-DC converters, and on-board chargers (OBC) requiring stable component supply across multi-year automotive production programs.
Supply support for SQM120N03-1M5L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power management solutions for automotive, industrial, and computing markets.
The SQM120N03-1M5L belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-current, high-temperature switching in next-generation electrified vehicle architectures.
FAQ
What is the maximum continuous drain current rating for SQM120N03-1M5L at 125 °C case temperature?
The SQM120N03-1M5L maintains a continuous drain current rating of 120 A even at TC = 125 °C, as confirmed in the Absolute Maximum Ratings table. This reflects its robust thermal design and low RDS(on) temperature coefficient, enabling stable high-current operation without derating in thermally demanding automotive environments where the SQM120N03-1M5L is commonly deployed.
Is SQM120N03-1M5L suitable for synchronous rectification in a 48 V to 12 V DC-DC converter?
Yes, the SQM120N03-1M5L is well-suited for synchronous rectification due to its 1.5 mΩ RDS(on) at VGS = 10 V and low 0.81 V body diode forward voltage (VSD). Its 120 A current capability and 175 °C junction rating allow it to handle peak currents in multiphase buck converters, while the TO-263 package's low RthJC (0.4 °C/W) ensures effective heat removal - all verified in the SQM120N03-1M5L datasheet specifications.
Does SQM120N03-1M5L have integrated avalanche energy rating, and what is its value?
Yes, the SQM120N03-1M5L has a specified single-pulse avalanche energy rating (EAS) of 336 mJ, measured with L = 0.1 mH. This value is guaranteed per datasheet Section "Absolute Maximum Ratings" and validated by 100 % UIS testing - confirming the SQM120N03-1M5L can safely absorb inductive energy during fault conditions like load dump or short-circuit turn-off without failure.
What is the gate threshold voltage range for SQM120N03-1M5L, and how does it impact drive compatibility?
The gate threshold voltage (VGS(th)) for SQM120N03-1M5L is specified as 1.5 V minimum to 2.5 V maximum at ID = 250 μA. This low, tightly controlled range ensures reliable turn-on with standard 3.3 V and 5 V microcontrollers and gate drivers, while minimizing shoot-through risk in half-bridge configurations - a key design advantage confirmed in the SQM120N03-1M5L's DC characteristics table.
How does the thermal resistance of SQM120N03-1M5L compare to standard TO-220 MOSFETs, and why does it matter?
The SQM120N03-1M5L features a junction-to-case thermal resistance (RthJC) of just 0.4 °C/W, significantly lower than typical TO-220 devices (≥1.0 °C/W). This enables more efficient heat transfer to external heatsinks or PCB copper, allowing the SQM120N03-1M5L to sustain 120 A continuously at lower temperatures - critical for compact, fanless automotive modules where thermal headroom is limited and reliability depends on junction temperature control.
SQM120N03-1M5L_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.5mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 270 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 15605 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 375W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263
SQM120N03-1M5L_GE3 FAQ
1.How can I place an order for SQM120N03-1M5L_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQM120N03-1M5L_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQM120N03-1M5L_GE3 reliable?
The price and inventory of SQM120N03-1M5L_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQM120N03-1M5L_GE3 is usually 5 days.
3.What payment methods are accepted for SQM120N03-1M5L_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQM120N03-1M5L_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQM120N03-1M5L_GE3?
SQM120N03-1M5L_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQM120N03-1M5L_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQM120N03-1M5L_GE3?
For technical support, including SQM120N03-1M5L_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQM120N03-1M5L_GE3 requirements.
6.How does Aetrix verify that SQM120N03-1M5L_GE3 is sourced from the original manufacturer or authorized distributors?
All SQM120N03-1M5L_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQM120N03-1M5L_GE3 meets industry standards.
7.What is the process for return or replacement of SQM120N03-1M5L_GE3?
All SQM120N03-1M5L_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQM120N03-1M5L_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQM120N03-1M5L_GE3 part is unused and in its original packaging.
Return procedure for SQM120N03-1M5L_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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