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Vishay Siliconix SQM120N04-1M7L_GE3
- Part No.:
- SQM120N04-1M7L_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SQM120N04-1M7L_GE3.pdf
- Description:
- MOSFET N-CH 40V 120A TO263
- Quantity:
- Payment:
- Shipping:
Inventory:2,178
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Product details
Overview
SQM120N04-1M7L_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET optimized for high-current 40 V DC-DC conversion, motor control, and battery protection circuits. It delivers 120 A continuous drain current at TC = 25 °C, features RDS(on) of 1.7 mΩ at VGS = 10 V and 2.0 mΩ at VGS = 4.5 V, and operates up to +175 °C junction temperature in TO-263 (D2PAK) package.
For engineers reviewing the SQM120N04-1M7L_GE3 datasheet, SQM120N04-1M7L_GE3 pinout, SQM120N04-1M7L_GE3 application, or SQM120N04-1M7L_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, low RDS(on) at 4.5 V gate drive, 100 % Rg and UIS testing, and thermal resistance of 0.4 °C/W (junction-to-case), critical for thermally constrained automotive power stages.
Technical Context
This MOSFET employs Vishay's TrenchFET® silicon process to achieve ultra-low on-resistance while maintaining robust avalanche capability (EAS = 423 mJ) and fast switching (Qg = 190–285 nC, td(off) = 74–110 ns). Its gate threshold voltage (VGS(th) = 1.5–2.5 V) ensures reliable turn-on with standard 3.3 V or 5 V logic-level drivers.
The device is configured as a single N-channel enhancement-mode transistor with source-drain diode integration, rated for 40 V VDS and ±20 V VGS. Thermal design is supported by low RthJC (0.4 °C/W) and validated performance across -55 °C to +175 °C operating range-enabling use in under-hood automotive environments without derating.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS (Max) | 40 V - Supports 12 V/24 V automotive battery systems with margin against load dump transients. |
| RDS(on) @ VGS = 10 V | 1.7 mΩ - Enables <1.2 W conduction loss at 120 A, reducing heatsink requirements in high-power inverters. |
| RDS(on) @ VGS = 4.5 V | 2.0 mΩ - Ensures full enhancement with 5 V microcontroller GPIOs or PMIC gate drivers in space-constrained modules. |
| ID (Cont.) @ TC = 25 °C | 120 A - Sustains peak motor phase currents or DC-DC output stages without forced air cooling. |
| EAS (Single Pulse) | 423 mJ - Withstands inductive energy during fault conditions in solenoid drivers or H-bridge freewheeling. |
| RthJC | 0.4 °C/W - Allows direct mounting to copper-clad heatsinks for efficient thermal transfer in engine control units. |
| AEC-Q101 Qualified | Yes - Validated for automotive electronics per stress test requirements including HTGB, HTRB, and UHAST. |
Pinout & Package
Package: TO-263 (D2PAK), surface-mount, 3-lead, with exposed drain tab for thermal and electrical connection. Dimensions per Vishay Doc. #71198 (Version 1): 10.67 mm × 9.65 mm × 4.83 mm (L × W × H), lead pitch 2.54 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path input/output terminal | Electrically and thermally connected to PCB copper pour; must be soldered to large thermal pad for RthJC compliance. |
| Gate | Control electrode | Receives gate drive signal; requires low-inductance routing and gate resistor (Rg = 0.5–1.7 Ω typical) to damp ringing. |
| Source | Reference node for gate drive and current return | Forms common reference for driver IC feedback; layout must minimize source inductance to preserve switching speed. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® silicon technology | Delivers industry-leading RDS(on) × Qg figure-of-merit for reduced switching + conduction losses in high-frequency PWM. |
| 100 % Rg and UIS tested | Ensures gate robustness against ESD and guaranteed avalanche energy handling without screening failures in production. |
| AEC-Q101 qualified | Validated for automotive under-hood applications including transmission control, EPS, and ADAS power supplies. |
| Low RthJA (40 °C/W) | Enables natural-convection operation on 1"² FR-4 PCB-suitable for compact body control modules without heatsinks. |
| High-temperature operation (TJ = +175 °C) | Supports placement near heat sources (e.g., inverters, DC-DC converters) without thermal derating penalties. |
Applications
| Electric Power Steering (EPS) | Automotive DC-DC Converters |
|---|---|
Use Scenario: High-efficiency 12 V to 5 V/3.3 V buck converter supplying MCU, sensors, and CAN transceivers in EPS module. IC Role / Device Role / Timing Role: Primary synchronous rectifier MOSFET in high-side switch position, operating at 200–500 kHz. Use Value: 2.0 mΩ RDS(on) at 4.5 V enables >95 % efficiency at 30 A load, minimizing thermal rise in sealed EPS housing. |
Use Scenario: 48 V to 12 V bidirectional DC-DC stage in 48 V mild hybrid vehicle architecture. IC Role / Device Role / Timing Role: Low-side synchronous FET in interleaved buck-boost topology, handling 60–100 A continuous current. Use Value: 1.7 mΩ RDS(on) reduces conduction loss by 35 % vs. legacy 3 mΩ devices, extending battery range and lowering system temperature. |
| Engine Control Unit (ECU) Fuel Injector Drivers | On-Board Charger (OBC) Auxiliary Power Supply |
Use Scenario: High-side driver for multi-point fuel injectors requiring precise 12 V pulse-width modulation. IC Role / Device Role / Timing Role: Switching element controlling injector coil current; subjected to repetitive inductive kickback. Use Value: 423 mJ EAS rating absorbs flyback energy without snubber, simplifying circuit design and improving reliability over 10-year vehicle life. |
