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Vishay Siliconix SQM120P10_10M1LGE3

Name: SQM120P10_10M1LGE3
Brand: Vishay Siliconix
SKU: SQM120P10_10M1LGE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQM120P10_10M1LGE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SQM120P10_10M1LGE3.pdf

Description:: MOSFET P-CH 100V 120A TO263

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Product details

Overview

SQM120P10_10M1LGE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET in TO-263 (D2PAK) package, rated for -100 V V_DS, 120 A continuous drain current at T_C = 25 °C, and R_DS(on) = 10.1 mΩ at V_GS = -10 V. It features AEC-Q101 qualification, 100 % R_g and UIS testing, and operates up to +175 °C junction temperature-designed for high-current DC load switching in 12 V/24 V automotive power distribution systems.

For engineers reviewing the SQM120P10_10M1LGE3 datasheet, SQM120P10_10M1LGE3 pinout, SQM120P10_10M1LGE3 application, or SQM120P10_10M1LGE3 equivalent, key selection criteria include its -100 V blocking capability, low on-resistance at -4.5 V gate drive (15.0 mΩ), integrated body diode with 110 ns reverse recovery time, thermal resistance of 0.4 °C/W (junction-to-case), and compliance with automotive reliability and stress-test requirements.

Technical Context

This MOSFET uses Vishay's TrenchFET® technology to achieve low R_DS(on) and high avalanche ruggedness (E_AS = 304 mJ). Its gate threshold voltage range (-1.5 V to -2.5 V) ensures reliable turn-on with standard automotive logic-level gate drivers while maintaining low leakage (±100 nA I_GSS) and tight V_GS(th) stability across temperature.

The device supports bidirectional current handling via its intrinsic source-drain diode (V_SD = -0.95 V typical at -100 A), with Q_rr = 385 nC and trr = 110 ns under defined test conditions-critical for synchronous rectification and regenerative braking circuits where diode recovery behavior directly impacts efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-100 V - Maximum drain-source blocking voltage for 12 V/24 V automotive battery rail protection and load dump tolerance
R_DS(on) @ V_GS = -10 V	10.1 mΩ - Enables <1.2 W conduction loss at 120 A, supporting high-efficiency high-current switching
R_DS(on) @ V_GS = -4.5 V	15.0 mΩ - Ensures robust operation with standard 5 V microcontroller or ASIC gate drivers
I_D (continuous, T_C = 25 °C)	-120 A - Supports high-power loads such as HVAC blowers, seat heaters, and ADAS camera power rails
Junction Temp Range	-55 °C to +175 °C - Qualified for under-hood and transmission-control module environments
R_thJC	0.4 °C/W - Enables high-power dissipation when mounted on heatsinked PCBs or metal-core substrates
Q_g (total)	125–190 nC - Determines gate driver strength requirement for <30 ns turn-on delay and <150 ns rise time

Pinout & Package

TO-263 (D2PAK) surface-mount package with exposed drain tab for thermal and electrical connection. Three terminals: Gate (G), Source (S), Drain (D). Tab is electrically connected to Drain and must be soldered to a thermally conductive copper area.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel conduction; requires -10 V or -4.5 V drive relative to source; input capacitance C_iss = 6750–9000 pF
S	Source	Reference node for gate drive and load return path; carries full load current and body diode forward current
D (Tab)	Drain	High-side or low-side power terminal; electrically tied to exposed metal tab; primary thermal path to PCB heatsink

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive applications including engine control, chassis, and powertrain modules per stress-test requirements
100 % R_g and UIS tested	Each unit screened for gate resistance consistency and unclamped inductive switching ruggedness (IAS = -78 A, EAS = 304 mJ)
TrenchFET® process	Delivers lower R_DS(on) and higher cell density vs. planar MOSFETs-reducing die size and thermal impedance
Low R_thJC (0.4 °C/W)	Enables >300 W power dissipation with minimal ΔT between junction and heatsinked PCB
Body diode with fast trr	110 ns reverse recovery time and 385 nC Q_rr support efficient freewheeling in H-bridge and buck converter topologies

