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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQM200N04-1M7L_GE3

Name: SQM200N04-1M7L_GE3
Brand: Vishay Siliconix
SKU: SQM200N04-1M7L_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQM200N04-1M7L_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab)

Datasheet:: SQM200N04-1M7L_GE3.pdf

Description:: MOSFET N-CH 40V 200A TO263-7

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Product details

Overview

SQM200N04-1M7L from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 40 V drain-source voltage, 200 A continuous drain current at 25 °C, and 0.0017 Ω R_DS(on) at V_GS = 10 V. It operates up to +175 °C junction temperature and is housed in a TO-263-7L (D2PAK) package with low thermal resistance (R_thJC = 0.4 °C/W), making it suitable for high-current DC motor drives and 48 V battery-powered traction inverters.

For engineers reviewing the SQM200N04-1M7L datasheet, SQM200N04-1M7L pinout, SQM200N04-1M7L application, or SQM200N04-1M7L equivalent, key selection criteria include its AEC-Q101 qualification, 100 % R_g and UIS testing, 95 A single-pulse avalanche current capability, and validated performance under 175 °C junction operation - critical for automotive powertrain and high-reliability industrial switching.

Technical Context

This MOSFET employs Vishay's TrenchFET® process to achieve ultra-low on-resistance while maintaining robust avalanche energy handling (E_AS = 451 mJ). Its gate threshold voltage (V_GS(th) = 1.5–2.5 V) enables reliable turn-on with standard 4.5 V logic-level drivers, and its total gate charge (Q_g = 194–291 nC) supports efficient high-frequency switching in synchronous rectification and PWM-controlled loads.

The device features integrated source-drain diode with V_SD = 0.8–1.5 V at I_F = 60 A and exhibits stable R_DS(on) over temperature - 0.0034 Ω max at 175 °C and V_GS = 10 V - ensuring predictable conduction loss in thermally demanding environments such as engine bay-mounted DC/DC converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 48 V nominal systems with transient margin
R_DS(on) @ V_GS = 10 V	0.0017 Ω - Enables ≤0.68 W conduction loss at 200 A, reducing heatsink requirements
R_DS(on) @ V_GS = 4.5 V	0.0020 Ω - Supports direct drive from automotive microcontrollers without level-shifting
I_D (continuous, T_C = 25 °C)	200 A - Sustains peak load currents in electric power steering and HVAC blowers
E_AS	451 mJ - Withstands inductive kickback in solenoid and relay driver circuits
R_thJC	0.4 °C/W - Enables high-power dissipation with minimal junction-to-case temperature rise
AEC-Q101 qualified	Verified for automotive use per stress test requirements - mandatory for powertrain modules

Pinout & Package

Package: TO-263-7L (D2PAK-7), surface-mount with exposed drain tab for thermal and electrical connection. Dimensions per Vishay document 63782: 15.875 mm × 10.414 mm × 4.826 mm (L × W × H), 7-pin layout with 3 drain, 2 gate, and 2 source terminals.

Pin/Terminal	Circuit Role	Design Meaning
G (Pin 1 & 4)	Gate input	Dual gate pins reduce gate loop inductance and improve switching stability in high-di/dt applications
D (Pin 2, 3 & 7)	Drain connection	Three parallel drain pins + large exposed tab minimize resistance and enhance thermal transfer to PCB copper
S (Pin 5 & 6)	Source return	Dual source pins lower source inductance, critical for minimizing voltage spikes during turn-off

Key Features

Feature	Design Value
TrenchFET® technology	Delivers industry-leading R_DS(on) × area efficiency for compact high-current designs
100 % R_g tested	Ensures consistent gate drive timing and eliminates batch variation in switching speed
100 % UIS tested	Guarantees ruggedness against unclamped inductive switching stress in motor control
Low R_thJC = 0.4 °C/W	Allows >300 W power dissipation with <125 °C junction rise above case temperature
175 °C operating TJ	Supports placement in high-ambient zones (e.g., near engines or inverters) without derating