Use Scenario: Primary switch in auxiliary 12 V SMPS powering OBC control board, communication interfaces, and cooling fans. IC Role / Device Role / Timing Role: Main power FET in 300 kHz flyback or forward converter, operating continuously at ambient up to 105 °C. Use Value: +175 °C TJ rating and AEC-Q101 qualification ensure stable operation during prolonged charging cycles in hot garage environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | RDS(on) = 1.85 mΩ @ 10 V; TO-263 package; AEC-Q101 qualified; slightly higher Qg (310 nC). | Better suited for lower-frequency (<100 kHz) applications where gate drive strength is limited. | Select when prioritizing lower gate charge sensitivity over minimal conduction loss. |
| IRL1404ZPBF | RDS(on) = 4.0 mΩ @ 10 V; TO-220 package; not AEC-Q101 qualified; higher RthJC (1.25 °C/W). | Limited to non-automotive industrial or consumer power supplies with relaxed thermal and reliability requirements. | Choose only for cost-sensitive, non-automotive designs where 175 °C operation and automotive qualification are unnecessary. |
Compared with STL220N4F7AG and IRL1404ZPBF, SQM120N04-1M7L_GE3 offers the lowest RDS(on), best thermal resistance, and full automotive qualification-making it the preferred choice for high-reliability, high-current automotive power stages where efficiency, temperature margin, and long-term validation are mandatory.
Availability
SQM120N04-1M7L_GE3 is available at Aetrix Electronics and suitable for electric power steering, automotive DC-DC conversion, and engine control unit applications requiring stable component supply, long-lifecycle support, and AEC-Q101-compliant sourcing.
Supply support for SQM120N04-1M7L_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing applications.
The SQM120N04-1M7L_GE3 belongs to Vishay's TrenchFET® Gen IV automotive power MOSFET family, engineered specifically for high-current, high-temperature under-hood power switching in next-generation electrified vehicle systems.
FAQ
What is the maximum continuous drain current rating for SQM120N04-1M7L_GE3 at 125 °C case temperature?
The SQM120N04-1M7L_GE3 maintains a continuous drain current rating of 120 A even at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This reflects its robust thermal design and low RDS(on), enabling sustained high-current operation in thermally demanding automotive modules without current derating.
Is SQM120N04-1M7L_GE3 compatible with 5 V gate drive logic?
Yes, SQM120N04-1M7L_GE3 is fully compatible with 5 V gate drive logic. Its RDS(on) is specified at 2.0 mΩ with VGS = 4.5 V, and its gate threshold voltage (VGS(th)) ranges from 1.5 V to 2.5 V-ensuring strong enhancement and low on-resistance using standard 5 V microcontroller outputs or level-shifted gate drivers.
Does SQM120N04-1M7L_GE3 include integrated reverse polarity protection?
No, SQM120N04-1M7L_GE3 does not provide integrated reverse polarity protection. It is a standard N-channel power MOSFET; external circuitry such as a series P-channel FET or dedicated protection IC is required to implement reverse-battery or reverse-polarity safeguards in automotive power inputs.
What is the safe operating area (SOA) limitation for SQM120N04-1M7L_GE3 at DC operation?
At DC operation, the SQM120N04-1M7L_GE3 SOA is limited by its RDS(on) and thermal resistance. Per the datasheet SOA graph, at VDS = 10 V, the maximum sustainable ID is ~120 A; at VDS = 20 V, it drops to ~60 A due to power dissipation constraints (PD = ID² × RDS(on)). Layout and heatsinking directly determine actual DC current capability.
How is the drain-source diode performance characterized in SQM120N04-1M7L_GE3?
The intrinsic body diode of SQM120N04-1M7L_GE3 is characterized with a forward voltage VSD = 0.8–1.5 V at IF = 60 A and VGS = 0 V, and supports pulsed source current ISM = 480 A. Its reverse recovery behavior is not explicitly specified, so it is not recommended for high-frequency synchronous rectification without external Schottky clamping.
SQM120N04-1M7L_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.7mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 285 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 14606 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 375W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263
SQM120N04-1M7L_GE3 FAQ
1.How can I place an order for SQM120N04-1M7L_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQM120N04-1M7L_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQM120N04-1M7L_GE3 reliable?
The price and inventory of SQM120N04-1M7L_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQM120N04-1M7L_GE3 is usually 5 days.
3.What payment methods are accepted for SQM120N04-1M7L_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQM120N04-1M7L_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQM120N04-1M7L_GE3?
SQM120N04-1M7L_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQM120N04-1M7L_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQM120N04-1M7L_GE3?
For technical support, including SQM120N04-1M7L_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQM120N04-1M7L_GE3 requirements.
6.How does Aetrix verify that SQM120N04-1M7L_GE3 is sourced from the original manufacturer or authorized distributors?
All SQM120N04-1M7L_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQM120N04-1M7L_GE3 meets industry standards.
7.What is the process for return or replacement of SQM120N04-1M7L_GE3?
All SQM120N04-1M7L_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQM120N04-1M7L_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQM120N04-1M7L_GE3 part is unused and in its original packaging.
Return procedure for SQM120N04-1M7L_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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