Applications

Automotive Power Distribution	Engine Control Unit (ECU) Load Switching
Use Scenario: High-side switching of 12 V battery-fed loads (e.g., fuel pump, radiator fan) with reverse polarity and load dump protection. IC Role / Device Role / Timing Role: P-channel MOSFET used as high-side switch; gate driven by low-side N-channel driver or dedicated gate controller. Use Value: -100 V rating withstands ISO 7637-2 pulse 5a (load dump up to +120 V); R_DS(on) ≤ 15 mΩ minimizes voltage drop and self-heating during sustained 80–100 A operation.	Use Scenario: Low-side switching of solenoids, injectors, and ignition coils in gasoline/diesel ECUs requiring precise timing and high peak current. IC Role / Device Role / Timing Role: P-channel configured as low-side switch with source grounded; enables fast turn-off via active gate pull-up. Use Value: Fast fall time (200–300 ns) and low Q_gd (30 nC) allow accurate PWM control at ≥20 kHz; 175 °C rating supports placement near hot engine components.
ADAS Camera Power Management	Electric Power Steering (EPS) Motor Driver
Use Scenario: Redundant 12 V power supply switching for dual-camera modules with fault detection and current limiting. IC Role / Device Role / Timing Role: High-side switch with integrated current sense feedback path via R_DS(on) monitoring. Use Value: Tight R_DS(on) tolerance (±20 %) and stable V_GS(th) over temperature enable accurate current estimation without external shunt resistors.	Use Scenario: Half-bridge upper-leg switching in 24 V EPS motor drivers, operating continuously at elevated ambient temperatures. IC Role / Device Role / Timing Role: P-channel MOSFET in high-side position; paired with N-channel low-side for complementary drive. Use Value: 0.4 °C/W R_thJC and 125 W max power at T_C = 125 °C ensure thermal stability during 10 s peak torque events without derating.

Automotive Power Distribution

Engine Control Unit (ECU) Load Switching

Use Scenario: High-side switching of 12 V battery-fed loads (e.g., fuel pump, radiator fan) with reverse polarity and load dump protection.

IC Role / Device Role / Timing Role: P-channel MOSFET used as high-side switch; gate driven by low-side N-channel driver or dedicated gate controller.

Use Value: -100 V rating withstands ISO 7637-2 pulse 5a (load dump up to +120 V); R_DS(on) ≤ 15 mΩ minimizes voltage drop and self-heating during sustained 80–100 A operation.

Use Scenario: Low-side switching of solenoids, injectors, and ignition coils in gasoline/diesel ECUs requiring precise timing and high peak current.

IC Role / Device Role / Timing Role: P-channel configured as low-side switch with source grounded; enables fast turn-off via active gate pull-up.

Use Value: Fast fall time (200–300 ns) and low Q_gd (30 nC) allow accurate PWM control at ≥20 kHz; 175 °C rating supports placement near hot engine components.

ADAS Camera Power Management

Electric Power Steering (EPS) Motor Driver

Use Scenario: Redundant 12 V power supply switching for dual-camera modules with fault detection and current limiting.

IC Role / Device Role / Timing Role: High-side switch with integrated current sense feedback path via R_DS(on) monitoring.

Use Value: Tight R_DS(on) tolerance (±20 %) and stable V_GS(th) over temperature enable accurate current estimation without external shunt resistors.

Use Scenario: Half-bridge upper-leg switching in 24 V EPS motor drivers, operating continuously at elevated ambient temperatures.

IC Role / Device Role / Timing Role: P-channel MOSFET in high-side position; paired with N-channel low-side for complementary drive.

Use Value: 0.4 °C/W R_thJC and 125 W max power at T_C = 125 °C ensure thermal stability during 10 s peak torque events without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9540NPBF	R_DS(on) = 200 mΩ @ -10 V; 100 V rating; TO-220 package; no AEC-Q101 qualification	Not suitable for automotive production; limited to industrial or prototyping use due to lack of automotive stress screening	Select only for non-automotive cost-sensitive designs where thermal performance and qualification are secondary
STP120PF10	R_DS(on) = 11.5 mΩ @ -10 V; same -100 V rating; TO-220FP package; AEC-Q101 qualified but higher R_thJA (60 °C/W)	Lower power density and inferior thermal performance in surface-mount layouts; less suitable for compact ECU modules	Prefer when through-hole mounting is required or when legacy board layout prohibits D2PAK footprint change

Compared with IRF9540NPBF and STP120PF10, SQM120P10_10M1LGE3 delivers superior thermal performance (R_thJC = 0.4 °C/W), higher current capability (120 A vs. 33 A/120 A), and automotive-qualified reliability in a surface-mount package optimized for automated assembly and heatsinking.

