My Inquiry
My Account
Vishay Siliconix SQM120N10-09_GE3
- Part No.:
- SQM120N10-09_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SQM120N10-09_GE3.pdf
- Description:
- MOSFET N-CH 100V 120A TO263
- Quantity:
- Payment:
- Shipping:
Inventory:2,359
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SQM120N10-09_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 100 V drain-source voltage, 120 A continuous drain current at TC = 25 °C, and 0.0095 Ω RDS(on) at VGS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood motor control, DC-DC converter primary switching, and high-current battery disconnect applications.
For engineers reviewing the SQM120N10-09_GE3 datasheet, SQM120N10-09_GE3 pinout, SQM120N10-09_GE3 application, or SQM120N10-09_GE3 equivalent, this page delivers verified thermal resistance (RthJC = 0.4 °C/W), gate charge (Qg = 120–180 nC), avalanche energy rating (EAS = 266 mJ), and TO-263 package layout details critical for high-reliability automotive power design.
Technical Context
This MOSFET uses trench-gate silicon technology optimized for low conduction loss and fast switching in hard-switched topologies. Its 0.4 °C/W junction-to-case thermal resistance enables high-power operation with minimal heatsink mass when mounted on a PCB with copper fill.
The device features 100 % Rg and UIS testing per production lot, with guaranteed gate threshold voltage (2.5–3.5 V) and zero gate voltage drain leakage ≤ 150 μA at TJ = 175 °C - ensuring robust gate drive compatibility and low standby loss in 12 V/24 V automotive systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - supports 48 V nominal bus systems with 2× safety margin against load dump transients |
| RDS(on) | 0.0095 Ω @ VGS = 10 V, ID = 30 A - yields < 8.6 W conduction loss at 92 A (derated for TJ = 150 °C) |
| ID (cont.) | 120 A @ TC = 25 °C - requires active thermal management above ~73 A at TC = 125 °C per derating curve |
| EAS | 266 mJ - withstands single-pulse inductive energy without failure in motor freewheeling or relay snubbing |
| Qg | 120–180 nC - determines gate driver power requirement; compatible with standard 1–2 A peak drivers |
| RthJC | 0.4 °C/W - enables direct heatsink mounting for >300 W dissipation with < 12 °C ΔT across case interface |
| TJ range | −55 to +175 °C - certified for engine compartment placement without external thermal shielding |
Pinout & Package
Package: TO-263 (D2PAK), surface-mount, isolated drain tab, 3-lead configuration with G–D–S terminal arrangement. Tab is electrically connected to drain (D) and serves as primary thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control input; 0.25–2.3 Ω gate resistance affects switching speed and EMI; requires 10 V drive for full enhancement |
| 2 (D) | Drain | Main power output node; tied to exposed metal tab for low-inductance, low-thermal-resistance connection to heatsink/PCB copper |
| 3 (S) | Source | Power return and reference for gate drive; source inductance directly impacts switching stability and dV/dt immunity |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use including temperature cycling, HTRB, and UHAST - no additional qualification needed for Tier 1 programs |
| TrenchFET® architecture | Enables 0.0079 Ω typical RDS(on) at 25 °C while maintaining ruggedness against UIS and dv/dt-induced turn-on |
| 100 % Rg tested | Ensures consistent gate drive timing and eliminates batch-to-batch variation in switching behavior |
| Low RthJC (0.4 °C/W) | Reduces thermal interface complexity - achieves 175 °C operation with 1" × 1" FR4 PCB copper fill and minimal heatsink volume |
| High UIS rating | Withstands 73 A single-pulse avalanche current (IAS) - protects against inductive kickback in solenoid and motor control |
Applications
| Engine Start-Stop System | 48 V Mild Hybrid DC-DC Converter |
|---|---|
Use Scenario: High-current battery isolation during engine cranking to prevent voltage sag in infotainment and ADAS modules. IC Role / Device Role / Timing Role: Main power switch controlling bidirectional 48 V bus between starter battery and auxiliary loads. Use Value: 120 A rating and 175 °C operation ensure uninterrupted function during repeated cranking cycles with ambient temperatures up to 125 °C. |
Use Scenario: Primary-side synchronous rectifier in 48 V → 12 V bi-directional buck-boost converter for energy recovery. IC Role / Device Role / Timing Role: High-side switching element operating at 100–200 kHz with hard-switched PWM. Use Value: Low Qg (120–180 nC) and RDS(on) (0.0095 Ω) minimize switching and conduction losses, enabling >96 % efficiency at 5 kW output. |
| Electric Power Steering (EPS) Motor Driver | Commercial Vehicle Battery Management |
Use Scenario: Half-bridge leg in three-phase inverter driving brushless EPS motor with peak currents >100 A. IC Role / Device Role / Timing Role: Low-side switching device handling continuous 85 A phase current with 480 A pulsed capability. Use Value: 266 mJ EAS rating prevents failure during motor stall or short-circuit events; AEC-Q101 compliance ensures functional safety alignment. |
Use Scenario: Solid-state contactor replacing mechanical relays in 24 V/48 V commercial vehicle battery disconnect units. IC Role / Device Role / Timing Role: Single-pole, high-current main switch with integrated body diode for reverse polarity protection. Use Value: 0.9–1.5 V VSD at 85 A enables efficient freewheeling during fault interruption; TO-263 package allows direct bolt-down to chassis ground. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N10F7 | 100 V, 220 A, RDS(on) = 0.0035 Ω @ 10 V - lower RDS(on) but larger TO-220FP package; higher Qg (220 nC) | Requires larger PCB area and stronger gate driver; better suited for lower-frequency, ultra-low-loss industrial SMPS | Select STL220N10F7 only if conduction loss dominates and thermal interface allows larger footprint; not drop-in for SQM120N10-09_GE3 layouts |
| IRF1407PBF | 100 V, 110 A, RDS(on) = 0.011 Ω @ 10 V - higher on-resistance, TO-220 through-hole, no AEC-Q101 qualification | Limited to non-automotive industrial use; lacks automotive reliability validation and high-temp derating data | IRF1407PBF may serve as cost-sensitive alternative in non-automotive 12 V systems where AEC-Q101 is not mandated |
Compared with STL220N10F7 and IRF1407PBF, SQM120N10-09_GE3 uniquely balances automotive qualification, surface-mount TO-263 packaging, and 0.0095 Ω RDS(on) - making it optimal for space-constrained, thermally demanding 48 V automotive subsystems requiring zero requalification effort.