Applications

Electric Power Steering (EPS)	48 V Mild Hybrid DC/DC Converter
Use Scenario: High-efficiency bidirectional H-bridge driving 3-phase EPS motor with regenerative braking. IC Role / Device Role / Timing Role: Main high-side and low-side switching element in each half-bridge leg. Use Value: Low R_DS(on) minimizes conduction loss during sustained assist torque; AEC-Q101 qualification ensures reliability across vehicle lifetime.	Use Scenario: Primary switch in synchronous buck converter stepping 48 V battery down to 12 V for legacy loads. IC Role / Device Role / Timing Role: High-current, high-duty-cycle power switch with fast turn-off to reduce dead-time losses. Use Value: Dual gate pins and low Q_gd/Q_g ratio enable clean commutation at 100–200 kHz; 175 °C rating accommodates under-hood thermal environment.
Onboard Charger (OBC) Input Stage	Commercial HVAC Blower Inverter
Use Scenario: AC-DC PFC boost switch in 6.6 kW OBC for BEVs, operating at 65–100 kHz. IC Role / Device Role / Timing Role: Fast-switching, high-current boost transistor with low C_oss and Crss for ZVS compatibility. Use Value: C_oss = 1592–1990 pF and Crss = 928–1160 pF support soft-switching; 451 mJ E_AS handles line surge events.	Use Scenario: Inverter output stage driving high-inertia centrifugal blower in data center cooling units. IC Role / Device Role / Timing Role: Output phase-leg switch in 3-phase VFD with 10–20 kHz PWM carrier. Use Value: 200 A continuous rating sustains 30+ second stall currents; TO-263-7L footprint allows direct thermal coupling to heatsink via soldered tab.

Electric Power Steering (EPS)

48 V Mild Hybrid DC/DC Converter

Use Scenario: High-efficiency bidirectional H-bridge driving 3-phase EPS motor with regenerative braking.

IC Role / Device Role / Timing Role: Main high-side and low-side switching element in each half-bridge leg.

Use Value: Low R_DS(on) minimizes conduction loss during sustained assist torque; AEC-Q101 qualification ensures reliability across vehicle lifetime.

Use Scenario: Primary switch in synchronous buck converter stepping 48 V battery down to 12 V for legacy loads.

IC Role / Device Role / Timing Role: High-current, high-duty-cycle power switch with fast turn-off to reduce dead-time losses.

Use Value: Dual gate pins and low Q_gd/Q_g ratio enable clean commutation at 100–200 kHz; 175 °C rating accommodates under-hood thermal environment.

Onboard Charger (OBC) Input Stage

Commercial HVAC Blower Inverter

Use Scenario: AC-DC PFC boost switch in 6.6 kW OBC for BEVs, operating at 65–100 kHz.

IC Role / Device Role / Timing Role: Fast-switching, high-current boost transistor with low C_oss and Crss for ZVS compatibility.

Use Value: C_oss = 1592–1990 pF and Crss = 928–1160 pF support soft-switching; 451 mJ E_AS handles line surge events.

Use Scenario: Inverter output stage driving high-inertia centrifugal blower in data center cooling units.

IC Role / Device Role / Timing Role: Output phase-leg switch in 3-phase VFD with 10–20 kHz PWM carrier.

Use Value: 200 A continuous rating sustains 30+ second stall currents; TO-263-7L footprint allows direct thermal coupling to heatsink via soldered tab.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	40 V, 220 A, R_DS(on) = 0.0013 Ω @ 10 V, TO-263-7, AEC-Q101	Lower R_DS(on) but higher Q_g (320 nC); less optimized for high-frequency switching	Preferred where conduction loss dominates and switching frequency ≤ 50 kHz
IXTH200N04S	40 V, 200 A, R_DS(on) = 0.0018 Ω @ 10 V, TO-247-3, not AEC-Q101	Higher R_thJA, through-hole only, no automotive qualification	Suitable for industrial UPS or solar inverters where AEC-Q101 is not required

Compared with STL220N4F7AG and IXTH200N04S, the SQM200N04-1M7L offers optimal balance of low gate charge (194–291 nC), AEC-Q101 compliance, and thermal performance in surface-mount form - making it the preferred choice for space-constrained, high-reliability automotive power stages.