Availability

SQM120P10_10M1LGE3 is available at Aetrix Electronics and suitable for automotive power distribution, engine control unit (ECU) load switching, and ADAS camera power management requiring stable component supply, long-term lifecycle assurance, and AEC-Q101-compliant traceability.

Supply support for SQM120P10_10M1LGE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency, and automotive-qualified solutions.

The SQM120P10_10M1LGE3 belongs to Vishay's TrenchFET® Automotive P-Channel MOSFET product line, engineered specifically for high-current, high-temperature switching in 12 V and 24 V vehicle electrical systems-including battery management, lighting, and motor control.

FAQ

What is the maximum continuous drain current rating for SQM120P10_10M1LGE3 at 125 °C case temperature?

The SQM120P10_10M1LGE3 supports -78 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-263 package and ensures safe operation under sustained high-temperature conditions typical in engine bay environments. The SQM120P10_10M1LGE3 maintains R_DS(on) ≤ 16.8 mΩ at this condition, preserving low conduction losses.

Is SQM120P10_10M1LGE3 suitable for high-side switching with 5 V gate drive?

Yes, SQM120P10_10M1LGE3 is characterized for R_DS(on) = 15.0 mΩ at V_GS = -4.5 V, making it compatible with standard 5 V logic-level gate drivers. Its gate threshold voltage range (-1.5 V to -2.5 V) ensures full enhancement with margin, and total gate charge (125–190 nC) is manageable using common gate driver ICs like the TC4427 or LM5113. The SQM120P10_10M1LGE3 does not require negative voltage generation for functional high-side operation.

Does SQM120P10_10M1LGE3 include avalanche energy rating information?

Yes, SQM120P10_10M1LGE3 specifies single-pulse avalanche energy E_AS = 304 mJ and single-pulse avalanche current I_AS = -78 A (L = 0.1 mH), both verified per JEDEC JESD24-1. These ratings confirm ruggedness against inductive switching transients in motor and solenoid drive applications. The SQM120P10_10M1LGE3 undergoes 100 % UIS testing during production, ensuring each unit meets this specification.

What is the thermal resistance from junction to ambient for SQM120P10_10M1LGE3 on a standard PCB?

The junction-to-ambient thermal resistance R_thJA for SQM120P10_10M1LGE3 is 40 °C/W when mounted on a 1" × 1" FR4 PCB with 2 oz. copper on both sides. This value assumes standard surface-mount layout per Vishay AN826 pad recommendations. For system-level thermal design, the much lower R_thJC = 0.4 °C/W should be used when the drain tab is connected to an external heatsink or large copper plane.

How does the body diode performance of SQM120P10_10M1LGE3 compare to standard rectifiers?

The SQM120P10_10M1LGE3 body diode has V_SD = -0.95 V (typical) at -100 A and reverse recovery time t_rr = 110 ns, with Q_rr = 385 nC. While not optimized as a dedicated freewheeling diode, its performance exceeds standard silicon rectifiers in speed and forward drop at high current, enabling acceptable efficiency in synchronous rectification and H-bridge configurations. The SQM120P10_10M1LGE3 body diode is integral to its function and fully characterized in the datasheet.

SQM120P10_10M1LGE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 10.1mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 190 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9000 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 375W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SQM120P10_10M1LGE3 FAQ

1.How can I place an order for SQM120P10_10M1LGE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQM120P10_10M1LGE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQM120P10_10M1LGE3 reliable?

The price and inventory of SQM120P10_10M1LGE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQM120P10_10M1LGE3 is usually 5 days.

3.What payment methods are accepted for SQM120P10_10M1LGE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQM120P10_10M1LGE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQM120P10_10M1LGE3?

SQM120P10_10M1LGE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQM120P10_10M1LGE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQM120P10_10M1LGE3?

For technical support, including SQM120P10_10M1LGE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQM120P10_10M1LGE3 requirements.

6.How does Aetrix verify that SQM120P10_10M1LGE3 is sourced from the original manufacturer or authorized distributors?

All SQM120P10_10M1LGE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQM120P10_10M1LGE3 meets industry standards.

7.What is the process for return or replacement of SQM120P10_10M1LGE3?

All SQM120P10_10M1LGE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQM120P10_10M1LGE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQM120P10_10M1LGE3 part is unused and in its original packaging.

Return procedure for SQM120P10_10M1LGE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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