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Vishay Siliconix SQM25N15-52_GE3
- Part No.:
- SQM25N15-52_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SQM25N15-52_GE3.pdf
- Description:
- MOSFET N-CH 150V 25A TO263
- Quantity:
- Payment:
- Shipping:
Inventory:2,752
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Product details
Overview
SQM25N15-52_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET with 150 V drain-source breakdown voltage, 25 A continuous drain current at TC = 25 °C, and 0.052 Ω RDS(on) at VGS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood motor control, DC-DC converter high-side switching, and battery disconnect applications.
For engineers reviewing the SQM25N15-52_GE3 datasheet, SQM25N15-52_GE3 pinout, SQM25N15-52_GE3 application, or SQM25N15-52_GE3 equivalent, key selection criteria include its 1.4 °C/W junction-to-case thermal resistance, 100 % Rg and UIS testing, TO-263 (D2PAK) package suitability for high-power automotive PCBs, and verified avalanche energy rating of 30 mJ.
Technical Context
This MOSFET uses trench-gate silicon technology optimized for low conduction loss and fast switching in 12 V–48 V automotive systems. Its gate threshold voltage (2.5–4.0 V) enables robust drive compatibility with standard 3.3 V/5 V microcontrollers and dedicated gate drivers.
The device integrates a body diode with 0.85–1.5 V forward voltage at 20 A and supports synchronous rectification in buck converters. Thermal design is enabled by its 1.4 °C/W RthJC and 40 °C/W RthJA (on 1"² FR4 PCB), making it suitable for thermally constrained engine control units and ADAS power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 150 V - Withstands transients up to ISO 7637-2 Pulse 5a (120 V) in 24 V commercial vehicle systems |
| RDS(on) | 0.052 Ω @ VGS = 10 V, ID = 15 A - Enables <1.3 W conduction loss at 5 A continuous load |
| ID (cont.) | 25 A @ TC = 25 °C - Supports peak motor startup currents in 500 W BLDC drivers |
| TJ Range | −55 to +175 °C - Qualified for under-hood placement near turbochargers or exhaust manifolds |
| EAS | 30 mJ @ L = 0.1 mH - Absorbs inductive kickback without external snubber in solenoid drivers |
| Qg | 34–51 nC - Compatible with low-current gate drivers (e.g., UCC27531) while maintaining <30 ns turn-off delay |
| RthJC | 1.4 °C/W - Allows direct heatsink mounting for >65 W power dissipation in compact modules |
Pinout & Package
TO-263 (D2PAK) surface-mount package with exposed drain tab for thermal and electrical connection. Three terminals: Gate (G), Drain (D), Source (S). Tab is electrically connected to Drain.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate control input | Accepts 0–10 V logic-level drive; 1 Ω gate resistance limits dV/dt-induced shoot-through in half-bridge configurations |
| D | Drain (high-side switch node) | Connected to exposed metal tab; must be isolated from PCB ground plane unless used as heatsink return path |
| S | Source (current return path) | Common reference for gate drive and current sensing; ties to low-side shunt or controller ground |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive use per stress test conditions including HTOL, TC, HTRB, and UHAST-no derating required for 15-year vehicle life |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency and unclamped inductive switching robustness-eliminates field failures in relay replacement circuits |
| TrenchFET® architecture | Reduces specific on-resistance by 35 % vs. planar MOSFETs at same die size-enables smaller footprint in space-constrained ECUs |
| Low RthJC (1.4 °C/W) | Enables >80 % of rated power dissipation via heatsink mounting-reduces need for forced air cooling in passive-cooled modules |
| Body diode recovery Qrr = 54 nC | Minimizes reverse recovery losses in synchronous rectifier mode-improves efficiency by ~1.2 % in 48 V buck converters |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | 48 V Mild Hybrid DC-DC Converter |
|---|---|
Use Scenario: High-speed switching of 12 V fuel injectors with 2 ms pulse width and 10 Hz repetition rate in gasoline direct injection systems. IC Role / Device Role / Timing Role: High-side power switch controlling injector coil energization; requires fast turn-on (<17 ns) and robust avalanche capability during coil de-energization. Use Value: 30 mJ EAS rating absorbs full inductive energy without snubber; 0.052 Ω RDS(on) limits self-heating to <0.7 W at 4 A average current. | Use Scenario: Primary-side high-side switch in 3 kW bidirectional buck-boost converter linking 48 V Li-ion battery and 12 V auxiliary bus. IC Role / Device Role / Timing Role: Synchronous rectifier in high-frequency (100–200 kHz) phase-shifted full-bridge topology; demands low Qg and tight RDS(on) tolerance. Use Value: 34–51 nC total gate charge enables efficient drive with 2 A peak gate driver; 0.041 Ω typ. RDS(on) reduces conduction loss by 22 % vs. legacy 100 V MOSFETs. |
| Commercial Vehicle Battery Disconnect Switch | Electric Power Steering (EPS) Motor Phase Leg |
Use Scenario: Solid-state replacement for mechanical contactor in 24 V truck battery management, handling 200 A inrush and 50 A continuous load. IC Role / Device Role / Timing Role: Single-pole high-side isolation switch with controlled soft-start via gate ramping; must survive load dump transients up to 60 V. Use Value: 150 V VDS margin accommodates ISO 16750-2 Load Dump (60 V + overshoot); 175 °C TJ rating ensures reliability at ambient +105 °C under hood. | Use Scenario: Low-side switch in three-phase inverter driving 1.5 kW brushless motor in rack-and-pinion EPS system. IC Role / Device Role / Timing Role: Fast-switching phase leg component operating at 10–20 kHz PWM; requires low Crss to minimize Miller-induced shoot-through. Use Value: 97–125 pF Crss minimizes gate-drain feedback; 21–33 ns rise time supports clean 20 kHz PWM edges without added gate resistors. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N15F7 | 150 V, 220 A (ID pulsed), RDS(on) = 0.0038 Ω @ 10 V - larger die, higher current, lower RDS(on) | Requires larger PCB area and more aggressive thermal management; suited for traction inverters, not ECU space constraints | Select when >100 A pulsed current or <0.01 Ω RDS(on) is mandatory; avoid if board space or cost sensitivity applies |
| IRF1405PBF | 55 V, 169 A, RDS(on) = 0.0055 Ω - lower voltage rating, higher current, legacy planar process | Not AEC-Q101 qualified; unsuitable for automotive temperature or reliability requirements | Consider only for industrial non-automotive 48 V systems where qualification is not required |
Compared with STL220N15F7 and IRF1405PBF, SQM25N15-52_GE3 delivers optimal balance of AEC-Q101 compliance, 25 A continuous rating, TO-263 thermal performance, and cost-effective integration in space-limited automotive modules-making it the preferred choice for ECU, EPS, and 48 V DC-DC designs requiring validated reliability.
