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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQM200N04-1M1L_GE3

Name: SQM200N04-1M1L_GE3
Brand: Vishay Siliconix
SKU: SQM200N04-1M1L_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQM200N04-1M1L_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab)

Datasheet:: SQM200N04-1M1L_GE3.pdf

Description:: MOSFET N-CH 40V 200A TO263-7

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Product details

Overview

SQM200N04-1M1L_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET in TO-263-7L package, rated for 40 V V_DS, 200 A continuous drain current at T_C = 25 °C, and R_DS(on) = 1.1 mΩ at V_GS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for high-reliability traction inverter, on-board charger, and 48 V mild-hybrid DC-DC converter stages.

For engineers reviewing the SQM200N04-1M1L_GE3 datasheet, SQM200N04-1M1L_GE3 pinout, SQM200N04-1M1L_GE3 application, or SQM200N04-1M1L_GE3 equivalent, key selection criteria include its low R_DS(on) at 4.5 V gate drive (1.3 mΩ), 100 % R_g and UIS tested robustness, and thermal resistance of 0.4 °C/W (Junction-to-Case).

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in high-current automotive power stages. Its single N-channel configuration features a drain-connected tab for direct thermal mounting and supports synchronous rectification with integrated body diode (V_SD = 0.8–1.5 V at I_F = 60 A).

The device delivers 275 nC typical total gate charge (Q_g) at V_GS = 10 V, V_DS = 20 V, enabling efficient gate driver sizing for hard-switched topologies. Its 16,524 pF input capacitance (C_iss) and 484 pF reverse transfer capacitance (C_rss) support stable operation under high dv/dt conditions typical in 48 V–400 V battery systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 48 V nominal battery systems with transient margin
R_DS(on) @ V_GS = 10 V	1.1 mΩ - Enables <1 W conduction loss at 30 A, critical for high-efficiency inverters
R_DS(on) @ V_GS = 4.5 V	1.3 mΩ - Ensures robust turn-on with standard 5 V logic-level gate drivers
I_D (continuous)	200 A @ T_C = 25 °C - Supports high-power motor control and DC-DC phases without parallel devices
Q_g (total)	275 nC typical - Determines gate driver power requirement and switching loss trade-off
R_thJC	0.4 °C/W - Allows direct heatsink mounting for >300 W dissipation in compact layouts
T_J max	+175 °C - Meets under-hood thermal requirements per AEC-Q101 stress testing

Pinout & Package

TO-263-7L (D2PAK-7) package with exposed drain tab for thermal and electrical connection. Seven terminals: three source pins (S), one gate (G), one drain (D), and two additional source connections - all electrically common to internal source node.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal; requires ≤12.8 Ω gate resistance for optimal EMI and dv/dt control
D	Drain	Main high-side power path; internally connected to metal tab for low-inductance, low-thermal-resistance mounting
S1–S3	Source	Three dedicated source terminals reduce package inductance and improve current sharing in high-di/dt applications

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain use including engine bay and battery pack environments
100 % R_g and UIS tested	Each unit screened for gate resistance consistency and unclamped inductive switching ruggedness
TrenchFET® architecture	Delivers lowest R_DS(on) × Q_g figure-of-merit among 40 V automotive MOSFETs in TO-263-7L
Drain-connected tab	Enables direct thermal interface to heatsink while maintaining low parasitic inductance in high-frequency switching
Low C_rss/C_iss ratio	2.9 % - Reduces Miller effect, improving noise immunity and gate drive stability in half-bridge configurations

