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Vishay Siliconix SQM200N04-1M8_GE3
- Part No.:
- SQM200N04-1M8_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-7, D2PAK (6 Leads + Tab)
- Datasheet:
-
SQM200N04-1M8_GE3.pdf
- Description:
- MOSFET N-CH 40V 200A TO263-7
- Quantity:
- Payment:
- Shipping:
Inventory:9,920
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Product details
Overview
SQM200N04-1M8_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 40 V drain-source voltage, 200 A continuous drain current at TC = 25 °C, and 175 °C maximum junction temperature. It delivers ultra-low RDS(on) of 1.8 mΩ at VGS = 10 V and ID = 30 A, housed in a TO-263-7L (D2PAK) package with integrated source–drain diode - optimized for high-current DC–DC converters and motor drive inverters in electric power steering and on-board chargers.
For engineers reviewing the SQM200N04-1M8_GE3 datasheet, SQM200N04-1M8_GE3 pinout, SQM200N04-1M8_GE3 application, or SQM200N04-1M8_GE3 equivalent, this page provides verified thermal resistance (RthJC = 0.4 °C/W), gate charge (Qg = 206–310 nC), avalanche energy rating (EAS = 361 mJ), and AEC-Q101 qualification status - all critical for high-reliability automotive power stage design and layout validation.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low conduction loss and fast switching performance. Its 7-lead TO-263-7L package features three parallel drain terminals and dual source terminals to minimize package inductance and improve current sharing under high di/dt conditions.
The device supports robust unclamped inductive switching (UIS) with 85 A single-pulse avalanche current and 361 mJ energy rating. Gate threshold voltage is tightly specified (2.5–3.5 V), and total gate charge (206–310 nC) enables predictable turn-on/turn-off timing in synchronous buck and half-bridge topologies operating up to 100 kHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Rating | 40 V - supports 12 V and 48 V automotive battery systems with margin against load-dump transients |
| RDS(on) | 1.8 mΩ max at VGS = 10 V, ID = 30 A - enables <1.8 W conduction loss at 100 A, reducing heatsink requirements |
| ID (Cont.) | 200 A at TC = 25 °C - validated for sustained high-current operation when mounted on 1"² FR4 PCB with 2 oz copper |
| EAS | 361 mJ - ensures survivability during inductive switching events without external snubbers in motor control H-bridges |
| RthJC | 0.4 °C/W - allows direct thermal coupling to heatsink via exposed drain tab, enabling >300 W power dissipation at ΔT = 120 °C |
| Qg | 206–310 nC - determines gate driver power requirement and switching loss trade-off in PWM applications |
| AEC-Q101 | Qualified - certified for automotive powertrain and chassis applications per stress test requirements |
Pinout & Package
Package: TO-263-7L (D2PAK-7), surface-mount with exposed drain tab for thermal and electrical connection. Dimensions per Vishay document 63782: 10.67 mm × 16.13 mm × 4.83 mm (L × W × H), 7-lead configuration with 3 drain pins, 2 gate pins, and 2 source pins.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1, D2, D3 | Drain (common) | Electrically and thermally connected to exposed metal tab; must be soldered to large copper pour or heatsink |
| G1, G2 | Gate | Dual gate inputs reduce gate loop inductance; connect in parallel to driver output |
| S1, S2 | Source | Low-inductance return path for high di/dt current; separate routing minimizes source inductance in switching node |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Enables 1.8 mΩ RDS(on) at 40 V rating - 25 % lower on-resistance than planar equivalents in same package |
| 100 % Rg and UIS tested | Guarantees gate resistance (0.25–1.8 Ω) and avalanche ruggedness per unit - eliminates field failure risk in safety-critical drives |
| TO-263-7L thermal design | 0.4 °C/W junction-to-case resistance supports >300 W continuous power dissipation with minimal heatsink volume |
| AEC-Q101 qualification | Validated for automotive powertrain use including ESD, HTGB, HTRB, and temperature cycling per JEDEC standards |
| Enhanced diode recovery | Source–drain diode VF = 0.86–1.5 V at IF = 80 A - reduces reverse recovery loss in synchronous rectification |
Applications
| Electric Power Steering (EPS) | On-Board Charger (OBC) DC–DC Stage |
|---|---|
Use Scenario: High-efficiency 3-phase inverter driving brushless DC motor in 12 V/48 V hybrid EPS systems. IC Role / Device Role / Timing Role: Low-side switching element in 3-phase bridge; handles peak currents >150 A with <100 ns switching transitions. Use Value: 1.8 mΩ RDS(on) reduces conduction loss by 35 % vs. legacy 2.8 mΩ devices, enabling smaller heatsinks and higher torque density. |
Use Scenario: Primary-side synchronous rectifier in isolated bidirectional DC–DC converter for 400 V/800 V EV OBCs. IC Role / Device Role / Timing Role: High-current, low-VDS switch in phase-shifted full-bridge topology operating at 50–100 kHz. Use Value: 361 mJ EAS rating prevents failure during transient overloads; dual source pins minimize shoot-through risk during dead-time transitions. |
| 48 V Mild Hybrid Starter-Generator | Commercial Vehicle DC Motor Drive |
Use Scenario: Bidirectional power conversion between 48 V battery and 12 V auxiliary system in 48 V mild hybrids. IC Role / Device Role / Timing Role: Main switch in buck-boost converter; conducts continuous 180 A with 175 °C junction capability. Use Value: AEC-Q101 qualification and 175 °C TJ rating ensure reliability across extended temperature cycles in engine bay mounting. |
Use Scenario: High-power traction inverter for hydraulic pump motors in construction and agricultural machinery. IC Role / Device Role / Timing Role: Low-side switch in 3-level NPC inverter; withstands repetitive 600 A pulsed current (IDM). Use Value: 0.4 °C/W RthJC enables direct bolt-down heatsinking - eliminates thermal interface material degradation over 15-year service life. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | RDS(on) = 1.95 mΩ @ 10 V; TO-263-7 package; no AEC-Q101 documentation publicly available | Targeted for industrial motor drives; lacks automotive qualification evidence in public datasheet | Select only if AEC-Q101 is not required and thermal margin permits 0.15 mΩ higher RDS(on) |
| IRF1407PBF | RDS(on) = 4.8 mΩ @ 10 V; TO-220AB package; RthJC = 1.25 °C/W; AEC-Q101 not claimed | Legacy industrial design; unsuitable for space-constrained automotive modules due to larger footprint and higher thermal resistance | Use only for cost-sensitive non-automotive replacements where 2.7× higher conduction loss is acceptable |
Compared with STL220N4F7AG and IRF1407PBF, SQM200N04-1M8_GE3 offers the lowest RDS(on), highest current rating, and verified AEC-Q101 compliance - making it the sole choice for thermally constrained, safety-critical automotive power stages requiring 175 °C operation.
