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Vishay Siliconix SQM120N06-06_GE3
- Part No.:
- SQM120N06-06_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SQM120N06-06_GE3.pdf
- Description:
- MOSFET N-CH 60V 120A TO263
- Quantity:
- Payment:
- Shipping:
Inventory:3,101
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Product details
Overview
SQM120N06-06_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 60 V drain-source voltage, 120 A continuous drain current at TC = 25 °C, and 0.006 Ω RDS(on) at VGS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood motor control, DC-DC converter high-side switching, and battery disconnect applications.
For engineers reviewing the SQM120N06-06_GE3 datasheet, SQM120N06-06_GE3 pinout, SQM120N06-06_GE3 application, or SQM120N06-06_GE3 equivalent, key selection criteria include its low RDS(on) at high temperature, 100 % UIS tested ruggedness, TO-263 package thermal performance (RthJC = 0.65 °C/W), and gate charge profile optimized for fast switching in 48 V automotive systems.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve high current density and low conduction loss while maintaining robust avalanche capability (EAS = 211 mJ). Its gate threshold voltage (2.5–3.5 V) enables compatibility with standard 3.3 V and 5 V logic-level drivers when operated with sufficient VGS margin.
The device features a monolithic source-drain diode with VF = 0.9–1.5 V at IF = 75 A and is characterized for dynamic parameters including Qg = 96.5–145 nC, Qgd = 27.2 nC, and Crss = 336–420 pF - enabling accurate loss estimation in hard-switched and synchronous rectifier topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS (Max) | 60 V - supports 48 V nominal bus systems with 20 % overvoltage margin |
| RDS(on) @ VGS = 10 V | 0.006 Ω - delivers ≤ 8.6 W conduction loss at 120 A, critical for high-efficiency power stages |
| ID (Cont.) @ TC = 25 °C | 120 A - enables single-device replacement of paralleled lower-current MOSFETs in compact layouts |
| Junction Temp Range | −55 to +175 °C - certified for engine compartment placement without derating penalties below 125 °C |
| RthJC | 0.65 °C/W - allows direct heatsink mounting to sustain >76 W power dissipation at TC = 125 °C |
| EAS | 211 mJ - withstands repetitive inductive turn-off stress in motor drive and solenoid control |
| AEC-Q101 Qualified | Yes - validated for automotive electronics per stress test requirements including HTRB, H3TRB, and UHAST |
Pinout & Package
Package: TO-263 (D2PAK), surface-mount, thermally enhanced with exposed drain tab. Dimensions per Vishay Doc. #71198 (Version 1, Facility Code T).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Drain) | Main current path output / heat sink interface | Exposed copper tab - electrically connected to drain; must be soldered to PCB copper pour for thermal and electrical integrity |
| G (Gate) | Control input for channel modulation | Low-impedance input requiring <1.7 Ω gate resistance to limit ringing; sensitive to ESD (±20 V rating) |
| S (Source) | Reference node for gate drive and current return | Common connection point for load return path and gate driver ground; defines local 0 V reference for VGS |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Enables 0.0045 Ω typical RDS(on) at 25 °C while maintaining >65 A single-pulse avalanche current capability |
| 100 % UIS tested | Each unit validated for unclamped inductive switching stress - ensures reliability in motor commutation and relay driving |
| Low RthJC (0.65 °C/W) | Reduces thermal bottleneck between die and heatsink, enabling higher sustained power in space-constrained automotive modules |
| AEC-Q101 qualification | Confirms suitability for automotive safety-critical subsystems including EPS, HVAC blowers, and 48 V mild hybrid converters |
| Enhanced gate oxide reliability | Guaranteed ±100 nA IGSS at ±20 V - minimizes standby leakage in always-on vehicle networks |
Applications
| Electric Power Steering (EPS) | 48 V DC-DC Converter Primary Switch |
|---|---|
Use Scenario: High-current H-bridge driver for brushless steering motor with peak loads up to 100 A. IC Role / Device Role / Timing Role: High-side and low-side N-channel switch in three-phase inverter stage. Use Value: Low RDS(on) and 175 °C operation enable compact heatsink design; UIS rating prevents failure during sudden motor stall events. |
Use Scenario: Primary-side synchronous rectifier switch in bidirectional 48 V/12 V DC-DC converter for mild hybrid vehicles. IC Role / Device Role / Timing Role: Main power switch operating at 100–200 kHz with hard-switched PWM. Use Value: Optimized Qgd/Crss ratio reduces switching losses; TO-263 thermal performance sustains >85 % efficiency at full 3 kW load. |
| Automotive Battery Disconnect Unit (BDU) | Onboard Charger (OBC) Input Stage |
Use Scenario: Solid-state contactor replacing mechanical relay in 48 V battery management system for fault isolation. IC Role / Device Role / Timing Role: Single-pole, normally-open power switch controlling main battery feed to downstream subsystems. Use Value: 480 A pulsed drain rating handles short-circuit interruption; AEC-Q101 compliance ensures functional safety alignment. |
Use Scenario: AC-DC PFC boost switch in 6.6 kW onboard EV charger operating in continuous conduction mode. IC Role / Device Role / Timing Role: High-current, high-voltage switching element in interleaved boost stage. Use Value: 60 V rating accommodates 48 V system with transient headroom; low Coss improves light-load efficiency and EMI behavior. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6LF8AG | RDS(on) = 0.0042 Ω @ 10 V (lower), but TJ max = 175 °C not AEC-Q101 qualified | Acceptable for industrial 48 V converters; not approved for automotive safety-critical use | Select only if AEC-Q101 is not required and lowest conduction loss is prioritized |
| IRFB4115PBF | RDS(on) = 0.0055 Ω @ 10 V, TO-220 package, RthJC = 0.85 °C/W, no AEC-Q101 status | Limited to ambient-temperature chassis mounting; unsuitable for under-hood thermal environments | Use where board-level heatsinking is impractical and automotive qualification is unnecessary |
Compared with STL220N6LF8AG and IRFB4115PBF, the SQM120N06-06_GE3 uniquely combines AEC-Q101 qualification, TO-263 thermal performance, and production-proven UIS ruggedness - making it the only drop-in option for automotive-grade 48 V power switching where reliability under transient stress is non-negotiable.