Availability
SQM25N15-52_GE3 is available at Aetrix Electronics and suitable for engine control units, 48 V mild hybrid converters, and electric power steering systems requiring stable component supply across multi-year automotive production cycles.
Supply support for SQM25N15-52_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQM series targets high-temperature automotive power switching, with design focus on AEC-Q101 compliance, low RDS(on) stability over temperature, and robust avalanche performance in safety-critical subsystems.
FAQ
What is the maximum continuous drain current rating for SQM25N15-52_GE3 at 125 °C case temperature?
The SQM25N15-52_GE3 has a continuous drain current rating of 16 A at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-263 package and ensures reliable operation within the 175 °C maximum junction temperature limit. Designers must verify heatsink interface resistance and ambient conditions to maintain safe junction temperatures in actual SQM25N15-52_GE3 deployments.
Is SQM25N15-52_GE3 suitable for synchronous rectification in a 48 V buck converter?
Yes, SQM25N15-52_GE3 is suitable for synchronous rectification due to its low RDS(on) (0.052 Ω), fast switching parameters (td(off) = 20–30 ns, tf = 12–20 ns), and body diode forward voltage of 0.85–1.5 V at 20 A. Its 97–125 pF Crss minimizes Miller effect, and 34–51 nC Qg allows efficient gate drive. The SQM25N15-52_GE3's 175 °C rating also supports high-temperature operation typical in sealed 48 V converter enclosures.
Does SQM25N15-52_GE3 have a fully characterized body diode for reverse recovery applications?
Yes, the SQM25N15-52_GE3 datasheet specifies ISM = 65 A pulsed source current and VSD = 0.85–1.5 V at IF = 20 A, VGS = 0 V. While reverse recovery charge (Qrr) is not explicitly tabulated, typical values derived from characterization curves indicate Qrr ≈ 54 nC. This enables predictable performance in freewheeling and synchronous rectifier modes, and the SQM25N15-52_GE3's 100 % UIS testing confirms robustness during unclamped diode conduction events.
What is the gate threshold voltage range for SQM25N15-52_GE3, and how does it affect drive circuit design?
The gate threshold voltage (VGS(th)) for SQM25N15-52_GE3 is specified as 2.5–4.0 V at ID = 250 μA. This range ensures reliable turn-on with standard 3.3 V or 5 V logic-level drivers while providing noise immunity against spurious gate excitation. For robust switching, drive circuits should supply ≥10 V to achieve the rated 0.052 Ω RDS(on); the SQM25N15-52_GE3's low VGS(th) upper limit avoids unintended conduction during low-voltage brown-out conditions.
How is thermal performance quantified for SQM25N15-52_GE3, and what PCB layout guidance applies?
SQM25N15-52_GE3 specifies RthJC = 1.4 °C/W (junction-to-case) and RthJA = 40 °C/W (junction-to-ambient on 1"² FR4 PCB). To achieve these values, the exposed drain tab must be soldered to a minimum 0.635" × 0.420" copper pad (per AN826), with thermal vias to inner ground planes. Layouts using SQM25N15-52_GE3 should avoid narrow traces on source/gate paths to minimize inductance and ensure stable switching behavior.
SQM25N15-52_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 52mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 51 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2360 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 107W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
SQM25N15-52_GE3 FAQ
1.How can I place an order for SQM25N15-52_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQM25N15-52_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQM25N15-52_GE3 reliable?
The price and inventory of SQM25N15-52_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQM25N15-52_GE3 is usually 5 days.
3.What payment methods are accepted for SQM25N15-52_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQM25N15-52_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQM25N15-52_GE3?
SQM25N15-52_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQM25N15-52_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQM25N15-52_GE3?
For technical support, including SQM25N15-52_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQM25N15-52_GE3 requirements.
6.How does Aetrix verify that SQM25N15-52_GE3 is sourced from the original manufacturer or authorized distributors?
All SQM25N15-52_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQM25N15-52_GE3 meets industry standards.
7.What is the process for return or replacement of SQM25N15-52_GE3?
All SQM25N15-52_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQM25N15-52_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQM25N15-52_GE3 part is unused and in its original packaging.
Return procedure for SQM25N15-52_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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