Availability
SQM200N04-1M8_GE3 is available at Aetrix Electronics and suitable for electric power steering, on-board chargers, and 48 V mild hybrid systems requiring stable component supply, long-term lifecycle support, and traceable automotive-grade sourcing.
Supply support for SQM200N04-1M8_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix designs and manufactures high-performance discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and automotive reliability.
The SQM200N04-1M8_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family - engineered specifically for high-current, high-temperature power conversion in electric vehicle subsystems and ADAS actuators.
FAQ
What is the maximum continuous drain current rating for SQM200N04-1M8_GE3 at 125 °C case temperature?
The SQM200N04-1M8_GE3 supports 192 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-263-7L package and must be applied when ambient or heatsink conditions restrict case temperature rise. Designers should verify actual junction temperature using RthJC = 0.4 °C/W and power loss calculations to ensure operation remains within the -55 °C to +175 °C TJ range.
Does SQM200N04-1M8_GE3 have a qualified AEC-Q101 status, and what tests does that include?
Yes, SQM200N04-1M8_GE3 is AEC-Q101 qualified per Vishay documentation S15-1874-Rev. B. This includes stress testing for high-temperature gate bias (HTGB), high-temperature reverse bias (HTRB), temperature cycling, and unclamped inductive switching (UIS). The qualification confirms suitability for automotive powertrain and chassis applications, though final system-level validation remains the customer's responsibility per Vishay's legal disclaimer.
What is the typical gate charge (Qg) of SQM200N04-1M8_GE3, and how does it impact gate driver selection?
The SQM200N04-1M8_GE3 has a total gate charge (Qg) of 206–310 nC at VGS = 10 V, VDS = 20 V, and ID = 120 A. This value determines the peak current required from the gate driver during switching transitions. For 100 kHz operation, a driver capable of ≥2 A peak sink/source current is recommended to achieve <50 ns rise/fall times while maintaining gate voltage stability across the dual gate pins (G1/G2).
How does the TO-263-7L package of SQM200N04-1M8_GE3 improve thermal and electrical performance versus standard TO-263-3?
The TO-263-7L package of SQM200N04-1M8_GE3 integrates three drain leads, two gate leads, and two source leads - reducing package inductance and spreading thermal load across multiple terminals. Compared to TO-263-3, it achieves 0.4 °C/W junction-to-case thermal resistance (vs. ~0.8–1.0 °C/W for 3-lead variants) and lowers effective gate loop inductance by 40 %, directly improving EMI behavior and switching robustness in high-di/dt automotive inverters.
Can SQM200N04-1M8_GE3 be used in synchronous rectification, and what is its body diode forward voltage?
Yes, SQM200N04-1M8_GE3 is suitable for synchronous rectification due to its optimized source–drain diode. At IF = 80 A and VGS = 0 V, the forward voltage (VSD) is 0.86 V typical and 1.5 V maximum at 25 °C. This low VSD - combined with fast reverse recovery (Qrr and trr not explicitly specified but supported by low Crss = 840–1050 pF) - reduces conduction and switching losses compared to Schottky alternatives in 40 V-class DC–DC converters.
SQM200N04-1M8_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-7, D2PAK (6 Leads + Tab)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 200A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.8mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 310 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 17350 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 375W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263-7
SQM200N04-1M8_GE3 FAQ
1.How can I place an order for SQM200N04-1M8_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQM200N04-1M8_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQM200N04-1M8_GE3 reliable?
The price and inventory of SQM200N04-1M8_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQM200N04-1M8_GE3 is usually 5 days.
3.What payment methods are accepted for SQM200N04-1M8_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQM200N04-1M8_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQM200N04-1M8_GE3?
SQM200N04-1M8_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQM200N04-1M8_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQM200N04-1M8_GE3?
For technical support, including SQM200N04-1M8_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQM200N04-1M8_GE3 requirements.
6.How does Aetrix verify that SQM200N04-1M8_GE3 is sourced from the original manufacturer or authorized distributors?
All SQM200N04-1M8_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQM200N04-1M8_GE3 meets industry standards.
7.What is the process for return or replacement of SQM200N04-1M8_GE3?
All SQM200N04-1M8_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQM200N04-1M8_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQM200N04-1M8_GE3 part is unused and in its original packaging.
Return procedure for SQM200N04-1M8_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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