Applications

Electric Power Steering (EPS)	On-Board Charger (OBC) Primary Switch
Use Scenario: High-current H-bridge driving 12–48 V brushed/BLDC steering motors with peak loads up to 150 A. IC Role / Device Role / Timing Role: Low-side and high-side switching element in dual-phase or three-phase inverter stage. Use Value: 1.1 mΩ R_DS(on) minimizes heat generation during sustained assist torque, extending system lifetime in confined EPS module enclosures.	Use Scenario: Primary-side switching in 3.3 kW or 6.6 kW AC/DC PFC and LLC resonant converters. IC Role / Device Role / Timing Role: Main power switch in interleaved boost or full-bridge LLC primary leg. Use Value: 0.4 °C/W R_thJC enables direct heatsink mounting, reducing thermal interface layers and improving reliability in sealed OBC housings.
Traction Inverter Auxiliary Stage	48 V Mild-Hybrid DC-DC Converter
Use Scenario: Auxiliary 12 V/48 V bi-directional converter supplying gate drivers, sensors, and MCU in main inverter control board. IC Role / Device Role / Timing Role: Synchronous rectifier or active clamp switch operating at 50–200 kHz. Use Value: 1.3 mΩ R_DS(on) at 4.5 V ensures full enhancement with isolated gate drivers, eliminating external level-shifting circuitry.	Use Scenario: Step-down conversion from 48 V battery to 12 V subsystem rail in start-stop and regenerative braking systems. IC Role / Device Role / Timing Role: High-current buck switch handling up to 200 A peak in multiphase topology. Use Value: Three-source-pin layout reduces current loop inductance, suppressing voltage overshoot during 500 A/μs di/dt transients.

Electric Power Steering (EPS)

On-Board Charger (OBC) Primary Switch

Use Scenario: High-current H-bridge driving 12–48 V brushed/BLDC steering motors with peak loads up to 150 A.

IC Role / Device Role / Timing Role: Low-side and high-side switching element in dual-phase or three-phase inverter stage.

Use Value: 1.1 mΩ R_DS(on) minimizes heat generation during sustained assist torque, extending system lifetime in confined EPS module enclosures.

Use Scenario: Primary-side switching in 3.3 kW or 6.6 kW AC/DC PFC and LLC resonant converters.

IC Role / Device Role / Timing Role: Main power switch in interleaved boost or full-bridge LLC primary leg.

Use Value: 0.4 °C/W R_thJC enables direct heatsink mounting, reducing thermal interface layers and improving reliability in sealed OBC housings.

Traction Inverter Auxiliary Stage

48 V Mild-Hybrid DC-DC Converter

Use Scenario: Auxiliary 12 V/48 V bi-directional converter supplying gate drivers, sensors, and MCU in main inverter control board.

IC Role / Device Role / Timing Role: Synchronous rectifier or active clamp switch operating at 50–200 kHz.

Use Value: 1.3 mΩ R_DS(on) at 4.5 V ensures full enhancement with isolated gate drivers, eliminating external level-shifting circuitry.

Use Scenario: Step-down conversion from 48 V battery to 12 V subsystem rail in start-stop and regenerative braking systems.

IC Role / Device Role / Timing Role: High-current buck switch handling up to 200 A peak in multiphase topology.

Use Value: Three-source-pin layout reduces current loop inductance, suppressing voltage overshoot during 500 A/μs di/dt transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	R_DS(on) = 0.75 mΩ @ 10 V; TO-263-7; AEC-Q101; higher C_iss (23,000 pF)	Better conduction loss but higher gate drive energy; less suitable for >150 kHz switching	Prefer when minimizing conduction loss dominates over switching loss in <100 kHz applications
IXTH200N04S3	R_DS(on) = 1.25 mΩ @ 10 V; TO-247AC; non-automotive; R_thJC = 0.35 °C/W	Larger footprint, no AEC-Q101 qualification; higher thermal performance but not automotive-compliant	Select only for industrial or non-automotive designs requiring maximum thermal headroom

Compared with STL220N4F7AG and IXTH200N04S3, SQM200N04-1M1L_GE3 offers balanced conduction-switching trade-off, AEC-Q101 compliance, and TO-263-7L's optimized PCB thermal management-making it the preferred choice for space-constrained, thermally demanding automotive power modules.

Availability

SQM200N04-1M1L_GE3 is available at Aetrix Electronics and suitable for electric power steering, on-board chargers, and 48 V mild-hybrid DC-DC converters requiring stable component supply across multi-year automotive production cycles.