Availability
SQM120N06-06_GE3 is available at Aetrix Electronics and suitable for electric power steering, 48 V DC-DC conversion, and battery disconnect applications requiring stable component supply across automotive production lifecycles.
Supply support for SQM120N06-06_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQM120N06-06_GE3 belongs to Vishay's automotive-qualified TrenchFET® power MOSFET family, engineered specifically for high-current, high-temperature switching in next-generation 48 V vehicle architectures.
FAQ
What is the maximum continuous drain current rating for SQM120N06-06_GE3 at 125 °C case temperature?
The SQM120N06-06_GE3 supports 80 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-263 package and ensures safe operation within the 175 °C junction temperature ceiling. Designers must verify PCB copper area and heatsink interface to maintain TC ≤ 125 °C under full load.
Is SQM120N06-06_GE3 suitable for synchronous rectification in a 48 V to 12 V DC-DC converter?
Yes, SQM120N06-06_GE3 is well-suited for synchronous rectification due to its low RDS(on) of 0.006 Ω at 10 V gate drive and fast dynamic parameters (Qgd = 27.2 nC, Crss = 336–420 pF). Its 175 °C rating and AEC-Q101 qualification make it appropriate for high-density, thermally demanding automotive DC-DC modules where body-diode conduction loss must be minimized.
Does SQM120N06-06_GE3 have integrated ESD protection on the gate terminal?
No, SQM120N06-06_GE3 does not include integrated gate ESD protection. Its gate oxide is rated for ±20 V VGS, and gate-source leakage is specified at ±100 nA - indicating standard gate structure without on-die protection diodes. External gate resistors and TVS clamping are recommended in noisy automotive environments to prevent damage during handling or system transients.
What is the typical total gate charge (Qg) of SQM120N06-06_GE3 at VGS = 10 V and VDS = 30 V?
The typical total gate charge (Qg) of SQM120N06-06_GE3 is 96.5 nC under test conditions of VGS = 10 V, VDS = 30 V, and ID = 75 A. This value is critical for calculating gate driver power requirements and estimating switching losses in high-frequency applications such as 48 V buck converters operating above 100 kHz.
How is the drain-source breakdown voltage (VDS) of SQM120N06-06_GE3 guaranteed across temperature?
The drain-source breakdown voltage (VDS) of SQM120N06-06_GE3 is guaranteed at 60 V minimum at TJ = 25 °C, with positive temperature coefficient behavior. The datasheet shows VDS increases to ~80 V at TJ = 175 °C (Fig. 10), ensuring robust overvoltage margin under hot-start and load-dump conditions common in automotive 48 V systems. This characteristic enhances system-level surge resilience without external clamping.
SQM120N06-06_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 6mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 145 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6495 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 230W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
SQM120N06-06_GE3 FAQ
1.How can I place an order for SQM120N06-06_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQM120N06-06_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQM120N06-06_GE3 reliable?
The price and inventory of SQM120N06-06_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQM120N06-06_GE3 is usually 5 days.
3.What payment methods are accepted for SQM120N06-06_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQM120N06-06_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQM120N06-06_GE3?
SQM120N06-06_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQM120N06-06_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQM120N06-06_GE3?
For technical support, including SQM120N06-06_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQM120N06-06_GE3 requirements.
6.How does Aetrix verify that SQM120N06-06_GE3 is sourced from the original manufacturer or authorized distributors?
All SQM120N06-06_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQM120N06-06_GE3 meets industry standards.
7.What is the process for return or replacement of SQM120N06-06_GE3?
All SQM120N06-06_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQM120N06-06_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQM120N06-06_GE3 part is unused and in its original packaging.
Return procedure for SQM120N06-06_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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