Availability
SQM120N10-09_GE3 is available at Aetrix Electronics and suitable for engine start-stop systems, 48 V mild hybrid converters, and electric power steering motor drivers requiring stable component supply across multi-year automotive production cycles.
Supply support for SQM120N10-09_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix designs and manufactures discrete semiconductors with emphasis on power MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQM120N10-09_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-current, high-temperature switching in 12 V–48 V vehicle electrical architectures.
FAQ
What is the maximum continuous drain current rating for SQM120N10-09_GE3 at 125 °C case temperature?
The SQM120N10-09_GE3 supports 73 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derated value accounts for increased RDS(on) at elevated temperature and ensures safe operation within thermal limits. The device maintains 0.0190 Ω RDS(on) max at this condition, confirming stable performance in under-hood environments.
Is SQM120N10-09_GE3 qualified to AEC-Q101, and what does that mean for automotive use?
Yes, SQM120N10-09_GE3 is AEC-Q101 qualified, meaning it has passed stress tests including temperature cycling, high-temperature reverse bias, and unbiased high-humidity accelerated stress testing. This qualification validates its reliability for automotive power applications such as motor control and battery management without requiring additional component-level qualification by the end customer.
What is the gate threshold voltage range for SQM120N10-09_GE3, and how does it affect drive circuit design?
The gate threshold voltage (VGS(th)) for SQM120N10-09_GE3 is 2.5–3.5 V at ID = 250 μA. This range ensures reliable turn-on with standard 3.3 V or 5 V logic-level drivers, but full enhancement requires ≥10 V gate drive to achieve the specified 0.0095 Ω RDS(on). Designers must ensure gate drive rails meet this requirement to avoid excessive conduction loss.
Can SQM120N10-09_GE3 be used in avalanche mode, and what is its rated single-pulse energy?
Yes, SQM120N10-09_GE3 is rated for single-pulse avalanche operation with EAS = 266 mJ and IAS = 73 A (L = 0.1 mH). This capability allows safe operation during inductive switching events like motor freewheeling or relay de-energization without external snubbers - provided pulse conditions match test criteria (≤300 μs, ≤2 % duty cycle).
What is the thermal resistance from junction to case (RthJC) for SQM120N10-09_GE3, and how should it be used in thermal design?
The junction-to-case thermal resistance (RthJC) of SQM120N10-09_GE3 is 0.4 °C/W, measured from die junction to the drain tab surface. This value enables accurate calculation of junction temperature rise when the tab is mounted to a heatsink or large copper plane. For example, at 375 W dissipation (PD max), ΔTJ-C = 150 °C - confirming why derating is essential above TC = 25 °C.
SQM120N10-09_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 9.5mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 180 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 8645 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 375W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
SQM120N10-09_GE3 FAQ
1.How can I place an order for SQM120N10-09_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQM120N10-09_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQM120N10-09_GE3 reliable?
The price and inventory of SQM120N10-09_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQM120N10-09_GE3 is usually 5 days.
3.What payment methods are accepted for SQM120N10-09_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQM120N10-09_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQM120N10-09_GE3?
SQM120N10-09_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQM120N10-09_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQM120N10-09_GE3?
For technical support, including SQM120N10-09_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQM120N10-09_GE3 requirements.
6.How does Aetrix verify that SQM120N10-09_GE3 is sourced from the original manufacturer or authorized distributors?
All SQM120N10-09_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQM120N10-09_GE3 meets industry standards.
7.What is the process for return or replacement of SQM120N10-09_GE3?
All SQM120N10-09_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQM120N10-09_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQM120N10-09_GE3 part is unused and in its original packaging.
Return procedure for SQM120N10-09_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SQM120N10-09_GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