Supply support for SQM200N04-1M1L_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQM200N04-1M1L_GE3 belongs to Vishay's TrenchFET® Gen IV automotive power MOSFET family, engineered specifically for high-current, high-temperature traction and charging systems in ISO 26262-compliant vehicle architectures.

FAQ

What is the maximum continuous drain current rating for SQM200N04-1M1L_GE3 at 125 °C case temperature?

SQM200N04-1M1L_GE3 maintains a continuous drain current rating of 200 A at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This reflects its robust thermal design and AEC-Q101 qualification for sustained high-temperature operation in automotive power stages. The device's R_DS(on) increases predictably with junction temperature, remaining within safe SOA limits up to +175 °C.

Is SQM200N04-1M1L_GE3 suitable for synchronous rectification in a 48 V to 12 V DC-DC converter?

Yes, SQM200N04-1M1L_GE3 is well-suited for synchronous rectification in 48 V to 12 V DC-DC converters. Its 1.3 mΩ R_DS(on) at V_GS = 4.5 V ensures full enhancement with standard gate drivers, and its 0.8–1.5 V body diode forward voltage (V_SD) at 60 A supports efficient freewheeling. The TO-263-7L package's low R_thJC (0.4 °C/W) also helps manage heat in high-duty-cycle operation.

Does SQM200N04-1M1L_GE3 have a Kelvin source connection?

No, SQM200N04-1M1L_GE3 does not feature a dedicated Kelvin source pin. It uses three standard source terminals (S1–S3) electrically tied to the internal source node. While this improves current distribution and reduces package inductance, it does not provide separate sense-path isolation like true Kelvin-source MOSFETs. For precision current sensing, external shunt or Hall-based solutions are recommended.

What is the avalanche energy rating for SQM200N04-1M1L_GE3, and how is it validated?

SQM200N04-1M1L_GE3 has a single-pulse avalanche energy rating (E_AS) of 500 mJ, measured with L = 0.1 mH. This rating is validated per JEDEC standards using unclamped inductive switching (UIS) tests, and 100 % of units undergo UIS screening. The device's rugged trench structure and optimized cell layout ensure consistent avalanche performance across its qualified temperature range (−55 °C to +175 °C).

Can SQM200N04-1M1L_GE3 be used in a half-bridge configuration without external gate resistors?

No - SQM200N04-1M1L_GE3 should always be used with external gate resistors in half-bridge configurations. Its typical gate resistance (R_g) is 8.5 Ω, but datasheet-recommended gate drive design uses 1 Ω for switching characterization. External resistors (typically 2–10 Ω) are required to control dv/dt, suppress ringing, and prevent shoot-through. The device's 484 pF C_rss makes it sensitive to Miller-induced turn-on without proper gate control.

SQM200N04-1M1L_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 200A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.1mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 413 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 20655 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 375W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263-7

SQM200N04-1M1L_GE3 FAQ

1.How can I place an order for SQM200N04-1M1L_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQM200N04-1M1L_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQM200N04-1M1L_GE3 reliable?

The price and inventory of SQM200N04-1M1L_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQM200N04-1M1L_GE3 is usually 5 days.

3.What payment methods are accepted for SQM200N04-1M1L_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQM200N04-1M1L_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQM200N04-1M1L_GE3?

SQM200N04-1M1L_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQM200N04-1M1L_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQM200N04-1M1L_GE3?

For technical support, including SQM200N04-1M1L_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQM200N04-1M1L_GE3 requirements.

6.How does Aetrix verify that SQM200N04-1M1L_GE3 is sourced from the original manufacturer or authorized distributors?

All SQM200N04-1M1L_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQM200N04-1M1L_GE3 meets industry standards.

7.What is the process for return or replacement of SQM200N04-1M1L_GE3?

All SQM200N04-1M1L_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQM200N04-1M1L_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQM200N04-1M1L_GE3 part is unused and in its original packaging.

Return procedure for SQM200N04-1M1L_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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