Availability

SQM200N04-1M7L is available at Aetrix Electronics and suitable for electric power steering, 48 V mild hybrid DC/DC conversion, and onboard charger applications requiring stable component supply, long-term lifecycle support, and traceable automotive-grade sourcing.

Supply support for SQM200N04-1M7L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing markets.

The SQM200N04-1M7L belongs to Vishay's TrenchFET® Gen IV automotive power MOSFET family, engineered specifically for high-current, high-temperature switching in next-generation 48 V architectures and xEV powertrain subsystems.

FAQ

What is the maximum continuous drain current rating for SQM200N04-1M7L at 125 °C case temperature?

The SQM200N04-1M7L supports 193 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-263-7L package and ensures safe operation in high-ambient environments like engine compartments. The device maintains full functionality and AEC-Q101 compliance across this range.

Is SQM200N04-1M7L suitable for synchronous rectification in a 48 V to 12 V DC/DC converter?

Yes, SQM200N04-1M7L is well-suited for synchronous rectification due to its low R_DS(on) of 0.0017 Ω at V_GS = 10 V and fast switching parameters (t_d(off) = 70–105 ns, t_f = 16–24 ns). Its dual gate and source pins reduce parasitic inductance, improving efficiency and noise immunity in high-frequency (100–300 kHz) buck topologies used in 48 V automotive DC/DC converters.

Does SQM200N04-1M7L have integrated ESD protection on the gate?

No, SQM200N04-1M7L does not include integrated gate ESD protection. Gate-source leakage (I_GSS) is specified at ±100 nA max at ±20 V, and the absolute maximum V_GS is ±20 V. External gate protection (e.g., Zener clamp or RC snubber) is recommended in systems exposed to board-level ESD or high dv/dt transients, especially in automotive harness-connected modules.

What is the typical total gate charge (Q_g) of SQM200N04-1M7L and how does it impact gate driver selection?

The typical total gate charge (Q_g) of SQM200N04-1M7L is 194 nC at V_GS = 10 V, V_DS = 20 V, and I_D = 20 A. This value determines peak gate current demand: for 50 ns turn-on time, ~3.9 A peak drive is needed. Gate drivers such as the UCC27531 or TC4427 are appropriate, provided they support ≥5 A peak output and handle the device's 0.25–1.8 Ω gate resistance range.

Can SQM200N04-1M7L be used in parallel configurations for higher current handling?

Yes, SQM200N04-1M7L is designed for paralleling: its positive temperature coefficient of R_DS(on) ensures current sharing stability, and the dual gate pins allow symmetrical gate routing. Layout best practices - matched trace lengths, Kelvin source connections, and individual gate resistors - are essential. Derating to ≤170 A per device is recommended in parallel arrays to maintain thermal margin and reliability.

SQM200N04-1M7L_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 200A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.7mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 291 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 11168 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 375W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263-7

SQM200N04-1M7L_GE3 FAQ

1.How can I place an order for SQM200N04-1M7L_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQM200N04-1M7L_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQM200N04-1M7L_GE3 reliable?

The price and inventory of SQM200N04-1M7L_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQM200N04-1M7L_GE3 is usually 5 days.

3.What payment methods are accepted for SQM200N04-1M7L_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQM200N04-1M7L_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQM200N04-1M7L_GE3?

SQM200N04-1M7L_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQM200N04-1M7L_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQM200N04-1M7L_GE3?

For technical support, including SQM200N04-1M7L_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQM200N04-1M7L_GE3 requirements.

6.How does Aetrix verify that SQM200N04-1M7L_GE3 is sourced from the original manufacturer or authorized distributors?

All SQM200N04-1M7L_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQM200N04-1M7L_GE3 meets industry standards.

7.What is the process for return or replacement of SQM200N04-1M7L_GE3?

All SQM200N04-1M7L_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQM200N04-1M7L_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQM200N04-1M7L_GE3 part is unused and in its original packaging.

Return procedure for SQM200N04-1M7L_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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